Specifications and information are subject to change without notice.
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sal es@tq s .co m • Web site: www.TriQuint.com Page 1 of 9 July 2010
AH420
4W High Linearity InGaP HBT Amplifier
Product Features
• 400 – 2700 MHz
• +35.7 dBm P1dB
• -49 dBc ACLR @ 26 dBm
• 14 dB Gain @ 2140 MHz
• 800 mA Quiescent Current
• +5 V Single Supply
• MTTF > 100 Years
• Lead-free/green/RoHS-compliant
12-pin 4x5mm DFN Package
Applications
• Final stage amplifiers for Repeaters
• High Power Amplifiers
• Mobile Infrastructure
• LTE / WCDMA / EDGE / CDMA
Product Description
The AH420 is a high dynamic range amplifier in a low-cost
surface mount package. The InGaP/GaAs HBT is able to
achieve high performance with -49 dBc ACLR and +35.7
dBm of compressed 1dB power, operating off of a single
+5V supply. It is housed in a lead-free/green/RoHS-
compliant 4x5mm DFN package. All devices are 100% RF
and DC tested.
The AH420 is targeted for use as a final stage amplifier in
wireless infrastructure repeaters or as driver stages for high
power amplifiers where high performance is required. In
addition, the amplifier can be used for a wide variety of
other applications within the 400 to 2700 MHz frequency
band. By operating off of a single +5V rail, other higher
voltage rails are not necessarily needed thus saving system
costs. The amplifier also has the flexibility to operate at
higher voltage levels to achieve higher compression if
needed by the system.
Functional Diagram
Function Pin No.
RFIN 3,4,5,6
RFOUT 7,8,9,10
IREF 12
VBIAS 1
NC 2,11
Specifications
Parameter Units Min Typ Max
Operational Bandwidth MHz 400 2700
Test Frequency MHz 2140
Output Channel Power dBm +26
Gain dB 13 14 16
Input Return Loss dB 12
Output Return Loss dB 7.4
ACLR (2) dBc -49
Output P1dB dBm +35.7
Output IP3 (4) dBm +46.5 +50
Quiescent Collector Current
(
3
)
mA 710 800 900
Iref mA 20
Vcc, Vbias V +5
1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW
3. This corresponds to the quiescent current under small-signal conditions into pins 6, 7, and 8 when
the current setting resistor, R4 connected to the Iref pin, is at 82 Ω.
4. OIP3 is measured with two tones at out an output power of +27 dBm/tone separated by 1 MHz.
The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Ratings
Parameter Rating
Storage Temperature -65 to +150 °C
Vcc, Vbias +14 V
RF Input Power, CW, 50 Ω, T=25°C Input P9dB
Reference Current, Iref 170 mA
Dissipated Power, Pmax 7 W
Max Junction Temperature, TJ
For 106 hours MTTF 158 °C
Thermal Resistance, ΘJC 10.6 °C / W
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
Parameter Units Typical
Frequency MHz 940 1960 2140
Channel Power dBm +27 +27 +26
Gain dB 16 14.1 14
Input Return Loss dB 14 19 12
Output Return Loss dB 6.4 7 7.4
ACLR (2) dBc -46.5 -48 -49
Output P1dB dBm +35.2 +35.6 +35.7
Noise Figure dB 6.6 5.3 5.6
Output IP3 (4) dBm +50 +49 +50
Quiescent Collector Current
(
3
)
mA 800
Iref mA 20
Vcc, Vbias V +5
5. The amplifier has been tested for ruggedness to be capable of handling:
10:1 VSWR @ 5Vcc, 2140MHz, +35.2dBm CW Pout, 25 °C
10:1 VSWR @ 5Vcc, 940MHz, +28.5dBm IS-95A Pout, 25 °C
10:1 VSWR @ 5Vcc, 2140MHz, +26.5dBm WCDMA Pout, 25 °C
Ordering Information
Part No. Description
AH420-EG 4W High Linearity InGaP HBT Amplifier
AH420-EPCB900 920-960 MHz Evaluation Board
AH420-EPCB1960 1930-1990 MHz Evaluation Board
AH420-EPCB2140 2110-2170 MHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel.
Specifications and information are subject to change without notice.
