IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 2Mx18, 1Mx36 36Mb QUADP (Burst 2) Synchronous SRAM (2.0 CYCLE READ LATENCY) ADVANCED INFORMATION SEPTEMBER 2010 DESCRIPTION FEATURES 1Mx36 and 2Mx18 configuration available. On-chip Delay-Locked Loop (DLL) for wide data valid window. Separate independent read and write ports with concurrent read and write operations. Synchronous pipeline read with EARLY write operation. Double Data Rate (DDR) interface for read and write input ports. 2.0 Cycle read latency. Fixed 2-bit burst for read and write operations. Clock stop support. Two input clocks (K and K#) for address and control registering at rising edges only. Two echo clocks (CQ and CQ#) that are delivered simultaneously with data. Data valid pin (QVLD). +1.8V core power supply and 1.5, 1.8V VDDQ, used with 0.75, 0.9V VREF. HSTL input and output interface. Registered addresses, write and read controls, byte writes, data in, and data outputs. Full data coherency. Boundary scan using limited set of JTAG 1149.1 functions. Byte Write capability. Fine ball grid array (FBGA) package option: 13mmx15mm and 15mmx17mm body size 165-ball (11 x 15) array Programmable impedance output drivers via 5x user-supplied precision resistor. ODT (On Die Termination) feature is supported optionally on data input, K/K#, and BWx#. The end of top mark (A/A1/A2) is to define options. IS61QDP2B21M36A : No ODT IS61QDP2B21M36A1 : Option1 IS61QDP2B21M36A2 : Option2 Refer to more detail description at page 6 for each ODT option. The 36Mb IS61QDP2B21M36A/A1/A2 and IS61QDP2B22M18A/A1/A2 are synchronous, highperformance CMOS static random access memory (SRAM) devices. These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround. The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed. Refer to the Timing Reference Diagram for Truth Table for a description of the basic operations of these QUADP (Burst of 2) SRAMs. Read and write addresses are registered on alternating rising edges of the K clock. Read and write performed in double data rate. The following are registered internally on the rising edge of the K clock: Read address Read enable Write enable Data-in for early writes The following are registered on the rising edge of the K# clock: Write address Byte writes Data-in for second burst addresses Byte writes can change with the corresponding data-in to enable or disable writes on a per-byte basis. An internal write buffer enables the data-ins to be registered half a cycle earlier than the write address. The first data-in burst is clocked at the same time as the write command signal, and the second burst is timed to the following rising edge of the K# clock. During the burst read operation, the data-outs from the first bursts are updated from output registers of the second rising edge of the K# clock (starting two cycles later after read command). The data-outs from the second bursts are updated with the third rising edge of the K clock. The K and K# clocks are used to time the data-outs. The device is operated with a single +1.8V power supply and is compatible with HSTL I/O interface. Copyright (c) 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 1 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 Package ballout and description x36 FBGA Ball Configuration (Top View) 1 2 3 1 4 1 5 6 7 8 9 10 11 1 A CQ# NC/SA NC/SA W# BW2# K# BW1# R# SA NC/SA B Q27 Q18 D18 SA BW3# K BW0# SA D17 Q17 Q8 C D27 Q28 D19 VSS SA SA SA VSS D16 Q7 D8 D D28 D20 Q19 VSS VSS VSS VSS VSS Q16 D15 D7 E Q29 D29 Q20 VDDQ VSS VSS VSS VDDQ Q15 D6 Q6 F Q30 Q21 D21 VDDQ VDD VSS VDD VDDQ D14 Q14 Q5 CQ G D30 D22 Q22 VDDQ VDD VSS VDD VDDQ Q13 D13 D5 H Doff# VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J D31 Q31 D23 VDDQ VDD VSS VDD VDDQ D12 Q4 D4 K Q32 D32 Q23 VDDQ VDD VSS VDD VDDQ Q12 D3 Q3 L Q33 Q24 D24 VDDQ VSS VSS VSS VDDQ D11 Q11 Q2 M D33 Q34 D25 VSS VSS VSS VSS VSS D10 Q1 D2 N D34 D26 Q25 VSS SA SA SA VSS Q10 D9 D1 P Q35 D35 Q26 SA SA QVLD SA SA Q9 D0 Q0 TDO TCK SA SA SA ODT SA SA SA TMS TDI R Notes: 1. The following balls are reserved for higher densities: 3A for 72M, 10A for 144Mb, and 2A for 288Mb. x18 FBGA Ball Configuration (Top View) 1 2 3 1 4 5 6 A CQ# NC/SA B NC Q9 C NC NC D10 VSS SA SA D NC D11 Q10 VSS VSS VSS E NC NC Q11 VDDQ VSS VSS F NC Q12 D12 VDDQ VDD G NC D13 Q13 VDDQ H Doff# VREF VDDQ J NC NC D14 K NC NC L NC M 7 W# BW1# K# NC/SA D9 SA NC K BW0# 9 10 11 1 R# SA NC/SA SA NC NC Q8 SA VSS NC Q7 D8 VSS VSS NC NC D7 VSS VDDQ NC D6 Q6 VSS VDD VDDQ NC NC Q5 VDD VSS VDD VDDQ NC NC D5 VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ VDDQ VDD VSS VDD VDDQ NC Q4 D4 Q14 VDDQ VDD VSS VDD VDDQ NC D3 Q3 Q15 D15 VDDQ VSS VSS VSS VDDQ NC NC Q2 NC NC D16 VSS VSS VSS VSS VSS NC Q1 D2 N NC D17 Q16 VSS SA SA SA VSS NC NC D1 P NC NC Q17 SA SA QVLD SA SA NC D0 Q0 TDO TCK SA SA SA ODT SA SA SA TMS TDI R SA 8 1 CQ Notes: 1. The following balls are reserved for higher densities: 10A for 72M, 2A for 144Mb, and 7A for 288Mb. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 2 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 Ball Description Symbol Type K, K# Input CQ, CQ# Output Doff# Input QVLD Output SA Input D0 - Dn Input Q0 - Qn Output W# Input R# Input BWx# Input Description Input clock: This input clock pair registers address and control inputs on the rising edge of K, and registers data on the rising edge of K and the rising edge of K#. K# is ideally 180 degrees out of phase with K. All synchronous inputs must meet setup and hold times around the clock rising edges. These balls cannot remain VREF level. Synchronous echo clock outputs: The edges of these outputs are tightly matched to the synchronous data outputs and can be used as a data valid indication. These signals are free running clocks and do not stop when Q tri-states. DLL disable and reset input : when low, this input causes the DLL to be bypassed and reset the previous DLL information. When high, DLL will start operating and lock the frequency after tCK lock time. The device behaves in one clock read latency mode when the DLL is turned off. In this mode, the