ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRRM = 400
V
IFAVM = 10029
A
IFRMS = 15753
A
IFSM = 60000
A
VF0 = 0.754
V
rF = 0.025
mΩ
Doc. No. 5SYA1180-00 July 06
• High forward current capability
• Low forward and reverse recovery losses
• High current application up to 2000 Hz
Blocking
VRRM Repetitive peak reverse voltage 400
V Half sine waveform, f = 50 Hz
Tj = -40...180 °C
IRRM Repetitive peak reverse current 50
mA V
R
= VRRM
Mechanical
FM Mounting force
22 ± 2
5
kN
m Weight 0.10
kg
DS Surface creepage distance 2
mm
Da Air strike distance 2
mm
Fig. 1
Outline drawing.
All dimensions are in millimeters and represent
nominal values unless stated otherwise.
Housingless Welding Diode
5SDD 0100Z0400
PRELIMINARY
5SDD 0100Z0400
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
page 2 of 6 Doc. No. 5SYA1180-00 July 06
On-state
IFAVM Max. average on-state current 10029
A Tc
=
85
°C Half sine pulse
IFRMS Max. RMS on-state current 15753
A Tc
=
85
°C Half sine pulse
64000
A tp
=
8.3
ms
IFSM Max. peak non-repetitive surge current 60000
A tp
=
10
ms VR= 0 V
Half sine pulse
17049
kA2s
tp
=
8.3
ms
∫I2dt Max. surge current integral 18000
kA2s
tp
=
10
ms VR= 0 V
Half sine pulse
0.960
V IF
=
8000
A
VF max Max. on-state voltage 0.860
V IF
=
5000
A
VF0 Max. Threshold voltage 0.754
V
rF Max. Slope resistance 0.025
mΩ I = 10 000…30 000 A
Qrr Typ. Recovered charge 400
µC IF = 1 000 A, di/dt = -30 A/µs,
VR = 100 V
Unless otherwise specified Tj = 180 °C
Thermal characteristics
Tj Operating junction temperature range -40...180
°C
Tstg Storage temperature range -40...180
°C
7.4
K/kW
Anode side cooled
23.5
K/kW
Cathode side cooled
Rth(j-c) Thermal resistance
junction to case
5.6
K/kW
Double side cooled
6.7
K/kW
Anode side cooled Rth(c-h) Thermal resistance
case to heatsink
8.0
K/kW
Cathode side cooled
3.6
K/kW
Double side cooled
5SDD 0100Z0400
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
page 3 of 6 Doc. No. 5SYA1180-00 July 06
( )
)e-(1R = (t)Z 4
1i
/t-
c-jth i
∑
=
iτ
i 1 2 3 4
Ri (K/kW)
3.8860 1.1830 0.3610 0.1700
τi (s) 0.0461 0.0241 0.0045 0.0006
Conditions:
Fm = 22 ± 2 kN, Double side cooled
0
1
2
3
4
5
6
0,0001 0,001 0,01 0,1 1
Square wave pulse duration td ( s )
Transient thermal impedance
junction to case Zthjc ( K/kW )
Correction for periodic waveforms
180°
sine: 1.3
K/kW
120°
sine: 1.6
K/kW
60°
sine: 2.7
K/kW
180°
rectangular:
1.1
K/kW
120°
rectangular:
1.8
K/kW
60°
rectangular:
3.0
K/kW
Fig. 2
Transient thermal impedance (junction-to-case) vs. time in analytical and graphical forms.
5SDD 0100Z0400
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
page 4 of 6 Doc. No. 5SYA1180-00 July 06
On-state characteristics Surge current characteristics
0
5000
10000
15000
20000
25000
0 0,5 1 1,5 2
VF ( V )
IF ( A )
25 °C
Tj = 180 °C
0
50
100
150
1 10 100
t ( ms )
IFSM ( kA )
0
5
10
15
20
25
30
i2dt (106 A2s)
I
FSM
∫
i2dt
Fig. 3 Forward current vs. forward voltage (max.
values).
Fig. 4
Surge forward current vs. pulse length,
half sine wave, single pulse,
VR = 0 V, Tj = Tjmax
Surge current characteristics Forward power loss
0
10
20
30
40
50
60
110 100
Number n of cycles at 50 Hz
IFSM ( kA )
VR = 0 V
VR ≤ 0.5 VRRM
0
4000
8000
12000
16000
0 2000 4000 6000 8000 1000012000
IFAV ( A )
PT ( W )
120°
180°
DC
ψ
= 60°
Fig. 5 Surge forward current vs. number
of pulses, half sine wave, Tj = Tjmax Fig. 6
Forward power loss vs. average forward
current, sine waveform, f = 50 Hz, T = 1/f
5SDD 0100Z0400
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
page 5 of 6 Doc. No. 5SYA1180-00 July 06
Forward power loss
0
4000
8000
12000
16000
0 2000 4000 6000 8000 1000012000
IFAV ( A )
PT ( W )
ψ
= 30°
60°
90°
120°
180°
270°
DC
60
80
100
120
140
160
180
02000 4000 6000 8000 10000 12000
IFAV ( A )
TC ( °C )
180°
120°
DC
ψ
= 60°
Fig. 7 Forward power loss vs. average forward
current, square waveform, f = 50 Hz, T =
1/f
Fig. 8
Forward power loss vs. average forward
current, sine waveform, f = 50 Hz, T = 1/f
60
80
100
120
140
160
180
02000 4000 6000 8000 10000 12000
IFAV ( A )
TC ( °C )
180°
DC
270°
120°
90°
60°
ψ
= 30°
Fig. 9 Max. case temperature vs. aver. forward
current, square waveform, f = 50 Hz, T =
1/f
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Doc. No. 5SYA1180-00 July 06
