MOTOROU Order this document by 2C2WHV/D SEMICONDUCTOR TECHNICAL DATA o *,\ Y,+* ,., `).., $ . , ,,,.. t?,~ , .:;: ,11 ,:``>,,:R' IllIlk J L 2C2484HV Chip NPN Silicon Small-ignal Transistor ..designed for hig~ain, Iowoiee amptifierapplications. p o `: ~ Operstlon ~E~ `R'wTnehnologlsa . hfe = 250 Min @ 1.0 kHz NF=2.OdB Max@ 10kHz ,$, \ :.s MAXIMUM RATINGS Rting Symbol Value Colleotor+mitter Vokge VCEO 60 Coil-or+ase VCBO 60 VEBO 6.0 Voltage EmMer+ase Vobge Coll*or Current Ic Power Dissiwtion @ TA = 25C Derate above 25C PD ;~i Tqg, TJ Storaga and Junotion Temperature Range ELECTRICAL CHARACTERISTICS UA = 25C unlqj&@etiSe o Vdc mAdo mW mW/oC ~, &yf+2Qo ~,,,,,+,,: :M,>* F,., ..,. `$:~ `c noted.) Max -- Vti 60 -- v& v(BR)EBO 6.0 -- Vds Colleotor Cutoff Cuwent.: `S$v$ ~CE = 5.0 VW) , .::,+$ $ iCEO -- 2.0 nAdc Coll@or CutOfi cm~~ ~cE . & V*(:*C ICES -- 5.0 nAdo 5.0 10 nAk ~dc 2.0 nAdc Oolleotor-Emitter Bretiown (!c = 10 mAdc) Voltage* Coll@or+ase Breakdown Vokge (1C= 1.0 @&) Emitter4aae Br-down (iE = 10 ~do) -+*. ,,..~\$*,. `$+:%2?(BR)CBO ,*.\,. ,,. ," ~+k ~,, ,, 1'$ VoMgq~?tr ,+$i$xt..,,,,,:<,! 2*;.!.,>, .+t, ,-~,,,.,.= `JRY colleotor*:~*ent ~CB *$ ~~) ~@;y;*'vdCv TA = 150c) }CBO ~m~.$tioff IEBO $~~ `hysical characteristics: Unit .+.' OFF CHARAOTERISTIOS a ,,,P?~;+,:j$ \!\,\F,;,.!* ~.$, ~~~q6'*F' Charactertattc `+$"~ $'c'~vh ,..~r? :,,~~a. Current Ie Size -- 18x18 roils Ie Thlcknees -- 8x 11 roils ond Pad Size: Emitier -- 4.7 q. Base -- 4.4 q. ack Metal 20 ~ Gold (Nom) Dp Me&l 15 ~ Alum. (Nom) ack Stale= Cotlwtor = 5.0 Vdc) Pulsed. Pulse Width 250 to 350 w, D@ QCle 1.0 to 2.OYO. (mntinued) Uw o 91es @ Motorola,Inc. 19M M-ROLA @ ELECTRICAL CHARACTERISTICS - conUnuW CA. 250c unless othetise noted.) s~bol Charactertattc Min Mu Unit ON CHARACTERISTICS DC Cument Gain ([c = 1.0 fide, VCE = 5.0 Vdo) (1c -10 @&, VCE = 5.0 Vdo) (IC = 100 @de, VCE = 5.0 Vdo) -- hFE 45 200 225 250 250 225 35 (1c.500 ~do, vCE = 5.0 Vdo) (1c= l.o ~do, vCE -5.0 V*) (1c= 10 tik, vCE .5.0 Vky (1c. 10 @do, VCE = 5.0 VdO,'TA= -65"C) Colleotor-Emitter Saturation Vobge (1c = 1.0 MAW, IB. 100 ~dc) Emitter+ase Saturation Vohge (Ic. VCE(~at) 100 ~do, IB -5.0 V&) 500 675 800 800 800 ~.3+~,,J$ ""` .,.