Power Module
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
146
MG12300WB-BN2MM
1200V 300A IGBT Module
Features
RoHS
Applications
• IGBT3 CHIP(Trench+Field
Stop technology)
• Low saturation voltage
and positive temperature
coefcient
• Fast switching and short
tail current
• Free wheeling diodes
with fast and soft reverse
recovery
• Temperature sense
included
• AC motor control
• Motion/servo control
• Photovoltaic/Fuel cell
• Inverter and power
supplies
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified)
Symbol Parameters Test Conditions Values Unit
IGBT
VCES Collector - Emitter Voltage TJ=25°C 1200 V
VGES Gate - Emitter Voltage ±20 V
ICDC Collector Current TC=25°C 500 A
TC=80°C 300 A
ICM Repetitive Peak Collector Current tp=1ms 600 A
Ptot Power Dissipation Per IGBT 1400 W
Diode
VRRM Repetitive Reverse Voltage TJ=25°C 1200 V
IF(AV) Average Forward Current TC=25°C 300 A
TC=80°C 180 A
IFRM Repetitive Peak Forward Current tp=1ms 600 A
I2tTJ =125°C, t=10ms, VR=0V 17500 A2s
Module Characteristics (TJ = 25°C, unless otherwise specified)
Symbol Parameters Test Conditions Min Typ Max Unit
TJ max Max. Junction Temperature 150 °C
TJ op Operating Temperature -40 125 °C
Tstg Storage Temperature -40 125 °C
Visol Insulation Test Voltage AC, t=1min 3000 V
CTI Comparative Tracking Index 210
Torque Module-to-Sink Recommended (M5) 2.5 5N·m
Torque Module Electrodes Recommended (M6) 3 5 N·m
Weight 350 g
MG12300WB-BN2MM
1
Power Module
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
147
MG12300WB-BN2MM
1200V 300A IGBT Module
Symbol Parameters Test Conditions Min Typ Max Unit
IGBT
VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=12mA 5.0 5.8 6.5 V
VCE(sat)
Collector - Emitter IC=300A, VGE=15V, TJ=25°C 1. 7 V
Saturation Voltage IC=300A, VGE=15V, TJ=125°C 2.0 V
IICES Collector Leakage Current VCE=1200V, VGE=0V, TJ=25°C 1mA
VCE=1200V, VGE=0V, TJ=125°C 5mA
IGES Gate Leakage Current VCE=0V, VGE=±15V, TJ=125°C -400 400 nA
RGint Integrated Gate Resistor 2.5 Ω
Qge Gate Charge VCE=600V, IC=300A , VGE=±15V 2.7 μC
Cies Input Capacitance VCE=25V, VGE=0V, f =1MHz 21 nF
Cres Reverse Transfer Capacitance 1. 0 nF
td(on) Turn - on Delay Time
VCC=600V
IC=300A
RG =2.4Ω
VGE=±15V
Inductive Load
T J=25°C 160 ns
TJ=125°C 170 ns
trRise Time T J=25°C 45 ns
TJ=125°C 50 ns
td(off) Turn - off Delay Time T J=25°C 460 ns
TJ=125°C 530 ns
tfFall Time T J=25°C 10 0 ns
TJ=125°C 150 ns
Eon Turn - on Energy T J=25°C 13 mJ
TJ=125°C 20 mJ
Eoff Turn - off Energy T J=25°C 25 mJ
TJ=125°C 37 mJ
ISC Short Circuit Current tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V 1200 A
RthJC Junction-to-Case Thermal Resistance (Per IGBT) 0.09 K/W
Diode
VFForward Voltage IF=300A, VGE=0V, TJ =25°C 1.65 V
IF=300A, VGE=0V, TJ =125°C 1. 6 V
tRR Reverse Recovery Time IF=300A, VR=600V
diF/dt=-4800A/µs
