TGA2595-CP 27.5 - 31 GHz 8 W GaN Power Amplifier Product Description Qorvo's TGA2595-CP is a balanced Ka-Band power amplifier fabricated on Qorvo's QGaN15 0.15 um GaN on SiC process. The balanced configuration supports low return loss and improves robustness into non-ideal loads. Operating from 27.5 to 31 GHz, the TGA2595-CP achieves 39 dBm saturated output power with power-added efficiency of > 22 % and power gain of 21 dB. The TGA2595-CP is packaged in a 10-lead 15 x 15 mm bolt-down package with a Cu base for superior thermal management. To simply system integration, the TGA2595CP is fully matched to 50 ohms with integrated DC blocking capacitors on both I/O ports. The TGA2595-CP is ideally suited for both commercial and defense satellite communications. Lead free and RoHS compliant. Functional Block Diagram Product Features * * * * * * * * * Frequency Range: 27.5 - 31 GHz POUT: 39 dBm (PIN = 18 dBm) PAE: > 22 % (PIN = 18 dBm) Power Gain: 21 dB (PIN = 18 dBm) IM3 @ 30 dBm/Tone = -27 dBc IM5 @ 30 dBm/Tone = -46 dBc Bias: VD = +20 V, IDQ = 560 mA, VG = -2.5 V typical Package Dimensions: 15.2 x 15.2 x 5.2 mm Package base is pure Cu offering superior thermal management Applications 1 10 2 3 4 5 9 8 7 6 * Satellite Communications Ordering Information Data Sheet Rev. D February 27, 2019 Part No. Description TGA2595-CP 1095829 27.5 - 31 GHz 8 W GaN Power Amplifier TGA2595-CP Evaluation Board - 1 of 14 - www.qorvo.com TGA2595-CP 27.5 - 31 GHz 8 W GaN Power Amplifier Absolute Maximum Ratings Parameter Drain Voltage (VD) Gate Voltage Range (VG) Drain Current (ID) Gate Current (IG) Power Dissipation (PDISS), 85 C Input Power, CW, 50 , (PIN) Input Power, CW, VSWR 6:1, VD = +22 V, 85 C, (PIN) Channel Temperature (TCH) Soldering Temperature (30 Seconds) Storage Temperature Recommended Operating Conditions Value / Range Parameter Drain Voltage (VD) 29.5 V -5 to 0 V 2.8 A See plot at page 10 48 W 30 dBm Min Drain Current, (IDQ) Max Units V 560 mA Drain Current, RF (ID_Drive) See chart page 5 mA Gate Voltage Range (VG) -2 to -2.9 V Gate Current, RF (IG_Drive) See chart page 5 mA TBASE Range 25 dBm Typ. +20 -40 +85 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. 275 C 260 C -55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Operational Frequency Range Small Signal Gain Input Return Loss Output Return Loss Output Power (at PIN = 18 dBm) Power Added Efficiency (at PIN = 18 dBm) Power Gain (at PIN = 18 dBm) IM3 @ 30 dBm/Tone IM5 @ 30 dBm/Tone Output Power Temperature Coefficient (25 C to 85 C only) Recommended Operating Voltage Min Typ Max Units 27.5 - - - - - - - - - > 25 > 12 > 13 39 > 22 21 -27 -46 31 - - - - - - - - GHz dB dB dB dBm % dB dBc dBc - -0.01 - dBm/C - 20 22 V Test conditions unless otherwise noted: 25 C, VD = +20 V, IDQ = 560 mA, VG = -2.5 V typical. Data Sheet Rev. D February 27, 2019 - 2 of 14 - www.qorvo.com TGA2595-CP 27.5 - 31 GHz 8 W GaN Power Amplifier Typical Performance - Large Signal Conditions unless otherwise specified: VD = +20 V, IDQ = 560 mA, VG = -2.5 V typical, CW. Output Power vs. Freq. vs. VD 