MOSPOWER Selector Guide (Continued) N-Channel MOSPOWER (continued) . Breakdown Ip Power Device Voltage (Omen Continuous Dissipation Part (Volts) (Ohms (Amps) (Watts) Number 100 0.055 40.0 150 IRF150 100 0.08 33.0 150 IRF152 100 0.085 27.0 125 IRF140 100 0.11 24.0 125 IRF 142 100 0.18 14.0 100 VN1000A 100 0.18 14.0 75 IRF130 100 0.25 12.0 100 VN1001A 100 0.25 12.0 75 IRF 132 100 0.3 8.0 40 (RF 120 100 0.4 7.0 40 IRF122 90 4.0 1.9 25 2N6658 90 45 1.8 25 VNSSAA e; 90 5.0 1.7 25 VNSOAA 80 0.18 14.0 100 VNQ8B00A Ee 80 0.25 12.0 100 VNO0801A 60 0.055 40.0 150 IRF 151 TO-3 60 0.08 33.0 150 IRF153 60 0.085 27.0 125 IRF141 60 0.11 24.0 125 IRF143 60 0.12 18.0 100 VNOGO0A 60 0.15 16.0 100 VNOGOTA 60 0.18 14.0 75 IRF131 60 0.25 12.0 75 IRF133 60 0.3 8.0 40 IRF121 60 0.4 10.0 80 VN64GA 60 0.4 7.0 40 IRF123 60 3.0 2.0 25 2N6657 60 3.5 2.0 25 VNG6G7AA 40 0.12 18.0 100 VNO400A 40 0.15 16.0 100 VNO401A 35 1.8 2.0 25 2N6656 35 25 2.0 25 VN35AA 500 0.85 8.0 125 (RF840 500 1.10 7.9 125 IRF842 500 1.5 45 75 VN5001D 500 1.5 45 75 IRF830 500 2.0 4.0 75 VN5002D 500 2.0 4.0 75 IRF832 500 3.0 25 40 IRF820 500 4.0 2.0 40 IRF822 450 0.85 8.0 125 IRF841 450 1.10 7.0 125 IRF843 450 1.5 45 75 VN4501D 450 1.5 45 75 IRF831 450 2.0 4.0 75 VN4502D 450 2.0 4.0 75 IRF833 450 3.0 2.5 40 IRF821 450 4.0 2.0 40 IRF823 400 0.55 10.0 125 IRF740 TO-220AB 400 0.80 8.0 125 IRF742 400 1.0 6.0 75 VN4000D 400 1.0 55 75 t{RF730 400 1.5 5.0 75 VN4001D 400 1.5 45 75 IRF732 400 1.8 3.0 40 IRF720 400 2.5 2.5 40 IRF722 350 0.55 10.0 425 IRF741 350 0.80 8.0 125 IRF743 350 1.0 6.0 75 VN3500D 350 1.0 55 75 IRF731 350 1.5 5.0 75 VN3501D 350 1.5 45 75 IRF733 350 1.8 3.0 40 IRF721 350 25 25 40 IRF723 240 6.0 1.4 20 VN2406D Siliconix 1-5 SPINS 10P9/SG YIMOdSOWIRF430 IRF434 IRF432 IRF433 IRF830 = IRF834 IRF832 IRF833 S00V solenoid and relay drivers. FEATURES w High Voltage a No Second Breakdown a High Input Impedance a Internal Drain-Source Diode a Very Rugged: Excellent SOA a Extremely Fast Switching BENEFITS mu Reduced Component Count a Improved Performance a Simpler Designs mu Improved Reliability IRF430 = IRF434 = IRF432 = IRF433 IRF830 = IRF834 = IRF832 = IRF833 N-Channel Enhancement Mode MOSPOWER These power FETs are designed especially for offline switching regulators, converters, Product Summary BY Siliconix Neateer BVoss psn) Package IRF 430 500V IRF 431 450V 150 4.58 To. IRF432 500V 2.00 4A 3 IRF433 450V IRF830 500V 150 ABA IRF831 450V 70-2048 IRF832 500V 2.00 4A \RF833 450V 2A ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) Drain-Source Voltage Pulsed Drain Current?....... 060.0 c cece eee ene +18A IRF430, 432, 830, 832.0... cece eee ee eee eee 500V Gate-Source Voltage .......... 0. cece eee cence eee +40V Dra ante Voltage BBB. ee eeeert eee ee eens re ec er tees 450 Maximum Power Dissipation ...........-...-00: eee ee 75W " i ing Factor 2.0.0.0... cece eee eee . C IRF430, 432, 830, 832.0000... cece cc ee eee eee ev eters 500V Linear Derating Factor . .. 0.6 Wi IRF431, 433, 831,833.00... 