HITACHI 1.5.2 DIlI-Series DIl-Series MOSFETs are the second generation Dil-Series presents : products for Hitachi switching devices. These higher lyfsl between 2 & 3 times. devices incorporate built-in gate to source back * lower RDS(ON) between 30-50% based on to back zener diode protection to increased the same chip size then DI-Series. ESD ruggedness. Table 5 : Dil-Series Typical Characteristics Package Type Number Absolute Maximum Ratings Electrical Characteristics (typ.) N-Ch P-ch | vpss | vass w | Pens L_ Rosin) (2) lyfsl ton toff mim] a | om Cy] om | OM | oo (ns) 2SK1334 7SJ186 2.0 1 - 2su1 300 i 20 0.4 - LS 20 1 28 20 23 0. i 7 50 50 1 1 2SK1230 i TO-3P-FM Notes : * : Value at Tc = 25C 1 ** : Test conditions : Vpg> I pR pgiony IP p= /21 pmax (DC) {_]: Built in high speed diode version