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sal es@tq s .co m • Web site: www.TriQuint.com Page 2 of 9 July 2010
AH420
4W High Linearity InGaP HBT Amplifier
Application Circuit PC Board Layout
Vpd
GND
Vcc
GND
Circuit Board Material: 0.014” GETEK, single layer, 1 oz copper, εr = 4.2,
Microstrip line details: width = .030”, marker spacing = .050”
Baseplate Configuration
Notes:
1. Please note that for reliable operation, the evaluation board will have to be mounted to a
much larger heat sink during operation and in laboratory environments to dissipate the
power consumed by the device. The use of a convection fan is also recommended in
laboratory environments.
2. The area around the module underneath the PCB should not contain any soldermask in
order to maintain good RF grounding.
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sal es@tq s .co m • Web site: www.TriQuint.com Page 3 of 9 July 2010
AH420
4W High Linearity InGaP HBT Amplifier
Typical Device Data
S-Parameters (VCC= +5 V, ICC = 800 mA, 25 °C, unmatched 50 ohm system)
0246
Frequency (GHz)
Gain / Ma ximum Stable Gain
-40
-20
0
20
40
60
Gain (dB)
DB(GMax())
AH420_EG DB(|S(2,1)|)
AH420_EG
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S11
Swp Max
6GHz
Swp Min
0.01GHz
S(1,1)
AH420_EG
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S22
Swp Max
6GHz
Swp Min
0.01GHz
S(2,2)
AH420_EG
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that
actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the red line.
S-Parameters (VCC = +5 V, ICQ = 800 mA, 25 °C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB ) S11 (de g) S2 1 (dB) S21 (deg) S12 (dB) S12 (deg) S22 (dB) S22 (deg)
10 -1.22 -176.79 29.97 155.67 -52.77 64.11 -1.61 -39.70
50 -0.44 -177.23 24.42 117.15 -45.04 32.25 -1.05 -122.90
100 -0.31 -178.77 19.17 103.73 -44.01 11.29 -1.16 -150.31
300 -0.28 179.40 10.27 90.61 -43.22 5.32 -0.94 -169.59
500 -0.30 178.17 6.16 84.91 -43.10 -0.42 -0.93 -174.28
700 -0.40 176.72 3.74 79.16 -43.48 36.07 -1.02 -177.33
900 -0.43 175.77 2.09 74.69 -41.72 5.11 -1.07 -177.23
1100 -0.50 173.96 0.99 69.01 -41.21 -1.08 -1.11 -178.10
1300 -0.59 171.86 0.42 62.55 -40.35 -4.63 -1.15 -178.55
1500 -0.74 169.75 0.16 55.48 -39.33 -10.41 -1.21 -179.14
1700 -0.98 167.20 0.25 46.05 -38.86 -20.47 -1.24 -179.88
1900 -1.40 164.19 0.63 34.50 -38.13 -34.84 -1.24 179.85
2100 -2.04 161.94 1.22 18.13 -36.71 -51.74 -1.19 179.15
2300 -2.78 163.47 1.53 -4.61 -35.70 -78.76 -0.95 178.06
2500 -2.88 169.61 0.74 -32.66 -36.03 -114.19 -0.62 175.59
2700 -2.04 171.93 -1.59 -58.88 -37.72 -145.67 -0.52 171.28
2900 -1.32 169.73 -4.55 -77.51 -39.74 -179.01 -0.55 168.08
3100 -0.95 167.05 -7.58 -90.68 -41.31 163.85 -0.68 165.55
3300 -0.78 164.66 -10.52 -100.04 -42.50 141.73 -0.80 164.25
3500 -0.69 162.98 -13.08 -106.66 -43.74 129.82 -0.87 162.92
3700 -0.63 161.89 -15.60 -112.19 -42.73 112.53 -0.90 162.24
3900 -0.61 161.39 -17.79 -116.53 -43.74 105.15 -0.92 161.57
4100 -0.58 161.33 -19.66 -121.50 -43.35 107.61 -0.92 161.67
4300 -0.54 161.51 -21.87 -124.38 -42.62 97.03 -0.97 162.11
Device S-parameters are available for download off of the website at: http://www.tqs.com
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sal es@tq s .co m • Web site: www.TriQuint.com Page 4 of 9 July 2010
AH420
4W High Linearity InGaP HBT Amplifier
920-960 MHz Reference Design (AH420-EPCB900)
W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW
Typical W-CDMA Performance at 25°C
Frequency (MHz) 920 940 960 Units
Channel Power +27 +27 +27 dBm
Power Gain 15.9 16 16.1 dB
Input Return Loss 17 14 11 dB
Output Return Loss 5.3 6.4 8.0 dB
ACLR -47 -46.5 -46.5 dBc
P1dB +35.2 +35.2 +35.2 dBm
Output IP3
At 27dBm/tone, 1MHz spacing +51 +50 +49 dBm
Noise Figure 6.5 6.6 6.7 dB
Quiescent Current, Icq 800 mA
Vpd, Vcc +5 V
C8
C22
C7
FB1 L1
R2
R4
C3
C4
C5
C6
C12
C15
C13
C14
C17
R1
C1
R3
D1
C2
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Do not exceed 5.5V on Vpd and Vcc or damage will occur to D1.