0 eee ec eee cece eee eee 450V Operating and Storage Temperature .......... ~ 5 to 150C Continuous Drain Current, To = 25C! Notes: IRF 430, 431, 830, 834... .. 00 e eee eee eee + 4.5A 1. Limited by package dissipation. IRF432, 433, 832,833... 0.0. c ee cece ee eee eee 4A 2. Pulse test80us to 300us, 1% duty cycie. PACKAGE DIMENSIONS 0.875 0.450 (11.43) [aw (22.225) sm 0260 7635) ox sy, 2 0.135 sax MAX {088 (7.39) rae ae gay 13.429} | (6.85) | ~ eS 0.043 (1.092) # 9.312 scan aoa jooe | aN? PLANE 1.197 (30404) - Ff L200 112.70) _ 0.675 (17.145) WATT (29.896) DIA SN v= 280 0685 (76.637) ~ (6.35) os, 6.188 ax t TENN ee ry = Pe ag oso (77.1760) Y Sy {2 { _ amo | 986 es |" 0.420 10.668) ew \ 7 +4 420 (10.66) } IY O.16T 14.089) j ats aN 0525 9.181 (3,835) amo a0] L 045 (1.15) . . 42) 0.205 (5.207) Bottom view (13.335) R MAX 135 (3.42) sso 1429 T0-3 [* "656 (76.57) PIN 1 Gate PIN 1 Gate PIN 2 Source TO-204AA (TO-3) PIN 2 & TAB Drain TO-220AB CASE Drain PIN 3 Source 2-28 SiliconixELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) Parameter Part Min Max Unit Test Conditions Number Static IRF430, 2 BV Drain-S Breakd warego, 2 | MP I Veg = 0, Ip = 250 rain-Source Breakdown ' =0,lh= oss IRF431,3 | 450 v a8 =0, In = 2504A IRF831, 3 Vesithy Gate Threshold Voltage All 2 4 Vos = Ves: Ip = 1 MA less Gate-Body Leakage All +100 nA Veg = + 20V, Vpg=0 0.25 Vos = Rated Vos, Veg = 0 loss Zero Gate Voltage Drain Current All mA BS DS Cs 1.0 Vos = Rated Vps, Vag = 0, To = 125C IRF430, 1 45 IRF830, 1 lofon) On-State Drain Current A Vos = 25V, Veg = 10V (Note 1) IRF 431, 3 40 IRF831, 3 . IRF430, 1 15 Static Drain-Source On-State IRF830, 1 : _ Tosi) Resistance TRF432, 3 0 2 Vag = 10V, Ip =2.5A (Note 1) IRF832, 3 . Dynamic Ots Forward Transconductance Alt 2.5 $s Vpg = 100V, Ip = 2.5A (Note 1) Ciss Input Capacitance 800 Coss Output Capacitance All 200 pF Ves = 0, Vog = 25V, f= 1 MHz Cres Reverse Transfer Capacitance 60 tafon) Turn-On Delay Time All 30 tr Rise Time All 30 ns Vpp = 200V, Ip=2.5A, R, = 802, Ry = 102 tavott) Turn-Off Delay Time All 55 (Fig. 1) ty Fail Time All 30 Drain-Source Diode Characteristics Typ Vsp Forward On Voitage All -1.2 Vv ls = -4.5A Vag = 0 (Note 1) ter Reverse Recovery Time All 400 ns Ip = In =4.5A, Veg = O(Fig. 2) Note: Refer to VNDAS5O Design Curves (See Section 4) 1. Pulse test: 80 5-300 us, 1% duty cycle. FIGURE 1 Switching Test Circuit FIGURE 2 JEDEC Reverse Recovery Circuit A 50 2 di/dt Adjust (1 - 27 wH) 4* TO 50uF _ pKyAdjust IN4933 z 7 #1 2402 +2 IN4001 4000UF Sem 2 >t < R < 0.252 L$ 0.014H i CIRCUIT UNDER PW. = Tus tq i DUTY CYCLE = 1% 1N4723 | r 2N4204 SCOPE FROM TRIGGER CKT ") Siliconix 2-29 eceddl = Zesddl = Lessa = OSs ecridl = Cevsdl = Levsal = OPsalTYPICAL STATIC CHARACTERISTICS (Pulse width 80us 300s, Duty cycle %, To =25C) Ohmic Region Ip DRAIN CURRENT (AMPS) 0 0 10 20 30 40 50 Vps DRAIN-SOURCE VOLTAGE (VOLTS) Temperature Effects on rpsion) yn oN a oo Sad = Bw K,-- NORMALIZED ON RESISTANCE o _ a a 2 a -60 -20 20 60 100 140 180 Ty JUNCTION TEMPERATURE (C) Transfer Characteristics Ps // < E a6 ce ec > oO z4 < 4 25C WA 2 2 Wf Te = 125C 0 | 1 3 4 5 6 7 8 Ves GATE SOURCE VOLTAGE (VOLTS) Leakage Currents 108 104 w4 < Vps =300V L-7 = t & 403 L a | Y loss /| 5 10? f- 0 Vos = 10V J 2 49 A less J % = La Y q Py 4 a 1 = Vas = 20V 34 oo EL LL LY -60 -20 20 60 100 140 18 rpsjon) DRAIN-SOURCE RESISTANCE Ip DRAIN CURRENT (mA) 3.0 2.6 2.2 1.8, 1.4 1.0 To CASE TEMPERATURE (C) ON Resistance Characteristics 0 2 40 Ves 6 8 10 ~VGs(TH) 0 GATE ENHANCEMENT VOLTAGE (VOLTS) 100 Threshold Region = 4 10 4 Fy . 4 | oY /, 4 a v S/xo / / 4 4 3 1 E/ e my = = fin qq -_ f \fe a a oye q 0.1 2.5 3.0 3.5 4.0 4.5 5.0 Vas GATE-SOURCE VOLTAGE (VOLTS) VNDASO Part Numbers: VN4501A, VN4501D, VN4502A, VN4502D, VNS0O1A, VN5001D, VN5002A, VN5002D, IRF430, IRF 431, IRF 432, IRF 433, IRF830, IRF831, IRF832, IRF833 01/83 4-8 SiliconixPart Numbers: VN4501A, VN4501D, VN4502A, VN4502D, VN5001A, VN5001D, VN5002A, VN5002D, IRF430, IRF431, IRF 432, IRF433, IRF830, IRF831, IRF832, IRF833. SAFE OPERATING AREA Active Region Switching 10 10 _ _ DEPENDS i 5 < & 5 rf = = < Ee < 2 z 2 5 ey 3 1 ms 3 300 2S z Z 05 4 =z 05 r 10 ms Z 0. = 25C z To = 25C 10 3 c 100 ms a pe | | 02 2 02 2 VN4501A/4502A VN4501D, 4502D VN5001A/5002A 01 "40 20 ~0 100 200 500 1000 "10 20 50 100 200 600 1000 Vos DRAIN SOURCE VOLTAGE (VOLTS) Vps ~~ DRAIN SOURCE VOLTAGE (VOLTS) Power Derating Safe Operating Area, Switching 150 1.50 12 = = 125 1.25 g z s = 9 re oS 100 10 2 5 8 = Po| eG oa A SUFFIX Gg a wo Kp | 2 5 75 a i 0.75 = > N yy Resco = 1.5 CIW E 3 gs] lg ui << 2z =| 18 = NS 050 A << Lelie 4 5 50 ~ . a 4 [SWITCHING LOAD LINESTS Ss a Kp i 4 MUST LIE WITHIN THIS | =| [3 | D SUFFIX | OL RK eg | AREA. VALIDFORt, | | | a 25 D. \ 0.25 2 AND t; UNDER ONE a Rac = 1.67CIW MICROSECOND >--__1 0 pL _L |_| 0 25 50 75 100 125 150 175 0 200 400 600 Te CASE TEMPERATURE (C) Vps ~ DRAIN SOURCE VOLTAGE (VOLTS) s The safe operating area data of Power Derat- w ing and Safe Operating Area, Switching in- Ss dicates maximum operating current as a func- 2 Thermal Response tion of voltage and time at T, = 25C. At elevated = 4.06 ooo ttle temperatures, power must be derated using the 2 E 4 derating factor, Kp from Thermal Response. = E 4 Current limitations imposed by rpgion) are not 3 E . Z| 7 shown except at 25C. When operating in the 2 r D SUFFIX 42 To ohmic region, the maximum current is found E E 4 from: 9 a ot = %E A SUFFIX 4 1 Po * z Eo 4 D\ K, Fos(on) @ 25C & 7 where Pp is the power dissipation at operating = 4 case temperature and pgion) is the on resistance 5 for the part. K, is the multiplying factor for on-re- 0.0 Li iitgi tb ititi Loi de Lt Lu igtii sp pi sistance at the maximum rated junction tempera- 3 0.01 0.1 1.0 10 100 1000 ture taken from Transfer Characteristics. = TIME (mS) Since or-resistance varies somewhat with cur- e rent, some iteration of Ip and Tps(on) Must be done using Threshold Region as a guide. Siliconix 4-9 OSVGNA