LSI00342 - Broadcom - Datasheet.Live

DMN3009SFG

Document number: DS36747 Rev. 5 - 2

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30V N-CHANNEL ENHANCEMENT MODE MOSFET

PowerDI®

Product Summary

V(BR)DSS

RDS(ON) Max

ID Max

TC = +25°C

30V

5.5mΩ @ VGS = 10V

45A

9mΩ @ VGS = 4.5V

30A

Description and Applications

This MOSFET is designed to minimize the on-state resistance

(RDS(ON)), yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

 Power Management Functions

 DC-DC Converters

 Battery

Features and Benefits

 Low On-Resistance

 Low Input Capacitance

 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: PowerDI®3333-8

 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections Indicator: See Diagram

 Terminals: Finish  Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.072 grams (Approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

DMN3009SFG-7

PowerDI3333-8

2,000/Tape & Reel

DMN3009SFG-13

PowerDI3333-8

3,000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

SSSG

DDDD

Pin 1

Green

Top View

Bottom View

PowerDI3333-8

N09= Product Type Marking Code

YYWW = Date Code Marking

YY = Last Digit of Year (ex: 15 = 2015)

WW = Week Code (01 to 53)

Equivalent Circuit

N09

YYWW

PowerDI is a registered trademark of Diodes Incorporated.

DMN3009SFG

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Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current, VGS = 10V (Note 6)

TA = +25°C

TA = +70°C

ID

16

13.6

A

TA = +70°C

13

13.6

TC = +25°C

TA = +70°C

ID

45

A

TC = +70°C

TA = +70°C

35

Pulsed Drain Current (380μs Pulse, Duty Cycle = 1%)

IDM

80

A

Maximum Continuous Body Diode Forward Current (Note 6)

IS

20

13.6

A

Avalanche Current, L = 0.1mH

IAS

33

A

Avalanche Energy, L = 0.1mH

EAS

55

13.6

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25°C

PD

0.9

W

TA = +70°C

0.6

Thermal Resistance, Junction to Ambient (Note 5)

RθJA

137

32

°C/W

Total Power Dissipation (Note 6)

TA = +25°C

PD

2.1

W

TA = +70°C

1.4

Thermal Resistance, Junction to Ambient (Note 6) Steady State

RθJA

59

°C/W

Thermal Resistance, Junction to Case (Note 6)

RθJC

7.8

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

BVDSS

30

—

V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS

—

1

μA

VDS = 24V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

VGS(TH)

1

—

2.5

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

5.5

mΩ

VGS = 10V, ID = 20A

—

9

VGS = 4.5V, ID = 16A

Diode Forward Voltage

VSD

—

1

V

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

Ciss

—

2,000

—

pF

VDS = 15V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

315

—

pF

Reverse Transfer Capacitance

Crss

—

248

—

pF

Gate Resistance

Rg

—

2.2

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

Qg

—

20

—

nC

VDS = 15V, ID = 15A

Total Gate Charge (VGS = 10V)

Qg

—

42

—

nC

Gate-Source Charge

Qgs

—

4.7

—

nC

Gate-Drain Charge

Qgd

—

7.4

—

nC

Turn-On Delay Time

tD(ON)

—

3.9

—

nS

VDD = 15V, VGS = 10V,

RG = 3.3Ω, ID = 15A

Turn-On Rise Time

tR

—

4.1

—

nS

Turn-Off Delay Time

tD(OFF)

—

31

—

nS

Turn-Off Fall Time

tF

—

14.6

—

nS

Reverse Recovery Time

tRR

—

15

—

nS

IF = 15A, di/dt = 100A/μs

Reverse Recovery Charge

QRR

—

6

—

nC

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

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0.0

5.0

10.0

15.0

20.0

25.0

30.0

0 0.5 1 1.5 2 2.5 3

ID, DRAIN CURRENT (A)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

VGS=2.0V

VGS=2.5V VGS=3.0V

VGS=4.0V

VGS=4.5V

VGS=10.0V

0

5

10

15

20

25

30

1 1.5 2 2.5 3

ID, DRAIN CURRENT (A)

VGS, GATE-SOURCE VOLTAGE (V)

Figure 2. Typical Transfer Characteristic

VDS=5V

-55℃

25℃

85℃

150℃

125℃

0

0.004

0.008

0.012

0.016

0.02

0 4 8 12 16 20

RDS(ON), DRAIN-SOURCE ON-RESISTANCE

(Ω)

VGS, GATE-SOURCE VOLTAGE (V)