3. Components shown on the silkscreen but not on the schematic are not used.
4. Vpd used for device power down (low=RF off)
5. The edge of C13 is placed at 75mil from AH420 RFout pin. (3.9 o @ 940 MHz)
6. The edge of C15 is placed 145mil from the edge of C13. (7.5 o @ 940 MHz)
7. The edge of C14 is placed at 150mil from AH420 Rfin pin. (7.7 o @ 940 MHz)
8. The edge of C17 is placed against the edge of C14.
9. 0 Ω jumpers can be replaced with copper trace in target application.
Gain vs. Frequency
T=25°C
14
15
16
17
18
0.90 0.92 0.94 0.96 0.98
Frequency (GHz)
Gain (dB)
Return Loss
T=25°C
-25
-20
-15
-10
-5
0
0.90 0.92 0.94 0.96 0.98
Frequency (GHz)
S11, S22 (dB)
S11 S22
35
40
45
50
55
20 22 24 26 28 30
OIP3 (dBm)
Output P ower (dBm)
OIP3 vs. Output Power/Tone vs. Temperature
f=940 MHz
+25°C -40°C +85°C
-65
-60
-55
-50
-45
-40
-35
15 16 17 18 19 20 21 22 23 24 25
ACLR (dBc)
Output Powe r (dBm)
ACLR vs. Output Average Power vs. Frequency
T=25°C
920 MHz 940 MHz 960 MHz
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Pr obab ility
3.84 MHz BW
42
44
46
48
50
52
24 25 26 27 28 29 30
OIP3 (dBm)
Output Power (dBm)
OIP3 vs. Output Power/Tone vs. Frequency
T=25°C
920 MHz 940 MHz 960 MHz
P1dB vs. Frequency vs. Temperature
33
34
35
36
37
920 930 940 950 960
Frequency (MHz)
P1dB (dBm)
+25°C -40°C +85°C
Current vs Output Average Power vs. Frequency
T=25°C
850
900
950
1000
1050
1100
24 25 26 27 28 29 30
Output Power (dBm)
Collector Current (mA)
920 MHz 940 MHz 960 MHz
Noise Figure vs. Frequency
T=25°C
4
5
6
7
8
0.90 0.92 0.94 0.96 0.98
Frequency (GHz)
NF (dB)
Efficiency vs Output Average Power vs. Frequency
T=25°C
0
5
10
15
20
24 25 26 27 28 29 30
Output Power (dBm)
Collector Efficiency (%)
920 MHz 940 MHz 960 MHz
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sal es@tq s .co m • Web site: www.TriQuint.com Page 5 of 9 July 2010
AH420
4W High Linearity InGaP HBT Amplifier
1930-1990 MHz Reference Design (AH420-EPCB1960)
W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW
Typical W-CDMA Performance at 25°C
Frequency (MHz) 1930 1960 1990 Units
Channel Power +27 +27 +27 dBm
Power Gain 13.4 14.1 14.1 dB
Input Return Loss 13 19 11 dB
Output Return Loss 4.7 7 12 dB
ACLR -49 -48 -47 dBc
P1dB +35.6 +35.6 +35.6 dBm
Output IP3
At 27dBm/tone, 1MHz spacing +49 +49 +49 dBm
Noise Figure 5.6 5.3 5.3 dB
Quiescent Current, Icq 800 mA
Vpd, Vcc +5 V
C8
C9
C10
C11
C7
FB1 L1
R2
R4
C3
C4
C5
C6
C12
C16
C15
C13
C14
C17
C2
R1
C1
R3
D1
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Do not exceed 5.5V on Vpd and Vcc or damage will occur to D1.
