TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Data Sheet Rev. D February 27, 2019
- 1 of 14 -
www.qorvo.com
Product Description
Qorvo’s TGA2595-CP is a balanced Ka-Band power
amplifier fabricated on Qorvo’s QGaN15 0.15 um GaN on
SiC process. The balanced configuration supports low
return loss and improves robustness into non-ideal loads.
Operating from 27.5 to 31 GHz, the TGA2595-CP achieves
39 dBm saturated output power with power-added
efficiency of > 22 % and power gain of 21 dB.
The TGA2595-CP is packaged in a 10-lead 15 x 15 mm
bolt-down package with a Cu base for superior thermal
management. To simply system integration, the TGA2595-
CP is fully matched to 50 ohms with integrated DC blocking
capacitors on both I/O ports.
The TGA2595-CP is ideally suited for both commercial and
defense satellite communications.
Lead free and RoHS compliant.
Functional Block Diagram
Product Features
• Frequency Range: 27.5 – 31 GHz
• POUT: 39 dBm (PIN = 18 dBm)
• PAE: > 22 % (PIN = 18 dBm)
• Power Gain: 21 dB (PIN = 18 dBm)
• IM3 @ 30 dBm/Tone = −27 dBc
• IM5 @ 30 dBm/Tone = −46 dBc
• Bias: VD = +20 V, IDQ = 560 mA, VG = −2.5 V typical
• Package Dimensions: 15.2 x 15.2 x 5.2 mm
• Package base is pure Cu offering superior thermal
management
Applications
• Satellite Communications
Ordering Information
Part No.
TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
1095829
TGA2595-CP Evaluation Board
6
7
8
9
10
5
4
3
2
1
TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Data Sheet Rev. D February 27, 2019
- 2 of 14 -
www.qorvo.com
Absolute Maximum Ratings
Parameter
Value / Range
Drain Voltage (VD)
29.5 V
Gate Voltage Range (VG)
−5 to 0 V
Drain Current (ID)
2.8 A
Gate Current (IG)
See plot at page 10
Power Dissipation (PDISS), 85 °C
48 W
Input Power, CW, 50 Ω, (PIN)
30 dBm
Input Power, CW, VSWR 6:1,
VD = +22 V, 85 °C, (PIN)
25 dBm
Channel Temperature (TCH)
275 °C
Soldering Temperature
(30 Seconds)
260 °C
Storage Temperature
−55 to 150 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.
Recommended Operating Conditions
Parameter
Min
Typ.
Max
Units
Drain Voltage (VD)
+20
V
Drain Current, (IDQ)
560
mA
Drain Current, RF (ID_Drive)
See chart page 5
mA
Gate Voltage Range (VG)
−2 to -2.9
V
Gate Current, RF (IG_Drive)
See chart page 5
mA
TBASE Range
−40
+85
ºC
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Parameter
Min
Typ
Max
Units
Operational Frequency Range
27.5
–
31
GHz
Small Signal Gain
–
> 25
–
dB
Input Return Loss
–
> 12
–
dB
Output Return Loss
–
> 13
–
dB
Output Power (at PIN = 18 dBm)
–
39
–
dBm
Power Added Efficiency (at PIN = 18 dBm)
–
> 22
–
%
Power Gain (at PIN = 18 dBm)
–
21
–
dB
IM3 @ 30 dBm/Tone
–
−27
–
dBc
IM5 @ 30 dBm/Tone
–
−46
–
dBc
Output Power Temperature Coefficient
(25 °C to 85 °C only)
–
−0.01
–
dBm/°C
Recommended Operating Voltage
–
20
22
V
Test conditions unless otherwise noted: 25 °C, VD = +20 V, IDQ = 560 mA, VG = −2.5 V typical.
TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Data Sheet Rev. D February 27, 2019
- 3 of 14 -
www.qorvo.com
Typical Performance – Large Signal
Conditions unless otherwise specified: VD = +20 V, IDQ = 560 mA, VG = −2.5 V typical, CW.
