IRL620STRR - International Rectifier

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 5.0 V 5.2

ID @ TC = 100°C Continuous Drain Current, VGS @ 5.0 V 3.3 A

IDM Pulsed Drain Current 21

PD @TC = 25°C Power Dissipation 50

PD @TA = 25°C Power Dissipation (PCB Mount)** 3.1

Linear Derating Factor 0.40

Linear Derating Factor (PCB Mount)** 0.025

VGS Gate-to-Source Voltage ±10 V

EAS Single Pulse Avalanche Energy 125 mJ

IAR Avalanche Current 5.2 A

EAR Repetitive Avalanche Energy 5.0 mJ

dv/dt Peak Diode Recovery dv/dt 5.0 V/ns

TJ, TSTG Junction and Storage Temperature Range -55 to + 150

Soldering Temperature, for 10 seconds 300 (1.6mm from case)

IRL620S

HEXFET® Power MOSFET

PD -9.1218

Revision 0

VDSS = 200V

RDS(on) = 0.80Ω

ID = 5.2A

Absolute Maximum Ratings

Thermal Resistance

Parameter Min. Typ. Max. Units

RθJC Junction-to-Case — — 2.5

RθJA Junction-to-Ambient (PCB Mount)** — — 40 °C/W

RθJA Junction-to-Ambient — — 62

Surface Mount

Available in Tape & Reel

Dynamic dv/dt Rating

Repetitive Avalanche Rated

Logic-Level Gate Drive

RDS(on) Specified at VGS=4V & 5V

Fast Switching

Third Generation HEXFETs from International Rectifier provide the designer

with the best combination of fast switching, ruggedized device design, low on-

resistance and cost-effectiveness.

The SMD-220 is a surface-mount power package capable of accommodating die

sizes up to HEX-4. It provides the highest power capability and the lowest possible

on-resistance in any existing surface-mount package. The SMD-220 is suitable for

high current applications because of its low internal connection resistance and can

dissipate up to 2.0W in a typical surface-mount application.

Description

SMD-220

W/°C

°C

** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques, refer

to Application Note AN-994.

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 200 — — V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient —0.27 —V/°C Reference to 25°C, ID = 1mA

RDS(on) Static Drain-to-Source On-Resistance — — 0.80 VGS = 10.0V, ID = 3.1A

— — 1.0 VGS = 4.0V, ID = 2.6A

VGS(th) Gate Threshold Voltage 1.0 —2.0 V VDS = VGS, ID = 250µA

gfs Forward Transconductance 1.2 — — S VDS = 50V, ID = 3.1A

IDSS Drain-to-Source Leakage Current — — 25 VDS = 200V, VGS = 0V

— — 250 VDS = 320V, VGS = 0V, TJ = 125°C

IGSS Gate-to-Source Forward Leakage — — 100 VGS = 10V

Gate-to-Source Reverse Leakage — — -100 VGS = -10V

QgTotal Gate Charge — — 16 ID = 5.2A

Qgs Gate-to-Source Charge — — 2.9 nC VDS = 160V

Qgd Gate-to-Drain ("Miller") Charge — — 9.6 VGS = 5.0V, See Fig. 6 and 13

td(on) Turn-On Delay Time —4.2 —VDD = 100V

trRise Time —31 —ID = 5.2A

td(off) Turn-Off Delay Time —18 —RG = 9.0Ω

tfFall Time —17 —RD = 20Ω, See Fig. 10

LDInternal Drain Inductance —4.5 —Between lead,

6mm (0.25in.)

LSInternal Source Inductance —7.5 —from package

and center of

die contact

Ciss Input Capacitance —360 —VGS = 0V

Coss Output Capacitance —91 —pF VDS = 25V

Crss Reverse Transfer Capacitance —27 —ƒ = 1.0MHz, See Fig. 5

IRL620S

Notes:

Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) showing the

ISM Pulsed Source Current integral reverse

(Body Diode) p-n junction diode.

VSD Diode Forward Voltage — — 1.8 VTJ = 25°C, IS = 5.2A, VGS = 0V

trr Reverse Recovery Time —180 270 ns TJ = 25°C, IF = 5.2A

Qrr Reverse RecoveryCharge —1.1 1.7 µC di/dt = 100A/µs

ton Forward Turn-On Time

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

VDD = 50V, starting TJ = 25°C, L = 6.9mH

RG = 25Ω, IAS = 5.2A. (See Figure 12)

ISD ≤ 5.2A, di/dt ≤ 95A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

Pulse width ≤ 300µs; duty cycle ≤ 2%.

Source-Drain Ratings and Characteristics

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

——21

— — 5.2 A

Ω

µA

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

IRL620S

Fig 1. Typical Output Characteristics,

TC = 25oCFig 2. Typical Output Characteristics,

TC = 150oC

RDS(on), Drain-to-Source On Resistance

(Normalized)

ID, Drain Current (Amps)

IRL620s

Fig 7. Typical Source-Drain Diode

Forward Voltage Fig 8. Maximum Safe Operating Area

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Capacitance (pF)

VGS, Gate-to-Source Voltage (volts)

ISD, Reverse Drain Current (Amps)

ID, Drain Current (Amps)

IRL620S

Fig 10a. Switching Time Test Circuit

Fig 9. Maximum Drain Current Vs.

Case Temperature Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

ID, Drain Current (Amps)

IRL620S

Fig 13a. Basic Gate Charge Waveform

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

Fig 13b. Gate Charge Test Circuit

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

IRL620S

Fig 14. Peak Diode Recovery dv/dt Test Circuit

IRL620S

Package Outline SMD-220

Part Marking Information SMD-220

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY:

Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39)

1145 10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371

Data and specifications subject to change without notice.

IRL620S

Package Outline SMD-220 Tape and Reel