BLS2731-110 - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 1997 Nov 05 1998 Jan 30

DISCRETE SEMICONDUCTORS

BLS2731-110

Microwave power transistor

1998 Jan 30 2

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS2731-110

FEATURES

•Suitable for short and medium pulse applications

•Internal input and output matching networks for an easy

circuit design

•Emitter ballasting resistors improve ruggedness

•Gold metallization ensures excellent reliability

•Interdigitated emitter-base structure provides high

emitter efficiency

•Multicell geometry improves power sharing and reduces

thermal resistance.

APPLICATIONS

•Common base class-C pulsed power amplifiers for radar

applications in the 2.7 to 3.1 GHz band.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in

a 2-lead rectangular flange package with a ceramic cap

(SOT423A) with the common base connected to the

flange.

PINNING - SOT423A

PIN DESCRIPTION

1 collector

2 emitter

3 base; connected to ﬂange

Fig.1 Simplified outline.

book, halfpage

MBK052

QUICK REFERENCE DATA

RF performance at Th=25°C in a common base class-C test circuit.

MODE OF OPERATION f

(GHz) VCB

(V) PL

(W) Gp

(dB) ηC

(%)

Pulsed class-C 2.7 to 3.1 40 >110 >7 >35

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.

1998 Jan 30 3

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS2731-110

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note

1. Equivalent thermal impedance under pulsed microwave operating conditions.

CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

APPLICATION INFORMATION

RF performance at Th=25°C in a common base test circuit.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −75 V

VCES collector-emitter voltage RBE =0 −75 V

VEBO emitter-base voltage open collector −2V

CM peak collector current tp≤100 µs; δ≤10% −12 A

Ptot total power dissipation tp= 100 µs; δ= 10%; Tmb =25°C−500 W

Tstg storage temperature −65 +200 °C

Tjoperating junction temperature −200 °C

Tsld soldering temperature up to 0.2 mm from ceramic cap; t ≤10 s −235 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Zth j-h thermal impedance from junction to heatsink tp= 100 µs; δ= 10%; note 1 0.24 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V(BR)CBO collector-base breakdown voltage IC= 30 mA; open emitter 75 −V

V(BR)CES collector-emitter breakdown voltage IC= 30 mA; VBE =0 75 −V

CBO collector leakage current VCB =40V; I

E=0 −3mA

CES collector leakage current VCE =40V; V

BE =0 −6mA

EBO emitter leakage current VEB = 1.5 V; IC=0 −0.6 mA

hFE DC current gain VCE =5V; I

C= 3 A 40 100

MODE OF OPERATION f

(GHz) VCE

(V) PL

(W) GP

(dB) ηC

(%)

Class-C; tp= 100 µs; δ= 10% 2.7 to 3.1 40 ≥110 ≥7≥35

2.7 to 2.9 40 typ. 130 typ. 8 typ. 42

2.9 to 3.1 40 typ. 120 typ. 7.5 typ. 40

1998 Jan 30 4

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS2731-110

Fig.2 Power gain and efficiency as functions of

frequency; typical values.

VCE = 40 V; class-C; tp= 100 µs; δ= 10%.

handbook, halfpage

2.7 2.8 2.9

(dB)

3.1

f (GHz)

ηC

(%)

ηC

MBK284

VCE = 40 V; class-C; tp= 100 µs; δ= 10%.

Fig.3 Load power as a function of drive power;

typical values.

handbook, halfpage

10 12 14 20

(W)

PD (W)

140

120

2.9 GHz 2.7 3.1

100

MBK285

Fig.4 Input impedance as function of frequency

(series components); typical values.

VCB = 40 V; class-C; PL= 110 W.

handbook, halfpage

2.6

02.8 3 3.2

MGM538

f (GHz)

(Ω)

Fig.5 Load impedance as function of frequency

(series components); typical values.

VCB = 40 V; class-C; PL= 110 W.

handbook, halfpage

2.6 2.8 3 3.2

−4

−8

MGM539

f (GHz)

(Ω)

1998 Jan 30 5

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS2731-110

Fig.6 Component layout for 2.7 to 3.1 GHz class-C test circuit.

Dimensions in mm.

The components are located on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane.

Earth connections from the component side to the ground plane are made by through metallization.

handbook, full pagewidth

MGM540

input output

30 30

L6 L3 L9 C1

L12

L13 L14

L10

C2 RC

L11

L8 C3

1998 Jan 30 6

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS2731-110

List of components

Notes

1. American Technical Ceramics type 100A or capacitor of same quality.

2. The striplines are on double-clad printed-circuit board with Duroid dielectric (εr= 2.2); thickness = 0.38 mm.

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

C1, C2 multilayer ceramic chip

capacitor; note 1 100 pF

C3 multilayer ceramic chip

capacitor 100 nF

RC multilayer ceramic chip

capacitor in series with SMD

resistor

100 nF + 5 Ω

L1 stripline; note 2 length 4.5 mm

width 10 mm

L2 stripline; note 2 length 2.5 mm

width 16.4 mm

L3 stripline; note 2 length 8.3 mm

width 1 mm

L4 stripline; note 2 length 8 mm

width 1.5 mm

L5 stripline; note 2 length 2 mm

width 8.9 mm

L6 stripline; note 2 length 12.7 mm

width 1.2 mm

L7 stripline; note 2 length 4.5 mm

width 10 mm

L8 stripline; note 2 length 2.5 mm

width 24.4 mm

L9 stripline; note 2 length 4.4 mm

width 1 mm

L10 stripline; note 2 length 5.2 mm

width 1 mm

L11 stripline; note 2 length 9.3 mm

width 1 mm

L12 stripline; note 2 length 2.5 mm

width 6 mm

L13 stripline; note 2 length 7.8 mm

width 1.2 mm

L14 stripline; note 2 length 7.5 mm

width 1.2 mm

1998 Jan 30 7

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS2731-110

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT423A 97-04-01

0 5 10 mm

scale

SOT423A

DIMENSIONS (mm are the original dimensions)

U2E1E

Flanged hermetic ceramic package; 2 mounting holes; 2 leads

UNIT Q

cD E

EFHp q

mm 0.16

0.10

9.53

9.27 10.29

10.03

12.02

11.76 8.82

8.56

12.83

12.57 1.58

1.46 19.18

18.92 3.43

3.17 16.64

16.38 22.99

22.73

9.91

9.65

5.58

5.04 3.42

2.88

1998 Jan 30 8

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS2731-110

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data Sheet Status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1998 Jan 30 9

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS2731-110

NOTES

1998 Jan 30 10

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS2731-110

NOTES

1998 Jan 30 11

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS2731-110

NOTES

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Printed in The Netherlands 125108/00/04/pp12 Date of release: 1998 Jan 30 Document order number: 9397 750 03234