device can be operated at a frequency of up to 167 MHz. Valid output indicator: The Q Valid indicates valid output data. QVLD is edge aligned with CQ and CQ#. Synchronous address inputs: These inputs are registered and must meet the setup and hold times around the rising edge of K. These inputs are ignored when device is deselected. Synchronous data inputs: Input data must meet setup and hold times around the rising edges of K and K# during WRITE operations. See BALL CONFIGURATION figures for ball site location of individual signals. The x18 device uses D0~D17. D18~D35 should be treated as NC pin. The x36 device uses D0~D35. Synchronous data outputs: Output data is synchronized to the respective CQ and CQ#, or to the respective K and K# if C and /C are tied to high. This bus operates in response to R# commands. See BALL CONFIGURATION figures for ball site location of individual signals. The x18 device uses Q0~Q17. Q18~Q35 should be treated as NC pin. The x36 device uses Q0~Q35. Synchronous write: When low, this input causes the address inputs to be registered and a WRITE cycle to be initiated. This input must meet setup and hold times around the rising edge of K. Synchronous read: When low, this input causes the address inputs to be registered and a READ cycle to be initiated. This input must meet setup and hold times around the rising edge of K. Synchronous byte writes: When low, these inputs cause their respective byte to be registered and written during WRITE cycles. These signals are sampled on the same edge as the corresponding data and must meet setup and hold times around the rising edges of K and #K for each of the two rising edges comprising the WRITE cycle. See Write Truth Table for signal to data relationship. HSTL input reference voltage: Nominally VDDQ/2, but may be adjusted to improve system noise margin. Provides a reference voltage for the HSTL input buffers. Power supply: 1.8 V nominal. See DC Characteristics and Operating Conditions for range. VDD Input reference Power VDDQ Power Power supply: Isolated output buffer supply. Nominally 1.5 V. See DC Characteristics and Operating Conditions for range. VSS Ground Ground of the device VREF ZQ Input TMS, TDI, TCK Input TDO Output NC N/A ODT Input Output impedance matching input: This input is used to tune the device outputs to the system data bus impedance. Q and CQ output impedance are set to 0.2xRQ, where RQ is a resistor from this ball to ground. This ball can be connected directly to VDDQ, which enables the minimum impedance mode. This ball cannot be connected directly to VSS or left unconnected. In ODT (On Die Termination) enable devices, the ODT termination values tracks the value of RQ. The ODT range is selected by ODT control input. IEEE1149.1 test inputs: 1.8 V I/O levels. These balls may be left not connected if the JTAG function is not used in the circuit. IEEE1149.1 clock input: 1.8 V I/O levels. This ball must be tied to VSS if the JTAG function is not used in the circuit. No connect: These signals should be left floating or connected to ground to improve package heat dissipation. ODT control; Refer to SRAM features for the details. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 3 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 SRAM Features description Block Diagram 36 (18) Data Register D (Data-In) 72 (36) 72 (36) 72 (36) Write Driver R# W# BWx# 2M x 36 (4M x 18) Memory Array 72 (36) 72(36) QVLD 2 CQ, CQ# (Echo Clocks) Control Logic 4 (2) Output Register 36 (18) Output Driver 19 (20) 72 (36) Output Select Address Register Sense Amplifiers 36 (18) 20 (21) Address Decoder Address Q (Data-out) QVLD 2 CQ, CQ# (Echo Clocks) K K# Clock Generator Select Output Control Doff# Note: Numerical values in parentheses refer to the x18 device configuration. Read Operations The SRAM operates continuously in a burst-of-two mode. Read cycles are started by registering R# in active low state at the rising edge of the K clock. R# can be activated every other cycle because two full cycles are required to complete the burst of two in DDR mode. A set of free-running echo clocks, CQ and CQ#, are produced internally with timings identical to the data-outs. The echo clocks can be used as data capture clocks by the receiver device. The data corresponding to the first address is clocked two cycles later by the rising edge of the K clock. The data corresponding to the second burst is clocked three cycles later by the following rising edge of the K clock. A NOP operation (R# is high) does not terminate the previous read. Write Operations Write operations can also be initiated at every rising edge of the K clock with first data whenever W# is low. The write address is provided half cycle with second data later, registered by the rising edge of K#, so the write always occurs in bursts of two. The write data is provided in an `early write' mode; that is, the data-in corresponding to the first address of the burst, is presented half cycle before the rising edge of the following K clock. The data-in corresponding to the second write burst address follows next, registered by the rising edge of K#. The data-in provided for writing is initially kept in write buffers. The information in these buffers is written into the array on the third write cycle. A read cycle to the last write address produces data from the write buffers. Similarly, a read address followed by the same write address produces the latest write data. The SRAM maintains data coherency. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 4 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 During a write, the byte writes independently control which byte of any of the four burst addresses is written (see X18/X36 Write Truth Tables and Timing Reference Diagram for Truth Table). Whenever a write is disabled (W# is high at the rising edge of K), data is not written into the memory. RQ Programmable Impedance An external resistor, RQ, must be connected between the ZQ pin on the SRAM and VSS to enable the SRAM to adjust its output driver impedance. The value of RQ must be 5x the value of the intended line impedance driven by the SRAM. For example, an RQ of 250 results in a driver impedance of 50. The allowable range of RQ to guarantee impedance matching is between 175 and 350 at VDDQ=1.5V. The RQ resistor should be placed less than two inches away from the ZQ ball on the SRAM module. The capacitance of the loaded ZQ trace must be less than 7.5pF. The ZQ pin can also be directly connected to VDDQ to obtain a minimum impedance setting. ZQ must never be connected to VSS. Programmable Impedance and Power-Up Requirements Periodic readjustment of the output driver impedance is necessary as the impedance is greatly affected by drifts in supply voltage and temperature. During power-up, the driver impedance is in the middle of allowable impedances value. The final impedance value is achieved within 1024 clock cycles. Depth Expansion Separate input and output ports enable easy depth expansion, as each port can be selected and deselected independently. Read and write operations can occur simultaneously without affecting each other. Also, all pending read and write transactions are always completed prior to deselecting the corresponding port. Valid Data Indicator (QVLD) A data valid pin (QVLD) is available to assist in high-speed data output capture. This output signal is edge-aligned with the echo clock and is asserted HIGH half a cycle before valid read data is available and asserted LOW half a cycle before the final valid read data arrives. Delay Locked Loop (DLL) Delay Locked Loop (DLL) is a new system to align the output data coincident with clock rising or falling edge to enhance the output valid timing characteristics. It is locked to the clock frequency and is constantly adjusted to match the clock frequency. Therefore device can have stable output over the temperature and voltage variation. DLL has a limitation of locking range and jitter adjustment which are specified as tKHKH and tKCvar respectively in the AC timing characteristics. In order to turn this feature off, applying logic low to the Doff# pin will bypass this. In the DLL off mode, the device behaves with one clock cycle latency and a longer access time which is known in DDR-I or legacy QUAD mode. The DLL can also be reset without power down by toggling Doff# pin low to high or stopping the input clocks K and K# for a minimum of 30ns.(K and K# must be stayed either at higher than VIH or lower than VIL level. Remaining Vref is not permitted.) DLL reset must be issued when power up or when clock frequency changes abruptly. After DLL being reset, it gets locked after 2048 cycles of stable clock. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 5 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 ODT (On Die Termination) On Die Termination (ODT) is a feature that allows a SRAM to change input resistive termination condition by ODT pin which function can have three status, High, Low, and Floating. Each status can have different ODT termination value that tracks the value of RQ (Refer to the table of Fig1) and ODT of QUADP is always turned on during the read and write function after ODT level to connect with ODT resistor is forced. Fig1. Functional representation of ODT SRAM In/Out Buffer VDDQ VDDQ VDDQ ODT=L ODT=H R1x2 R2x2 ODT=Floating R3x2 PAD R1x2 R2x2 ODT=L ODT=H VSS Option13 Option24 VSS R1 0.3x RQ1 ODT disable R3x2 ODT=Floating VSS R2 0.6x RQ2 0.6x RQ2 R3 0.6x RQ2 ODT disable Notes 1. Allowable range of RQ to guarantee impedance matching a tolerance of 20% is 175<RQ<350. 2. Allowable range of RQ to guarantee impedance matching a tolerance of 20% is 175<RQ<250. 3. ODT control pin is connected to VDDQ through 3.5k. Therefore it is recommended to connect it to VSS through less than 100 to make it low. 4. ODT control pin is connected to VSS through 3.5k. Therefore it is recommended to connect it to VDDQ through less than 100 to make it high. ODT PIN For option1 case, low input level of ODT pin can select strong (RQ1) input termination range (175<RQ<350) and high input level of ODT pin can select weak (RQ2) input termination range (175<RQ<250) with K, K#, D0 to Dn, BWx# and if ODT pin is on floating condition, it set weak (RQ2) input termination range which ODT pin is connected by pull-up resistor internally. For option2 case, high input level of ODT pin can select weak (RQ2) input termination range (175<RQ<250) with D0 to Dn, BWx# and low input level or floating of ODT pin can select disable of the ODT function. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 6 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 Power-Up and Power-Down Sequences The recommendation of voltage apply sequence is : VDD VDDQ 1)VREF2) VIN Notes: 1) VDDQ can be applied concurrently with VDD. 2) VREF can be applied concurrently with VDDQ. After power and clock signals are stabilized, device can be ready for normal operation after tKC-Lock cycles. In tKClock cycle period, device initializes internal logics and locks DLL. Depending on /Doff status, locking DLL will be skipped. The following timing pictures are possible examples of power up sequence. Sequence1. /Doff is fixed low After tKC-lock cycle of stable clock, device is ready for normal operation. Power On stage Unstable Clock Period Stable Clock period Read to use K K# VDD >tKC-lock for device initialization VDDQ VREF VIN Note) All inputs including clocks must be either logically High or Low during Power On stage. Timing above shows only one of cases. Sequence2. /Doff is controlled and goes high after clock being stable. Power On stage Unstable Clock Period Stable Clock period Read to use K K# Doff# >tKC-lock for device initialization VDD VDDQ VREF VIN Note) All inputs including clocks must be either logically High or Low during Power On stage. Timing above shows only one of cases. