〈Transistor〉
ＲＴ１Ｎ１４１Ｘ SERIES Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
DESCRIPTION OUTLINE DRAWING UNIT：mm
RT1N141U RT1N141C
RT1N141X is a one chip transistor
with built-in bias resistor,PNP type is RT1P141X.
FEATURE
・Built-in bias resistor (R1=10kΩ,R2=10kΩ).
APPLICATION
Inverted circuit,switching circuit,interface circuit,
driver circuit.
Equivalent circuit
JEITA：－
JEDEC：－
JEITA：SC-59
JEDEC：Similar to TO-236
Terminal Connector
①：Base
②：Emitter
③：Collector
Terminal Connector
①：Base
②：Emitter
③：Collector
RT1N141M RT1N141T
RT1N141S
JEITA：－
JEDEC：－
JEITA：－
JEDEC：
Terminal Connector
①：Emitter
②：Collector
③：Base
JEITA：SC-70
JEDEC：－
Terminal Connector
①：Base
②：Emitter
③：Collector
Terminal Connector
①：Base
②：Emitter
③：Collector
0.15
0～0.1
0.55
0.7
0.3
0.40.80.4
1.6
0.5 0.5
1.0
1.6
①
②③
0.16
0～0.1
0.8
1.1
0.4
0.51.50.5
2.5
0.95 0.95
1.90
2.9
①
② ③
ISAHAYA ELECTRONICS CORPORATION
C
(OUT)
E
(GND)
B
(IN)
R1
R2
0.15
0～0.1
0.7
0.9
0.3
1.25
0.425
2.1
0.65 0.65
1.3
2.0
①
②③
0.425
4.0
1.0
1.0
14.0 3.0
1.27 1.27
0.45
0.1
2.5
0.4
① ② ③
0.45
0.25
0.2
0.8
0.2
0.4 0.4
0.8
1.2
①
②
③
〈Transistor〉
ＲＴ１Ｎ１４１Ｘ SERIES Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
MAXIMUM RATING (Ta=25℃)
RATING
SYMBOL PARAMETER RT1N141T RT1N141U RT1N141M RT1N141C RT1N141S UNIT
ＶＣＢＯ Collector to Base voltage 50 V
ＶＥＢＯ Emitter to Base voltage 10 V
ＶＣＥＯ Collector to Emitter voltage 50 V
Ｉ Ｃ
Collector current 100 mA
Ｉ ＣＭ
Peak Collector current 200 mA
ＰＣ Collector
dissipation(Ta=25℃) 125（※） 150 200 450 mW
Ｔｊ Junction temperature +125 +150 ℃
Ｔｓｔｇ Storage temperature -55～+125 -55～+150 ℃
（※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
LIMIT
SYMBOL PARAMETER TEST CONDITION MIN TYP MAX UNIT
Ｖ（ＢＲ）ＣＥＯ C to E break down voltage I C
=100μA，RBE=∞ 50 V
Ｉ ＣＢＯ
Collector cut off current VCB=50V，I E
=0 0.1 μA
ｈＦＥ DC forward current gain VCE=5V，I C
=10mA 50 －
ＶＣＥ（ｓａｔ） C to E saturation voltage I C
=10mA，I B
=0.5mA 0.1 0.3 V
ＶＩ（ＯＮ） Input on voltage VCE=0.2V，I C
=5mA 1.5 3.0 V
ＶＩ（ＯＦＦ） Input off voltage VCE=5V，I C
=100μA 0.8 1.1 V
Ｒ１ Input resistance 7.0 10 13 kΩ
Ｒ２／Ｒ１ Resistance ratio 0.9 1.0 1.1
ｆＴ Gain band width product VCE=6V，I E
=-10mA 200 MHz
TYPICAL CHARACTERISTICS
ISAHAYA ELECTRONICS CORPORATION
Input On Voltage - Collector Current
0.1
1
10
110100
Collector Current ＩＣ（ｍＡ）
Collector Current - Input Off Voltage
10
100
1000
0.00.40.81.21.62.0
Input Off Voltage ＶＩ（ＯＦＦ）（Ｖ）
DC Forward Current Gain - Collector Current
10
100
1000
1 10 100
Collector Current ＩＣ（ｍＡ）
Input On Voltage ＶＩ（ＯＮ）
DC Forward Current Gain ｈＦＥ
Collector Current ＩＣ （ｍＡ）
VCE=0.2V VCE=5V
VCE=5V
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunct
ion or
mishap.
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the
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,
originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
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at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation
without notice
due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics
Corporation or an authorized ISAHAYA products distr ibutor for the latest product information
before purchasing product listed
herein.
·
ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used
under circumstances in which human lif
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Jan.2003
