DIL CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking PACKAGE OUTLINE DETAILS CMBT4401 = 2X ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 14 0.38 TI 0.09 ils 0.70 0.50 Pin configuration 2.6 $f | a 1.4 1 = BASE 2.4 | BE 1.2 2 = EMITTER RO.4 | 3 = COLLECTOR (004) ' 2 RO.05 T | (.002) 7 | 1.02 0.12 1- 0.89 0.02 0.60 2.00 ie 0.40 1.80 , 2 ABSOLUTE MAXIMUM RATINGS Collector-emitter voltage VCEO max. 40 V Collector current (DC) Ic max. 600 mA DC current gain 100 min Ic = 150 mA; VcgE=1V hep max. 300 Total power dissipation up to Tamb = 25 C Ptot max 250 mW RATINGS (at Ta = 25C unless otherwise specified) Limiting values Collectoremitter voltage VCEO max. 40 V Collector-base voltage VCBO max. 60 V Emitter-base voltage VEBO max. 6 V Collector current (DC) Ic max. 600 mA Total power dissipation up to Tampb = 25C Prot max 250 mW Storage temperature range Tstg -55 to +150 C Junction temperature Tj max. 150 C 121 CDIL CMBT4401 THER} RESISTANCE From: :* ..on to ambient Rth j-a = 500 K/W CHARACTERISTICS Tamb = 25 C unless otherwise specified Collector-emitter breakdown voltage Ic = 1.0 mA; Ip = 0 V(BR)CEO > 40 V Collector-base breakdown voltage Ic = 100 pA; Ip = 0 V(BR)CBO > 60 V Emitter~base breakdown voltage Ig = 100 pA; Ic = 0 V(BR)EBO > 6 V Base cut-off current VcE = 35 V; Veg = 0.4 V IBEX < 0.1 pA Collector cut-off current VcE = 35 V; Vep=04V ICEX < 0.1 pA D.C. current gain Ic = 0.1 mA; VcRE=1V hfe > 20 Ic = 1.0 mA; Vcg =1V hFE > 40 Ic = 10 mA; VcE =1V hpEe > 80 Ic = 150 mA; Vcg=1V FE 100 to 300 Ic = 500 mA; VcR=2V hfe > 40 Saturation voltage Ic = 150 mA; Ip = 15 mA VcEsat < 0.4 V VBEsat 0.75 to 0.95 V Ic = 500 mA; Ip = 50 mA VCEsat < 0.75 V VBEsat < oe 12 V Transison frequency f = 100 MHz; Ic = 20 mA; Vcg = 10 V fr > 250 MHz Collector-base capacitance Tg = 0; Vcp = 5 V; f = 100 kHz Cob < 8 pF Emitter-base capacitance Ic = 0; Vpe = 0.5 V; f = 100 kHz Ceb < 30 pF Input impedance; f = 1 kHz; . 1 ka min. Ic = 1 mA; Vcg = 10 V hie max. 8 kO Voltage feed-back ratio . 4 Ic = 1 mA; Veg = 10 V; f = 1 kHz hye min. 0.1% 10 . , max. 30 x 104 Small-signal curent gain; f = 1 kHz; Ic = 1 mA; Vcg = 10 V hfe min. 40 max. 500 122 DIL CMBT4401 Output admittance; f = 1 kHz; . Ic =1mA; Veg = 10 V Hoe mun Tous max. 30 pS Switching times (resistive load) Turnon time Ic = 150 mA; Ipi = 15 mA; Vcc = 30 V; Vep = 2 V delay time tg max. 15 ns rise time tr max. 20 ns Turn-off time Ic = 150 mA; Vcc = 30 V; Tp1 = Ip2 = 15 mA storage time ts max. 225 ns fall time tf max. 30 ns 123