3. Components shown on the silkscreen but not on the schematic are not used.
4. Vpd used for device power down (low=RF off)
5. The edge of C13 is placed at 75mil from AH420 RFout pin. (8.0 o @ 1960 MHz)
6. The edge of C15 is placed 50mil from the edge of C13. (5.3 o @ 1960 MHz)
7. The edge of C16 is placed 345mil from the edge of C15. (37 o @ 1960 MHz)
8. The edge of C14 is placed at 160mil from AH420 Rfin pin. (17.2 o @ 1960 MHz)
9. The edge of C17 is placed 95mil from the edge of C14. (10.2 o @ 1960 MHz)
10. 0 Ω jumpers can be replaced with copper trace in target application.
Gain vs. Frequency
T=25°C
10
11
12
13
14
15
1.92 1.94 1.96 1.98 2.00
Frequency (GHz)
Gain (dB)
Return Loss
T=25°C
-25
-20
-15
-10
-5
0
1.92 1.94 1.96 1.98 2.00
Frequency (GHz)
S11, S22 (dB)
S11 S22
ACLR vs. Output Average Power vs. Frequency
T=25°C
-60
-55
-50
-45
-40
-35
24 25 26 27 28 29
Output Power (dBm)
ACLR (dBc)
1930 MHz 1960 MHz 1990 MHz
Current vs Output Average Power vs. Frequency
T=25°C
800
850
900
950
1000
1050
24 25 26 27 28 29
Output Power (dBm)
Collector Current (mA)
1930 MHz 1960 MHz 1990 MHz
4
5
6
7
8
1.90 1.92 1.94 1.96 1.98 2.00
NF (dB )
Frequency (GHz)
Noise Figure vs. Frequency
T=25°C
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sal es@tq s .co m • Web site: www.TriQuint.com Page 6 of 9 July 2010
AH420
4W High Linearity InGaP HBT Amplifier
2010-2025 MHz Application Circuit Performance Plots
TD-SCDMA 3 Carrier, PAR = 10 dB @ 0.01% Probability, 1.28 MHz BW
Typical TD-SCDMA Performance at 25°C
Frequency (MHz) 2010 2015 2025 Units
Channel Power 24 24 24 dBm
Power Gain 13.6 13.6 13.7 dB
Input Return Loss 22 21 20 dB
Output Return Loss 4.8 5 5.1 dB
ACLR -50 -50 -50 dBc
P1dB +34 +34 +34 dBm
Output IP3
At +25 dBm/tone, 1MHz spacing +56 +56 +55 dBm
Noise Figure 5.5 5.5 5.5 dB
Quiescent Current, Icq 800 mA
Vpd +5
V
Vcc +5 V
FB1 L1
R2
R4
C15
C13
C17
R3
C16
C23
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The edge of C13 is placed at 70 mil from AH420 RFout pin. (7.7o @ 2015 MHz)
4. The edge of C15 is placed nex to the edge of C13.
5. The edge of C16 is placed 30 mil from the edge of C15. (3.3 o @ 2015 MHz)
6. The edge of C14 is placed at 145 mil from AH420 RFin pin. (16o @ 2015 MHz)
7. The edge of C17 is placed 115 mil from the edge of C14. (12.7 o @ 2015 MHz)
10
11
12
13
14
15
2.00 2.01 2.02 2.03 2.04
Gain (d B)
Frequency (GHz)
Gain vs. Frequency
T=25°C
-30
-25
-20
-15
-10
-5
0
2.00 2.01 2.02 2.03 2.04
S1 1, S22 (dB)
Frequency (GHz)
Return Loss
T=25°C
S11 S22
800
825
850
875
18 19 20 21 22 23 24 25 26
Collector Current (mA)
Output Powe r (dBm)
Current vs Ou tp ut Average Power vs. F requ ency
T=25°C
2010 MHz 2015 MHz 2025 MHz
-60
-58
-56
-54
-52
-50
-48
-46
-44
-42
-40
19 20 21 22 23 24 25
ACLR (dBc)
Output Power (dBm)
ACLR vs. Outpu t Average Pow er vs. Frequ ency
T=25°C
2010 MHz 2015 MHz 2025 MHz
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sal es@tq s .co m • Web site: www.TriQuint.com Page 7 of 9 July 2010
AH420
4W High Linearity InGaP HBT Amplifier
2110-2170 MHz Reference Design (AH420-EPCB2140)
W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW
Typical W-CDMA Performance at 25°C
Frequency (GHz) 2110 2140 2170 Units
Channel Power +26 +26 +26 dBm
Power Gain 13.3 14 14 dB
Input Return Loss 14 12 10 dB
Output Return Loss 5 7.4 9 dB
ACLR -50 -49 -50 dBc
P1dB +35.8 +35.7 +35.2 dBm
Output IP3
At 27dBm/tone, 1MHz spacing +49 +50 +50 dBm
Noise Figure 5.8 5.6 5.5 dB
Quiescent Current, Icq 800 mA
Vpd, Vcc +5 V
C8
C20
C21
C22
C7
FB1 L1
R2
R4
C3
C4
C5
C6
C12
C16
C15
C13
C14
C17
C2
R1
C1
R3
D1
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Do not exceed 5.5V on Vpd and Vcc or damage will occur to D1.
