MUR1660CT
FEATURES
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
A=Anode, C=Cathode, TAB=Cathode
Symbol Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=100 C
IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Maximum Forward Voltage At 8.0A DCVF
IRMaximum DC Reverse Current
At Rated DC Blocking Voltage @TJ=25 C
@TJ=100 C
CJ
Typical Thermal Resistance (Note 3)
TRR Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance Per Element (Note 1)
TJ, TSTG Operating And Storage Temperature Range
Maximum Ratings
16
125
1.5
5
500
80
50
1.5
-55 to +150
A
A
V
Unit
uA
pF
ns
o
o
o
ROJC C/W
o
C
o
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
3. Thermal Resistance Junction To Case.
A
A
C
C(TAB)
A C A Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Dimensions TO-220AB
MUR1660CT
VRRM
VVRMS
VVDC
V
600 420 600
Ultra Fast Recovery Diodes
MUR1660CT
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60 Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
1 5 10 50 100220
0
25
50
75
100
125
150
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERE S
25
75 100 125 150
4
050
16
175
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.3 - TY PICAL REVERSE CHARACTERISTICS
INSTANTANEOUS
REVERSE CURRENT ,(uA)
20 40 120 140
0
.01
1.0
10.0
100.0
60 80 100
0.1 T
J
= 25 C
Single Half-Sine-Wave
(JEDEC METHOD)
12
0
8
RESI S TIVE OR INDUCTIVE LOA D
INSTANTANEOUS FO RWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERIST ICS
INSTANTANEOUS FO RWARD CURRENT ,(A)
0.2 0.4 1.2 1.4
1.0
10
100
0.6 0.8 1.0
0.1 1.8
1.6
PULSE WIDTH 300ua
INSTANTANEOUS FO RWARD VOLTAGE , VOLTS
INSTANTANEOUS FO RWARD CURRENT ,(A)
0
1.0
10
100
0.1
PULSE WIDTH 300us
2% Duty cycle
T
J
= 25 C
50-200V
FIG.5 - TYPICAL JUNCTI ON CAPACIT ANCE
CAPACITAN C E , ( pF)
REVERS E VOLTAGE , VO LTS
10
1100
1000
100
10 0.1
CASE TEMPERA TURE , C
T
J
= 125 C
T
J
= 100 C
T
J
= 125 C
300-400V
500-600V
50-400V
500-600V
4
T
J
= 25 C, f= 1MHz
T
J
= 75 C
Ultra Fast Recovery Diodes