41 Output Power vs. Freq. vs. Temp. 41 Temp P = 25 dBm C in = 18 Pin = 18 dBm, Temp = 25 C 40 Output Power (dBm) Output Power (dBm) 40 39 20 V 22 V 38 37 36 39 38 -40 C 25 C 85 C 37 36 27 28 29 30 31 32 27 28 29 Frequency (GHz) Output Power vs. Input Power vs. Temp. 42 31 32 Output Power vs. Input Power vs. Freq. 42 Temp = 25 C Frequency = 29 GHz 38 38 34 34 Output Power (dBm) Output Power (dBm) 30 Frequency (GHz) 30 26 -40 C 25 C 22 85 C 18 30 26 27.5 GHz 29 GHz 22 31 GHz 18 14 14 -12 -8 -4 0 4 8 12 16 20 24 -12 -8 -4 Input Power (dBm) Output Power (dBm) 4 8 12 16 20 24 Input Power (dBm) Output Power vs. Input Power vs. IDQ 42 38 0 Frequency = 29 GHz, Temp = 25 C 34 30 26 280 mA 420 mA 22 560 mA 18 14 -12 -8 -4 0 4 8 12 16 20 24 Input Power (dBm) Data Sheet Rev. D February 27, 2019 - 3 of 14 - www.qorvo.com TGA2595-CP 27.5 - 31 GHz 8 W GaN Power Amplifier Typical Performance - Large Signal Conditions unless otherwise specified: VD = +20 V, IDQ = 560 mA, VG = -2.5 V typical, CW. PAE vs. Frequency vs. IDQ 28 Pin = 18 dBm, Temp = 25 C Pin = 18 dBm, Temp = 25 C 22.0 26 21.5 24 Gain (dB) Power Added Efficiency (%) Power Gain vs. Frequency vs. IDQ 22.5 280 mA 22 420 mA 560 mA 21.0 280 mA 20.5 420 mA 560 mA 20 20.0 18 19.5 16 19.0 27 28 29 30 31 32 27 28 29 Frequency (GHz) PAE vs. Freq. vs. Temp. 28 31 Pin = 18 dBm 22.0 26 21.5 Gain (dB) 24 22 20 -40 C 20.5 -40 C 25 C 85 C 18 21.0 20.0 25 C 85 C 19.5 16 19.0 27 28 29 30 31 32 27 28 29 Frequency (GHz) 30 31 32 Frequency (GHz) PAE vs. Input Power vs. Temp. 28 Power Gain vs. Input Power vs. Temp. 38 Frequency = 29 GHz Frequency = 29 GHz 24 34 20 30 Gain (dB) Power Added Efficiency (%) 32 Power Gain vs. Freq. vs. Temp. 22.5 Temp P = 25 dBm C in = 18 Power Added Efficiency (%) 30 Frequency (GHz) 16 12 -40 C -40 C 22 25 C 8 26 25 C 85 C 85 C 18 4 0 14 -12 -8 -4 0 4 8 12 16 20 24 -12 Input Power (dBm) Data Sheet Rev. D February 27, 2019 -8 -4 0 4 8 12 16 20 24 Input Power (dBm) - 4 of 14 - www.qorvo.com TGA2595-CP 27.5 - 31 GHz 8 W GaN Power Amplifier Typical Performance - Large Signal Conditions unless otherwise specified: VD = +20 V, IDQ = 560 mA, VG = -2.5 V typical, CW. Drain Current vs. Frequency vs. VD 2.0 1.9 Gate Current vs. Frequency vs. VD 7.5 Pin = 18 dBm, Temp = 25 C Pin = 18 dBm, Temp = 25 C 6.5 1.7 Gate Current (mA) Drain Current (A) 1.8 20 V 1.6 22 V 1.5 1.4 1.3 5.5 4.5 3.5 2.5 1.5 1.2 1.1 0.5 1.0 -0.5 27 28 29 30 31 32 20 V 22 V 27 28 29 Frequency (GHz) Drain Current vs. Freq. vs. Temp. 2.0 32 Gate Current vs. Freq. vs. Temp. 40 35 -40 C 1.8 30 Gate Current (mA) Drain Current (A) 31 Pin = 18 dBm 1.9 1.7 1.6 1.5 1.4 -40 C 1.3 25 C 85 C 25 20 15 25 C 5 1.1 0 1.0 -5 28 29 30 31 25 C 10 1.2 27 32 27 28 29 30 31 32 Frequency (GHz) Drain Current vs. Input Power vs. Temp. 2.2 85 C Pin = 18 dBm, IG current limit set to 35 mA Frequency (GHz) Gate Current vs. Input Power vs. Temp. 40 Frequency = 29 GHz Frequency = 29 GHz, IG current limit set to 35 mA 2.0 35 1.8 30 Gate Current (mA) Drain Current (A) 30 Frequency (GHz) 1.6 1.4 1.2 1.0 -40 C 0.8 25 C 20 15 -40 C 