October 1992
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.280 4LSL (S051)
epoxy sealed
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.∞:1 VSWR CAPABILITY
.LOW THERMAL RESISTANCE
.INPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.POUT =35 W MIN. WITH 10.7 dB GAIN
DESCRIPTION
The MSC81035MP is a medium power Class C
transistor designed specifically for pulsed L-Band
avionics applications. This device is a direct re-
placement for the MSC1035MP. MSC81035MP of-
fers improved saturated ouput power and collector
efficiency based on the test circuit described
herein.
Low RFthermal resistance and computerized auto-
matic wire bonding techniques ensure high relia-
bility and product consistency.
The MSC81035MP ishoused inthe IMPACpack-
age with internal input matching.
PIN CONNECTION
BRANDING
81035MP
ORDER CODE
MSC81035MP
ABSOLUTE MAXIMUM RATINGS (Tcase =25°C)
Symbol Parameter Value Unit
PDISS Power Dissipation* (TC≤100°C) 150 W
ICDevice Current* 3.0 A
VCC Collector-Supply Voltage* 55 V
TJJunction Temperature (Pulsed RF Operation) 250 °C
TSTG Storage Temperature −65 to +150 °C
RTH(j-c) Junction-Case Thermal Resistance* 1.0 °C/W
*Appliesonly to ratedRF amplifier operation
Note: Thermal Resistance determined by Infra-Red Scanning of Hot-Spot
Junction Temperature at ratedRF operating conditions.
MSC81035MP
1. Collector 3. Emitter
2. Base 4. Base
THERMAL DATA
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ELECTRICAL SPECIFICATIONS (Tcase =25°C)
Symbol Test Conditions Value Unit
Min. Typ. Max.
POUT f=1025 — 1150 MHz PIN =3.0W VCC =50V 35 40 — W
ηcf=1025 — 1150 MHz PIN =3.0W VCC =50V 10.7 11.2 — %
GPf=1025 — 1150 MHz PIN =3.0W VCC =50V 43 48 — dB
Note: Pulse Width =10µSec
Duty Cycle =1%
STATIC
Symbol Test Conditions Value Unit
Min. Typ. Max.
BVCBO IC=10mA IE=0mA 65 — — V
BVEBO IE=1mA IC=0mA 3.5 — — V
BVCER IC =10mA RBE =10Ω65 — — V
ICES VBE =0V VCE =50V — — 5 mA
hFE VCE =5V IC=500mA 15 — 120 —
DYNAMIC
TYPICAL PERFORMANCE
TYPICAL BROADBAND POWER
AMPLIFIER
MSC81035MP
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TEST CIRCUIT
All dimensions are in inches.
Ref.: Dwg. No. 101 002888
TYPICAL INPUT
IMPEDANCE
TYPICAL COLLECTOR
LOAD IMPEDANCE
PIN =3.0 W
VCC =50 V
Normalized to 50 ohms
ZIN
L
L
ZCL
H
M
M
H
IMPEDANCE DATA
ZIN
ZCL
FREQ. ZIN (Ω)Z
CL (Ω)
L=1025 MHz 2.6 + j 8.3 7.7 + j 2.0
M=1090 MHz 2.8 + j 8.7 7.1 + j 1.0
H=1150 MHz 3.2 + j 4.4 6.5 −j 0.5
MSC81035MP
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PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability forthe
consequences of use of suchinformation nor for any infringementof patents or other rights of third partieswhich may results from its use. No
license is granted by implication or otherwiseunder any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedforuse ascritical componentsinlife supportdevices orsystems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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MSC81035MP
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