©2000 Fairchild Semiconductor International Rev. A, February 2000
KSB1151
PNP Epitaxial Silicon Transistor
Absolute Maximu m Rating s TC=25°C unless otherwise noted
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse test: PW≤350µs, Duty Cycle≤2% Pulsed
hFE Classifi cation
Symbol Parameter Value Units
VCBO Collector-Base Voltage - 60 V
VCEO Collector-Emitter Voltage - 60 V
VEBO Emitter-Base Voltage - 7 V
IC Collector Current (DC) - 5 A
ICP *Collector Current (Pulse) - 8 A
IB Base Current - 1 A
PC Collector Dissipation (Ta=25°C) 1.3 W
PC Collector Dissipation (TC=25°C) 20 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB = - 50V, IE = 0 - 10 µA
IEBO Em itter Cut-off Current VEB = - 7V, IC = 0 - 10 µA
hFE1
hFE2
hFE3
* DC Current Gain VCE = - 1V, IC = - 0.1A
VCE = - 1V, IC = - 2A
VCE = - 2V, IC = - 5A
60
100
50 200 400
VCE(sat) * Collector-Emitter Sat uration Voltage IC = - 2A, IB = - 0.2A - 0.14 - 0.3 V
VBE(sat) * Base-Emi tter Saturation Voltage IC = - 2A, IB = - 0.2A - 0.9 - 1.2 V
tON Turn ON Time VCC = - 10V, IC = - 2A
IB1 = - IB2 =0.2A
RL = 5Ω
0.15 1 µs
tSTG St orage Time 0.78 2.5 µs
tF Fall Time 0.18 1 µs
Classification R O Y
hFE2 100 ~ 200 160 ~ 320 200 ~ 400
KSB1151
Feature
• Low Collector-Emitter Saturation Voltage
• Large Collector Current
• High Power Dissipation : PC=1.3W (Ta=25°C)
• Complement to KSD 1691
1TO-126
1. Emitter 2.Collector 3.Base
©2000 Fairchild Semiconductor International
KSB1151
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage Figure 4. Forward Bias Operating Area
Figure 5. Reverse Bias Safe Operating Area Figure 6. Derating Curve of Safe Operating Areas
-0.4 -0.8 -1.2 -1.6 -2.0
-0
-2
-4
-6
-8
-10
IB = -200m A
I
B
= -80mA
I
B
= -40mA
IB = -20mA
I
B
= -100mA
I
B
= -60mA
IB = -15 0mA
I
B
= -30mA
IB = -10mA
IB = 0
Ic[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0.01 -0.1 -1 -10
-1
-10
-100
-1000
VCE = -1V
VCE = -2V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.1 -1 -10
-0.01
-0.1
-1
-10 IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-1 -10 -100
-0.1
-1
-10
VCEO(MAX)
Ic(Pulse)MAX
2mS
s/b Limited
Ic(DC)MAX
200mS
10mS
Dissi pation Limite d
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-20 -40 -60 -80 -100
-0
-2
-4
-6
-8
-10
VCEO(SUS)
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
20
40
60
80
100
120
140
160
DISSIPATION LIMITED
s/b LIMITED
dT[%], Ic DERATING
TC[oC], CASE TEMPERATURE
©2000 Fairchild Semiconductor International
KSB1151
Rev. A, February 2000
Typical Characteristics (Continued)
Figure 7. Power Derating
25 50 75 100 125 150 175
0
5
10
15
20
25
30
PC[W], POWER DIS SIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
KSB1151
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2000 Fairchild Semiconductor International Rev. E
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
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Contents
Features | Product status/pricing/packaging
Features
● Low Collector-Emitter Saturation
Voltage
● Large Collector Current
● High Power Dissipation: PC=1.3W
(Ta=25°C)
● Complement to KSD1691
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Product status/pricing/packaging
Product Product status Pricing* Package type Leads Packing method
KSB1151YS Full Production $0.275 TO-126 3 BULK
KSB1151YSTSTU Full Production $0.275 TO-126 3 RAIL
KSB1151YSTU Full Production $0.275 TO-126 3 RAIL
KSB1151YSTSSTU Full Production $0.275 TO-126 3 RAIL
* 1,000 piece Budgetary Pricing
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