2SJ549(L), 2SJ549(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-644A (Z) 2nd. Edition Jul. 1998 Features * Low on-resistance R DS(on) = 0.11 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline LDPAK 4 4 D 1 1 G S 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ549(L),2SJ549(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS -60 V Gate to source voltage VGSS 20 V Drain current ID -12 A -48 A -12 A -12 A 12 mJ 50 W Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Avalenche current Avalenche energy I AP Note1 Note3 EAR Note3 Note2 Channel dissipation Pch Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Note: 2 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 2SJ549(L),2SJ549(S) Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS -60 -- -- V I D = -10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 20 -- -- V I G = 100A, VDS = 0 Zero gate voltege drain current I DSS -- -- -10 A VDS = -60 V, VGS = 0 Gate to source leak current I GSS -- -- 10 A VGS = 16V, VDS = 0 Gate to source cutoff voltage VGS(off) -1.0 -- -2.0 V I D = -1mA, VDS = -10V Static drain to source on state RDS(on) -- 0.11 0.15 I D = -6A, VGS = -10V Note4 resistance RDS(on) -- 0.16 0.23 I D = -6A, VGS = -4V Note4 Forward transfer admittance |yfs| 5 8 -- S I D = -6A, VDS = -10V Input capacitance Ciss -- 580 -- pF VDS = -10V Output capacitance Coss -- 300 -- pF VGS = 0 Reverse transfer capacitance Crss -- 85 -- pF f = 1MHz Turn-on delay time t d(on) -- 10 -- ns VGS = -10V, ID = -6A Rise time tr -- 55 -- ns RL = 6 Turn-off delay time t d(off) -- 85 -- ns Fall time tf -- 60 -- ns Body-drain diode forward voltage VDF -- -1.2 -- V I D = -12A, VGS = 0 Body-drain diode reverse recovery time -- 60 -- ns I F = -12A, VGS = 0 diF/ dt = 50A/s Note: t rr Note4 4. Pulse test 3 2SJ549(L),2SJ549(S) Main Characteristics Power vs. Temperature Derating -100 80 Maximum Safe Operation Area 10 s I D (A) Drain Current Channel Dissipation 0 50 100 150 -10 = 10 s( 1 ra tio n -2 -1 -0.5 m O pe -5 200 sh ot (T ) c= 25 Operation in this area is limited by R DS(on) ) -30 -100 (V) DS Typical Transfer Characteristics Typical Output Characteristics -10 -10 V -5 V -8 -4 V V DS = -10 V Pulse Test -3.5 V I D (A) -10 Pulse Test -6 Drain Current I D (A) C -0.2 Ta = 25 C -0.1 -0.1 -0.3 -1 -3 -10 Drain to Source Voltage V Case Temperature Tc (C) Drain Current D s m 20 PW 1 40 -20 s 60 0 10 Pch (W) -50 -3 V -4 -2 -2.5 V -8 -6 -4 Tc = 75 C 25 C -2 -25 C VGS = -2 V 0 4 -2 -4 -6 Drain to Source Voltage V -8 DS(V) -10 0 -1 -2 -3 Gate to Source Voltage V -4 (V) GS -5 2SJ549(L),2SJ549(S) Drain to Source Saturation Voltage V DS(on) (V) -1.0 Pulse Test -0.8 I D = -5 A -0.6 -0.4 Drain to Source On State Resistance R DS(on) ( W) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 1 0.5 VGS = -4 V 0.2 0.1 -10 V 0.05 -2 A -0.2 -1 A 0.02 Pulse Test 0.01 -4 -8 -12 Gate to Source Voltage -16 -20 V GS (V) Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4 0.3 0.2 I D = -5 A -2 A V GS = -4 V -1 A -5 A -1, -2 A 0.1 -10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C) -0.1 -0.3 -1 -3 Drain Current -10 -30 -100 I D (A) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance R DS(on) ( W) 0 20 10 Ta = -25 C 5 25 C 2 75 C 1 0.5 0.1 -0.1 -0.2 V DS = -10 V Pulse Test -0.5 -1 -2 -5 Drain Current I D (A) -10 5 2SJ549(L),2SJ549(S) 200 Ciss 100 50 20 500 200 50 Coss 10 20 di / dt = 50 A / s VGS = 0, Ta = 25 C 10 0 -20 I D = -10 A -40 V GS -60 -80 -100 0 -4 -8 V DS -12 V DD = -50 V -25 V -10 V 32 8 16 24 Gate Charge Qg (nc) -30 -40 -50 -16 -20 40 1000 Switching Time t (ns) V DD = -10 V -25 V -50 V -20 Switching Characteristics 0 V GS (V) 0 -10 Drain to Source Voltage V DS (V) Gate to Source Voltage V DS (V) Crss 100 Dynamic Input Characteristics Drain to Source Voltage VGS = 0 f = 1 MHz 1000 5 -0.1 -0.2 -0.5 -1 -2 -5 -10 Reverse Drain Current I DR (A) 6 Typical Capacitance vs. Drain to Source Voltage 2000 Capacitance C (pF) Reverse Recovery Time trr (ns) 500 Body-Drain Diode Reverse Recovery Time 300 V GS = -10 V, V DD = -30 V Pw = 5 s, duty < 1 % t d(off) 100 30 tf tr t d(on) 10 3 1 -0.1 -0.2 -0.5 -1 -2 -5 Drain Current I D (A) -10 2SJ549(L),2SJ549(S) Maximum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current vs. Source to Drain Voltage Repetitive Avalanche Energy E AR (mJ) Reverse Drain Current I DR (A) -10 -8 -6 -10 V V GS = 0, 5 V -4 -5 V -2 Pulse Test 0 -0.4 -0.8 -1.2 Source to Drain Voltage -1.6 -2.0 20 I AP = -12 A V DD = -25 V duty < 0.1 % Rg > 50 W 16 12 8 4 0 25 V SD (V) 50 75 100 125 150 Channel Temperature Tch (C) Avalanche Test Circuit V DS Monitor Avalanche Waveform EAR = L 1 2 * L * I AP * 2 I AP Monitor VDSS VDSS - V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin -15 V 50W 0 VDD 7 2SJ549(L),2SJ549(S) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermao Impedance g s (t) 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 q ch - c(t) = g s (t) * q ch - c q ch - c = 2.5 C/W, Tc = 25 C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu ho 1s 0.03 0.01 10 D= PW T PW T 100 1m 10 m 100 m Pulse Width PW (S) Switching Time Test Circuit Vout Monitor Vin Monitor 1 10 Waveform Vin 10% D.U.T. RL 90% Vin -10 V 50W V DD = -30 V Vout td(on) 8 90% 90% 10% 10% tr td(off) tf 2SJ549(L),2SJ549(S) Package Dimensions As of January, 2001 Unit: mm 2.54 0.5 (1.4) 2.54 0.5 11.3 0.5 10.0 1.27 0.2 0.2 0.86 +- 0.1 0.76 0.1 11.0 0.5 1.2 0.2 4.44 0.2 1.3 0.15 + 0.3 - 0.5 8.6 0.3 10.2 0.3 2.59 0.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (L) -- -- 1.4 g 9 2SJ549(L),2SJ549(S) As of January, 2001 Unit: mm 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.3 3.0 +- 0.5 1.27 0.2 1.2 0.2 7.8 7.0 (1.5) 0.2 0.1 +- 0.1 2.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 10 1.7 7.8 6.6 1.3 0.15 0.3 10.0 +- 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 LDPAK (S)-(1) -- -- 1.3 g 2SJ549(L),2SJ549(S) As of January, 2001 Unit: mm (1.5) 7.8 7.0 1.7 7.8 6.6 1.3 0.2 0.3 10.0 +- 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 0.2 0.1 +- 0.1 2.2 1.2 0.2 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.3 5.0 +- 0.5 1.27 0.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (S)-(2) -- -- 1.35 g 11 2SJ549(L),2SJ549(S) Cautions 1. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 12