3. Components shown on the silkscreen but not on the schematic are not used.
4. Vpd used for device power down (low=RF off)
5. The edge of C13 is placed at 65mil from AH420 RFout pin. (7.6 o @ 2140 MHz)
6. The edge of C15 is placed 60mil from the edge of C13. (7.0 o @ 2140 MHz)
7. The edge of C16 is placed 340mil from the edge of C15. (39.9 o @ 2140 MHz)
8. The edge of C14 is placed at 155mil from AH420 RFin pin. (18.2 o @ 2140 MHz)
9. The edge of C17 is placed 205mil from the edge of C14. (24.0 o @ 2140 MHz)
10. 0 Ω jumpers can be replaced with copper trace in target application.
Gain vs. Frequency
T=25°C
10
11
12
13
14
15
2.10 2.12 2.14 2.16 2.18 2.20
Frequenc y (GHz)
Gain (dB)
Return Loss
T=25°C
-25
-20
-15
-10
-5
0
2.10 2.12 2.14 2.16 2.18 2.20
Frequency (GHz)
S11, S22 (dB)
S11 S22
ACLR vs. Output Average Power vs. Frequency
T=25°C
-60
-55
-50
-45
-40
-35
24 25 26 27 28 29
Output Power (dBm)
ACLR (dBc)
2110 MHz 2140 MHz 2170 MHz
ACLR vs. Output Average Power vs. Temperature
-65
-60
-55
-50
-45
-40
23 24 25 26 27 28
Output Power (dBm)
ACLR (dBc)
+25°C -40°C +85°C
OIP3 vs. Output Power / tone vs . Frequ enc y
35
40
45
50
55
20 22 24 26 28 30
Output Power / tone (dBm)
OIP3 (dBm)
2140 MHz 2110 MHz 2170 MHz
35
40
45
50
55
20 22 24 26 28 30
OIP3 (dBm)
Output P ower (dBm)
OIP3 vs. Output Power/Tone vs. Temperature
f=2140 MHz
+25°C -40°C +85°C
P1dB vs. Frequency vs. Temperature
34
35
36
37
38
2.10 2.12 2.14 2.16 2.18 2.20
Frequency (GHz)
P1dB (dBm)
+25°C -40°C +85°C
Current vs Output Average Power vs. Frequency
T=25°C
800
850
900
950
1000
1050
24 25 26 27 28 29
Output Power (dBm)
Collector Current (mA)
2110 MHz 2140 MHz 2170 MHz
Noise Figure vs. Frequency
T=25°C
4
5
6
7
8
2.10 2.12 2.14 2.16 2.18 2.20
Frequency (GHz)
NF (dB)
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sal es@tq s .co m • Web site: www.TriQuint.com Page 8 of 9 July 2010
AH420
4W High Linearity InGaP HBT Amplifier
2.3-2.4 GHz Application Circuit Performance Plots
802.16-2004 O-FDMA, 64QA M-1/2, 1024-FFT, 20 sy mbols and 30 subchannels, 5 MH z Carrier B W
Typical O-FDMA Performance at 25°C
Frequency (GHz) 2.3 2.35 2.4 Units
Channel Power +27 +27 +27 dBm
Gain 12.8 13.2 13.6 dB
Input Return Loss 18 16 13 dB
Output Return Loss 4 5.2 7.3 dB
EVM 2 1.9 2 %
Operating Current, Icc 955 920 890 mA
Collector Efficiency 10.4 11 11 %
Quiescent Current, Icq 800 mA
Vcc, Vpd +5 V
C8
C22
C7
FB1 L1
R2
R4
C3
C4
C5
C6
C12
C15
C13
C14
C17
R1
C1
R3
D1
C21
C20
C2
Circuit Board Material: 0.014” GETEK, single layer, 1 oz copper,
ε
r
= 4.2, Microstrip line details: width = .030”, spacing = .030”
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Do not exceed 5.5V on Vpd or Vcc or damage to D1 will occur.
