37.0-40.0 GHz GaAs Power Amplifier
QFN, 7x7mm
Linear Power Amplifier
On-Chip Power Detector
Output Power Adjust
25.0 dB Small Signal Gain
+27.0 dBm P1dB Compression Point
+38.0 dBm OIP3
Features
Page 1 of 6
Electrical Characteristics for 37 - 40 GHz
(Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1dB Compression (P1dB)
Output IMD3 with Pout (scl) = 14 dBm
Output IP3
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg)
Supply Current (Id1) (Vd=4.0V, Vg=-0.3V)
Units
GHz
dB
dB
dB
dB
dB
dBm
dBc
dBm
VDC
VDC
mA
Min.
37.0
10.0
4.0
21.0
-
-
-
43.0
35.5
-
-1.0
-
Typ.
-
14.0
8.0
25.0
+/-1.0
50
27.0
48.0
+38.0
4.0
-0.3
1000
Max.
40.0
-
-
30.0
-
-
-
-
-
4.0
-0.1
1200
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2011 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
P1080-QU
Mimix Broadband’s four stage 37.0-40.0 GHz
packaged GaAs MMIC power amplifier has a small
signal gain of 25.0 dB with a +38.0 dBm Output
Third Order Intercept. The amplifier contains an
integrated, temperature compensated, on-chip
power detector. This MMIC uses Mimix
Broadband’s GaAs pHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity. The device comes in a RoHS compliant
7x7mm QFN Surface Mount Package offering
excellent RF and thermal properties. This device
has been designed for use in 38 GHz
Point-to-Point Microwave Radio applications.
General Description Absolute Maximum Ratings1,2
(1) Channel temperature directly affects a device's MTTF. Channel temperature should
be kept as low as possible to maximize lifetime.
(2) For saturated performance it recommended that the sum of (2*Vdd + abs(Vgg)) <9V
Supply Voltage (Vd)
Gate Bias Voltage (Vg)
Input Power (Pin)
Abs. Max. Junction/Channel Temp
Max. Operating Junction/Channel Temp
Continuous Power Dissipation (Pdiss) at 85 ºC
Thermal Resistance (Tchannel=150 ºC)
Operating Temperature (Ta)
Storage Temperature (Tstg)
Mounting Temperature
ESD Min. - Machine Model (MM)
ESD Min. - Human Body Model (HBM)
MSL Level
+4.3V
-1.5V < Vg < 0V
15 dBm
See MTTF Graph 1
175 ºC
7.0 W
12 ºC/W
-40 to +85 ºC
-65 to +150 ºC
See solder reflow profile
Class A
Class 1A
MSL3
January 2011 - Rev 10-Jan-11
P1080-QU
Power Amplifier Measurements
Page 2 of 6
37.0-40.0 GHz GaAs Power Amplifier
QFN, 7x7mm
XP1080-QU-0N00; Output IP3 vs Freq
Vd=4V, Id=1000mA
30
32
34
36
38
40
42
44
46
37 37.5 38 38.5 39 39.5 40
Frequency (GHz)
OIP3 (dBm)
XP1080-QU-0N00; C/I3 vs Freq
Pscl=14dBm, Vd=4V, Id=1000mA
40
42
44
46
48
50
52
54
56
58
60
37 37.5 38 38.5 39 39.5 40
Frequency (GHz)
C/I3 (dBc)
XP1080-QU-0N00: Small signal Gain (S21)
Vd=4.0V, Id=1000mA
10
12
14
16
18
20
22
24
26
28
30
37 37.5 38 38.5 39 39.5 40
Frequency (GHz)
|S21| (dB)
XP1080-QU-0N00: Input Return Loss (S11)
Vd=4.0V, Id=1000mA
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
37 37.5 38 38.5 39 39.5 40
Frequency (GHz)
|S11| (dB)
XP1080-QU-0N00: Output Return Loss (S22)
Vd=4.0V, Id=1000mA
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
37 37.5 38 38.5 39 39.5 40
Frequency (GHz)
|S22| (dB)
XP1080-QU-0N00: Reverse Isolation (S12)
Vd=4.0V, Id=1000mA
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
37 37.5 38 38.5 39 39.5 40
Frequency (GHz)
|S12| (dB)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2011 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2011 - Rev 10-Jan-11
P1080-QU
Power Amplifier Measurements (cont.)
Page 3 of 6
37.0-40.0 GHz GaAs Power Amplifier
QFN, 7x7mm
XP1080-QU: P1dB vs Freq
Vd=4V, Id=1000mA
25
25.5
26
26.5
27
27.5
28
28.5
29
29.5
30
37 37.5 38 38.5 39 39.5 40
Frequency (GHz)
XP1080-QU: Psat vs Freq
Vd=4V, Id=1000mA
25
25.5
26
26.5
27
27.5
28
28.5
29
29.5
30
37 37.5 38 38.5 39 39.5 40
Frequency (GHz)
XP1080-QU: Detector Output (Diff) vs Freq
Vd=4V, Id=1000mA, Vdet/ref Bias = +5V/100k
10
100
1000
10000
0 5 10 15 20 25 30
Pout (dBm)
37GHz
38.25GHz
39.5GHz
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2011 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2011 - Rev 10-Jan-11
P1080-QU
Page 4 of 6
Functional Block Diagram/Board Layout
Physical Dimensions/Layout
QU
Bypass Capacitors - See App Note [2]
