(INTERSIL 2N4117-19, 2N4117A-19A N-Channel JFET FEATURES PIN Low Leakage Iqgg <1 pA CONFIGURATION Low Capacitance C... << 1.5 pF p rss p 10-72 ABSOLUTE MAXIMUM RATINGS @ 25C (unless otherwise noted) Maximum Temperatures Storage Temperature -65C to +200C Operating Junction Temperature +200C Lead Temperature (Soldering, a c 8 10 sec time limit) 300C . wo CHIP Maximum Power Dissipation Device Dissipation @ Free Air Temperature 300 mW oo Y Ot: Linear Derating 1.7 mw/Pc | . tet, Fe Maximum Voltages & Current ASE tos * bos Vv Gate to Source Voltage -40V GS Vgp Gate to Drain Voltage -40 V a r e 0120 . 0180 Ig Gate Current 50 mA inves e nore source TS isoate roti | a7 0028 hy NOMS eu ORDERING INFORMATION TO-72 WAFER CHIP 2N4117 2N4117/W | 2N4117/D 2N4117A | 2N4117A/W |2N4117A/D 2N4118 2N4118/W 2N4118/D 2N4118A | 2N4118A/W | 2N4118A/D, 2N4119 2N4119/W 2N4119/D 2N4119A | 2N4119A/W | 2N4119A/D ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) 2N4117 2N4118 2N4119 PARAMETER 2N4117A 2N4118A 2N4119A UNIT TEST CONDITIONS MIN MAX MIN MAX MIN MAX BVGss Gate-Source Breakdown Voltage ~-40 -40 -40 Vv Ig =-1 4A, Vps=0 loss Gate Reverse Current -10 -10 ~10 pA VGgs= -20 V, Vps=0 IGsgg (+100C) Gate Reverse Current 728 728 ~25 nA VG6s= -20 V. Vpg = 0 Ve6s (off) Gate-Source Pinch-Off Voltage -0.6 -1.8 ~1 -3 -2 -6 Vv Vps=10V,Ip=1nA Drain Current at Zero Gate Vps=10V Ipss Voltage (Note 1} 0.02 0.09 0.08 0.24 0.20 0.60 mA vag=0 Common-Source Forward Vos = 10V Sts Transconductance (Note 1} 70 210 80 260 100 330 umho f= 1kHz Common-Source Forward 9 = = OF, Transconductance 60 70 90 xmho VGs = 0, f = 30 MHz Common-Source Output . Vos = 10 V, Vgs =9, Sos Conductance 3 5 10 umho f= 1kHz . Common Source Input , Vos= 10 V, Ves =9, Ciss Capacitance 34 3 3 pF f=1kHz Common-Source Reverse Vos = 10 V, Ves = 0, Crss Transfer Capacitance 15 15 15 pF f=1kHz NOTE: 1. Pulse test: Pulse duration of 2 ms used during test. 4-65