1
Publication date: February 2004 SJJ00032BED
Composite Transistors
XN01531 (XN1531)
Silicon NPN epitaxial planar type
For high-frequency/oscillation/mixing
■Features
•Two elements incorporated into one package
(Emitter-coupled transistors)
•Reduction of the mounting area and assembly cost by one half
■Basic Part Number
•2SC3130 × 2
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
Internal Connection
Marking Symbol: 9F
1: Collector (Tr1) 4: Emitter
2: Collector (Tr2) 5: Base (Tr1)
3: Base (Tr2)
EIAJ: SC-74A Mini5-G1 Package
2.90
1.9
±0.1
0.16
+0.10
–0.06
2.8
+0.2
–0.3
1.1
+0.3
–0.1
1.1
0 to 0.1
+0.2
–0.1
1.50
(0.65)
0.4
±0.2
+0.25
–0.05
(0.95) (0.95)
0.30
+0.10
–0.05
543
12
+0.20
–0.05
5˚
10˚
2
Tr1Tr2
4
1
5
3
Note) The part number in the parenthesis shows conventional part number.
■Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 010V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 03V
Collector-base cutoff current (Emitter open)
ICBO VCB = 10 V, IE = 01µA
Collector-emitter cutoff current (Base open)
ICEO VCE = 10 V, IB = 010µA
Forward current transfer ratio hFE VCE = 4 V, IC = 5 mA 75 200 400
hFE ratio hFE(Small VCE = 4 V, IC = 5 mA 0.50 0.99
/Large) *1
∆hFE *2hFE2: VCE = 4 V, IC = 100 µA 0.75 1.60
hFE1: VCE = 4 V, IC = 5 mA
Collector-emitter saturation voltage VCE(sat) IC = 20 mA, IB = 4 mA 0.5 V
Transition frequency fTVCB = 4 V, IE = −5 mA, f = 200 MHz 1.4 1.9 2.5 GHz
Collector output capacitance Cob VCB = 4 V, IE = 0, f = 1 MHz 0.9 1.1 pF
(Common base, input open circuited)
Reverse transfer capacitance Crb VCB = 4 V, IE = 0, f = 1 MHz 0.25 0.35 pF
(Common base)
Collector-base parameter rbb' • CCVCB = 4 V, IE = −5 mA, f = 30 MHz 11.8 13.5 ps
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Ratio between 2 elements
*2: ∆hFE = hFE2 / hFE1
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 15 V
Collector-emitter voltage (Base open) VCEO 10 V
Emitter-base voltage (Collector open) VEBO 3V
Collector current IC50 mA
Total power dissipation PT200 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
XN01531
2SJJ00032BED
Ambient temperature Ta (°C)
Total power dissipation PT (mW)
0 16040 12080
0
240
160
80
40
120
200
012108264
0
80
60
20
40
T
a
= 25°C
400 µA
300 µA
200 µA
100 µA
I
B
= 500 µA
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
0 2.01.60.4 1.20.8
0
60
50
40
30
20
10
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
V
CE
= 4 V
T
a
= 75°C−25°C
25°C
0.1 1 10 100
0.01
0.1
1
10
100 I
C
/ I
B
= 10
T
a
= 75°C
25°C
−25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
0.1 1 10 100
0
360
300
240
180
120
60
V
CE
= 4 V
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
− 0.1 −1−10 −100
0
4
3
1
2
VCB = 4 V
Ta = 25°C
Transition frequency fT (GHz)
Emitter current IE (mA)
1 10 100
0
1.6
1.2
0.4
0.8
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector-base voltage VCB (V)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
VCE(sat) IChFE ICfT IE
PT TaIC VCE IC VBE
Cob VCB
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
•Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
•Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
