VRRM = 400 V IFAVM = 10029 A IFRMS = 15753 A IFSM = 60000 A VF0 = 0.754 V rF = 0.025 m Housingless Welding Diode 5SDD 0100Z0400 PRELIMINARY Doc. No. 5SYA1180-00 July 06 * High forward current capability * Low forward and reverse recovery losses * High current application up to 2000 Hz Blocking VRRM Repetitive peak reverse voltage IRRM Repetitive peak reverse current 400 V 50 mA Half sine waveform, f = 50 Hz Tj = -40...180 C VR = VRRM Mechanical 22 2 kN 5 kg 0.10 FM Mounting force m Weight DS Surface creepage distance 2 mm Da Air strike distance 2 mm Fig. 1 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SDD 0100Z0400 On-state IFAVM Max. average on-state current 10029 A Tc = 85 C Half sine pulse IFRMS Max. RMS on-state current 15753 A Tc = 85 C Half sine pulse IFSM Max. peak non-repetitive surge current 64000 A tp = 8.3 ms VR= 0 V 60000 A tp = 10 ms Half sine pulse 17049 kA2s tp = 8.3 ms VR= 0 V 10 ms Half sine pulse I2dt Max. surge current integral VF max Max. on-state voltage 18000 kA2s tp = 0.960 V IF = 8000 A 0.860 V IF = 5000 A VF0 Max. Threshold voltage 0.754 V rF Max. Slope resistance 0.025 m Qrr Typ. Recovered charge 400 C I = 10 000...30 000 A IF = 1 000 A, di/dt = -30 A/s, VR = 100 V Unless otherwise specified Tj = 180 C Thermal characteristics Tj Operating junction temperature range -40...180 C Tstg Storage temperature range -40...180 C Rth(j-c) Thermal resistance junction to case 7.4 K/kW Anode side cooled 23.5 K/kW Cathode side cooled 5.6 K/kW Double side cooled Rth(c-h) Thermal resistance case to heatsink 6.7 K/kW Anode side cooled 8.0 K/kW Cathode side cooled 3.6 K/kW Double side cooled ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. page 2 of 6 Doc. No. 5SYA1180-00 July 06 5SDD 0100Z0400 Z th ( j - c )(t) = Transient therm al impedance junction to case Zthjc ( K/kW ) 6 4 R i (1 - e - t / i ) i =1 5 4 3 2 i 1 2 3 4 Ri (K/kW) 3.8860 1.1830 0.3610 0.1700 0.0461 0.0241 0.0045 i (s) Conditions: Fm = 22 2 kN, Double side cooled 0.0006 1 0 0,0001 0,001 0,01 0,1 Square w ave pulse duration t d ( s ) 1 Correction for periodic waveforms 180 sine: 1.3 K/kW 120 sine: 1.6 K/kW 60 sine: 2.7 K/kW 180 rectangular: 1.1 K/kW 120 rectangular: 1.8 K/kW 60 rectangular: 3.0 K/kW Fig. 2 Transient thermal impedance (junction-to-case) vs. time in analytical and graphical forms. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. page 3 of 6 Doc. No. 5SYA1180-00 July 06 5SDD 0100Z0400 Surge current characteristics Tj = 180 C 25 C 150 30 IFSM ( kA ) IF ( A ) 25000 20000 i2dt 100 25 i 2dt (106 A2s) On-state characteristics 20 15000 15 10000 50 10 I FSM 5000 5 0 0 Fig. 3 0,5 1 1,5 2 VF (V) Forward current vs. forward voltage (max. values). 0 1 10 t ( ms ) 0 100 Fig. 4 Surge forward current vs. pulse length, half sine wave, single pulse, VR = 0 V, Tj = Tjmax Surge current characteristics 60 Forward power loss = 60 IFSM ( kA ) PT ( W ) 16000 120 180 50 DC 12000 40 VR = 0 V 30 8000 20 V R 0.5 V RRM 4000 10 0 0 0 1 Fig. 5 2000 4000 6000 8000 10 100 Number n of cycles at 50 Hz Surge forward current vs. number of pulses, half sine wave, Tj = Tjmax 10000 12000 I FAV ( A ) Fig. 6 Forward power loss vs. average forward current, sine waveform, f = 50 Hz, T = 1/f ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. page 4 of 6 Doc. No. 5SYA1180-00 July 06 5SDD 0100Z0400 Forward power loss 270 DC 180 TC ( C ) PT ( W ) = 30 60 90 120 180 16000 160 12000 140 8000 120 DC 100 4000 80 0 = 60 60 0 2000 4000 6000 8000 10000 12000 0 2000 4000 6000 120 8000 I FAV ( A ) Fig. 7 Forward power loss vs. average forward TC ( C ) current, square waveform, f = 50 Hz, T = 1/f 180 10000 12000 I FAV ( A ) Fig. 8 Forward power loss vs. average forward current, sine waveform, f = 50 Hz, T = 1/f 180 160 140 120 DC 100 270 80 = 30 60 0 2000 4000 60 90 120 6000 10000 12000 8000 180 I FAV ( A ) Fig. 9 Max. case temperature vs. aver. forward current, square waveform, f = 50 Hz, T = 1/f ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. page 5 of 6 Doc. No. 5SYA1180-00 July 06 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1180-00 July 06