VISHAY
SMF5.0A to SMF51A
Document Number 85811
Rev. 4, 17-Mar-03
Vishay Semiconductors
www.vishay.com
1
17249
Surface Mount ESD Protection Diodes
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Features
• For surface mounted applications
• Low-profile package
• Optimized for LAN protection applications
• Ideal for ESD protection of data lines in
accordance with IEC 1000-4-2 (IEC801-2)
• Ideal for EFT protection of data lines in
accordance with IEC 1000-4-4 (IEC801-4)
• IEC 1000-4-2 (ESD) 15 kV (air) 8 kV (contact)
IEC 1000-4-4 (EFT) 40 A (tp = 5/ 50 ns)
IEC 1000-4-5 (Lightning) 24 A (tp = 8/ 20 µs)
• Low incremental surge resistance, excellent
clamping capability
• 200 W peak pulse power capability with a
10/1000 µs waveform, repetition rate
(duty cycle): 0.01 %
• Very fast response time
• High temperature soldering guaranteed:
260 °C/ 10 seconds at terminals
Mechanical Data
Case: JEDEC DO-219-AB (SMF) Plastic case
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity:The band denotes the cathode, which is
positive with respect to the anode under normal
TVS operation
Mounting Position: Any
Weight: approx. 0.00035 oz, 0.01g
Packaging Codes/Options:
G1/10 K per 13 " reel (8 mm tape), 50 K/box
G2/3 K per 7 " reel (8 mm tape), 30 K/box
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
1) Non-repetitive current pulse and derated above TA = 25 °C
Maximum Thermal Resistance
Ratings at 25 °C, ambient temperature unless otherwise specified
2) Mounted on epoxy substrate with 3 x 3 mm, cu pads (≥ 40 µm thick)
Parameter Te st c o n d i t i o n Symbol Value Unit
Peak pulse power dissipation 10/1000 µs waveform1) PPPM 200 W
8/20 µs waveform1) PPPM 1000 W
Peak pulse current 10/1000 µs waveform1) IPPM next
Table
A
Peak forward surge current 8.3 ms single half sine-wave IFSM 20 A
Parameter Symbol Value Unit
Thermal resistance2) RthJA 180 K/W
Operation junction and storage
temperature range
Tstg, TJ- 55 to + 150 °C