AP9924AGO-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low on-resistance BVDSS 20V Capable of 2.5V gate drive RDS(ON) 22m Halogen Free & RoHS Compliant Product ID 5A S2 Description D G2 S2 G1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. TSSOP-8 D S1 S1 D D G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units 20 V +8 V Continuous Drain Current 3 5 A Continuous Drain Current 3 4 A 20 A 0.83 W 1 IDM Pulsed Drain Current PD@TA=25 Total Power Dissipation TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter 3 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Unit 150 /W 1 200907161 AP9924AGO-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. 20 - - V VGS=4.5V, ID=5A - - 22 m VGS=2.5V, ID=3A - - 30 m 0.25 - 1 V VGS=0V, ID=250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=5V, ID=5A - 18 - S IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS= +8V, VDS=0V - - +100 nA ID=5A - 7.2 11.5 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=16V - 0.6 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3.4 - nC 2 td(on) Turn-on Delay Time VDS=10V - 6.2 - ns tr Rise Time ID=1A - 10 - ns td(off) Turn-off Delay Time RG=3.3,VGS=5V - 15 - ns tf Fall Time RD=10 - 5 - ns Ciss Input Capacitance VGS=0V - 275 440 pF Coss Output Capacitance VDS=20V - 95 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 85 - pF Rg Gate Resistance f=1.0MHz - 2.2 - Min. Typ. IS=0.7A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=2A, VGS=0V, - 18.5 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 9 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 250/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9924AGO-HF 30 30 ID , Drain Current (A) T A = 25 C 20 10 T A =150 o C ID , Drain Current (A) 4.5V 3.5V 2.5V V G = 2.0 V o 0 20 10 0 0 1 2 3 4 0 1 2 3 4 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 30 1.6 ID=3A ID=5A V G =4.5V T A =25 o C 26 1.4 Normalized RDS(ON) RDS(ON) (m) 4.5V 3.5V 2.5V V G = 2.0 V 22 18 1.2 1.0 0.8 14 0.6 10 1 2 3 4 5 -50 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 10 Normalized VGS(th) (V) 8 IS(A) 6 T j =150 o C 4 T j =25 o C 1.2 0.8 2 0 0.4 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9924AGO-HF f=1.0MHz 500 400 6 ID=5A C (pF) VGS , Gate to Source Voltage (V) 8 V DS =16V 4 300 C iss 200 2 C oss C rss 100 0 0 0 2 4 6 8 10 1 12 5 9 13 17 21 25 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 Operation in this area limited by RDS(ON) ID (A) 10 Normalized Thermal Response (Rthja) Duty factor=0.5 100us 1ms 1 10ms 100ms 0.1 1s T A =25 o C Single Pulse DC 0.01 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=250 oC/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4