25 C 10 85 C 85 C 0.6 25 5 0.4 0 -12 -8 -4 0 4 8 12 16 20 24 -12 Input Power (dBm) Data Sheet Rev. D February 27, 2019 -8 -4 0 4 8 12 16 20 24 Input Power (dBm) - 5 of 14 - www.qorvo.com TGA2595-CP 27.5 - 31 GHz 8 W GaN Power Amplifier Performance Plots - Large Signal Conditions unless otherwise specified: VD = +20 V, IDQ = 560 mA, VG = -2.5 V typical, CW. AM-PM (Delta) vs. Output Power vs. Temp. 2 0 1 -2 0 +85 C +25 C -1 -2 -3 -4 AM-PM (Delta) vs. Output Power vs. Temp. 2 Freq. = 29 GHz Phase Delta (degrees) Phase Delta (degrees) 3 -5 -4 -6 +85 C -8 +25 C -10 -12 -14 Freq. = 29 GHz, IDQ = 280 mA -16 -6 -18 22 24 26 28 30 32 34 36 38 40 22 24 26 28 Output Power (dBm) AM-PM vs. Output Power vs. Temp. 32 34 36 38 40 AM-PM vs. Output Power vs. Temp. 15 Freq. = 29 GHz 10 -5 Phase (degrees) Phase (degrees) 0 30 Output Power (dBm) -10 -15 5 0 -5 +85 C +25 C +85 C -20 -10 +25 C Freq. = 29 GHz, IDQ = 280 mA -25 -15 22 24 26 28 30 32 34 36 38 40 22 24 26 28 Output Power (dBm) AM-PM vs. Frequency vs. PIN 180 32 34 36 38 40 AM-PM vs. Frequency vs. PIN 180 20 dBm Temp = 25 C 140 18 dBm 140 100 16 dBm 100 Phase (degrees) Phase (degrees) 30 Output Power (dBm) 0 dBm 60 20 -20 Temp = 25 C, IDQ = 280 mA 60 20 -20 -60 -60 -100 -100 18 dBm -140 -140 16 dBm -180 -180 20 dBm 0 dBm 26 28 30 32 34 26 Frequency (GHz) Data Sheet Rev. D February 27, 2019 28 30 32 34 Frequency (GHz) - 6 of 14 - www.qorvo.com TGA2595-CP 27.5 - 31 GHz 8 W GaN Power Amplifier Typical Performance - Linearity Conditions unless otherwise specified: VD = +20 V, IDQ = 560 mA, VG = -2.5 V typical, CW. IM3 vs. Output Power vs. Frequency -20 10 MHz Tone Spacing, Temp = 25 C -25 10 MHz Tone Spacing, Temp = 25 C -45 -30 -50 -35 29 GHz -45 27 GHz -55 27 GHz -40 IM5 (dBc) IM3 (dBc) IM5 vs. Output Power vs. Frequency -40 31 GHz -50 29 GHz -60 31 GHz -65 -70 -55 -60 -75 -65 -80 -70 -85 5 10 15 20 25 30 35 5 10 Output Power per Tone (dBm) IM3 vs. Output Power vs. Temp. -20 30 35 -50 -35 -55 -40 C -40 IM5 (dBc) IM3 (dBc) 25 10 MHz Tone Spacing, Freq = 29 GHz -45 -30 25 C -45 85 C -50 -40 C 25 C -60 85 C -65 -70 -55 -60 -75 -65 -80 -70 -85 5 10 15 20 25 30 35 5 10 Output Power per Tone (dBm) -30 20 25 30 35 IM5 vs. Output Power vs. IDQ -30 10 MHz Tone Spacing, Freq = 29 GHz, Temp = 25 C -25 15 Output Power per Tone (dBm) IM3 vs. Output Power vs. IDQ -20 10 MHz Tone Spacing, Freq = 29 GHz, Temp = 25 C -35 -40 -45 -35 280 mA 420 mA 560 mA -40 -45 IM5 (dBc) IM3 (dBc) 20 IM5 vs. Output Power vs. Temp. -40 10 MHz Tone Spacing, Freq = 29 GHz -25 15 Output Power per Tone (dBm) -50 -55 -50 280 mA 420 mA 560 mA -55 -60 -65 -70 -60 -75 -65 -80 -70 -85 5 10 15 20 25 30 35 5 Output Power per Tone (dBm) Data Sheet Rev. D February 27, 2019 10 15 20 25 30 35 Output Power per Tone (dBm) - 7 of 14 - www.qorvo.com TGA2595-CP 27.5 - 31 GHz 8 W GaN Power Amplifier Typical Performance - Small Signal Conditions unless otherwise specified: VD = +20 V, IDQ = 560 mA, VG = -2.5 V typical, CW. Gain vs. Frequency vs. Temperature 40 Gain vs. Frequency vs. Drain Current 32 38 30 36 28 32 S21 (dB) S21 (dB) 