NTMFS4C01N Power MOSFET 30 V, 0.9 mW, 303 A, Single N-Channel, SO-8FL Features * * * * Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX 0.9 mW @ 10 V 30 V 303 A 1.2 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Notes 1, 3) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State Symbol Value Unit VDSS 30 V VGS "20 V TC = 25C ID 303 A TC = 25C PD 134 W TA = 25C ID 47 A Gate-to-Source Voltage D (5) G (4) S (1,2,3) N-CHANNEL MOSFET Steady State Power Dissipation RqJA (Notes 1, 2, 3) Pulsed Drain Current TA = 25C TA = 25C, tp = 10 ms PD 3.2 W IDM 552 A TJ, Tstg -55 to 150 C IS 110 A Single Pulse Drain-to-Source Avalanche Energy (IL(pk) = 35 A) EAS 862 mJ Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL 260 C Operating Junction and Storage Temperature Source Current (Body Diode) THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Symbol Value Unit Junction-to-Case - Steady State RqJC 0.93 C/W Junction-to-Ambient - Steady State (Note 2) RqJA 39 Parameter 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface-mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. (c) Semiconductor Components Industries, LLC, 2014 1 MARKING DIAGRAM D 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. July, 2018 - Rev. 2 ID MAX SO-8 FLAT LEAD CASE 488AA STYLE 1 A Y W ZZ S S S G D 4C01N AYWZZ D D = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION Device Package Shipping NTMFS4C01NT1G SO-8FL (Pb-Free) 1500 / Tape & Reel NTMFS4C01NT3G SO-8FL (Pb-Free) 5000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTMFS4C01N/D NTMFS4C01N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS V 16.3 VGS = 0 V, VDS = 24 V mV/C TJ = 25 C 1 TJ = 125C 100 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH)/TJ RDS(on) Forward Transconductance gFS Gate Resistance RG 1.3 2.2 5.8 V mV/C VGS = 10 V ID = 30 A 0.71 0.9 VGS = 4.5 V ID = 30 A 0.94 1.2 VDS = 3 V ID = 30 A 183 S 1.0 W TA = 25 C mW CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 148 Total Gate Charge QG(TOT) 63 Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD Total Gate Charge 10144 VGS = 0 V, f = 1 MHz, VDS = 15 V 5073 pF 18 VGS = 4.5 V, VDS = 15 V; ID = 30 A nC 29 13 QG(TOT) VGS = 10 V, VDS = 15 V, ID = 30 A 139 nC SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) 29 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 68 ns 53 36 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25C 0.73 TJ = 125C 0.55 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.1 V 87 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 43 ns 44 147 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS4C01N TYPICAL CHARACTERISTICS 400 400 10 V 3.6 V 3.2 V 300 4.5 V 250 200 3.0 V 150 2.8 V 100 50 VGS = 2.6 V 250 200 TJ = 25C 150 100 TJ = 150C TJ = -55C 0 0.0 0.5 1.0 1.5 2.0 2.5 1.5 3.0 2.5 3 3.5 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1.5 ID = 30 A 1.4 TJ = 25C 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 3 2 VDS, DRAIN-TO-SOURCE VOLTAGE (V) RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) 300 50 0 4 5 6 7 8 9 10 4 1.5 TJ = 25C 1.4 1.3 1.2 1.1 VGS = 4.5 V 1.0 0.9 0.8 VGS = 10 V 0.7 0.6 0 50 100 150 200 250 300 350 400 VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate-to-Source Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage 100000 1.8 1.6 VGS = 10 V ID = 30 A IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN-TO- SOURCE RESISTANCE (W) VDS = 3 V 350 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 350 3.4 V 1.4 1.2 1.0 10000 TJ = 125C TJ = 100C 1000 TJ = 85C 100 0.8 0.6 -50 -25 0 25 50 75 100 125 150 10 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage www.onsemi.com 3 30 NTMFS4C01N VGS, GATE-TO-SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 100k CISS 10k COSS 1k VGS = 0 V TJ = 25C f = 1 MHz 100 CRSS 10 0.1 10 1 12 11 15 10 9 VDS VGS 8 12 7 6 9 5 4 QGD QGS 6 VDS = 15 V ID = 30 A TJ = 25C 3 2 1 0 0 100 20 40 60 80 100 3 0 140 120 VDS, DRAIN-TO-SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 1000 1000 tr IS, SOURCE CURRENT (A) td(off) VGS = 4.5 V VDD = 15 V ID = 15 A tf td(on) 100 10 100 10 1 TJ = 150C 0.1 0.1 1 10 100 0.3 0.4 TJ = 25C 0.5 0.6 0.7 TJ = -55C 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 ID, DRAIN CURRENT (A) t, TIME (ns) 18 QT VDS, DRAIN-TO-SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 100 100 ms 10 1 1 ms 10 ms 0 V < VGS < 10 V SINGLE PULSE TC = 25C 0.1 DC RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.01 0.1 1 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 100 NTMFS4C01N TYPICAL CHARACTERISTICS 100 RqJA = Steady State = 39C/W Duty Cycle = 0.5 0.2 0.1 0.05 1 0.02 0.01 R(t) (C/W) 10 PCB Cu Area = 650 mm2 PCB Cu Thk = 2 oz 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 t, TIME (s) Figure 12. Thermal Impedance (Junction-to-Ambient) 1000 100 IPEAK, (A) 0.001 TJ(initial) = 25C 10 TJ(initial) = 100C 1 1.00E-04 1.00E-03 TIME IN AVALANCHE (s) Figure 13. Avalanche Characteristics www.onsemi.com 5 1.00E-02 10 100 1000 NTMFS4C01N PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO-8FL) CASE 488AA ISSUE N 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 q E 2 c 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q A1 4 TOP VIEW C SEATING PLANE DETAIL A 0.10 C A 0.10 C SIDE VIEW RECOMMENDED SOLDERING FOOTPRINT* DETAIL A 2X 0.10 b C A B 0.05 c 0.495 4.560 8X MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --- 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ --- 12 _ STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 2X 1.530 e/2 e L 1 2X 0.475 4 3.200 K 4.530 E2 PIN 5 (EXPOSED PAD) L1 M 1.330 2X 0.905 1 G 0.965 D2 4X 1.000 4X 0.750 BOTTOM VIEW 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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