3. Components shown on the silkscreen but not on the schematic are not used.
4. C1 & C12 can be replaced with a copper trace.
5. 0 Ω jumpers can be replaced with copper trace in target application.
6. The edge of C17 is placed 55 mil from the AH420 RFin pin. (7.1o @ 2.35 GHz)
7. The edge of C14 is placed 70 mil from the edge of C17. (9.0o @ 2.35 GHz)
8. The edge of C13 is placed 55 mil from the AH420 RFout pin. (7.1o @ 2.35 GHz)
9. The edge of C15 is placed 70 mil from the edge of C13. (9.0o @ 2.35 GHz)
10
11
12
13
14
15
2.25 2.30 2.35 2.40 2.45
Gain (dB)
Frequency (GHz)
Gain vs. Frequency
T=25°C
-30
-25
-20
-15
-10
-5
0
2.25 2.30 2.35 2.40 2.45
S1 1, S22 (dB)
Frequency (GHz)
Return Loss
T=25°C
S11 S22
0
1
2
3
4
5
20 22 24 26 28 30
EVM (%)
Output Power (dBm)
EVM vs. Outp ut Average Power vs. Frequ ency
T=25°C
2.3 GHz 2.35 GHz 2.4 GHz
802.16-2004 O-FDMA, 64QAM-
1/2, 1024-FFT, 20 symbols and 30
subchannels, 5 MHz Carrier BW
800
850
900
950
1000
1050
1100
1150
22 23 24 25 26 27 28 29 30
Collector Current (mA)
Output Powe r (dBm)
Current vs Ou tp ut Average Power vs. F requ ency
T=25°C
2.3 GHz 2.35 GHz 2.4 GHz
0
5
10
15
20
20 22 24 26 28 30
Collector Efficiency (%)
Output Power (dBm)
Efficiency vs Outp ut Average Power vs. Frequ ency
T=25°C
2.3 GHz 2.35 GHz 2.4 GHz
-60
-55
-50
-45
-40
-35
-30
20 22 24 26 28 30
ACLR (dBc)
Output P owe r (dBm)
ACLR vs. Output Average Power vs. Frequency
T=25°C
2.3 GHz 2.35 GHz 2.4 G Hz
W-CDMA 3GPP Te st Model1+64
DPCH, PAR=10.3 dB @ 0.01%
Probability, 3.84 MHz BW
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sal es@tq s .co m • Web site: www.TriQuint.com Page 9 of 9 July 2010
AH420
4W High Linearity InGaP HBT Amplifier
Mechanical Information
This package is lead-free/green/RoHS-compliant. The plating material on the backside metallization is Matte Tin. It is compatible with both
lead-free (maximum 260 °C reflow temperature) and lead (maximum 245 °C reflow temperature) soldering processes.
Outline Drawing
Mounting Configuration / Land Pattern
Notes:
1. A heatsink underneath the area of the PCB for the mounted device is recommended for proper thermal
operation. Damage to the device can occur without the use of one.
2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80
/ .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”).
3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal
performance.
4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground /
thermal via region contacts the heatsink.
5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink.
6. RF trace width depends upon the PC board material and construction.
7. Use 1 oz. Copper minimum.
8. All dimensions are in millimeters
Product Marking
The AH420 will be marked with an “AH420G”
designator with a lot code marked below the
part designator. The “Y” represents the last
digit of the year the part was manufactured, the
“XXX” is an auto-generated number, and “Z”
refers to a wafer number in a lot batch.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating: Class 1A
Value: Passes 250V to <500V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
ESD Rating: Class IV
Value: Passes ≥ 1000V min.
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260 °C convection reflow
Standard: JEDEC Standard J-STD-020
Functional Pin Layout
Pin Function
1 VBIAS
2, 11 No Connect
3, 4, 5, 6 RF Input
7, 8, 9, 10 VCC / RF Output
12 IREF
AH420G
YXXX-Z
