Transistor SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE RT1N141X is a one chip transistor with built-in bias resistor,PNP type is RT1P141X. DRAWING RT1N141U UNITmm RT1N141C 1.6 0.4 FEATURE 2.5 0.8 0.4 0.5 1.5 0.5 0.4 0.95 0.95 1.6 1.0 2.9 1.90 0.3 0.5 0.5 Built-in bias resistor (R1=10k,R2=10k). APPLICATION B (IN) C (OUT) 0.16 00.1 0.8 00.1 Equivalent circuit R1 1.1 0.15 0.55 0.7 Inverted circuit,switching circuit,interface circuit, driver circuit. JEITA JEDEC R2 E (GND) JEITASC-59 JEDECSimilar to TO-236 Terminal Connector Base Emitter Collector Terminal Connector Base Emitter Collector RT1N141M RT1N141T RT1N141S 2.1 JEITA JEDEC Terminal Connector Emitter Collector Base 0.2 0.45 0.15 00.1 0.7 0.9 0.4 0.8 1.2 0.8 0.3 0.65 2.0 1.3 0.45 1.27 1.27 2.5 0.65 1.0 14.0 1.0 0.1 0.2 0.25 0.425 0.4 1.25 3.0 0.425 0.4 4.0 JEITASC-70 JEDEC Terminal Connector Base Emitter Collector ISAHAYA ELECTRONICS CORPORATION JEITA JEDEC Terminal Connector Base Emitter Collector Transistor SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type MAXIMUM RATING (Ta=25) SYMBOL PARAMETER RT1N141T Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25) Junction temperature Storage temperature RT1N141U 125 RATING RT1N141M 50 10 50 100 200 150 RT1N141C UNIT V V V mA mA 200 +125 -55+125 RT1N141S 450 mW +150 -55+150 package mounted on 9mmx19mmx1mm glass-epoxy substrate. ELECTRICAL CHARACTERISTICS (Ta=25) SYMBOL PARAMETER TEST CONDITION C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input on voltage Input off voltage Input resistance Resistance ratio Gain band width product MIN 50 I C=100ARBE= VCB=50VI E =0 VCE=5VI C =10mA I C =10mAI B =0.5mA VCE=0.2VI C =5mA VCE=5VI C =100A VCE=6VI E LIMIT TYP 0.1 50 0.8 7.0 0.9 =-10mA 0.1 1.5 1.1 10 1.0 200 TYPICAL CHARACTERISTICS Input On Voltage - Collector Current DC Forward Current Gain - Collector Current 1000 DC Forward Current Gain Input On Voltage 10 VCE=0.2V 1 0.1 1 10 100 Collector Current VCE=5V 100 10 1 Collector Current 10 Collector Current Collector Current - Input Off Voltage 1000 VCE=5V 100 10 0.0 0.4 0.8 1.2 1.6 MAX 2.0 Input Off Voltage ISAHAYA ELECTRONICS CORPORATION 100 0.3 3.0 13 1.1 UNIT V A V V V k MHz Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! *ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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