S2833-01 - Hamamatsu Corporation

S5493-01, etc.

These are Si photodiodes molded into clear plastic packages.

Spectral response characteristics for these Si photodiodes can be selected to meet your application, from among the visible range, visible to near

IR range, and visible to infrared range. Two active areas of 1.3 × 1.3 mm and 2.4 × 2.8 mm are also available.

S5493-01 and S5627-01 provide a spectral response characteristic similar to the visible range sensitivity without using visual-compensated filters.

Features

S5493-01, S5627-01: Visible range (Filterless type)

S4797-01, S6931 : Visible to near IR range

S2833-01, S4011-02: Visible to infrared range

Applications

Exposure meter

Illuminometer

Camera auto exposure

Stroboscope light control

Copier

Display light control

Optical switch

PHOTODIODE

Si photodiode

Photodiodes molded into clear plastic packages

■ General ratings / Absolute maximum ratings

Absolute maximum ratings

Active area

size

Effective

active area

Reverse

voltage

VR Max.

Operating

temperature

Topr

Storage

temperature

Tstg

Type No.

Dimensional

outline/

Window

material * (mm) (mm2) (V) (°C) (°C)

S5493-01 ➀/R 2.4 × 2.8 6.6

S5627-01 ➁/R 1.3 × 1.3 1.6

S6931 ➂/R 2.4 × 2.8 6.6

S4797-01 ➃/R 1.3 × 1.3 1.6

S2833-01 ➄/R 2.4 × 2.8 6.6

S4011-02 ➅/R 1.3 × 1.3 1.6

10 -25 to +85 -40 to +100

* Window material R: clear resin coating

■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)

Photo sensitivity

(A/W)

Spectral

response

range

Peak

sensitivit

wavelength

λpλpGaP

LED

He-Ne

laser

Infrared

sensitivit

ratio

Short

circuit

current

Isc

100 lx

Temp.

coefficient

Isc

Dark

current

VR=1 V

Max.

Temp.

coefficient

TCID

Rise

time

VR=0 V

RL=1 k

Ω

Terminal

capacitance

VR=0 V

f=10 kHz

Shunt

resistance

Rsh

VR=10 mV

Type No.

(nm) (nm) 560 nm 633 nm (%) (µA) (%/°C) (pA)

(

times/°C

)

(µs) (pF)

Min.

Ω

)

Typ.

Ω

)

S5493-01 1.0 100 10 3000 0.1 1

S5627-01

320 to

840 540 0.3 0.28 0.2 35 0.25 0.25 50 1.13 27000.55

S6931 0.48 0.4 0.45 4.2 0.5 200

S4797-01

320 to

1000 720 0.4 0.37 1.2 20 0.2 50 50

S2833-01 6.5 2.5 700 100

S4011-02

320 to

1100 960 0.58 0.33 0.38

1.9

0.1

1.12

0.5 200

250

Si photodiode

S5493-01, etc.

10 fA

100 fA

1 pA

10 pA

100 pA

1 nA

0.01 0.1 1 10

REVERSE VOLTAGE (V)

DARK CURRENT

(Typ. Ta=25 ˚C)

S4011-02

S4797-01

S6931

S2833-01

S5493-01

S5627-01

0.1

0.2

0.3

0.4

0.7

200 400 600 800 1000

WAVELENGTH (nm)

PHOTO SENSITIVITY (A/W)

(Typ. Ta=25 ˚C)

0.5

0.6

S4797-01

S2833-01

S4011-02

S5493-01

S5627-01

S6931

10 ns

100 ns

1 µs

10 µs

100 µs

1 ms

102103104105

LOAD RESISTANCE (Ω)

RISE TIME

(Typ. Ta=25 ˚C, VR=0 V)

S6931

S4011-02

S2833-01

S4797-01

S5627-01

S5493-01

100 kΩ

1 MΩ

10 MΩ

100 MΩ

1 GΩ

10 TΩ

-20 0 20 40 60

AMBIENT TEMPERATURE (˚C)

SHUNT RESISTANCE

10 GΩ

100 GΩ

1 TΩS2833-01

S4011-02

S4797-01

S6931

S5627-01

S5493-01

(Typ. V

R=10 mV)

■ Rise time vs. load resistance

KSPDB0129EA KSPDB0130EB

KSPDB0131EA KSPDB0132EA

■ Spectral response

■ Dark current vs. reverse voltage ■ Shunt resistance temperature characteristics

Si photodiode

S5493-01, etc.