Figure 4. Typical Transfer Characteristic

ID=15A

0.002

0.0025

0.003

0.0035

0.004

0.0045

0.005

0 5 10 15 20 25 30

RDS(ON), DRAIN-SOURCE ON-RESISTANCE

(Ω)

ID, DRAIN-SOURCE CURRENT (A)

Figure 3. Typical On-Resistance vs. Drain Current and

Gate Voltage

VGS=4.5V

VGS=10V

0.6

0.8

1

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150

RDS(ON), DRAIN-SOURCE ON-RESISTANCE

(NORMALIZED)

TJ, JUNCTION TEMPERATURE (℃)

Figure 6. On-Resistance Variation with Temperature

VGS=4.5V, ID=15A

VGS=10V, ID=30A

0

0.001

0.002

0.003

0.004

0.005

0.006

0.007

0.008

0 5 10 15 20 25 30

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

ID, DRAIN CURRENT(A)

Figure 5. Typical On-Resistance vs. Drain Current and

Temperature

VGS= 4.5V

150℃

-55℃

25℃

85℃

125℃

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0

0.001

0.002

0.003

0.004

0.005

0.006

0.007

0.008

-50 -25 0 25 50 75 100 125 150

RDS(ON), DRAIN-SOURCE ON-RESISTANCE

(Ω)

TJ, JUNCTION TEMPERATURE (℃)

Figure 7. On-Resistance Variation with Temperature

VGS=4.5V, ID=15A

VGS=10V, ID=30A

0.2

0.5

0.8

1.1

1.4

1.7

2

-50 -25 0 25 50 75 100 125 150

VGS(TH), GATE THRESHOLD VOLTAGE (V)

TJ, JUNCTION TEMPERATURE (℃)

Figure 8. Gate Threshold Variation vs. Junction

Temperature

ID=250μA

ID=1mA

1

10

100

1000

10000

100000

0 5 10 15 20 25 30

IDSS, LEAKAGE CURRENT (nA)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 10. Typical Drain-Source Leakage Current vs.

Voltage

25℃

85℃

125℃

150℃

0

5

10

15

20

25

30

0 0.3 0.6 0.9 1.2 1.5

IS, SOURCE CURRENT (A)

VSD, SOURCE-DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

VGS=0V, TA=-55℃

VGS=0V, TA=25℃

VGS=0V, TA=85℃

VGS=0V, TA=150℃

VGS=0V, TA=125℃

100

1000

10000

0 5 10 15 20 25 30

CT, JUNCTION CAPACITANCE (pF)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 11. Typical Junction Capacitance

f=1MHz

Ciss

Coss

Crss

0

2

4

6

8

10

0 5 10 15 20 25 30 35 40 45

VGS (V)

Qg (nC)

Figure 12. Gate Charge

VDS=15V, ID=15A

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0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10 100 1000

r(t), TRANSIENT THERMAL RESISTANCE

t1, PULSE DURATION TIME (sec)

Figure 14. Transient Thermal Resistance

RθJA(t)=r(t) * RθJA

RθJA=137℃/W

Duty Cycle, D=t1 / t2

D=Single Pulse

D=0.005

D=0.01

D=0.02

D=0.05

D=0.1

D=0.3

D=0.5

D=0.7

D=0.9

0.01

0.1

1

10

100

0.01 0.1 1 10 100

ID, DRAIN CURRENT (A)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 13. SOA, Safe Operation Area

TJ(MAX)=150℃

TA=25℃

Single Pulse

DUT on 1*MRP board

VGS=10V

RDS(ON) Limited

DC

PW=10s

PW=1s

PW=100ms

PW=10ms

PW=1ms

PW=100μs

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

PowerDI3333-8

Dim

Min

Max

Typ

A

0.75

0.85

0.80

A1

0.00

0.05

0.02

A3



0.203

b

0.27

0.37

0.32

b2



0.20

D

3.25

3.35

3.30

D2

2.22

2.32

2.27

E

3.25

3.35

3.30

E2

1.56

1.66

1.61

e



0.65

e1

0.79

0.89

0.84

L

0.35

0.45

0.40

L1



0.39

z



0.515

All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

PowerDI3333-8

Dimensions

Value (in mm)

C

0.650

X

0.420

X1

0.420

X2

0.230

X3

2.370

Y

0.700

Y1

1.850

Y2

2.250

Y3

3.700

e1

1

8

D

D2

E

e

b

E2

A

A3

Pin #1 ID

Seating Plane

L(4x)

A1

L1(3x)

b2(4x)

z(4x)

X3

Y3

X

Y

C

Y1

Y2

X1

X2

1

8

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for

use provided in the labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably

expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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