LOW NOISE AMPLIFIERS - CHIP
1
HMC564
v02.0618
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 7 - 13.5 GHz
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
General Description
Features
Functional Diagram
The HMC564 is a high dynamic range GaAs PHEMT
MMIC Low Noise Amplier (LNA) chip which operates
from 7 to 13.5 GHz. The HMC564 features extremely
at performance characteristics including 17 dB of
small signal gain, 1.8 dB of noise gure and output
IP3 of 24 dBm across the operating band. This self-
biased LNA is ideal for hybrid and MCM assemblies
due to its compact size, consistent output power,
single +3V supply operation, and DC blocked RF I/O’s.
All data is measured with the chip in a 50 Ohm test
xture connected via two 0.025 mm (1 mil) diameter
bondwires of minimal length 0.31 mm (12 mil).
Noise Figure: 1.8 dB
Gain: 17 dB
OIP3: 24 dBm
Single Supply: +3V @ 51 mA
50 Ohm Matched Input/Output
Small Size: 1.96 x 0.98 x 0.10 mm
Electrical Specications, TA = +25° C, Vdd 1, 2 = +3V
Typical Applications
The HMC564 is ideal for use as a LNA or driver ampli-
er for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Test Equipment and Sensors
• Military & Space
Parameter Min. Typ. Max. Units
Frequency Range 7 - 13.5 GHz
Gain 14 17 dB
Gain Variation Over Temperature 0.02 0.03 dB/ °C
Noise Figure 1.8 2.2 dB
Input Return Loss 15 dB
Output Return Loss 16 dB
Output Power for 1 dB Compression (P1dB) 9 12 dBm
Saturated Output Power (Psat) 14.5 dBm
Output Third Order Intercept (IP3) 24 dBm
Supply Current (Idd)(Vdd = +3V) 51 mA
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
2
HMC564
v02.0618
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 7 - 13.5 GHz
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
Noise Figure vs. Temperature
-25
-20
-15
-10
-5
0
5
10
15
20
25
6 7 8 9 10 11 12 13 14
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
6 7 8 9 10 11 12 13 14
+25C
+85C
-55C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
6 7 8 9 10 11 12 13 14
+25C
+85C
-55C
NOISE FIGURE (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
6 7 8 9 10 11 12 13 14
+25C
+85C
-55C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
5
10
15
20
25
6 7 8 9 10 11 12 13 14
+25C
+85C
-55C
GAIN (dB)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
-50
-40
-30
-20
-10
0
6 7 8 9 10 11 12 13 14
+25C
+85C
-55C
ISOLATION (dB)
FREQUENCY (GHz)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
3
HMC564
v02.0618
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 7 - 13.5 GHz
P1dB vs. Temperature
Power Compression @ 8 GHz
Psat vs. Temperature
Gain, Noise Figure & Power vs.
Supply Voltage @ 8 GHz
0
4
8
12
16
20
6 7 8 9 10 11 12 13 14
+25C
+85C
-55C
P1dB (dBm)
FREQUENCY (GHz)
0
5
10
15
20
-15 -10 -5 0
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE(%)
INPUT POWER (dBm)
0
4
8
12
16
20
0
2
4
6
8
10
2.5 3 3.5
GAIN (dB), P1dB (dBm)
NOISE FIGURE (dB)
Vdd (Vdc)
Gain
P1dB
Noise Figure
0
4
8
12
16
20
6 7 8 9 10 11 12 13 14
+25C
+85C
-55C
Psat (dBm)
FREQUENCY (GHz)
Output IP3 vs. Temperature
5
10
15
20
25
30
35
6 7 8 9 10 11 12 13 14
+25C
+85C
-55C
OIP3 (dBm)
FREQUENCY (GHz)
-180
-170
-160
-150
-140
-130
-120
-110
-100
-90
-80
100 1K 10K 100K 1M 10M
PHASE NOISE (dBc/Hz)
OFFSET FREQUENCY (Hz)
Additive Phase Noise Vs Offset Frequency,
RF Frequency = 11 GHz,
RF Input Power = 2.5 dBm (Psat)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
4
HMC564
v02.0618
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 7 - 13.5 GHz
-180
-170
-160
-150
-140
-130
-120
-110
-100
-90
-80
100 1K 10K 100K 1M 10M
PHASE NOISE (dBc/Hz)
OFFSET FREQUENCY (Hz)
Notes:
Additive Phase Noise Vs Offset Frequency,
RF Frequency = 11 GHz,
RF Input Power = -4 dBm (P1dB)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
5
HMC564
v02.0618
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 7 - 13.5 GHz
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2) +3.5 Vdc
RF Input Power (RFIN)(Vdd = +3.0 Vdc) +20 dBm
Channel Temperature 175 °C
Continuous Pdiss (T= 85 °C)
(derate 12.97 mW/°C above 85 °C) 1.17 W
Thermal Resistance
(channel to die bottom) 77 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
Vdd (Vdc) Idd (mA)
+2.5 49
+3.0 51
+3.5 53
Typical Supply Current vs. Vdd
Note: Amplier will operate over full voltage ranges shown
above.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information [1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
6
HMC564
v02.0618
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 7 - 13.5 GHz
Pad Descriptions
Pad Number Function Description Interface Schematic
1IN This pad is AC coupled and matched to
50 Ohms from 7 - 13.5 GHz.
2, 3 Vdd1, 2 Power Supply Voltage for the amplier. External bypass
capacitors of 100 pF and 0.1 µF are required.
4OUT This pad is AC coupled and matched to
50 Ohms from 7 - 13.5 GHz.
Die Bottom GND Die Bottom must be connected to RF/DC ground.
Assembly Diagram
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
7
HMC564
v02.0618
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 7 - 13.5 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be
raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface
of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick
die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then
attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to
minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or
with electrically conductive epoxy. The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work
surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip
temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more
than 3 seconds of scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use
the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on
the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab