Advanced Power MOSFET IRF820A FEATURES -?--f-f Oo Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10uA (Max.) @ Vps = 500V Lower Ropgon): 2-000 (Typ.) Absolute Maximum Ratings Rogion) = 3.00 TO-220 Ta 1.Gate 2. Drain 3. Source Symbol Characteristic Value Units Voss Drain-to-Source Voltage 500 Vv lo Continuous Drain Current (T.=25C) 2.5 A Continuous Drain Current (T.=100C) 1.6 lom Drain Current-Pulsed (1) 8 A Ves Gate-to-Source Voltage +30 Vv Eas Single Pulsed Avalanche Energy (2) 208 mJ lar Avalanche Current (1) 2.5 A Ear Repetitive Avalanche Energy (1) 4.9 mJ dv/dt Peak Diode Recovery dv/dt (3) 3.5 V/ns Total Power Dissipation (T.=25C) 49 W Po Linear Derating Factor 0.39 w/c Operating Junction and Ty , Tste - 55 to +150 Storage Temperature Range Maximum Lead Temp. for Soldering C TL Purposes, 1/8. from case for 5-seconds 300 Thermal Resistance Symbol Characteristic Typ. Max. Units Rose Junction-to-Case - 2.57 Recs Case-to-Sink 0.5 -- C/W Resa Junction-to-Ambient - 62.5 re Rev. B FAIRCHILD SEMICONDUCTOR 1999 Fairchild Semiconductor CorporationIRF820A N-CHANNEL POWER MOSFET Electrical Characteristics (T,=25C unless otherwise specified) Symbol Characteristic Min. | Typ. | Max. Units Test Condition BVpss_| Drain-Source Breakdown Voltage | 500| -- -- Vs] Vesg=0V,Ip=250nA ABV/AT, | Breakdown Voltage Temp. Coeff. | -- |0.68] -- |V/C|lp=250uA See Fig 7 Vash) | Gate Threshold Voltage 2.0] - | 4.0] V_ | Vps=5V,lp=250nA Gate-Source Leakage , Forward - | -- | 100 nA Vgg=30V ass Gate-Source Leakage , Reverse -- -- |-100 Vag=-30V . -- -- 10 Vps=500V loss Drain-to-Source Leakage Current _ . | 400 pA Vps=400V,T.=125C Static Drain-Source R -- -- 3.0 Vv =10V,I =1.25A (4) Psion) | On-State Resistance o os Gis Forward Transconductance -- 72.06] -- oO Vos=50V,Ip=1.25A (4) Ciss Input Capacitance -- | 390] 510 + Vas=0V,Vps=25V, Ff =1 MHz Coss | Output Capacitance - | 50 | 60] pF : - See Fig 5 Cres Reverse Transfer Capacitance - | 22 | 26 tan) | Turn-On Delay Time - | 12 | 35 ; , Vpp=250V,Ip=2.5A, t, Rise Time - | 15 | 40 , ns | Rg=18Q tary | Turn-Off Delay Time -- | 55 | 120 ; " See Fig 13 (4) (5) t Fall Time -- | 17 | 45 Q, Total Gate Charge - | 19 | 26 Vps=400V,Vas=10V, Qgs Gate-Source Charge - | 26] - | nC | 1p=2.5A Qga Gate-Drain (. Miller. ) Charge -- 10 - See Fig 6 & Fig 12 (4) (5) Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. | Typ. | Max.| Units Test Condition Ig Continuous Source Current -- - | 2.5 A Integral reverse pn-diode lou Pulsed-Source Current (1) | -- -- 8 in the MOSFET Vep Diode Forward Voltage (4) | -- - [1.4 [| V_ | T)=25C,|s=2.5A,Ves=0V tre Reverse Recovery Time -- | 235] -- ns | Ty=25C,|-=2.5A Q Reverse Recovery Charge -- | 1.2 | -- | pC | di./dt=100A/us (4) Notes; 1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2) L=60mH, |,g=2.5A, V_p=50V, Rg=27Q, Starting T,=25C 4) Pulse Test: Pulse Width = 250us, Duty Cycle < 2% ( ( (3) Isp <2.5A, di/dt < 100A/us, Vpp < BVpgg Starting T, =25C ( ( 5) Essentially Independent of Operating Temperature ee FAIRCHILD Ed SEMICONDUCTORN-CHANNEL POWER MOSFET IRF820A Fig 1. Output Characteristics Ves Top : 15V 10V B0V 7OV 60V S5V w@ 50V & i Bottom : 45V 1 LO oo @ Nites : 1. 20ys Rilse Test 2.7, =2C 1st wo i Vi, , Drain-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current Rosen) , [al @Nte : T =3C I, , Drain Current [A] Fig 5. Capacitance vs. Drain-Source Voltage Gas= Goat Gua ( Gus shorbed ) Gos Sst Ge Capacitance [pF] 0 2 4 6 8 10 Fig 2. Transfer Characteristics @Nebes : 1. Y, =0V 2. Yy =0V 3. 20.5 Rilse Test 8 10 Vos 1 Gabe-Sourne Voltage [V] Fig 4. Source-Drain Diode Forward Voltage & i we : _/___. f= / | / @ Notes : ~ : : 1.Y, =0V a wpc fo 2, BOs Pale Bet [. ae | Wo3 ea 06 ORL Vep 1 Scurce-Drain Voltage [V] Fig 6. Gate Charge vs. Gate-Source Voltage Yi, =10V tot ceceeeesneeedbeesees = VY, =20V. f erm : Se on 8 2 Qt : T,=2.58 o 5 10 5 2 ee FAIRCHILD SEMICONDUCTORIRF820A POWER MOSFET Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature 12 3.0 25 fen 20h a peal al! i L 05+ 0.0 15 ~B 1B Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature 3.0 wo L SEER ss(c0) 2.5 bau. < : J TF we Sf a ' & : et m7 i 20L..... i w a : i a io : " 1 R=BC a 2, T, =10C i) a 3, Single Pulse | : : : : 2 built i Il Il Il Il 00 a 1? wo a 3 5 105 rr 1 V,, , Drain-Saume Voltage [V] T, , Case Terperahire (c] ov a Gq 9 Q a Y % "a @ Notes :~ F 1. Zo5 (6)=2.57 C/W Max. g 2. Duty Factor, D=t, /t, ' ' a 3. Try -ToPpu*Z, 50 (t) 3 LLP u nu? . Lan} 1072 z 1 1 5 z 1 1 z 5 1 1 1 1075 107 107 107 107 10 10 t, , Square Wave Pulse Duration [sec] ee SEMICONDUCTORPOWER MOSFET IRF820A Fig 12. Gate Charge Test Circuit & Waveform . Current Regulator. 12V T 7 1OV = Vos Vos ct DUT L 3mA t R, R, oO 0 W- W- Charge urrent Sampling (Ig) | Current Sampling (Ip) Resistor Resistor Fig 13. Resistive Switching Test Circuit & Waveforms out Vin : a 10V seh siete ton loge Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L BVpss L Eas= 7 Ly las SO Vos > LHP - BVpgs -- Vpp Vary t, to obtain os Ip BVpss | - - - - required peak I, ro Ing | - - - - ) Cc = Vop Ip (t) DUT Vop Vos (t) 10V j~<_ +, | Time ee FAIRCHILD SEMICONDUCTORIRF820A N-CHANNEL POWER MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT _~| C+ A Vos L <-> 2 Ts of L OH. Driver Vas $ T R 7K) Same Type tL G Y as DUT = Vop Ves dv/dt controlled by . Rg. I, controlled by Duty Factor . D. O Vv Gate Pulse Width i GS D BS were . . . Gate Pulse Period 10V ( Driver ) | Igy Body Diode Forward Current Ts (DUT ) di/de to | XO Body Diode Reverse Current Vos (DUT ) Body Diode Recovery dv/dt \ Ve . tT Body Diode Forward Voltage Drop ee FAIRCHILD SEMICONDUCTORTRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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