COMCHIP SMD Sch ottky Bar rier Rect ifier s SMD Diodes Specialist CDBA220-G Thru. CDBA2100-G Reverse Voltage: 20 to 100 Volts Forward Current: 2.0 Amp RoHS Device Features DO-214AC (SMA) -Ideal for surface mount applications. -Easy pick and place. 0.180(4.57) 0.160(4.06) -Plastic package has Underwriters Lab. flammability classification 94V-0. 0.110(2.79) 0.086(2.18) 0.067(1.70) 0.051(1.29) -Built-in strain relief. -Low forward voltage drop. Mechanical data 0.209(5.31) 0.185(4.70) -Case: JEDEC DO-214AC, molded plastic. 0.012(0.31) 0.006(0.15) 0.091(2.31) 0.067(1.70) -Terminals: solderable per MIL-STD-750, method 2026. 0.059(1.50) 0.035(0.89) 0.008(0.20) 0.004(0.10) -Polarity: Color band denotes cathode end. -Approx. weight: 0.064 grams Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics Symbol CDBA 220-G CDBA 240-G CDBA 260-G CDBA 280-G CDBA 2100-G Units Max. repetitive peak reverse voltage V RRM 20 40 60 80 100 V Max. DC blocking voltage V DC 20 40 60 80 100 V Max. RMS voltage V RMS 14 28 42 56 70 V Peak surge forward current, 8.3ms single half sine-wave superimposed on rate load (JEDEC method) I FSM 50 A Max. average forward current IO 2.0 A Max. instantaneous forward voltage at 2.0A VF Max. DC reverse current at T A =25 OC rated DC blocking voltage T A =100 OC IR 0.5 10 RJA R JL 75 17 TJ 125 O C T STG -65 to +150 O C Parameter Max. thermal resistance (Note 1) Max. operating junction temperature Storage temperature 0.50 0.70 0.85 V mA O C/W Notes: 1. Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0x5.0 mm 2 copper pad area. REV:A Page 1 QW-BB006 Comchip Technology CO., LTD. COMCHIP SMD Sch ottky Bar rier Rect ifier s SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBA220-G thru CDBA2100-G) Fig.1 Reverse Characteristics Fig.2 Forward Characteristics 100 100 CDBA220-G~240-G CDBA260-G F o r w a rd C u rren t (A) R e v e r s e C u r rent (mA) 10 1 O T J =75 C 10 1 CDBA280-G~2100-G 0.1 0.1 O T J =25 C Pulse width 300S 4% duty cycle T J =25 OC 0.01 0 40 80 120 160 0.01 0.1 200 0.5 0.9 1.7 1.3 2.1 Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig.3 Junction Capacitance Fig.4 Current Derating Curve 350 2.8 O 250 200 1.6 CD BA 260 1.2 220 -G~ -G~ 0.8 210 240 100 2.0 BA 150 2.4 CD 0-G -G J u n c ti o n C apaci t ance (p F ) 300 Average Forward Current (A) T J =25 C f=1MHz and applied 4VDC reverse voltage 0.4 50 0 0.01 0 0.1 1 10 100 0 25 50 75 100 125 150 175 Ambient Temperature ( OC) Reverse Voltage (V) Fig.5 Non-repetitive Forward Surge Current P e a k F o r w a r d S u r g e Cur r e n t (A ) 60 O T J =25 C 8.3ms single half sine wave, JEDEC method 50 40 30 20 10 0 1 10 100 Number of Cycles at 60Hz REV:A Page 2 QW-BB006 Comchip Technology CO., LTD.