Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G150SH6N
Dec. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Preliminary
Description
DA WIN ’ S I G B T 7DM-2 Package dev ices are opt imized t o reduce losses
and swit ching noise in high f requency power conditioning electr ica l sy st ems.
These I G BT modules are ideally suited for power inverters, motors drives
and ot her applications w here swit ching losses are s ignif icant portion of the
t ot a l losses.
Features
☞High Speed Switching
☞BVCES = 600V
☞Low Conduct ion Loss : VCE(sat) = 2. 1V (ty p. )
☞Fast & Soft Ant i-Paral lel FWD
☞Short circu it rated : Min. 10uS at TC=100℃
☞Reduced EM I and R FI
☞I solation Ty pe Package
Applications
Mot or Drives, High Power Inverters, Welding Machine, I nduction He ating,
UP S , CVC F, R obot ics , Servo Cont rols, High Speed SMP S
Absolu te M axi mu m Ratin g s@ Tj=25℃(Per Leg)
Symbol Parameter Ratings UnitConditions
1/7
Equiv alent Circu it
E qu ival en t Ci r cuit and Packag e
Package : 7DM-2 Series
Please see the package out line inf ormat ion
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
Tj
Tstg
Viso
TL
C o llec tor-E mitt e r V o lta g e
Gat e-Emitter Voltage
Collect or Current
Pulsed Collector Current
Diode Cont inuous Forward Current
Diode Maximum Forward Current
Short C ircuit Wit hst and T ime
Maximum Power Dissipation
Operat ing Junction Temperature
St orage Temperature Range
I solation Volt age
Maximum Lead Temp. for soldering
Purposes, 1/8”f rom case f or 9 seconds
Mount ing screw Torque :M6
Power terminals screw Torque :M5
600
±20
175
150
300
150
300
10
595
-40 ~ 150
-40 ~ 125
2500
260
4.0
2.0
V
V
A
A
A
A
A
uS
W
℃
℃
V
℃
N.m
N.m
-
-
Tc = 25℃
Tc =80℃
-
Tc = 100℃
-
Tc = 100℃
Tc = 25℃
-
-
AC 1 minute
-
-
High Power Lugge d Type IGBT Module
6
7
5
4
①②③
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G150SH6N
Dec. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Preliminary
2/7
E l ectr ical Char acteristi cs o f IGBT @ TC=25℃(unless otherwise specified)
Symbol Parameter Values Unit
Conditions Min. Typ. Max.
C - E B reakdown V oltage
Temperat ure Coeff. of
Breakdown Voltage
G - E t hreshold volt age
Colle ctor cutoff Current
G - E leakage Current
Colle ctor to Emitter
sat uration v oltage
Turn on delay time
Tu rn o n ris e time
Turn off delay tim e
Turn off fall time
Turn on Swit ching Loss
Turn off Switching Loss
Tot al Switching Loss
Short C ircuit Wit hst and T ime
Tot al Gat e Charge
Gat e-Emitter Charge
Gate-Collect or Charge
600
-
5.0
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
-
0.6
6.5
-
-
2.1
2.4
100
80
135
140
2.5
4.9
7.4
-
460
130
190
-
-
8.5
250
±100
2.9
-
-
-
-
250
-
-
-
-
-
-
-
V
V/℃
V
uA
nA
V
V
nS
nS
nS
nS
mJ
mJ
mJ
uS
nC
nC
nC
VGE = 0V , IC= 250uA
VGE = 0V , IC= 1.0m A
IC= 150mA , VCE = VGE
VGE = VGES, VCE = 0V
VGE = V GES, VCE = 0 V
IC=150A, VGE=15V @TC= 25 ℃
IC=150A, VGE=15V @TC=100℃
VCC = 300V , IC=150A
VGE = ±15V
RG= 2Ω
I nduct iv e Load, @ TC = 25℃
VCC = 300V, VGE = ±15V
@TC= 100℃
VCC = 300V
VGE =±15V
IC= 150A
BVCES
ΔBVCES/
ΔTJ
VGE(th)
ICES
IGES
VCE(sat)
td(on)
tr
td(off )
tf
Eon
Eoff
Ets
Tsc
Qg
Qge
Qgc
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G150SH6N
Dec. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Preliminary
3/7
E l ectr ical Char acteristi cs o f F RD @ TC=25℃(unless ot herwise specif ied )
Symbol Parameter Values UnitConditions Min. Typ. Max.
IF=150A
IF= 150A, VR=300V
di/ dt= -200A/ uS
Tc =25℃
Tc = 100℃
Tc =25℃
Tc = 100℃
Tc =25℃
Tc = 100℃
Tc =25℃
Tc = 100℃
Diode Forw ard Voltage
Diode Reverse
Recov ery Time
Diode Peak Reverse
Rec over y Cur r e nt
Diode Reverse
Recovery Charge
VFM
trr
Irr
Qrr
-
-
-
-
-
-
-
-
1.6
1.7
120
140
30
47
2400
3290
2.1
-
140
-
45
-
3150
-
V
nS
A
nC
Th ermal Character i stics and Wei g h t
Symbol Parameter Values UnitConditions Min. Typ. Max.