36
37
38
39
40
41
27 28 29 30 31 32
Output Power (dBm)
Frequency (GHz)
Output Power vs. Freq. vs. VD
P
in
= 18 dBm,
Temp = 25 °C
20 V
22 V
36
37
38
39
40
41
27 28 29 30 31 32
Output Power (dBm)
Frequency (GHz)
Output Power vs. Freq. vs. Temp.
Temp = 25 °C
Pin = 18 dBm
25 °C
85 °C
-40 °C
14
18
22
26
30
34
38
42
-12 -8 -4 0 4 8 12 16 20 24
Output Power (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. Temp.
Frequency = 29 GHz
25 °C
85 °C
-40 °C
14
18
22
26
30
34
38
42
-12 -8 -4 0 4 8 12 16 20 24
Output Power (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. Freq.
Temp = 25 °CTemp = 25 °C
29 GHz
31 GHz
27.5 GHz
14
18
22
26
30
34
38
42
-12 -8 -4 0 4 8 12 16 20 24
Output Power (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. IDQ
Frequency = 29 GHz,
Temp = 25 °C
420 mA
560 mA
280 mA
TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Data Sheet Rev. D February 27, 2019
- 4 of 14 -
www.qorvo.com
Typical Performance – Large Signal
Conditions unless otherwise specified: VD = +20 V, IDQ = 560 mA, VG = −2.5 V typical, CW.
16
18
20
22
24
26
28
27 28 29 30 31 32
Power Added Efficiency (%)
Frequency (GHz)
PAE vs. Frequency vs. IDQ
P
in
= 18 dBm,
Temp = 25 °C
420 mA
560 mA
280 mA
19.0
19.5
20.0
20.5
21.0
21.5
22.0
22.5
27 28 29 30 31 32
Gain (dB)
Frequency (GHz)
Power Gain vs. Frequency vs. IDQ
P
in
= 18 dBm,
Temp = 25 °C
420 mA
560 mA
280 mA
16
18
20
22
24
26
28
27 28 29 30 31 32
Power Added Efficiency (%)
Frequency (GHz)
PAE vs. Freq. vs. Temp.
Temp = 25 °C
Pin = 18 dBm
25 °C
85 °C
-40 °C
19.0
19.5
20.0
20.5
21.0
21.5
22.0
22.5
27 28 29 30 31 32
Gain (dB)
Frequency (GHz)
Power Gain vs. Freq. vs. Temp.
Pin = 18 dBm
25 °C
85 °C
-40 °C
0
4
8
12
16
20
24
28
-12 -8 -4 0 4 8 12 16 20 24
Power Added Efficiency (%)
Input Power (dBm)
PAE vs. Input Power vs. Temp.
Frequency = 29 GHz
25 °C
85 °C
-40 °C
14
18
22
26
30
34
38
-12 -8 -4 0 4 8 12 16 20 24
Gain (dB)
Input Power (dBm)
Power Gain vs. Input Power vs. Temp.
Frequency = 29 GHz
25 °C
85 °C
-40 °C
TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Data Sheet Rev. D February 27, 2019
- 5 of 14 -
www.qorvo.com
Typical Performance – Large Signal
Conditions unless otherwise specified: VD = +20 V, IDQ = 560 mA, VG = −2.5 V typical, CW.
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
27 28 29 30 31 32
Drain Current (A)
Frequency (GHz)
Drain Current vs. Frequency vs. VD
P
in
= 18 dBm,
Temp = 25 °C
20 V
22 V
-0.5
0.5
1.5
2.5
3.5
4.5
5.5
6.5
7.5
27 28 29 30 31 32
Gate Current (mA)
Frequency (GHz)
Gate Current vs. Frequency vs. VD
P
in
= 18 dBm,
Temp = 25 °C
20 V
22 V
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
27 28 29 30 31 32
Drain Current (A)
Frequency (GHz)
Drain Current vs. Freq. vs. Temp.
Pin = 18 dBm
25 °C
85 °C
-40 °C
-5
0
5
10
15
20
25
30
35
40
27 28 29 30 31 32
Gate Current (mA)
Frequency (GHz)
Gate Current vs. Freq. vs. Temp.