37.0-40.0 GHz GaAs Power Amplifier
QFN, 7x7mm
Pin
Number
Pin
Name Pin Function Nominal Value
1 RF IN RF Input 0
2 VG1 Gate bias, Stage 1 -0.3 V, 700k .
3 VG2 Gate bias, Stage 2 -0.3 V, 700k .
4 VG3 Gate bias, Stage 3 -0.3 V, 600k .
detcennoC toNCN6,5
7 Vref Detector reference
output
+5.0 V thru
100k (2.5M )
8 Vdet Detector output +5.0 V thru
100k (2.5M )
9RF
OUT RF Output >1M
10 VD3 Drain bias for stage 3 +4.0 V, 533mA,
0.9
11 VD2 Drain bias for stage 2 +4.0 V, 267mA,
1.1
12 VD1 Drain bias for stage 1 +4.0 V, 200mA,
1.6
detcennoC toNCN41,31
detcennoC toNCDP51
detcennoC toNADP61
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2011 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2011 - Rev 10-Jan-11
1 9
5
RF IN
VD3VD2VD1
RF OUT
VG1 VG2 VG3 VdetVref
7
8
2
3
4
16
15
14
13
12
11
6
10
PDA PDC NC NC
NC NC
P1080-QU
Page 5 of 6
App Note [1] Biasing - It is recommended to bias the amplifier with Vd=4.0V and Id=1000mA. It is also recommended to use active biasing
to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply
voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a
low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain
current and thus drain voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is protected with Silicon diodes to limit
the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive
drain supply.
App Note [2] Bias Arrangement -
Each DC pin (Vd1,2,3 and Vg1,2,3) needs to have DC bypass capacitance (10 nF/1 uF) as close to the package as possible.
App Note [3] Power Detector - As shown in the schematic below, the power detector is implemented by providing +5V bias and measuring
the difference in output voltage with standard op-amp in a differential mode configuration.
MTTF
Typical Application
37.0-40.0 GHz GaAs Power Amplifier
QFN, 7x7mm
XP1080-QK-0N00: MTTF hours vs Package Base Temperature
Vd=4V, Id=1000mA
1.0E+03
1.0E+04
1.0E+05
1.0E+06
1.0E+07
1.0E+08
1.0E+09
1.0E+10
1.0E+11
1.0E+12
1.0E+13
1.0E+14
20 30 40 50 60 70 80 90 100 110 120 130
Package Base Temp (ºC)
MTTF (hours)
XP1080-QK-0N00: Tch(max) vs Package Base Temperature
Vd=4V, Id=1000mA
50
75
100
125
150
175
200
20 30 40 50 60 70 80 90 100 110 120 130
Package Base Temp (ºC)
Tch max (ºC)
XP1080-QK-0N00: Operating Power De-rating Curve
(continuous)
0
1
2
3
4
5
6
7
8
25 50 75 100 125 150 175
Package Base Temp (ºC)
Pdiss (W)
XB1014-QT XP1080-QU
TX Filter
(if required)
X2
DET
TX
XU1019-QH
DRIVER PA + DET
DIPLEXER
IF IN
LO
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2011 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2011 - Rev 10-Jan-11
P1080-QU
Page 6 of 6
Handling and Assembly Information
Ordering Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these
by-products are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life
support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain
life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its
safety or effectiveness.
Package Attachment - This packaged product from Mimix Broadband is provided as a rugged surface mount package compatible
with high volume solder installation. Vacuum tools or other suitable pick and place equipment may be used to pick and place this
part. Care should be taken to ensure that there are no voids or gaps in the solder connection so that good RF, DC and ground
connections are maintained. Voids or gaps can eventually lead not only to RF performance degradation, but reduced reliability and
life of the product due to thermal stress.
Mimix Lead-Free RoHS Compliant Program - Mimix has an active program in place to meet customer and governmental
requirements for eliminating lead (Pb) and other environmentally hazardous materials from our products. All Mimix RoHS compliant
components are form, fit and functional replacements for their non-RoHS equivalents. Lead plating of our RoHS compliant parts is
100% matte tin (Sn) over copper alloy and is backwards compatible with current standard SnPb low-temperature reflow processes as
well as higher temperature (260°C reflow) “Pb Free” processes.
Part Number for Ordering Description
XP1080-QU-0N00 Ni/Au plated RoHS compliant 7x7 28L surface mount package in bulk quantity
XP1080-QU-0N0T Ni/Au plated RoHS compliant 7x7 28L surface mount package in tape and reel
XP1080-QU-EV1 XP1080-QU evaluation board
Typical Reflow Profiles
Reflow Profile
Ramp Up Rate
Activation Time and Temperature
Time Above Melting Point
Max Peak Temperature
Time Within 5 ºC of Peak
Ramp Down Rate
SnPb
3-4 ºC/sec
60-120 sec @ 140-160 ºC
60-150 sec
240 ºC
10-20 sec
4-6 ºC/sec
Pb Free
3-4 ºC/sec
60-180 sec @ 170-200 ºC
60-150 sec
265 ºC
10-20 sec
4-6 ºC/sec
Caution: ESD Sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Proper ESD procedures should be followed when handling this device.
37.0-40.0 GHz GaAs Power Amplifier
QFN, 7x7mm
Factory Automation and Identification
Mimix
Designator
-QU
Package
Type
QFN (7x7mm)
P1 Component
Pitch
12mm
P0 Hole
Pitch
4mm
W Tape
Width
16mm
Number of
leads offered
28
Reel
Diameter
329mm (13in)
Units
per Reel
1000
Component Orientation: Parts are to be oriented with the PIN 1 closest to the tape's round sprocket holes on the tape’s trailing edge.
Note: Tape and Reel packaging is ordered with a -0N0T suffix. Package is available in 500 unit reels through designated sales channels.
Minimum order quantities should be discussed with your local sales representative.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2011 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2011 - Rev 10-Jan-11