4.1 ± 0.2

(INCLUDING BURR)

4.0 *

5.2 ± 0.2

0.25

10˚

7.5 ± 5˚

4.5 ± 0.4

5.0 ± 0.2

(INCLUDING BURR)

4.7 *

10˚

4.8 *

2.54

0.5

0.6

5˚

1.8

0.8

0.4

5˚

CATHODE

ANODE

CATHODE

PHOTOSENSITIVE

SURFACE

Chip position accuracy with

respect to the package

dimensions marked *

X, Y ≤ ±0.2

θ ≤ ±2˚

CATHODE

ANODE

CATHODE

4.6 ± 0.2

(INCLUDING BURR)

4.5 * 5.0 ± 0.4

5.0 ± 0.4

(1.0)(1.0)

14.5 ± 0.3

(0.8)

0.7

0.5

5.6 ± 0.2

(INCLUDING BURR)

0.3 MAX.0.3 MAX.

5˚

1.00.25

2.0

3˚

5.4 *

10˚

5.5 *

3˚

2.54

(0.8)

0.6

PHOTOSENSITIVE

SURFACE

Chip position accuracy with

respect to the package

dimensions marked *

X, Y ≤ ±0.2

θ ≤ ±2˚

➂ S6931 ➃ S4797-01

➀ S5493-01 ➁ S5627-01

■ ■

■ Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±0.1 mm)

4.6 ± 0.2

(INCLUDING BURR)

4.5 *

5.6 ± 0.2

(INCLUDING BURR)

5.4 *

10˚

3˚

5.5 *

PHOTOSENSITIVE

SURFACE

0.6

1.0

2.0

CATHODE

SUB

ANODE

SUB (SHORT LEAD)

5˚

5.75 ± 0.2

3˚

Chip position accuracy with

respect to the package

dimensions marked *

X, Y ≤ ±0.2

θ ≤ ±2˚

SUB terminal should be

open-circuited at use.

2.54

0.5

0.7

0.25

7.5 ± 5˚

4.5 ± 0.4

1.0 ± 0.4 ( PIN LEAD)

KSPDA0118EA KSPDA0119EA

KSPDA0121EA

KSPDA0122EA

0.25

7.5 ± 5˚

4.5 ± 0.4

2.54

0.5

0.6

4.1 ± 0.2

(INCLUDING BURR)

4.0 *

5.0 ± 0.2

(INCLUDING BURR)

4.7 *

10˚

5˚

4.8 *

0.4

0.8

1.8

CATHODE

SUB

ANODE

SUB (SHORT LEAD)

10˚

5.2 ± 0.2

5˚

PHOTOSENSITIVE

SURFACE

Chip position accuracy with

respect to the package

dimensions marked *

X, Y ≤ ±0.2

θ ≤ ±2˚

SUB terminal should be

open-circuited at use.

1.6 ± 0.4 ( PIN LEAD)

Si photodiode

S5493-01, etc.

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658

France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

CATHODE

ANODE

CATHODE

4.1 ± 0.2

(INCLUDING BURR)

4.0 * 4.9 ± 0.44.9 ± 0.4

(1.25)

13.8 ± 0.3

(0.8)

0.6

0.5

5.0 ± 0.2

(INCLUDING BURR)

0.3 MAX.

10˚

0.80.25

1.8

5˚

4.7 *

10˚

4.8 *

5˚

2.54

(0.8)

0.5

PHOTOSENSITIVE

SURFACE

Chip position accuracy with

respect to the package

dimensions marked *

X, Y ≤ ±0.2

θ ≤ ±2˚

CATHODE

ANODE

CATHODE

4.6 ± 0.2

(INCLUDING BURR)

4.5 * 5.0 ± 0.4

5.0 ± 0.4

(1.0)(1.0)

14.5 ± 0.3

(0.8)

0.7

0.5

5.6 ± 0.2

(INCLUDING BURR)

0.3 MAX.0.3 MAX.

5˚

1.00.25

2.0

3˚

5.4 *

10˚

5.5 *

3˚

2.54

(0.8)

0.7

PHOTOSENSITIVE

SURFACE

Chip position accuracy with

respect to the package

dimensions marked *

X, Y ≤ ±0.2

θ ≤ ±2˚

➄ S2833-01 ➅ S4011-02

KSPDA0060EAKSPDA0123EA

Cat. No. KSPD1025E01

Apr. 2001 DN