Pin = 18 dBm, IGcurrent limit set to 35 mA
25 °C
85 °C
-40 °C
25 °C
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-12 -8 -4 0 4 8 12 16 20 24
Drain Current (A)
Input Power (dBm)
Drain Current vs. Input Power vs. Temp.
Frequency = 29 GHz
25 °C
85 °C
-40 °C
0
5
10
15
20
25
30
35
40
-12 -8 -4 0 4 8 12 16 20 24
Gate Current (mA)
Input Power (dBm)
Gate Current vs. Input Power vs. Temp.
Frequency = 29 GHz, IGcurrent limit set to 35 mA
25 °C
85 °C
-40 °C
TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Data Sheet Rev. D February 27, 2019
- 6 of 14 -
www.qorvo.com
Performance Plots – Large Signal
Conditions unless otherwise specified: VD = +20 V, IDQ = 560 mA, VG = −2.5 V typical, CW.
-6
-5
-4
-3
-2
-1
0
1
2
3
22 24 26 28 30 32 34 36 38 40
Phase Delta (degrees)
Output Power (dBm)
AM-PM (Delta) vs. Output Power vs. Temp.
Freq. = 29 GHz
+85 °C
+25 °C
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2
22 24 26 28 30 32 34 36 38 40
Phase Delta (degrees)
Output Power (dBm)
AM-PM (Delta) vs. Output Power vs. Temp.
Freq. = 29 GHz,
IDQ = 280 mA
+85 °C
+25 °C
-25
-20
-15
-10
-5
0
22 24 26 28 30 32 34 36 38 40
Phase (degrees)
Output Power (dBm)
AM-PM vs. Output Power vs. Temp.
Freq. = 29 GHz
+85 °C
+25 °C
-15
-10
-5
0
5
10
15
22 24 26 28 30 32 34 36 38 40
Phase (degrees)
Output Power (dBm)
AM-PM vs. Output Power vs. Temp.
Freq. = 29 GHz,
IDQ = 280 mA
+85 °C
+25 °C
-180
-140
-100
-60
-20
20
60
100
140
180
26 28 30 32 34
Phase (degrees)
Frequency (GHz)
AM-PM vs. Frequency vs. PIN
Temp = 25 °C
20 dBm
18 dBm
16 dBm
0 dBm
-180
-140
-100
-60
-20
20
60
100
140
180
26 28 30 32 34
Phase (degrees)
Frequency (GHz)
AM-PM vs. Frequency vs. PIN
Temp = 25 °C,
IDQ = 280 mA
20 dBm
18 dBm
16 dBm
0 dBm
TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Data Sheet Rev. D February 27, 2019
- 7 of 14 -
www.qorvo.com
Typical Performance – Linearity
Conditions unless otherwise specified: VD = +20 V, IDQ = 560 mA, VG = −2.5 V typical, CW.
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
510 15 20 25 30 35
IM3 (dBc)
Output Power per Tone (dBm)
IM3 vs. Output Power vs. Frequency
10 MHz Tone Spacing, Temp = 25 °C
29 GHz
31 GHz
27 GHz
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
510 15 20 25 30 35
IM5 (dBc)
Output Power per Tone (dBm)
IM5 vs. Output Power vs. Frequency
10 MHz Tone Spacing, Temp = 25 °C
29 GHz
31 GHz
27 GHz
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
510 15 20 25 30 35
IM3 (dBc)
Output Power per Tone (dBm)
IM3 vs. Output Power vs. Temp.
10 MHz Tone Spacing,
Freq = 29 GHz
25 °C
85 °C
-40 °C
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
510 15 20 25 30 35
IM5 (dBc)
Output Power per Tone (dBm)
IM5 vs. Output Power vs. Temp.
