MBR1630-MBR1660 Vishay Lite-On Power Semiconductor 16A Schottky Barrier Rectifiers Features D Schottky barrier chip D Guard ring die constuction for transient protection D Low power loss, high efficiency D High current capability and low forward voltage drop D High surge capability D For use in low voltage, high frequency inverters, D free wheeling, and polarity protection application Plastic material - UL Recognition flammability classification 94V-0 94 9537 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Repetitive peak reverse voltage g =Working peak reverse voltage DC Bl ki voltage lt =DC Blocking Peak forward surge current Average forward current Junction and storage temperature range TC=125C Type Symbol Value Unit MBR1630 MBR1635 MBR1640 MBR1645 MBR1650 MBR1660 VRRM =VRWM VR =V 30 35 40 45 50 60 150 16 -65...+150 V V V V V V A A C Typ Unit V V V V mA mA mA mA pF K/W K/W K/W K/W IFSM IFAV Tj=Tstg Electrical Characteristics Tj = 25_C Parameter Forward voltage g Reverse current Diode capacitance Thermal resistance junction to case Voltage g rate of change g ( Rated VR ) Rev. A2, 24-Jun-98 Test Conditions IF=16A, TC=25C IF=16A, TC=125C IF=16A, TC=25C IF=16A, TC=125C TC=25C TC=125C TC=25C TC=125C VR=4V, f=1MHz TL=const. Type Symbol Min MBR1630-MBR1645 VF VF MBR1650-MBR1660 VF VF MBR1630-MBR1645 IR IR MBR1650-MBR1660 IR IR CD MBR1630-MBR1645 RthJC MBR1650-MBR1660 RthJC MBR1630-MBR1640 dV/dt MBR1645-MBR1660 dV/dt 450 1.5 3 1000 10000 Max 0.63 0.57 0.75 0.65 0.2 40 1.0 50 1 (4) MBR1630-MBR1660 Vishay Lite-On Power Semiconductor 20 4000 C D - Diode Capacitance ( pF ) IFAV - Average Forward Current ( A ) Characteristics (Tj = 25_C unless otherwise specified) 16 12 8 4 50 100 150 Tamb - Ambient Temperature ( C ) 0.1 100 VR - Reverse Voltage ( V ) 100 I R - Reverse Current ( mA ) IF - Forward Current ( A ) 10 Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 50 MBR1630-MBR1645 10 MBR1650-MBR1660 1.0 Tj = 25C IF Pulse Width = 300 s 2% Duty Cycle 0.2 0.4 0.6 0.8 1.0 Tj = 75C 0.1 0.01 0 1.0 VF - Forward Voltage ( V ) 15352 Tj = 125C 10 Tj = 25C 0.1 15355 Figure 2. Typ. Forward Current vs. Forward Voltage IFSM - Peak Forward Surge Current ( A ) 1.0 15354 Figure 1. Max. Average Forward Current vs. Ambient Temperature 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage (%) Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage 300 250 200 150 100 50 0 1 15353 1000 100 0 0 15351 Tj = 25C f = 1 MHz 10 Number of Cycles at 60 Hz 100 Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98 MBR1630-MBR1660 Vishay Lite-On Power Semiconductor Dimensions in mm 14469 Case: molded plastic Polarity: see diagram Approx. weight: 2.24 grams Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4) MBR1630-MBR1660 Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 4 (4) Rev. A2, 24-Jun-98