34 30 28 26 26 24 22 24 -40 C 280 mA 20 25 C 22 420 mA 85 C 560 mA 20 18 27 28 29 30 31 27 28 Frequency (GHz) IRL vs. Frequency vs. Temperature -5 -5 -10 -10 -15 -20 31 -15 -20 -40 C -25 280 mA -25 25 C 420 mA 85 C 560 mA -30 -30 27 28 29 30 31 27 28 Frequency (GHz) 29 30 ORL vs. Frequency vs. Drain Current 0 -5 -10 -10 S22 (dB) -5 -15 -20 -15 280 mA -20 420 mA 560 mA -40 C -25 31 Frequency (GHz) ORL vs. Frequency vs. Temperature 0 S22 (dB) 30 IRL vs. Frequency vs. Drain Current 0 S11 (dB) S11 (dB) 0 29 Frequency (GHz) -25 25 C 85 C -30 -30 27 28 29 30 31 27 Frequency (GHz) Data Sheet Rev. D February 27, 2019 28 29 30 31 Frequency (GHz) - 8 of 14 - www.qorvo.com TGA2595-CP 27.5 - 31 GHz 8 W GaN Power Amplifier Thermal and Reliability Information Parameter Test Conditions Thermal Resistance (JC) (1) Channel Temperature (TCH) (Quiescent) (2) Thermal Resistance (JC) (1) Channel Temperature (TCH) (under RF) (2) Thermal Resistance (JC) (1) Channel Temperature (TCH) (RF drive) (2) Notes: 1. 2. Value Units CW, VD = +20 V, IDQ = 560 mA, TBASE = 85 C PDISS =11.2 W 2.23 C/W 110 C VD = +20 V, IDQ = 280 mA, TBASE = 85 C, Freq = 30 GHz, PIN = 18 dBm, POUT = 37.2 dBm, PDISS = 21.7 W, ID_Drive = 1.38 A 2.40 C/W 137 C VD = +20 V, IDQ = 560 mA, TBASE = 85 C, Freq = 30 GHz, PIN = 18 dBm, POUT = 38.3 dBm, PDISS = 24.9 W, ID_Drive = 1.58 A 2.45 C/W 146 C Thermal resistance is referenced to the back of package (85 C) Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates Dissipated Power and Maximum Gate Current Ig_max vs. TCH Maximum Gate Current (mA) 160 140 120 100 80 60 40 20 0 120 130 140 150 160 170 180 190 200 210 220 230 Channel Temperature (C) Dissipated Power vs. Freq. vs. Temp. 30 29 Pin = 18 dBm, T = 85 C 25 24 28 23 27 22 26 PDISS (W) PDISS (W) Dissipated Power vs. Freq. vs. IDQ 26 Pin = 18 dBm 25 24 23 21 20 19 280 mA 18 -40 C 22 21 560 mA 17 25 C 16 85 C 15 20 27 28 29 30 31 32 Data Sheet Rev. D February 27, 2019 27 28 29 30 31 32 Frequency (GHz) Frequency (GHz) - 9 of 14 - www.qorvo.com TGA2595-CP 27.5 - 31 GHz 8 W GaN Power Amplifier Applications Information and Pin Layout C3 10 uF Vg C2 0.1 uF C11 0.1 uF 10 1 2 RF IN 3 9 8 RF OUT 7 6 4 5 C6 10 uF C12 10 uF C5 0.1 uF C8 0.1 uF Bias Up Procedure Vd C9 10 uF Bias Down Procedure 1. Set ID limit to 2 A, IG limit to 35 mA 2. Apply -5 V to VG 3. Apply +20 V to VD; ensure IDQ is approx. 0 mA 4. Adjust VG until IDQ = 560 mA (VG ~ -2.5 V Typ.). 5. Turn on RF supply 1. Turn off RF supply 2. Reduce VG to -5 V; ensure IDQ is approx. 0 mA 3. Set VD to 0 V 4. Turn off VD supply 5. Turn off VG supply Pin Description Pad No. Symbol 1,5 VG 3 2,4,7,9 RFIN GND 6,10 VD 8 RFOUT Data Sheet Rev. D February 27, 2019 Description Gate Voltage; Bias network is required; must be biased from both sides; see recommended Application Information above. Input; matched to 50 ; DC blocked Must be grounded on the PCB. Drain voltage; Bias network is required; must be biased from both sides; see recommended Application Information above. Output; matched to 50 ; DC blocked - 10 of 14 - www.qorvo.com