INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
E
G
n-channel
C
VCES = 1200V
IC = 30A, TC = 100°C
VCE(on) typ. = 1.69V
Features
• Low VCE (ON) Trench IGBT Technology
• Low Switching Losses
• Square RBSOA
• 100% of the parts tested for 4X rated current (ILM)
• Positive VCE (ON) Temperature co-efficient
• Ultra-low VF Diode
• Tight parameter distribution
• Lead Free Package
Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low VCE(on), Low Switching Losses
and Ultra-low VF
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
G
C
E
Gate Collector Emitter
TO-247AC
IRG7PH42UD2PbF
TO-247AD
IRG7PH42UD2-EP
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 1200 V
I
C
@ T
C
= 25°C Continuous Collector Current 60
I
C
@ T
C
= 100°C Continuous Collector Current 30
ICM Pulse Collector Current, VGE=15V 90
ILM Clamped Inductive Load Current, VGE=20V
c
120
I
F
@ T
C
= 100°C Diode Continous Forward Current 10
IFSM Diode Non Repetitive Peak Surge Current @ TJ = 25°C
d
170
I
FM
Diode Peak Repetitive Forward Current
d
90
V
GE
Continuous Gate-to-Emitter Voltage ±30 V
P
D
@ T
C
= 25°C Maximum Power Dissipation 321
P
D
@ T
C
= 100°C Maximum Power Dissipation 128
T
J
Operating Junction and -55 to +150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.39
RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 0.82
RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 –––
A
W
°C
°C/W
E
G C
C
E
G C
C
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 20, 2014
IRG7PH42UD2PbF
IRG7PH42UD2-EP
Form
Quantity
IRG7PH42UD2PbF TO-247AC Tube 25 IRG7PH42UD2PbF
IRG7PH42UD2-EP
TO-247AD
Tube
25
IRG7PH42UD2-EP
Standard Pack
Base part number Package Type Orderable Part Number
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 20, 2014
IRG7PH42UD2PbF/IRG7PH42UD2-EP
Notes:
VCC = 80% (VCES), VGE = 20V, L = 200μH, RG = 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 100μA
e
CT4
V(BR)Transient Repetitive Transient Collector-to-Emitter Voltage — — 1300 V VGE = 0V, TJ=75°C, PW ≤ 10μs
ΔV(BR)CES/ΔTJTemperature Coeff. of Breakdown Voltage — 1.18 — V/°C VGE = 0V, IC = 1mA (25°C-150°C) CT4
—1.692.02 IC = 30A, VGE = 15V, TJ = 25°C 4,5,6
—2.07— IC = 30A, VGE = 15V, TJ = 150°C 8,9,10
VGE(th) Gate Threshold Voltage 3.0 — 6.0 V VCE = VGE, IC = 1.0mA 8,9
ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient — -15 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 150°C) 10,11
gfe Forward Transconductance — 32 — S VCE = 50V, IC = 30A, PW = 60μs
—1.0150 VGE = 0V, VCE = 1200V
— 450 1000 VGE = 0V, VCE = 1200V, TJ = 150°C
—1.081.24 IF = 10A 7
—1.01.15 IF = 10A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±30V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Ref.Fig
QgTotal Gate Charge (turn-on) — 156 234 IC = 30A 17
Qge Gate-to-Emitter Charge (turn-on) — 21 32 nC VGE = 15V CT1
Qgc Gate-to-Collector Charge (turn-on) — 69 104 VCC = 600V
IC = 30A, VCC = 600V, VGE = 15V
Eoff Turn-Off Switching Loss — 1320 1460 RG = 10
Ω
, L = 200μH,TJ = 25°C
Energy losses include tail
td(off) Turn-Off delay time — 233 292 IC = 30A, VCC = 600V, VGE = 15V
tfFall time — 64 85 RG = 10Ω, L = 200μH,TJ = 25°C
IC = 30A, VCC = 600V, VGE = 15V
Eoff Turn-Off Switching Loss — 2080 — μJRG = 10Ω, L = 200μH,TJ = 150°C CT3
Energy losses include tail
td(off) Turn-Off delay time — 297 — ns IC = 30A, VCC = 600V, VGE = 15V WF1
tfFall time — 173 — RG=10
Ω
, L=200μH, TJ = 150°C
Cies Input Capacitance — 3338 — VGE = 0V 16
Coes Output Capacitance — 124 — pF VCC = 30V
Cres Reverse Transfer Capacitance — 75 — f = 1.0Mhz
TJ = 150°C, IC = 120A 3
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 960V, Vp =1200V CT2
Rg = 10
Ω
, VGE = +15V to 0V
V
μJ
ns
VCE(on) Collector-to-Emitter Saturation Voltage
ICES Collector-to-Emitter Leakage Current
VFM Diode Forward Voltage Drop
CT3
Conditions
μA
V
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 20, 2014
IRG7PH42UD2PbF/IRG7PH42UD2-EP
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Reverse Bias SOA
TJ = 150°C; VGE =15V
Fig. 4 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80μs
025 50 75 100 125 150
TC (°C)
0
10
20
30
40
50
60
70
IC (A)
10 100 1000 10000
VCE (V)
1
10
100
1000
IC (A)
0246810
VCE (V)
0
20
40
60
80
100
120
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0246810
VCE (V)
0
20
40
60
80
100
120
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0246810