TJ=125°C
225 ns
IRRM Max. Reverse Recovery Current 255 A
Erec Reverse Recovery Energy 24 mJ
RthJCD Junction-to-Case Thermal Resistance (Per Diode) 0.16 K/W
Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified)
2
NTC Characteristics (TJ = 25°C, unless otherwise specified)
Symbol Parameters Test Conditions Min Typ Max Unit
R25 Resistance Tc=25°C 5 KΩ
B25/50 3375 K
Power Module
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
148
MG12300WB-BN2MM
1200V 300A IGBT Module
Figure 1: Typical Output Characteristics
for IGBT Inverter
I
C
(A)
V
CE
˄V˅
T
J
=125°C
T
J =25°C
600
500
300
200
100
0
0 0.5 1.0 1.5 2.0 2.5 3.5
V
GE
=15V
400
3.0
Figure 2: Typical Output Characteristics
for IGBT Inverter
VGE˄V˅
0
IC (A)
TJ
=125°C
TJ
=25°C
VCE =20V
1210 9 7 6 5 8 11
600
500
300
200
100
400
Figure 3: Typical Transfer Characteristics
for IGBT Inverter
120
20
40
004428
Eon Eoff
(
mJ
)
E
on
E
of
f
RG˄Ω˅
V
CE
=600V
I
C
=300A
V
GE
=±15V
TJ
=125°C
12 16
80
100
60
20
Figure 4: Switching Energy vs. Gate Resistor
for IGBT Inverter
0 100
IC˄A˅
V
CE
=600V
R
G
=2.4Ω
V
GE
=±15V
T
J
=125°C
400 300
200
E
off
E
on
0
10
20
30
90
Eon Eoff
(
mJ
)
60
600
500
80
70
40
50
Figure 5: Switching Energy vs. Collector Current
for IGBT Inverter
Figure 6: Reverse Biased Safe Operating Area
for IGBT Inverter
0
100
200
300
500
700
0200 400 600 800 1000 1200
V
CE
˄V˅
1400
R
G
=2.4Ω
V
GE
=±15V
T
J
=125°C
I
C
(A)
400
600
V
CE
˄V˅
4.0 3.5 3.0 2.5 1.51.00.50
I
C
(A)
T
J
=125°C
2.04.5 5.0
0
GE
V=11V
GE
V= 9V
GE
V=13V
GE
V=15V
GE
V=17V
GE
V=19V
600
500
300
200
100
400
3
Power Module
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
149
MG12300WB-BN2MM
1200V 300A IGBT Module
Figure 7: Diode Forward Characteristics
for Diode Inverter
VF˄V˅
0.4
0 0.8 1.2 1.6 2.4
0
IF
(
A
)
TJ
=25°C
TJ
=125°C
2.0
600
500
300
200
100
400
E
rec
mJ
R
G
˄Ω˅
04812 16 24
16
12
8
4
0
20
32
I
F
=300
A
V
CE
=600V
T
J
=125°C
20
28
24
Figure 8: Switching Energy vs. Gate Resistort
for Diode Inverter
Rectangular Pulse Duration (seconds)
ZthJC
(
K/W
)
0.001 0.01 0.11 10
0.001
0.01
0.1
1
Diode
IGBT
Figure 9: Transient Thermal Impedance of
Diode and IGBT Inverter
T
C
˄°C˅
100000
10000
1000
100020 40 60 80 100 140
120 160
R
Figure 10: NTC Characteristics
Circuit Diagram
4
Power Module
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
150
MG12300WB-BN2MM
1200V 300A IGBT Module
Part Numbering System Part Marking System
PRODUCT TYPE
M: Power Module
MODULE TYPE
G: IGBT
CIRCUIT TYPE
WAFER TYPE
PACKAGE TYPE
MG12300 WB - B N2 MM
VOLTAGE RATING
CURRENT RATING
ASSEMBLY SITE
12: 1200V
300: 300A
2x(IGBT+FWD)
LOT NUMBER
Space
reserved
for QR
code
MG12300WB-BN2MM
Dimensions-Package WB
Packing Options
Part Number Marking Weight Packing Mode M.O.Q
MG12300WB-BN2MM MG12300WB-BN2MM 350g Bulk Pack 60
5
The foot pins are in gold / nickel coating