TGA2595-CP 27.5 - 31 GHz 8 W GaN Power Amplifier Assembly Drawing Vg VD GND GND C12 C11 C3 C2 C5 C6 C8 C9 GND GND Vg VD PCB NOTES: (1) Both Top and Bottom Vd and Vg must be biased. (2) This PCB is non-standard, and requires PCB trace modification for 30 GHz performance optimization. See Gerber files for detailed information. Bill of Materials Reference Des. C2, C5, C8, C11 C3, C6, C9, C12 (1) Value 0.1 F 10 F Description Cap, 0603, +50 V, 10 %, X7R Cap, 1206, +50 V, 20 %, X5R Manuf. Various Various Part Number - - Notes: 1. Capacitors in drain path should be removed for pulsed operation. Data Sheet Rev. D February 27, 2019 - 11 of 14 - www.qorvo.com TGA2595-CP 27.5 - 31 GHz 8 W GaN Power Amplifier Assembly Notes 1. Carefully clean the PC board and package leads with alcohol. Allow it to dry fully. 2. To improve the thermal and RF performance, Qorvo recommends attaching a heat sink to the bottom of the PCB and apply thermal compound (Arctic Silver 5 recommended) or 4 mil indium shim between the heat sink and the package. 3. (The following is for information only. There are many variables in a second level assembly that Qorvo does not control, so Qorvo does not recommend an absolute torque value.) Use screws to attach the component to the heat sink. A suggested torque value is 16 in-oz. for a 0-80 screw. Start with screws finger tight, then torque to 8 in-oz., then torque to final value. Use the following tightening pattern: 4. Apply no-flux solder to each pin of the TGA2595-CP. The component leads should be manually soldered, and the package cannot be subjected to conventional reflow processes. The use of no-clean solder to avoid washing after soldering is recommended. Data Sheet Rev. D February 27, 2019 - 12 of 14 - www.qorvo.com TGA2595-CP 27.5 - 31 GHz 8 W GaN Power Amplifier Mechanical Information and Marking Units: inches Tolerances unless specified: x.xxx = 0.005 Materials: Base: Copper Lead: Alloy 194 Lid: Plastic All metalized features are gold plated Part is epoxy sealed Marking: 2595: Part number YY: Part Assembly year WW: Part Assembly week ZZZ: Serial Number MXXX: Batch ID Data Sheet Rev. D February 27, 2019 - 13 of 14 - www.qorvo.com TGA2595-CP 27.5 - 31 GHz 8 W GaN Power Amplifier Handling Precautions Parameter Rating Standard ESD - Human Body Model (HBM) Class 1A ANSI/ESD/JEDEC JS-001 ESD - Charge Device Model (CDM) Class C2 JESD22-C101 MSL - Moisture Sensitivity Level N/A Caution! ESD-Sensitive Device Blank, null, no content Solderability Compatible with the latest version of J-STD-020, Lead-free solder, 260 C RoHS Compliance This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following attributes: * Lead Free * Halogen Free (Chlorine, Bromine) * Antimony Free * TBBP-A (C15H12Br402) Free * PFOS Free * SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Web: www.qorvo.com Tel: 1-844-890-8163 Email: customer.support@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 2019 (c) Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc. Data Sheet Rev. D February 27, 2019 - 14 of 14 - www.qorvo.com