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 7 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 Sequence3. /Doff is controlled but goes high before clock being stable. Because DLL has a risk to be locked with the unstable clock, DLL needs to be reset and locked with the stable input. a) K-stop to reset. If K or K# stays at VIH or VIL for more than 30nS, DLL will be reset and ready to re-lock. In tKCLock period, DLL will be locked with a new stable value. Device can be ready for normal operation after that. Power On stage Unstable Clock Period K-Stop Stable Clock period Read to use K K# Doff# >30nS >tKC-lock for device initialization VDD VDDQ VREF VIN Note) All inputs including clocks must be either logically High or Low during Power On stage. Timing above shows only one of cases. a) /Doff Low to reset. If /Doff toggled low to high, DLL will be reset and ready to re-lock. In tKC-Lock period, DLL will be locked with a new stable value. Device can be ready for normal operation after that. Power On stage Unstable Clock Period Doff reset DLL Stable Clock period Read to use K K# Doff# >tDoffLowToReset >tKC-lock for device initialization VDD VDDQ VREF VIN Note) Applying DLL reset sequences (sequence 3a, 3b) are also required when operating frequency is changed without power off. Note) All inputs including clocks must be either logically High or Low during Power On stage. Timing above shows only one of cases. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 8 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 Application Example Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 9 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 State Diagram Power-Up Read NOP Read# Read Read# Load New Read Address Always (fixed) Read DDR Read Write# Write NOP Write Load New Write Address Always (fixed) Write# Write DDR Write Notes: 1. Internal burst counter is fixed as two-bit linear; that is when first address is A0+0, next internal burst addresses are A0+1. 2. Read refers to read active status with R# = LOW. Read# refers to read inactive status with R# = HIGH. 3. Write refers to write active status with W# = LOW. Write# refers to write inactive status with W# = HIGH. 4. The read and write state machines can be active simultaneously. 5. State machine control timing sequence is controlled by K. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 10 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 Timing Reference Diagram for Truth Table The Timing Reference Diagram for Truth Table is helpful in understanding the Clock and Write Truth Tables, as it shows the cycle relationship between clocks, address, data in, data out, and control signals. Read command is issued at the beginning of cycle "t". Write command is issued at the beginning of cycle "t+1". Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 11 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 Clock Truth Table (Use the following table with the Timing Reference Diagram for Truth Table.) Clock Controls Data In Data Out Mode K R# W# DB DB+1 QA QA+1 Stop Clock Stop X X Previous State Previous State Previous State Previous State No Operation (NOP) LH H H X X High-Z High-Z Read A LH L X X X DOUT at K# (t+2.0) DOUT at K (t+2.5) Write B LH X L DIN at K (t) DIN at K# (t+0.5) X X Notes: 1. Internal burst counter is always fixed as two-bit. 2. X = "don't care"; H = logic "1"; L = logic "0". 3. A read operation is started when control signal R is active low 4. A write operation is started when control signal W is active low. 5. Before entering into stop clock, all pending read and write must be completed. 6. Consecutive read or write operations can be started only at every other K clock rising edge. If two read or write operations are issued in consecutive K clock rising edges, the second one will be ignored. 7. If both R# and W# are active low after a NOP operation, the write operation will be ignored. 8. For timing definitions, refer to the AC Timing Characteristics table. Signals must meet AC specifications at timings indicated in parenthesis with respect to switching clocks K, K#. x18 Write Truth Table (Use the following table with the Timing Reference Diagram for Truth Table.) Operation K (t) K# (t+0.5) BW0# BW1# DB Write Byte 0 LH L H D0-8 (t) Write Byte 1 LH H L D9-17 (t) Write All Bytes LH L L D0-17 (t) Abort Write LH H H Don't Care DB+1 Write Byte 0 LH L H D0-8 (t+0.5) Write Byte 1 LH H L D9-17 (t+0.5) Write All Bytes LH L L D0-17 (t+0.5) Abort Write LH H H Don't Care Notes: 1. Refer to the Timing Reference Diagram for Truth Table. Cycle time starts at n and is referenced to the K clock. 2. For all cases, W# needs to be active low during the rising edge of K occurring at time t. 3. For timing definitions refer to the AC Timing Characteristics table. Signals must meet AC specifications with respect to switching clocks K and K#. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 12 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 x36 Write Truth Table (Use the following table with the Timing Reference Diagram for Truth Table.) Operation K (t) K# (t+0.5) BW0# BW1# BW2# BW3# DB Write Byte 0 LH L H H H D0-8 (t) Write Byte 1 LH H L H H D9-17 (t) Write Byte 2 LH H H L H D18-26 (t) Write Byte 3 LH H H H L D27-35 (t) Write All Bytes LH L L L L D0-35 (t) Abort Write LH H H H H Don't Care DB+1 Write Byte 0 LH L H H H D0-8 (t+0.5) Write Byte 1 LH H L H H D9-17 (t+0.5) Write Byte 2 LH H H L H D18-26 (t+0.5) Write Byte 3 LH H H H L D27-35 (t+0.5) Write All Bytes LH L L L L D0-35 (t+0.5) Abort Write LH H H H H Don't Care Notes: 1. For all cases, W# needs to be active low during the rising edge of K occurring at time t. 2. For timing definitions refer to the AC Timing Characteristics table. Signals must meet AC specifications with respect to switching clocks K and K#. