Composite Transistors XN01531 (XN1531) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 -0.05 1.90.1 (0.95) (0.95) Features * Two elements incorporated into one package (Emitter-coupled transistors) * Reduction of the mounting area and assembly cost by one half 2 0.40.2 5 2.8+0.2 -0.3 4 1.50+0.25 -0.05 3 5 For high-frequency/oscillation/mixing 0.16+0.10 -0.06 1 (0.65) 0.30+0.10 -0.05 1.1+0.2 -0.1 Basic Part Number 0 to 0.1 * 2SC3130 x 2 Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open) VCEO 10 V Emitter-base voltage (Collector open) VEBO 3 V Collector current IC 50 mA Total power dissipation PT 200 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C 1: Collector (Tr1) 2: Collector (Tr2) 3: Base (Tr2) EIAJ: SC-74A 4: Emitter 5: Base (Tr1) Mini5-G1 Package Marking Symbol: 9F Internal Connection Electrical Characteristics Ta = 25C 3C 4 Tr1 2 1 Symbol VCEO IC = 2 mA, IB = 0 10 Emitter-base voltage (Collector open) VEBO IE = 10 A, IC = 0 3 Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 Forward current transfer ratio hFE VCE = 4 V, IC = 5 mA 75 200 VCE = 4 V, IC = 5 mA 0.50 0.99 hFE2: VCE = 4 V, IC = 100 A 0.75 /Large) 5 Tr2 Parameter hFE(Small Conditions 3 Collector-emitter voltage (Base open) hFE ratio 1.1+0.3 -0.1 10 Min Typ Max Unit V V 1 A 10 A 400 *1 hFE *2 1.60 hFE1: VCE = 4 V, IC = 5 mA Collector-emitter saturation voltage Transition frequency VCE(sat) fT IC = 20 mA, IB = 4 mA VCB = 4 V, IE = -5 mA, f = 200 MHz 1.4 0.5 V 1.9 2.5 GHz Collector output capacitance (Common base, input open circuited) Cob VCB = 4 V, IE = 0, f = 1 MHz 0.9 1.1 pF Reverse transfer capacitance (Common base) Crb VCB = 4 V, IE = 0, f = 1 MHz 0.25 0.35 pF VCB = 4 V, IE = -5 mA, f = 30 MHz 11.8 13.5 ps Collector-base parameter rbb' * CC Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Ratio between 2 elements *2: hFE = hFE2 / hFE1 Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00032BED 1 XN01531 PT Ta IC VCE 50 120 80 60 IB = 500 A 400 A 40 300 A 200 A 20 100 A 40 0 80 120 160 0 2 Forward current transfer ratio hFE 1 Ta = 75C 25C -25C 1 10 100 Collector current IC (mA) 0 12 0 25C 180 -25C 120 60 0 0.1 1 10 Collector current IC (mA) IE = 0 f = 1 MHz Ta = 25C 1.2 0.8 0.4 100 Collector-base voltage VCB (V) SJJ00032BED 0.8 1.2 1.6 2.0 fT I E Ta = 75C 240 0.4 Base-emitter voltage VBE (V) 4 300 Cob VCB 10 20 (V) VCE = 4 V 1.6 1 10 -25C 30 hFE IC 10 0.01 0.1 8 360 IC / IB = 10 0.1 6 Collector-emitter voltage VCE VCE(sat) IC 100 4 Ta = 75C 40 10 Transition frequency fT (GHz) 40 Ambient temperature Ta (C) Collector output capacitance C (pF) (Common base, input open circuited) ob Collector current IC (mA) Collector current IC (mA) Total power dissipation PT (mW) 160 0 VCE = 4 V 25C 200 0 Collector-emitter saturation voltage VCE(sat) (V) 60 Ta = 25C 0 2 IC VBE 80 240 100 VCB = 4 V Ta = 25C 3 2 1 0 - 0.1 -1 -10 Emitter current IE (mA) -100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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