WSE D MM 6115950 0000562 413 MMPTC, MICROSEMI CORP/POWER 7-33-13 TSB52020 Power Transistor Chip, NPN 20 A, 200 V, t, = 40 ns TECHNOLOGY @ Planar Epitaxial H@ Contact Metallization: Base and Emitter-Aluminum Collector{Au or Ti/Ni/Ag) 126 mil @ Chip Thickness: 22 mils @ Applications: Switching regulatiors Deflection circuits Motor controls PWM inverters 126 mil BBASE BONDING ARBA: 162 25 ails "B* EMITTER BONDING ARBA: 16x 33 mis Electrical Characteristics At 25C The chip is 100% probed to the conditions and limits specified. TEST CONDITIONS LIMITS UNITS CHARACTERISTIC VOLTAGE | CURRENT Vdc mAdc Vou | Van | Ic | Ip | MIN. | MAX. Collector-base breakdown voltage 0.1 200 VOLTS Collector-emitter breakdown voltage 16 { 0 75 VOLTS Emitter cut-off current 11 0 1.0 mA * DC current gain 4.0 1000 40 90 sores 100 Venosus)*" Collector-emitier sustaining voltage *Pulsed: pulse duration = 300 ps, duty factor < 2%, **Performed on assembled device evaluauion samples only. This voltage MUST NOT be measured on a curve tracer. Additional bled device ilable to MICROSEMI! CORPORATION Power Technology Components Division 23201 SOUTH NORMANDIE AVENUE TORRANCE, CALIFORNIA 90501 (213) 534-3737 FAX (213)530-5609 8190 FR