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 13 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 Electrical Specifications Absolute Maximum Ratings Parameter Symbol Min Max Units Power Supply Voltage VDD 0.5 2.9 V I/O Power Supply Voltage VDDQ 0.5 2.9 V DC Input Voltage VIN 0.5 VDD+0.3 V Data Out Voltage VDOUT 0.5 2.6 V Junction Temperature TJ - 110 C Storage Temperature TSTG 55 +125 C Note: Stresses greater than those listed in this table can cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this datasheet is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Operating Temperature Range Temperature Range Symbol Min Max Units Commercial TA 0 +70 C Industrial TA 40 +85 C DC Electrical Characteristics (Over the Operating Temperature Range, VDD=1.8V5%) Parameter x36 Average Power Supply Operating Current (IOUT=0, VIN=VIH or VIL ) x18 Average Power Supply Operating Current (IOUT=0, VIN=VIH or VIL ) Power Supply Standby Current (R#=VIH, W#=VIH. All other inputs=VIH or VIL, IIH=0) Input leakage current ( 0 VINVDDQ for all input balls except VREF, ZQ, TCK, TMS, TDI ball) Output leakage current (0 VOUT VDDQ for all output balls except TDO ball; Output must be disabled.) Output "high" level voltage (IOH=100uA, Nominal ZQ) Output "low" level voltage (IOH= 100uA, Nominal ZQ) Symbol IDD30 IDD33 IDD40 IDD30 IDD33 IDD40 ISB30 ISB33 ISB40 Min Max 1200 1100 1000 1150 1050 950 290 280 270 Units Notes mA 1, 2 mA 1, 2 mA 1,2 ILI 2 +2 A 3,4 ILO 2 +2 A VOH VOL VDDQ0.2 VSS VDDQ VSS+0.2 V V Notes: 1. IOUT = chip output current. 2. The numeric suffix indicates the part operating at speed, as indicated in AC Timing Characteristics table (that is, IDD25 indicates 2.5ns cycle time). 3. ODT must be disabled. 4. Balls with ODT and DOFF# do not follow this spec, ILI = 5uA. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 14 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 Recommended DC Operating Conditions (Over the Operating Temperature Range) Parameter Symbol Min Typical Max Units Notes Supply Voltage VDD 1.8-5% 1.8 1.8+5% V 1 Output Driver Supply Voltage VDDQ 1.4 1.5 VDD V 1 Input High Voltage VIH VREF+0.1 - VDDQ+0.2 V 1, 2 Input Low Voltage VIL -0.2 - VREF -0.1 V 1, 3 VREF 0.68 0.75 0.95 V 1, 5 VIN-CLK -0.2 - VDDQ+0.2 V 1, 4 Input Reference Voltage Clock Signal Voltage Notes: 1. All voltages are referenced to VSS. All VDD, VDDQ, and VSS pins must be connected. 2. VIH(max) AC = See 0vershoot and Undershoot Timings. 3. VIL(min) AC = See 0vershoot and Undershoot Timings. 4. VIN-CLK specifies the maximum allowable DC excursions of each clock (K and K#). 5. Peak-to-peak AC component superimposed on VREF may not exceed 5% of VREF. Overshoot and Undershoot Timings Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 15 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 Typical AC Input Characteristics Parameter Symbol Min AC Input Logic HIGH VIH (AC) VREF+0.2 AC Input Logic LOW VIL (AC) Clock Input Logic HIGH VIH-CLK (AC) Clock Input Logic LOW VIL-CLK (AC) Max VREF-0.2 VREF+0.2 VREF-0.2 Units Notes V 1, 2, 3, 4 V 1, 2, 3, 4 V 1, 2, 3 V 1, 2, 3 Notes: 1. The peak-to-peak AC component superimposed on VREF may not exceed 5% of the DC component of VREF. 2. Performance is a function of VIH and VIL levels to clock inputs. 3. See the AC Input Definition diagram. 4. See the AC Input Definition diagram. The signals should swing monotonically with no steps rail-to-rail with input signals never ringing back past VIH (AC) and VIL (AC) during the input setup and input hold window. VIH (AC) and VIL (AC) are used for timing purposes only. AC Input Definition K# VREF K VRAIL VIH(AC) Setup Time Hold Time VREF VIL(AC) V-RAIL PBGA Thermal Characteristics Parameter Symbol Rating Units RJA TBD C/W Thermal resistance from junction to pins RJB TBD C/W Thermal resistance from junction to case RJC TBD C/W Thermal resistance from junction to ambient (airflow = 1m/s) 1. Note: these parameters are guaranteed by design and tested by a sample basis only. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 16 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 Pin Capacitance Parameter Symbol Input or output capacitance except D and Q pins CIN ,CO D and Q capacitance (D0-Dx, Q0-Qx) CDQ Clocks Capacitance (K, K, C, C) CCLK 2. Test Condition TA = 25C, f = 1 MHz, VDD = 1.8V, VDDQ = 1.5V Max Units 5 pF 6 pF 4 pF Note: these parameters are guaranteed by design and tested by a sample basis only. Programmable Impedance Output Driver DC Electrical Characteristics (Over the Operating Temperature Range, VDD=1.8V5%, VDDQ=1.5V/1.8V) Parameter Symbol Min Max Units Notes Output Logic HIGH Voltage VOH VDDQ /2 -0.12 VDDQ /2 + 0.12 V 1, 3 Output Logic LOW Voltage VOL VDDQ /2 -0.12 VDDQ /2 + 0.12 V 2, 3 Notes: 1. For 175 RQ 350: VDDQ 2 | IOH | RQ 5 2. For 175 RQ 350: VDDQ 2 | IOL | RQ 5 3. Parameter Tested with RQ=250 and VDDQ=1.5V AC Test Conditions (Over the Operating Temperature Range, VDD=1.8V5%, VDDQ=1.5V/1.8V) Parameter Symbol Conditions Units VDDQ 1.5/1.8 V VIH VREF+0.5 V Input Logic LOW Voltage VIL VREF-0.5 V Input Reference Voltage VREF 0.75/0.9 V Input Rise Time TR 2 V/ns Input Fall Time TF Output Drive Power Supply Voltage Input Logic HIGH Voltage 2 V/ns Output Timing Reference Level VREF V Clock Reference Level VREF V Output Load Conditions Notes 1, 2 Notes: 1. See AC Test Loading. 2. Parameter Tested with RQ=250 and VDDQ=1.5V Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 17 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 AC Test Loading (a) Unless otherwise noted, AC test loading assume this condition. (b) tCHQZ and tCHQX1 are specified with 5pF load capacitance and measured when transition occurs 100mV from the steady state voltage. (c)TDO VREF 50 Output 50 20pF Test Comparator VREF Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 18 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 AC Timing Characteristics (Over the Operating Temperature Range, VDD=1.8V5%, VDDQ=1.5V/1.8V) Parameter Symbol 25 (400MHz) 30 (330MHz) 33 (300MHz) 40 (250MHz) Min Max Min Max Min Max Min Max 2.5 8.40 3.00 8.4 3.3 8.4 4.00 8.4 Units Notes Clock Clock Cycle Time (K, K#) tKHKH Clock Phase Jitter (K, K#) tKC var Clock High Time (K, K#) tKHKL 0.4 0.4 0.4 0.4 cycle Clock Low Time (K, K#) tKLKH 0.4 0.4 0.4 0.4 cycle 0.2 0.3 0.3 0.3 ns ns Clock to Clock# (K, K#) tKHK#H 1.13 1.35 1.50 1.80 ns DLL Lock Time (K) tKC lock 2048 2048 2048 2048 cycles tDoffLowToReset 5 30 5 30 5 30 ns tKCreset 5 30 Doff Low period to DLL reset K static to DLL reset 4 5 ns Output Times K, K# High to Output Valid K, K# High to Output Hold tCHQV tCHQX K, K# High to Echo Clock Valid tCHCQV