Junct ion-t o-Case(IG BT Part , Pe r 1/2 M odule)
Junct ion-t o-Case(DI O DE Part , Per 1/2 Module)
Case-t o-Sink ( Conduct iv e grease applied)
Weight of Module
℃/W
℃/W
℃/W
g
-
-
-
-
0.21
0.48
-
250
-
-
0.045
-
RθJC
RθJC
RθCS
Weight
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G150SH6N
Dec. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Preliminary
0
50
100
150
200
250
300
012345678
0
50
100
150
200
250
300
012 345 678
0
50
100
150
200
250
300
012345678
0
2
4
6
8
10
12
14
16
18
20
04 8121620
0
2
4
6
8
10
12
14
16
18
20
0 4 8 12 16 20
4/7
P erfor m an ce Cur ves
Collect or – Emitt er Voltage, VCE [V]
Coll e c to r Curr ent, I C[A]
Collect or – Emitt er Voltage, VCE [V]
Coll e c to r Curr ent, I C[A]
Collect or – Emitt er Voltage, VCE [V]
Coll e c to r Curr ent, I C[A]
Fig 1. Typical Output characteristics
Fig 3. Typical Saturation Voltage
characteristics Fig 4. Load Current vs. Frequency
Fig 5. Typical Saturation Voltage vs. VGE
Fig 2. Typical Output characteristics
Fig 6. Typical Saturation Voltage vs. VGE
20V
15V 12V
VGE= 10V
Comm on Emitter
Tc= 25℃
20V 15V 12V
VGE= 10V
Comm on Emitter
Tc= 125 ℃
Gate – Emitter Voltage, VGE [V]
Collect or – Emitt er Voltage, VCE [V]
C ommon E mitte r
TC=25℃
200A150A
IC=100A
C ommon E mitte r
TC=125℃
200A
150A
IC=100A
Gate – Emitter Voltage, VGE [V]
Collect or – Emitt er Voltage, VCE [V]
TC=125℃
TC=25℃
0
20
40
60
80
100
120
140
160
180
200
0.1 1 10 100 1000
Load Cu r r ent [A]
Frequen cy [KHz]
Du ty cycle = 5 0%
TC=125℃
Power Dissipation = 160W
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G150SH6N
Dec. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Preliminary
0
30
60
90
120
150
180
210
0 20 40 60 80 100 120 140 160
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
0 100 200 300 400 500 600 700
0. 001
0.01
0.1
1
1.E -05 1.E-04 1.E-03 1.E -02 1.E-01 1.E+00 1.E+01
IGBT :
DIODE :
TC=25℃
5/7
Fig 7. Gate Charge Characteristics Fig 8. Transient Thermal Impedance
Coll e c to r Curr ent, I C[A]
Collect or-Emit t er Voltage, VCE [V]
Fig 9. RBSOA Characteristic
Collect or-Emit t er Voltage, VCE [V]
Fig 10. SCSOA Characteristic
Coll e c to r Curr ent, I C[A]
Gate-Emitter Voltage ,VGE [V]
Gate Charge, Qg[nc] Rectangular Pulse Duration [sec]
Therma l Response Zt hjc [ /W ]
℃
Case T emper ature, T c [ ℃]
Coll e c to r Curr ent ,I c [ A ]
Fig 12. rated Current vs. Case Temperature
0
3
6
9
12
15
0 100 2 00 3 00 4 00 5 00
C ommon E mitte r
RL= 2Ω
TC= 25 ℃
Vcc=300V
1
10
100
1000
0 100 200 300 400 500 600 700
Single N on-re petitive
Pulse Tj≤125℃
VGE = 15V
RG= 2Ω
TJ≤150℃
VGE ≥15V
0.1
1
10
100
1000
0.1 1 10 100 1000
Single N on-re petitive
Pulse Tc= 25℃
Curves must be derated
linerarly with increase
In temperature
DC Oper at ion
1ms
100us
50us
Coll e c to r Curr ent, I C[A]
Collect or-Emit t er Voltage, VCE [V]
Fig11. SOA characteristics
I c M A X. ( P ulsed)
I c M A X. ( Continuous)
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G150SH6N
Dec. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Preliminary
0
50
100
150
200
250
300
01234
Fig 13. Power Dissipation vs. Case Temperature
Power Dis s ip a tion , PD[ W ]
Case T emper ature, T c [ ℃]Fig 14. Forward characteristics
Forwar d Drop Volt age, VF[V]
F orwa rd C urrent, IF[A]
TC=125℃
TC=25℃
6/7
0
100
200
300
400
500
600
0 20 40 60 80 100 120 140 160
TJ≤150℃
VGE ≥15V
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G150SH6N
Dec. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Preliminary
P ackage Ou t L ine In for mati o n
7/7
7DM-2
Dimensions in mm
4±0.3
13±0.3
48±0.5
11±0.5
M5 DP 9
Φ6.4±0.2
4576
1
23
23±0.5 23±0.5
80±0.5
94±0.5
4±0.3
14.0±0.5 14.0±0.5 14.0±0.5
21.7±0.5
22.0+2 . 0
-0. 6
MAX 31
6.0±0. 5
17.0±0.5
91.5±0.5
LABEL PLATE
9.1±0.5
1.0±0.5
6.0±0.5
48.0±0.5
6.8±0.5
19.0±0.5
45.5±0.5
