SMD Schottky Barrier Rect ifiers
Reverse Voltage: 20 to 100 Volts
Forward Current: 2.0 Amp
RoHS Device
Page 1
REV:A
Features
-Ideal for surface mount applications.
-Easy pick and place.
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
-Built-in strain relief.
-Low forward voltage drop.
Mechanical data
-Case: JEDEC DO-214AC, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.064 grams
CDBA220-G Thru. CDBA2100-G
Maximum Ratings and Electrical Characteristics
Dimensions in inches and (millimeter)
DO-214AC (SMA)
QW-BB006
CDBA
220-G
2
Notes: 1. Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0×5.0 mm copper pad area.
SMD Diodes Specialist
COMCHIP
Comchip Technology CO., LTD.
0.110(2.79)
0.086(2.18)
0.067(1.70)
0.051(1.29)
0.209(5.31)
0.185(4.70) 0.012(0.31)
0.006(0.15)
0.008(0.20)
0.004(0.10)
0.059(1.50)
0.035(0.89)
0.091(2.31)
0.067(1.70)
0.180(4.57)
0.160(4.06)
Max. repetitive peak reverse voltage
Max. DC blocking voltage
Max. RMS voltage
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
Max. average forward current
Max. instantaneous forward voltage at
2.0A
O
Max. DC reverse current at TA=25 C
O
rated DC blocking voltage TA=100 C
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
CDBA
240-G
CDBA
260-G
CDBA
280-G
CDBA
2100-G UnitsSymbolParameter
VRRM
VDC
VRMS
IFSM
IO
VF
IR
RθJA
RθJL
TJ
TSTG
20
20
14
40
40
28
60
60
42
50
2.0
0.70
0.5
10
75
17
125
-65 to +150
80
80
56
100
100
70
V
V
V
A
A
V
mA
OC/W
OC
OC
0.50 0.85
QW-BB006
RATING AND CHARACTERISTIC CURVES (CDBA220-G thru CDBA2100-G)
Percent of Rated Peak Reverse Voltage (%)
20012080 1600
Fig.1 Reverse Characteristics
0.01
0.1
1
10
100
Rvr e u rent (mA)
ee s C r
Forward Voltage (V)
0.1
Fig.2 Forward Characteristics
0.01
o w rd C rren (A)
F r a ut
0.1
1
10
100
0.9
Reverse Voltage (V)
0.01
Fig.3 Junction Capacitance
0
Jn ti n apaci ance (p )
u c o C t F
50
150
300
350
1 10 100
O
Ambient Temperature ( C)
Fig.4 Current Derating Curve
0
Average Forward Current (A)
1.2
1.6
2.8
SMD Diodes Specialist
COMCHIP
Comchip Technology CO., LTD.
Page 2
REV:A
1.3 2.1
100
200
250
0 100 175
0.4
2.4
40 0.5 1.7
0.8
SMD Schottky Barrier Rect ifiers
O
TJ=75 C
O
TJ=25 C
CDBA220-G~240-G
CDBA260-G
CDBA280-G~2100-G
O
TJ=25 C
Pulse width 300μS
4% duty cycle
0.1
O
TJ=25 C
f=1MHz and applied
4VDC reverse voltage
Number of Cycles at 60Hz
Fig.5 Non-repetitive Forward Surge Current
0
P a F r adu g Cur et )
e k o wr S r e r n(A
30
40
60
1 10 100
10
50
20
O
TJ=25 C
8.3ms single half sine
wave, JEDEC method
25 50 75 150125
2.0
CDBA220-G 2 0-G
~4
CBA260 G~2100-G
D -