K, K# High to Echo Clock Hold tCHCQX CQ, CQ# High to Output Valid tCQHQV CQ, CQ# High to Output Hold tCQHQX 0.45 -0.45 -0.45 0.45 -0.45 0.20 tCHQZ K, High to Output Low-Z tCHQX1 -0.45 tQVLD -0.20 Address valid to K rising edge tAVKH 0.40 R#,W# control inputs valid to K rising edge tIVKH 0.40 BWx# control inputs valid to K rising edge tIVKH2 0.28 Data-in valid to K, K# rising edge tDVKH K rising edge to address hold -0.45 0.30 0.45 -0.45 -0.20 0.30 ns ns ns 0.30 0.45 -0.20 0.45 -0.30 -0.45 0.20 ns -0.45 -0.30 0.45 0.45 -0.45 0.45 -0.45 -0.30 0.20 0.45 0.45 -0.45 -0.20 K, High to Output High-Z CQ, CQ# High to QVLD Valid 0.45 -0.20 6 ns 6 0.45 ns 0.20 ns -0.45 0.20 ns ns Setup Times 0.40 0.40 0.40 0.40 0.40 0.40 0.30 0.30 0.30 0.28 0.30 0.30 0.30 ns tKHAX 0.40 0.40 0.40 0.40 ns 2 K rising edge to R#,W# control inputs hold tKHIX 0.40 0.40 0.40 0.40 ns 2 K rising edge to BWx# control inputs hold tKHIX2 0.28 0.30 0.30 0.30 0.30 0.30 0.30 ns ns 2 ns 2 Hold Times K, K# rising edge to data-in hold tKHDX 0.28 ns ns Notes: 1. All address inputs must meet the specified setup and hold times for all latching clock edges. 2. Control signals are R#, W#, BW0#, BW1# and (BW2#, BW3# for x36) 3. To avoid bus contention, at a given voltage and temperature tCHQX1 is bigger than tCHQZ. The specs as shown do not imply bus contention because tCHQX1 is a MIN parameter that is worst case at totally different test conditions (0 C, 1.9V) than tCHQZ, which is a MAX parameter (worst case at 70 C, 1.7V) It is not possible for two SRAMs on the same board to be at such different voltage and temperature. 4. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge. 5. VDD slew rate must be less than 0.1V DC per 50ns for DLL lock retention. DLL lock time begins once VDD and input clock are stable. 6. The data sheet parameters reflect tester guard bands and test setup variations. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 19 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 READ, WRITE, AND NOP TIMING DIAGRAM 1 2 READ WRITE 3 4 5 READ WRITE READ WRITE WRITE A2 A3 A4 A5 A6 A7 B2-2 B4-1 B4-2 B6-1 B6-2 B7-1 B7-2 D4-1 D4-2 D6-1 D6-2 D7-1 D7-2 6 7 NOP tKHKH tKHKL K Clock tKHK#H K# Clock tAVKH Address (SA) tKHAX A1 tIVKH tKHIX tIVKH tKHIX R# W# BWx# B2-1 tDVKH Data-In (D) D2-1 tKHDX D2-2 tCHQX1 Data-Out (Q) Q1-1 tCHQV QVLD Q1-2 Q1-3 Q1-4 Q3-1 Q3-2 tCHQZ tCHQX tQVLD tQVLD tCQHQV tCQHQX tCHCQV CQ Clock CQ# Clock tCHCQX Undefined Don't Care Notes: 1. If address A1 = A2, data Q1-1 = D2-1 and data Q1-2 = D2-2. Write data is forwarded immediately as read results. 2. B2-1 and B2-2 refer to all BWx# byte controls for D2-1 and D2-2 respectively. 3. B4-1 and B4-2 refer to all BWx# byte controls for D4-1 and D4-2 respectively. 4. B6-1 and B6-2 refer to all BWx# byte controls for D6-1 and D6-2 respectively. 5. B7-1 and B7-2 refer to all BWx# byte controls for D7-1 and D7-2 respectively. 6. Outputs are disabled one cycle after a NOP. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 20 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 IEEE 1149.1 TAP and Boundary Scan The SRAM provides a limited set of JTAG functions to test the interconnection between SRAM I/Os and printed circuit board traces or other components. There is no multiplexer in the path from I/O pins to the RAM core. In conformance with IEEE Standard 1149.1, the SRAM contains a TAP controller, instruction register, boundary scan register, bypass register, and ID register. The TAP controller has a standard 16-state machine that resets internally on power-up. Therefore, a TRST signal is not required Disabling the JTAG feature The SRAM can operate without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW (VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be left disconnected. They may alternately be connected to VDD through a pull-up resistor. TDO should be left disconnected. On power-up, the device will come up in a reset state, which will not interfere with device operation. Test Access Port Signal List: 1. Test Clock (TCK) This signal uses VDD as a power supply. The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. 2. Test Mode Select (TMS) This signal uses VDD as a power supply. The TMS input is used to send commands to the TAP controller and is sampled on the rising edge of TCK. 3. Test Data-In (TDI) This signal uses VDD as a power supply. The TDI input is used to serially input test instructions and information into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. TDI is connected to the most significant bit (MSB) of any register. For more information regarding instruction register loading, please see the TAP Controller State Diagram. 4. Test Data-Out (TDO) This signal uses VDDQ as a power supply. The TDO output ball is used to serially clock test instructions and data out from the registers. The TDO output driver is only active during the Shift-IR and Shift-DR TAP controller states. In all other states, the TDO pin is in a High-Z state. The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register. For more information, please see the TAP Controller State Diagram. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 21 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 TAP Controller State and Block Diagram TAP Controller State Machine 1 Test Logic Reset 0 Run Test Idle 1 Select DR 1 Select IR 0 1 0 0 1 1 Capture DR 0 Capture IR 0 0 Shift DR 1 1 1 1 Exit1 DR Exit1 IR 0 0 0 Pause DR 0 Pause IR 1 1 Exit2 DR 0 Exit2 IR 1 0 1 Update DR 1 0 Shift IR Update IR 0 Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 1 0 22 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 Performing a TAP Reset A Reset is performed by forcing TMS HIGH (VDD) for five rising edges of TCK. RESET may be performed while the SRAM is operating and does not affect its operation. At power-up, the TAP is internally reset to ensure that TDO comes up in a high-Z state. TAP Registers Registers are connected between the TDI and TDO pins and allow data to be scanned into and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction registers. Data is serially loaded into the TDI pin on the rising edge of TCK and output on the TDO pin on the falling edge of TCK. 1. Instruction Register This register is loaded during the update-IR state of the TAP controller. At power-up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state as described in the previous section. When the TAP controller is in the capture-IR state, the two LSBs are loaded with a binary "01" pattern to allow for fault isolation of the board-level serial test data path. 2. Bypass Register The bypass register is a single-bit register that can be placed between the TDI and TDO balls. This allows data to be shifted through the SRAM with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. 