HEXFET® Power MOSFET
VDSS = 55V
RDS(on) = 4.9mΩ
ID = 120A
Description
This HEXFET® Power MOSFET utilizes the
latest processing techniques to achieve
extremely low on-resistance per silicon area.
Additional features of this design are a 175°C
junction operating temperature, fast switching
speed and improved repetitive avalanche
rating.These features combine to make this
design an extremely efficient and reliable device
for use in a wide variety of applications.
S
D
G
Features
lAdvanced Process Technology
lUltra Low On-Resistance
l175°C Operating Temperature
lFast Switching
lRepetitive Avalanche Allowed up to Tjmax
lLead-Free
lAutomotive Qualified * S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
D2P a k 7 P i n
AUTOMOTIVE GRADE AUIRF1405ZS-7P
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those
indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended
periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015
Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C Maximum Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
g
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
i
––– 0.65
R
θJA
Junction-to-Ambient (PCB Mount, steady state)
hi
––– 40
A
°C
250
See Fig.12a,12b,15,16
300 (1.6mm from case )
°C/W
230
1.5
± 20
-55 to + 175
Max.
150
100
590
120
Form Quantity
Tube 50 AUIRF1405ZS-7P
Tape and Reel Left 800 AUIRF1405ZS-7TRL
Orderable Part NumberBase Part Number Package Type Standard Pack
AUIRF1405ZS-7P D2Pak- 7 Pin
2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015
AUIRF1405ZS-7P
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C,
L=0.064mH, RG = 25Ω, IAS = 88A, VGS =10V.
Part not recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80%
VDSS.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Rθ is measured at TJ of approximately 90°C.
S
D
G
S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V
ΔΒV
DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.054 ––– V/°C
R
DS(on)
SMD Static Drain-to-Source On-Resistance ––– 3.7 4.9 mΩ
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
gfs Forward Transconductance 108 ––– ––– S
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 μA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leakage ––– ––– -200
Q
g
Total Gate Charge ––– 150 230 nC
Q
gs
Gate-to-Source Charge ––– 37 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 64 –––
t
d(on)
Turn-On Delay Time ––– 16 ––– ns
t
r
Rise Time ––– 140 –––
t
d(off)
Turn-Off Delay Time ––– 170 –––
t
f
Fall Time ––– 130 –––
L
D
Internal Drain Inductance ––– 4.5 ––– nH Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from package
and center of die contact
C
iss
Input Capacitance ––– 5360 ––– pF
C
oss
Output Capacitance ––– 1310 –––
C
rss
Reverse Transfer Capacitance ––– 340 –––
C
oss
Output Capacitance ––– 6080 –––
C
oss
Output Capacitance ––– 920 –––
C
oss
eff. Effective Output Capacitance ––– 1700 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 150
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 590
(Body Diode)
c
V
SD
Diode Forward Voltage
–––
–––
1.3
V
t
rr
Reverse Recovery Time
–––
63
95
ns
Q
rr
Reverse Recovery Charge ––– 160 240 nC
V
DS
= V
GS
, I
D
= 150μA
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 88A
e
T
J
= 25°C, I
F
= 88A, V
DD
= 28V
di/dt = 100A/μs
e
T
J
= 25°C, I
S
= 88A, V
GS
= 0V
e
showing the
integral reverse
p-n junction diode.
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 10V
d
MOSFET symbol
V
GS
= 0V
V
DS
= 25V
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
Conditions
V
GS
= 0V, V
DS
= 0V to 44V
ƒ = 1.0MHz, See Fig. 5
R
G
= 5.0Ω
I
D
= 88A
V
DS
= 10V, I
D
= 88A
V
DD
= 28V
I
D
= 88A
V
GS
= 20V
V
GS
= -20V
V
DS
= 44V
V
GS
= 10V
e
3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015
AUIRF1405ZS-7P
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance
vs. Drain Current
0.1 110 100 1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
≤60μs PULSE WIDTH
Tj = 25°C
4.5V
0246810 12
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (Α)
TJ = 25°C
TJ = 175°C
VDS = 25V
≤60μs PULSE WIDTH
0.1 110 100 1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
4.5V
≤60μs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0 25 50 75 100 125 150 175 200
ID,Drain-to-Source Current (A)
0
25
50
75
100
125
150
175
200
Gfs, Forward Transconductance (S)
TJ = 25°C
TJ = 175°C
VDS = 10V
380μs PULSE
WIDTH
4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015
AUIRF1405ZS-7P
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0 50 100 150 200
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VGS, Gate-to-Source Voltage (V)
VDS= 44V
VDS= 28V
ID= 88A
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance(pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Coss
Crss
Ciss
0.0 0.5 1.0 1.5 2.0 2.5
VSD, Source-to-Drain Voltage (V)
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100μsec
1msec
10msec
DC
5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015
AUIRF1405ZS-7P
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 88A
VGS = 10V
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.1707 0.000235
0.1923 0.000791
0.2885 0.008193
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
25
50
75
100
125
150
ID, Drain Current (A)
6 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015
AUIRF1405ZS-7P
QG
QGS QGD
VG
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 14. Threshold Voltage vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
200
400
600
800
1000
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 14A
23A
BOTTOM 88A
-75 -50 -25 025 50 75 100 125 150 175 200
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS(th) Gate threshold Voltage (V)
ID = 150μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015
AUIRF1405ZS-7P
Fig 15. Typical Avalanche Current vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
300
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 88A
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
1000
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015
AUIRF1405ZS-7P
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P. W .
Period
* V
GS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
10 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015
AUIRF1405ZS-7P
D2Pak - 7 Pin Tape and Reel
D2Pak - 7 Pin Part Marking Information
Lot Code
YWWA
XX or XX
Part Number
IR Logo
AUF1405ZS-7P
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
11 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015
AUIRF1405ZS-7P
† Qualification standards can be found at International Rectifier’s web site:
http://www.irf.com/product-info/reliability
†† Highest passing voltage.
Qualification Information†
Moisture Sensitivity Level 7L-D2
PAK MSL1
RoHS Compliant Yes
ESD
Machine Model Class M4(425V)
††
(per AEC-Q101-002)
Human Body Model Class H1C(2000V)
††
(per AEC-Q101-001)
Charged Device Model Class C5(1125V)
††
(per AEC-Q101-005)
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.
12 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015
AUIRF1405ZS-7P
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(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to
its products and services at any time and to discontinue any product or services without notice. Part numbers
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