VCE (V)
0
20
40
60
80
100
120
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0 20 40 60 80 100 120 140 160
TC (°C)
0
50
100
150
200
250
300
350
Ptot (W)
4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 20, 2014
IRG7PH42UD2PbF/IRG7PH42UD2-EP
Fig. 7 - Typ. Diode Forward Voltage Drop
Characteristics
Fig. 8 - Typical VCE vs. VGE
TJ = -40°C
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C Fig. 10 - Typical VCE vs. VGE
TJ = 150°C
Fig. 11 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
Fig. 12 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 200μH; VCE = 600V, RG = 10Ω; VGE = 15V
5 101520
VGE (V)
0
2
4
6
8
10
12
14
VCE (V)
ICE = 15A
ICE = 30A
ICE = 60A
5101520
VGE (V)
0
2
4
6
8
10
12
14
VCE (V)
ICE = 15A
ICE = 30A
ICE = 60A
5101520
VGE (V)
0
2
4
6
8
10
12
14
VCE (V)
ICE = 15A
ICE = 30A
ICE = 60A
0 255075
IC (A)
1000
1500
2000
2500
3000
3500
4000
4500
Energy (μJ)
E
OFF
4 6 8 10 12
VGE, Gate-to-Emitter Voltage (V)
0
20
40
60
80
100
120
ICE, Collector-to-Emitter Current (A)
TJ = 25°C
TJ = 150°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VF (V)
0.1
1
10
100
1000
IF (A)
25°C
150°C
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 20, 2014
IRG7PH42UD2PbF/IRG7PH42UD2-EP
Fig. 17 - Typical Gate Charge vs. VGE
ICE = 30A; L = 600μH
Fig. 13 - Typ. Switching Time vs. IC
TJ = 150°C; L = 200μH; VCE = 600V, RG = 10Ω; VGE = 15V
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 200μH; VCE = 600V, ICE = 30A; VGE = 15V
Fig. 15 - Typ. Switching Time vs. RG
TJ = 150°C; L = 200μH; VCE = 600V, ICE = 30A; VGE = 15V
Fig. 16 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
0 25 50 75 100 125
Rg (Ω)
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
Energy (μJ)
E
OFF
0100 200 300 400 500 600
VCE (V)
1
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
0 25 50 75 100 125 150 175
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
VCES = 600V
VCES = 400V
010 20 30 40 50 60 70
IC (A)
100
1000
Swiching Time (ns)
tdOFF
tF
020 40 60 80 100 120
RG (Ω)
10
100
1000
10000
Swiching Time (ns)
tdOFF
tF
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 20, 2014
IRG7PH42UD2PbF/IRG7PH42UD2-EP
Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Fig. 19. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.1306 0.000313
0.1752 0.002056
0.0814 0.008349
0.0031 0.0431
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
Ci i/Ri
Ci= τi/Ri
τ
τC
τ4
τ4
R4
R4
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0..344 0.00112
0.328 0.003118
0.147 0.015806
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 20, 2014
IRG7PH42UD2PbF/IRG7PH42UD2-EP
1K
VC C
DUT
0
L
L
Rg
80 V DUT
480V
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - BVCES Filter Circuit
L
Rg
VCC
DIODE CLAMP /
DUT
DUT /
DRIVER
- 5V
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.3
-100
0
100
200
300
400
500
600
700
800
900
1000
-1 0 1 2
time(μs)
V
CE
(V)
-5
0
5
10
15
20
25
30
35
40
45
50
I
CE
(A)
90% I
CE
5%V
CE
10% I
CE
Eof f Lo s s
tf
8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 20, 2014
IRG7PH42UD2PbF/IRG7PH42UD2-EP
TO-247AC Part Marking Information
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
YEAR 1 = 2001
DAT E CODE
PART NUMBER
INTERNATIONAL
LOGO
RECTIFIER
AS S E MB L Y
56 57
IRFPE30
135H
LINE H
indi cates "L ead-F r ee" WE E K 35LOT CODE
IN THE ASSEMBLY LINE "H"
AS S E MB L E D ON WW 35, 2001
Note: "P" in assembly line position
EXAMPLE:
WIT H AS S E MB L Y
THIS IS AN IRFPE30
LOT CODE 5657
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 20, 2014
IRG7PH42UD2PbF/IRG7PH42UD2-EP
ASSEMBLY YEAR 0 = 2000
AS S EMBLED ON WW 35, 2000
IN THE ASSEMBLY LINE "H"
EXAMPLE: T HIS IS AN IRGP30B 120KD-E
LOT CODE 5657
WITH ASSEMBLY PART NUMBER
DAT E CODE
INTERNATIONAL
RECT IFIER
LOGO 035H
56 57
WEEK 35
LINE H
LOT CODE
Note: "P" in as s embly line pos ition
i ndi cates "L ead-F r ee"
TO-247AD Part Marking Information
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 20, 2014
IRG7PH42UD2PbF/IRG7PH42UD2-EP
Moisture Sensitivity Level TO- 247AC N/A
TO-247AD N/ A
RoHS Compliant
Qualification Information
†
Qualification Level
Industrial
†
(per JEDEC JESD47F)
††
Yes
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Date
Comments
•
Datasheet updated based on IR corporate template.
•
Removed “APPROVED (not released)” from top header on page 1.
Revision History
8/20/2014