>+*..* ,,$~~ -- vBE(Sat) ,;* .,T&7j `v' 0.5 \l>. SMALL+IGNAL CHARACTERISTICS Output Capaoitanoe ~CB. 5.0 Vdo, IE = O,f = 100 kHz -1.0 MHz) Vohge Feedba~ Ratio (1c. 1.0 mAdo, VCE = 5.0 V&, f. 1.0 kHz) hre 1.0 Wdo, VCE. 5.0 V*, f = 1.0 kHz) hfe ,, $;: .:; l~ep~: ,$~ ,.,$. , . SmalWignel Current Transfer Ratio, Magnitude (1c = 50 @do, VCE = 5.0 Vdo, f = 5.0 MHz) ..: .'*4 >,t"! !,*;,~i.~,, ~ (1c= 500 ~do, vCE -5.0 VW, f = 30 MHz) Noise Figure (lC=lO@do, (lC=lO@&, (Ic = 10 @de, (Ic = 10 @do, ..rh.>~ ,:* -- ".71$ ~`>.~,+ !.(.,, .. `.-" ,:,, ~p.,${'/{ ,:k!** ",,.-' .:$$; q~ @e OutputAdm.moe .,,, ., .'V -- ,.;)'.,* "" `~?+ 5.0 cob Input Impedanw (lc = 1.0 mA&, VCE = 5.0 Vdo, f = 1.0 kHz) Current Gain (Ic. (Ic = 1.0 MA*, VCE = 5.0 V*, f = 1.0 kHz) tf `! b~~:jw:,$hm ~il::<$k + NF ~~l$. ,,:. ,., .... Deltafrom.@&An MeasuredValues ,,,..,, ..,, * Current AIcBO AhFE to 350 W, D* Vdo pF 8.0 pF 24 m 800 x 10-4 `:250 900 -- 3.0 2.0 -- 7.0 -- 4.0 -- 7.5 3.0 2.0 3.0 pmhos dB VCE=5.0Vdo, RG=lO~f=100Hz) VCE=5.0Vd0, RG=lO~f=l.O Hz) ,,+# `F VCE = 5.0 Vdo, RG = 10 ~ f = 10 Hz) ,$:~`%*, VCE -5.0 Vdo, RG = 10 ~ f -10 ~:m,~7 kHz) Deb COIIXXW ,:?,> .$..*... .\:$.> :,~t, `!8 *,~~, ,~l,,,,$t$,,, \ \,>, ;~ Vdc s::*::l;**,* Input Capacitanw ~BE -0.5 V&, Ic = O,f. 100 kHz -1.0 MHz) SmalWgnel ,*!. `*{,3, es:<.\.*:<2~, ,,;c:'">:,t+ ` ,`:,+., k.,x ~""F +k\.. ~.~` ~..}) ,>;yi\*. ..:* {.+.,,*,* $. ~~.. .5. :.:.\: -- Mln Mex -- *100 or W.O Wchever is greater YOof Initial Value ti5 % of Initial Value -- Qde 1.0 to 2.OYO. COMMERCIAL PLUS AND MIUAERO SMALL SIGNAL TRANSISTOR DATA nAdo tir-, .--t. 2C2484HV ,.. I ,. Literetum Dlettibutlon Cente~ USA MotorolaUtemtureDitibutio~ P.O.Box2091~ Phoenk,ArizonaS502S. EUROPEMotorolaLtd.;EuropeanLfiereWreOentr~W TannersDrive,Bl~elends,MiltonKeynes,MK145BP,England. Shirregaw@, To~o 141, Japan. JAPAN Nip~n Motorola Ltd.; &2-1, Nshl@o_, ASIAPACIFIC:MotorolaSemiwndu@oreH.K.Ltd; Sllbn HerbourOenter,No.2 DaiNng Street,TalPoIndustrialEstate,TaiPo,N.T.,HongKong. @ M~ROLA e . lPH~4101 1-2 PRINTED IN USA WW MPWPOD CPTO YDACAA 2C2WHVID llllllllllllllllllllllllllllllllllllllllllllllllll