25 °C
85 °C
-40 °C
10 MHz Tone Spacing,
Freq = 29 GHz
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
510 15 20 25 30 35
IM3 (dBc)
Output Power per Tone (dBm)
IM3 vs. Output Power vs. IDQ
10 MHz Tone Spacing,
Freq = 29 GHz,
Temp = 25 °C
560 mA
420 mA
280 mA
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
510 15 20 25 30 35
IM5 (dBc)
Output Power per Tone (dBm)
IM5 vs. Output Power vs. IDQ
560 mA
420 mA
280 mA
10 MHz Tone Spacing,
Freq = 29 GHz,
Temp = 25 °C
TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Data Sheet Rev. D February 27, 2019
- 8 of 14 -
www.qorvo.com
Typical Performance – Small Signal
Conditions unless otherwise specified: VD = +20 V, IDQ = 560 mA, VG = −2.5 V typical, CW.
20
22
24
26
28
30
32
34
36
38
40
27 28 29 30 31
S21 (dB)
Frequency (GHz)
Gain vs. Frequency vs. Temperature
-40 °C
25 °C
85 °C
18
20
22
24
26
28
30
32
27 28 29 30 31
S21 (dB)
Frequency (GHz)
Gain vs. Frequency vs. Drain Current
420 mA
560 mA
280 mA
-30
-25
-20
-15
-10
-5
0
27 28 29 30 31
S11 (dB)
Frequency (GHz)
IRL vs. Frequency vs. Temperature
-40 °C
25 °C
85 °C
-30
-25
-20
-15
-10
-5
0
27 28 29 30 31
S11 (dB)
Frequency (GHz)
IRL vs. Frequency vs. Drain Current
420 mA
560 mA
280 mA
-30
-25
-20
-15
-10
-5
0
27 28 29 30 31
S22 (dB)
Frequency (GHz)
ORL vs. Frequency vs. Temperature
-40 °C
25 °C
85 °C
-30
-25
-20
-15
-10
-5
0
27 28 29 30 31
S22 (dB)
Frequency (GHz)
ORL vs. Frequency vs. Drain Current
420 mA
560 mA
280 mA
TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Data Sheet Rev. D February 27, 2019
- 9 of 14 -
www.qorvo.com
Thermal and Reliability Information
Parameter
Test Conditions
Value
Units
Thermal Resistance (θJC) (1)
CW, VD = +20 V, IDQ = 560 mA,
TBASE = 85 °C PDISS =11.2 W
2.23
°C/W
Channel Temperature (TCH) (Quiescent) (2)
110
°C
Thermal Resistance (θJC) (1)
VD = +20 V, IDQ = 280 mA, TBASE = 85 °C,
Freq = 30 GHz, PIN = 18 dBm, POUT = 37.2 dBm,
PDISS = 21.7 W, ID_Drive = 1.38 A
2.40
°C/W
Channel Temperature (TCH) (under RF) (2)
137
°C
Thermal Resistance (θJC) (1)
VD = +20 V, IDQ = 560 mA, TBASE = 85 °C,
Freq = 30 GHz, PIN = 18 dBm, POUT = 38.3 dBm,
PDISS = 24.9 W, ID_Drive = 1.58 A
2.45
°C/W
Channel Temperature (TCH) (RF drive) (2)
146
°C
Notes:
1. Thermal resistance is referenced to the back of package (85 °C)
2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Dissipated Power and Maximum Gate Current
0
20
40
60
80
100
120
140
160
120 130 140 150 160 170 180 190 200 210 220 230
Maximum Gate Current (mA)
Channel Temperature (°C)
Ig_max vs. TCH
20
21
22
23
24
25
26
27
28
29
30
27 28 29 30 31 32
PDISS (W)
Frequency (GHz)
Dissipated Power vs. Freq. vs. Temp.
Pin = 18 dBm
25 °C
85 °C
-40 °C
15
16
17
18
19
20
21
22
23
24
25
26
27 28 29 30 31 32
PDISS (W)
Frequency (GHz)
Dissipated Power vs. Freq. vs. IDQ
P
in
= 18 dBm,
T = 85 °C
560 mA
280 mA
TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Data Sheet Rev. D February 27, 2019
- 10 of 14 -
www.qorvo.com
Applications Information and Pin Layout
Bias Up Procedure
1. Set ID limit to 2 A, IG limit to 35 mA
2. Apply −5 V to VG
3. Apply +20 V to VD; ensure IDQ is approx. 0 mA
4. Adjust VG until IDQ = 560 mA (VG ~ −2.5 V Typ.).
5. Turn on RF supply
Bias Down Procedure
1. Turn off RF supply
2. Reduce VG to −5 V; ensure IDQ is approx. 0 mA
3. Set VD to 0 V
4. Turn off VD supply
5. Turn off VG supply
Pin Description
Pad No.
