© Semiconductor Components Industries, LLC, 2011
September, 2011 − Rev. 5
1Publication Order Number:
BC517/D
BC517
Darlington Transistors
NPN Silicon
Features
•These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCES 30 Vdc
Collector−Base Voltage VCB 40 Vdc
Emitter−Base Voltage VEB 10 Vdc
Collector Current − Continuous IC1.0 Adc
Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C
PD625
12
mW
mW/°C
Total Power Dissipation @ TC = 25°C
Derate above TC = 25°C
PD1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping†
ORDERING INFORMATION
BC517G TO−92
(Pb−Free)
5000 Units / Bulk
http://onsemi.com
BC517RL1G TO−92
(Pb−Free)
2000 / Tape & Reel
BC517ZL1G TO−92
(Pb−Free)
2000 / Ammo Pack
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
COLLECTOR 1
BASE
2
EMITTER 3
123
12
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92
CASE 29
STYLE 17
MARKING DIAGRAM
BC
517
AYWW G
G
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
BC517
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 2.0 mAdc, IBE = 0)
V(BR)CES 30 − −
Vdc
Collector−Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO 40 − −
Vdc
Emitter−Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO 10 − −
Vdc
Collector Cutoff Current
(VCE = 30 Vdc)
ICES − − 500
nAdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO − − 100
nAdc
Emitter Cutoff Current
(VCB = 10 Vdc, IC = 0)
IEBO − − 100
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 20 mAdc, VCE = 2.0 Vdc)
hFE 30,000 − −
−
Collector−Emitter Saturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
VCE(sat) − − 1.0
Vdc
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, VCE = 5.0 Vdc)
VBE(on) − − 1.4
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT−200 −
MHz
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
2. fT = |hfe|• ftest
RSin
enIDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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3
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
Figure 2. Noise Voltage
f, FREQUENCY (Hz)
50
100
200
500
20
Figure 3. Noise Current
f, FREQUENCY (Hz)
Figure 4. Total Wideband Noise Voltage
RS, SOURCE RESISTANCE (kW)
Figure 5. Wideband Noise Figure
RS, SOURCE RESISTANCE (kW)
5.0
50
70
100
200
30
10
20
1.0
10
10
20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
BANDWIDTH = 1.0 Hz
RS ≈ 0
IC = 1.0 mA
100 mA
10 mA
BANDWIDTH = 1.0 Hz
IC = 1.0 mA
100 mA
10 mA
en, NOISE VOLTAGE (nV)
in, NOISE CURRENT (pA)
2.0 5.0 10 20 50 100 200 500 1000
BANDWIDTH = 10 Hz TO 15.7 kHz
IC = 10 mA
100 mA
1.0 mA
8.0
10
12
14
6.0
0
4.0
1.0 2.0 5.0 10 20 50 100 200 500 1000
2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
10 mA
100 mA
IC = 1.0 mA
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
NF, NOISE FIGURE (dB)
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
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4
SMALL−SIGNAL CHARACTERISTICS
Figure 6. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
5.0
7.0
10
20
3.0
Figure 7. High Frequency Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
2.0
200k
5.0
0.04
4.0
2.0
1.0
0.8
0.6
0.4
0.2
TJ = 25°C
C, CAPACITANCE (pF)
1.5
2.0
2.5
3.0
1.0
0.5
|hfe|, SMALL-SIGNAL CURRENT GAIN
hFE, DC CURRENT GAIN
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40
Cibo
Cobo
0.5 1.0 2.0 0.5 10 20 50 100 200 500
VCE = 5.0 V
f = 100 MHz
TJ = 25°C
100k
70k
50k
30k
20k
10k
7.0k
5.0k
3.0k
2.0k 7.0 10 20 30 50 70 100 200 300 500
TJ = 125°C
25°C
-55°C
VCE = 5.0 V
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
TJ = 25°C
IC = 10 mA 50 mA 250 mA 500 mA
Figure 10. “On” Voltages
IC, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
1.6
5.0
-1.0
V, VOLTAGE (VOLTS)
1.4
1.2
1.0
0.8
0.6 7.0 10 20 30 50 70 100 200 300 500
VBE(sat) @ IC/IB = 1000
RV, TEMPERATURE COEFFICIENTS (mV/ C)°
θ
TJ = 25°C
VBE(on) @ VCE = 5.0 V
VCE(sat) @ IC/IB = 1000
-2.0
-3.0
-4.0
-5.0
-6.0
5.0 7.0 10 20 30 50 70 100 200 300 500
25°C TO 125°C
-55°C TO 25°C
*RqVC FOR VCE(sat)
qVB FOR VBE
25°C TO 125°C
-55°C TO 25°C
*APPLIES FOR IC/IB ≤ hFE/3.0
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5
Figure 12. Thermal Response
t, TIME (ms)
1.0
()
2.0 5.01.00.50.20.1
RESISTANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20 5010 200 500100 1.0k 2.0k 5.0k 10k
Figure 13. Active Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0k
0.4
700
500
300
200
100
70
50
30
20
10 0.6 1.0 2.0 4.0 6.0 10 20 40
IC, COLLECTOR CURRENT (mA)
TA = 25°C
D = 0.5
0.2
0.1 0.05 SINGLE PULSE
SINGLE PULSE
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
ZqJC(t) = r(t) • RqJCTJ(pk) - TC = P(pk) ZqJC(t)
ZqJA(t) = r(t) • RqJATJ(pk) - TA = P(pk) ZqJA(t)
1.0 ms
100 ms
TC = 25°C
1.0 s
Design Note: Use of Transient Thermal Resistance Data
FIGURE A
tP
PPPP
t1
1/f
DUTYCYCLE +t1f +
t1
tP
PEAK PULSE POWER = PP
BC517
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6
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.04 2.66
P--- 0.100 --- 2.54
R0.115 --- 2.93 ---
V0.135 --- 3.43 ---
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
RA
P
J
B
K
G
SECTION X−X
C
V
D
N
XX
SEATING
PLANE DIM MIN MAX
MILLIMETERS
A4.45 5.20
B4.32 5.33
C3.18 4.19
D0.40 0.54
G2.40 2.80
J0.39 0.50
K12.70 ---
N2.04 2.66
P1.50 4.00
R2.93 ---
V3.43 ---
1
T
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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Phone: 81−3−5773−3850
BC517/D
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