DMN3009SFG Green 30V N-CHANNEL ENHANCEMENT MODE MOSFET (R) PowerDI V(BR)DSS Features and Benefits ID Max TC = +25C RDS(ON) Max 30V 5.5m @ VGS = 10V 45A 9m @ VGS = 4.5V 30A Low On-Resistance Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it Case: PowerDI 3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. (R) Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections Indicator: See Diagram DC-DC Converters Battery Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) PowerDI3333-8 Pin 1 S S S G D D D D Top View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number DMN3009SFG-7 DMN3009SFG-13 Notes: Case PowerDI3333-8 PowerDI3333-8 Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YYWW ADVANCE INFORMATION ADVANCED INFORMATION Product Summary N09= Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 15 = 2015) WW = Week Code (01 to 53) N09 PowerDI is a registered trademark of Diodes Incorporated. DMN3009SFG Document number: DS36747 Rev. 5 - 2 1 of 7 www.diodes.com September 2015 (c) Diodes Incorporated DMN3009SFG Maximum Ratings (@TA = +25C, unless otherwise specified.) ADVANCE INFORMATION ADVANCED INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25C TA = +70C TC +25C A = +70C TC A = +70C TA = +70C Continuous Drain Current, VGS = 10V (Note 6) Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current, L = 0.1mH Avalanche Energy, L = 0.1mH Value 30 20 16 13.6 13 13.6 45 35 80 20 13.6 33 55 13.6 ID ID IDM IS IAS EAS Unit V V A A A A A mJ Thermal Characteristics Characteristic Symbol TA = +25C Total Power Dissipation (Note 5) PD TA = +70C Thermal Resistance, Junction to Ambient (Note 5) TA = +25C 137 32 2.1 PD TA = +70C Steady State W C/W W 1.4 59 C/W RJC 7.8 C/W TJ, TSTG -55 to +150 C RJA Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Unit 0.6 RJA Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Value 0.9 Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 -- -- -- -- -- -- 1 100 V A nA VGS = 0V, ID = 250A VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) RDS(ON) 2.5 5.5 9 1 m VSD -- -- -- -- V Static Drain-Source On-Resistance 1 -- -- -- VDS = VGS, ID = 250A VGS = 10V, ID = 20A VGS = 4.5V, ID = 16A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2,000 315 248 2.2 20 42 4.7 7.4 3.9 4.1 31 14.6 15 6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- pF pF pF nC nC nC nC nS nS nS nS nS nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: V Test Condition VDS = 15V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 15V, ID = 15A VDD = 15V, VGS = 10V, RG = 3.3, ID = 15A IF = 15A, di/dt = 100A/s 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. DMN3009SFG Document number: DS36747 Rev. 5 - 2 2 of 7 www.diodes.com September 2015 (c) Diodes Incorporated DMN3009SFG 30.0 30 VGS=3.0V 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS=5V VGS=4.0V 20.0 VGS=4.5V 15.0 VGS=10.0V 10.0 5.0 VGS=2.0V 15 85 125 10 25 5 -55 0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 3 VGS=4.5V 0.004 0.0035 VGS=10V 0.003 0.0025 0.002 0 5 10 15 20 25 0.007 0.006 150 0.005 125 0.004 85 0.003 25 -55 0.001 0 10 15 20 25 0.008 ID=15A 0.004 0 0 4 Document number: DS36747 Rev. 5 - 2 8 12 16 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 30 ID, DRAIN CURRENT(A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMN3009SFG 3 0.012 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS= 4.5V 5 2.5 0.016 30 0.008 0 2 0.02 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0.002 1.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.005 0.0045 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 20 150 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION ADVANCED INFORMATION 25.0 VGS=2.5V 3 of 7 www.diodes.com 1.8 VGS=10V, ID=30A 1.6 1.4 1.2 VGS=4.5V, ID=15A 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 6. On-Resistance Variation with Temperature September 2015 (c) Diodes Incorporated VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 2 0.008 0.007 0.006 VGS=4.5V, ID=15A 0.005 0.004 0.003 VGS=10V, ID=30A 0.002 0.001 0 -50 -25 0 25 50 75 100 125 1.7 ID=1mA 1.4 1.1 ID=250A 0.8 0.5 0.2 150 -50 TJ, JUNCTION TEMPERATURE () Figure 7. On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 8. Gate Threshold Variation vs. Junction Temperature 100000 30 150 VGS=0V, TA=125 IDSS, LEAKAGE CURRENT (nA) IS, SOURCE CURRENT (A) 25 VGS=0V, TA=150 20 15 VGS=0V, TA=85 10 VGS=0V, TA=25 5 10000 125 1000 85 100 25 10 VGS=0V, TA=-55 1 0 0 0.3 0.6 0.9 1.2 0 1.5 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Drain-Source Leakage Current vs. Voltage VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 10 10000 f=1MHz 8 Ciss VDS=15V, ID=15A VGS (V) CT, JUNCTION CAPACITANCE (pF) ADVANCE INFORMATION ADVANCED INFORMATION DMN3009SFG 1000 6 4 Coss 2 Crss 100 0 0 5 10 15 20 25 30 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Qg (nC) Figure 11. Typical Junction Capacitance Figure 12. Gate Charge DMN3009SFG Document number: DS36747 Rev. 5 - 2 4 of 7 www.diodes.com 35 40 45 September 2015 (c) Diodes Incorporated DMN3009SFG 100 PW =100s ADVANCE INFORMATION ADVANCED INFORMATION ID, DRAIN CURRENT (A) RDS(ON) Limited 10 PW =1ms 1 PW =10ms PW =100ms 0.1 TJ(MAX)=150 PW =1s TA=25 Single Pulse PW =10s DUT on 1*MRP board DC VGS=10V 0.01 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 13. SOA, Safe Operation Area r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.5 D=0.9 D=0.3 0.1 D=0.7 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RJA(t)=r(t) * RJA RJA=137/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 14. Transient Thermal Resistance DMN3009SFG Document number: DS36747 Rev. 5 - 2 5 of 7 www.diodes.com September 2015 (c) Diodes Incorporated DMN3009SFG Package Outline Dimensions ADVANCE INFORMATION ADVANCED INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. PowerDI3333-8 A1 A3 A Seating Plane D L(4x) D2 1 Pin #1 ID b2(4x) E E2 e1 8 z(4x) b L1(3x) e PowerDI3333-8 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.20 D 3.25 3.35 3.30 D2 2.22 2.32 2.27 E 3.25 3.35 3.30 E2 1.56 1.66 1.61 e 0.65 e1 0.79 0.89 0.84 L 0.35 0.45 0.40 L1 0.39 z 0.515 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. PowerDI3333-8 X3 X2 8 Y2 X1 Y1 Y3 Y X DMN3009SFG Document number: DS36747 Rev. 5 - 2 Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 1 C 6 of 7 www.diodes.com September 2015 (c) Diodes Incorporated DMN3009SFG ADVANCE INFORMATION ADVANCED INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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