Symbol
Description
1,5
VG
Gate Voltage; Bias network is required; must be biased from both sides; see
recommended Application Information above.
3
RFIN
Input; matched to 50 Ω; DC blocked
2,4,7,9
GND
Must be grounded on the PCB.
6,10
VD
Drain voltage; Bias network is required; must be biased from both sides; see
recommended Application Information above.
8
RFOUT
Output; matched to 50 Ω; DC blocked
8 RF OUTRF IN 3 Vd
Vg
C3
10 uF
C6
10 uF
6
7
9
10
5
4
2
1
C5
0.1 uF
C2
0.1 uF C12
10 uF
C11
0.1 uF
C8
0.1 uF C9
10 uF
TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Data Sheet Rev. D February 27, 2019
- 11 of 14 -
www.qorvo.com
Assembly Drawing
PCB NOTES:
(1) Both Top and Bottom Vd and Vg must be biased.
(2) This PCB is non-standard, and requires PCB trace modification for 30 GHz performance optimization. See Gerber
files for detailed information.
Bill of Materials
Reference Des.
Value
Description
Manuf.
Part Number
C2, C5, C8, C11
0.1 μF
Cap, 0603, +50 V, 10 %, X7R
Various
–
C3, C6, C9, C12 (1)
10 μF
Cap, 1206, +50 V, 20 %, X5R
Various
–
Notes:
1. Capacitors in drain path should be removed for pulsed operation.
Vg
GND
VD
Vg
GND
VD
GND
C3
C2
C5
C6 C8
C9
C11
C12
GND
TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Data Sheet Rev. D February 27, 2019
- 12 of 14 -
www.qorvo.com
Assembly Notes
1. Carefully clean the PC board and package leads with alcohol. Allow it to dry fully.
2. To improve the thermal and RF performance, Qorvo recommends attaching a heat sink to the bottom of the PCB and
apply thermal compound (Arctic Silver 5 recommended) or 4 mil indium shim between the heat sink and the
package.
3. (The following is for information only. There are many variables in a second level assembly that Qorvo does not
control, so Qorvo does not recommend an absolute torque value.) Use screws to attach the component to the heat
sink. A suggested torque value is 16 in-oz. for a 0-80 screw. Start with screws finger tight, then torque to 8 in-oz.,
then torque to final value. Use the following tightening pattern:
4. Apply no-flux solder to each pin of the TGA2595-CP. The component leads should be manually soldered, and the
package cannot be subjected to conventional reflow processes. The use of no-clean solder to avoid washing after
soldering is recommended.
TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Data Sheet Rev. D February 27, 2019
- 13 of 14 -
www.qorvo.com
Mechanical Information and Marking
Units: inches
Tolerances unless specified: x.xxx = ± 0.005
Materials:
Base: Copper
Lead: Alloy 194
Lid: Plastic
All metalized features are gold plated
Part is epoxy sealed
Marking:
2595: Part number
YY: Part Assembly year
WW: Part Assembly week
ZZZ: Serial Number
MXXX: Batch ID
TGA2595-CP
27.5 – 31 GHz 8 W GaN Power Amplifier
Data Sheet Rev. D February 27, 2019
- 14 of 14 -
www.qorvo.com
Handling Precautions
Parameter
Rating
Standard
Caution!
ESD-Sensitive Device
ESD – Human Body Model (HBM)
Class 1A
ANSI/ESD/JEDEC JS-001
ESD – Charge Device Model (CDM)
Class C2
JESD22-C101
MSL – Moisture Sensitivity Level
N/A
Blank, null, no content
Solderability
Compatible with the latest version of J-STD-020, Lead-free solder, 260 °C
RoHS Compliance
This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances
in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following
attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
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