3. Boundary Scan Register The boundary scan register is connected to all the input and bidirectional balls on the SRAM. Several balls are also included in the scan register to reserved balls. The boundary scan register is loaded with the contents of the SRAM Input and Output ring when the TAP controller is in the capture-DR state and is then placed between the TDI and TDO balls when the controller is moved to the shift-DR state. Each bit corresponds to one of the balls on the SRAM package. The MSB of the register is connected to TDI, and the LSB is connected to TDO. 4. Identification (ID) Register The ID register is loaded with a vendor-specific, 32-bit code during the capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the SRAM and can be shifted out when the TAP controller is in the shift-DR state. Scan Register Sizes Register Name Instruction Bypass ID Boundary Scan Bit Size 3 1 32 109 TAP Instruction Set Many instructions are possible with an eight-bit instruction register and all valid combinations are listed in the TAP Instruction Code Table. All other instruction codes that are not listed on this table are reserved and should not be used. Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted from the instruction register through the TDI and TDO pins. To execute an instruction once it is shifted in, the TAP controller must be moved into the Update-IR state. 1. EXTEST The EXTEST instruction allows circuitry external to the component package to be tested. Boundary-scan register cells at output balls are used to apply a test vector, while those at input balls capture test results. Typically, the first test vector to be applied using the EXTEST instruction will be shifted into the boundary scan register using the PRELOAD Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 23 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 instruction. Thus, during the update-IR state of EXTEST, the output driver is turned on, and the PRELOAD data is driven onto the output balls. 2. IDCODE The IDCODE instruction causes a vendor-specific, 32-bit code to be loaded into the instruction register. It also places the instruction register between the TDI and TDO balls and allows the IDCODE to be shifted out of the device when the TAP controller enters the shift-DR state. The IDCODE instruction is loaded into the instruction register upon powerup or whenever the TAP controller is given a test logic reset state. 3. SAMPLE Z If the SAMPLE-Z instruction is loaded in the instruction register, all SRAM outputs are forced to an inactive drive state (high-Z), moving the TAP controller into the capture-DR state loads the data in the SRAMs input into the boundary scan register, and the boundary scan register is connected between TDI and TDO when the TAP controller is moved to the shift-DR state. 4. SAMPLE/PRELOAD When the SAMPLE/PRELOAD instruction is loaded into the instruction register and the TAP controller is in the capture-DR state, a snapshot of data on the inputs and bidirectional balls is captured in the boundary scan register. The user must be aware that the TAP controller clock can only operate at a frequency up to 50 MHz, while the SRAM clock operates significantly faster. Because there is a large difference between the clock frequencies, it is possible that during the capture-DR state, an input or output will undergo a transition. The TAP may then try to capture a signal while in transition. This will not harm the device, but there is no guarantee as to the value that will be captured. Repeatable results may not be possible. To ensure that the boundary scan register will capture the correct value of a signal, the SRAM signal must be stabilized long enough to meet the TAP controller's capture setup plus hold time. The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/ PRELOAD instruction. If this is an issue, it is still possible to capture all other signals and simply ignore the value of the CK and CK# captured in the boundary scan register. Once the data is captured, it is possible to shift out the data by putting the TAP into the shift-DR state. This places the boundary scan register between the TDI and TDO balls. 6. BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a shift-DR state, the bypass register is placed between TDI and TDO. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. 7. PRIVATE Do not use these instructions. They are reserved for future use and engineering mode. JTAG DC Operating Characteristics (Over the Operating Temperature Range, VDD=1.8V5%) Parameter Symbol Min JTAG Input High Voltage VIH1 1.3 JTAG Input Low Voltage VIL1 -0.3 JTAG Output High Voltage VOH1 1.4 JTAG Output Low Voltage VOL1 JTAG Output High Voltage VOH2 1.6 JTAG Output Low Voltage VOL2 JTAG Input Leakage Current ILIJTAG -5 JTAG Output Leakage Current ILOJTAG -5 Max VDD+0.3 0.5 0.4 0.2 +5 +5 Units V V V V V V A A Notes |IOH1|=2mA IOL1=2mA |IOH2|=100uA IOL2=100uA 0 Vin VDD 0 Vout VDD Notes: 1. All voltages referenced to VSS (GND); All JTAG inputs and outputs are LVTTL-compatible. 2. In "EXTEST" mode and "SAMPLE" mode, VDDQ is nominally 1.5 V. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 24 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 JTAG AC Test Conditions (Over the Operating Temperature Range, VDD=1.8V5%, VDDQ=1.5V/1.8V) Parameter Symbol Input Pulse High Level VIH1 Input Pulse Low Level VIL1 Input Rise Time TR1 Input Fall Time TF1 Input and Output Timing Reference Level Conditions 1.3 0.5 1.0 1.0 0.9 Units V V ns ns V JTAG AC Characteristics (Over the Operating Temperature Range, VDD=1.8V5%, VDDQ=1.5V/1.8V) Parameter Symbol Min TCK cycle time tTHTH 50 TCK high pulse width tTHTL 20 TCK low pulse width tTLTH 20 TMS Setup tMVTH 5 TMS Hold tTHMX 5 TDI Setup tDVTH 5 TDI Hold tTHDX 5 TCK Low to Valid Data* tTLOV - Max - - - - - - - 10 Units ns ns ns ns ns ns ns ns Note: See AC Test Loading(c) JTAG Timing Diagram tTHTL tTHTH tTLTH TCK tMVTH tTHMX tDVTH tTHDX TMS TDI tTLOV TDO Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 25 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 Instruction Set Code Instruction TDO Output Notes 000 EXTEST Boundary Scan Register 2, 6 001 IDCODE 32-bit Identification Register 010 SAMPLE-Z Boundary Scan Register 1, 2 011 PRIVATE Do Not Use 5 100 SAMPLE(/PRELOAD) Boundary Scan Register 4 101 PRIVATE Do Not Use 5 110 PRIVATE Do Not Use 5 111 BYPASS Bypass Register 3 Notes: 1. Places Qs in high-Z in order to sample all input data, regardless of other SRAM inputs. 2. TDI is sampled as an input to the first ID register to allow for the serial shift of the external TDI data. 3. BYPASS register is initiated to VSS when BYPASS instruction is invoked. The BYPASS register also holds the last serially loaded TDI when exiting the shift-DR state. 4. SAMPLE instruction does not place Qs in high-Z. 5. This instruction is reserved. Invoking this instruction will cause improper SRAM functionality. 6. This EXTEST is not IEEE 1149.1-compliant. By default, it places Q in high-Z. If the internal register on the scan chain is set high, Q will be updated with information loaded via a previous SAMPLE instruction. The actual transfer occurs during the update IR state after EXTEST is loaded. The value of the internal register can be changed during SAMPLE and EXTEST only. ID Register Definition Revision Number (31:29) Part Configuration (28:12) JEDEC Code (11:1) Start Bit (0) 000 00DEF0WX01PQLB0S0 00011010101 1 Part Configuration Definition: 1. DEF = 010 for 36Mb 2. WX = 11 for x36, 10 for x18 3. P = 1 for II+(QUADP/DDR-IIP), 0 for II(QUAD/DDR-II) 4. Q = 1 for QUAD, 0 for DDR-II 5. L = 1 for RL=2.5, 0 for RL2.5 6. B = 1 for burst of 4, 0 for burst of 2 7. S = 1 for Separate I/O, 0 for Common I/O LIST OF IEEE 1149.1 STANDARD VIOLATIONS 7.2.1.b, e 7.7.1.a-f 10.1.1.b, e 10.7.1.a-d 6.1.1.d Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 26 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 Boundary Scan Exit Order ORDER 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Pin ID 6R 6P 6N 7P 7N 7R 8R 8P 9R 11P 10P 10N 9P 10M 11N 9M 9N 11L 11M 9L 10L 11K 10K 9J 9K 10J 11J 11H 10G 9G 11F 11G 9F 10F 11E 10E ORDER 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 Pin ID 10D 9E 10C 11D 9C 9D 11B 11C 9B 10B 11A 10A 9A 8B 7C 6C 8A 7A 7B 6B 6A 5B 5A 4A 5C 4B 3A 2A 1A 2B 3B 1C 1B 3D 3C 1D ORDER 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 Pin ID 2C 3E 2D 2E 1E 2F 3F 1G 1F 3G 2G 1H 1J 2J 3K 3J 2K 1K 2L 3L 1M 1L 3N 3M 1N 2M 3P 2N 2P 1P 3R 4R 4P 5P 5N 5R Internal Notes: 1. NC pins as defined on the FBGA Ball Assignments are read as "Don't Cares". 2. State of internal pin (#109) is loaded via JTAG Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 27 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 Ordering Information Commercial Range: 0C to +70C Speed 333 MHz 300 MHz 250 MHz Order Part No. IS61QDP2B21M36A-333M3 IS61QDP2B21M36A-333M3L IS61QDP2B22M18A-333M3 IS61QDP2B22M18A-333M3L IS61QDP2B21M36A-300M3 IS61QDP2B21M36A-300M3L IS61QDP2B22M18A-300M3 IS61QDP2B22M18A-300M3L IS61QDP2B21M36A-250M3 IS61QDP2B21M36A-250M3L IS61QDP2B22M18A-250M3 IS61QDP2B22M18A-250M3L Organization 1Mx36 1Mx36 2Mx18 2Mx18 1Mx36 1Mx36 2Mx18 2Mx18 1Mx36 1Mx36 2Mx18 2Mx18 Package 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free 165 FBGA (15x17 mm) 166 FBGA (15x17 mm), lead free 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free Organization 1Mx36 1Mx36 2Mx18 2Mx18 1Mx36 1Mx36 2Mx18 2Mx18 1Mx36 1Mx36 2Mx18 2Mx18 Package 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free 165 FBGA (13x15 mm) 166 FBGA (13x15 mm), lead free 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free Commercial Range: 0C to +70C Speed 333 MHz 300 MHz 250 MHz Order Part No. IS61QDP2B21M36A-333B4 IS61QDP2B21M36A-333B4L IS61QDP2B22M18A-333B4 IS61QDP2B22M18A-333B4L IS61QDP2B21M36A-300B4 IS61QDP2B21M36A-300B4L IS61QDP2B22M18A-300B4 IS61QDP2B22M18A-300B4L IS61QDP2B21M36A-250B4 IS61QDP2B21M36A-250B4L IS61QDP2B22M18A-250B4 IS61QDP2B22M18A-250B4L Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 28 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 Industrial Range: -40C to +85C Speed 333 MHz 300 MHz 250 MHz Order Part No. IS61QDP2B21M36A-333M3I IS61QDP2B21M36A-333M3LI IS61QDP2B22M18A-333M3I IS61QDP2B22M18A-333M3LI IS61QDP2B21M36A-300M3I IS61QDP2B21M36A-300M3LI IS61QDP2B22M18A-300M3I IS61QDP2B22M18A-300M3LI IS61QDP2B21M36A-250M3I IS61QDP2B21M36A-250M3LI IS61QDP2B22M18A-250M3I IS61QDP2B22M18A-250M3LI Organization 1Mx36 1Mx36 2Mx18 2Mx18 1Mx36 1Mx36 2Mx18 2Mx18 1Mx36 1Mx36 2Mx18 2Mx18 Package 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free Organization 1Mx36 1Mx36 2Mx18 2Mx18 1Mx36 1Mx36 2Mx18 2Mx18 1Mx36 1Mx36 2Mx18 2Mx18 Package 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free Industrial Range: -40C to +85C Speed 333 MHz 300 MHz 250 MHz Order Part No. IS61QDP2B21M36A-333B4I IS61QDP2B21M36A-333B4LI IS61QDP2B22M18A-333B4I IS61QDP2B22M18A-333B4LI IS61QDP2B21M36A-300B4I IS61QDP2B21M36A-300B4LI IS61QDP2B22M18A-300B4I IS61QDP2B22M18A-300B4LI IS61QDP2B21M36A-250B4I IS61QDP2B21M36A-250B4LI IS61QDP2B22M18A-250B4I IS61QDP2B22M18A-250B4LI Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 29 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 Package Outline 1. Controlling dimension : mm NOTE : 12/10/2007 Package drawing - 15x17x1.4 BGA 30 IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1/A2 Package drawing - 13x15x1.4 BGA Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 5/06/2010 31