AT28HC16/L Features Fast Read Access Time - 45ns Fast Byte Write - 1ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control DATA POLLING e Low Power 80mA Active Current 500A CMOS Standby Current (28HC16L) High Reliability CMOS Technology Endurance: 10 cycles Data Retention: 10 years 5 V+ 10% Supply CMOS & TTL Compatible Inputs and Outputs JEDEC Approved Byte-Wide Pinout Full Military, Commercial, and industrial Temperature Ranges Description The AT28HC16/16L is a high-speed, low-power Electrically Erasable and Programmable Read Only Memory. The device is optimized for high speed applications, featuring access times to 45ns. Its 16k of memory is organized as 2,048 words by 8 bits. The AT28HC16/16L comes in a space saving 24 pin DIP. The AT28HC16/16L is accessed like a static RAM for the read or write cycles without the need of external components. During a byte write, the address and data are latched internally, freeing the microprocessor address and data bus for other operations. Following the initiation of a write cycle, the device being written will go to a busy state and automatically clear and write the latched data using an internal control timer. Data polling of I/O7 may be used to detect the end of the write cycle. Once a write cycle has been completed, a new access for a read or a write may begin immediately. Atmels high-speed CMOS technology is used to achieve access times of 45ns for the AT28HC16 with under 440mW of power dissipation. The AT28HC16L offers ultra low standby power consumption of under 2.75mW at access time to 55ns. The AT28HC16/16L has additional features to ensure high quality and manufacturability. The device utilizes internal error correction for extended endurance and for improved data reten- tion characteristics. An extra 16 bytes of EPROM are available for device identification or tracking. Pin Configurations > Pin Name Function 3 AO - A10 Addresses CE Chip Enable 2 oe Output Enable 9 WE Write Enable (00 - 1/07 Data Inputs/Outputs NC No Connect AIMEL 16K (2K x 8) High Speed CMOS EPROM 2-59AIMET Block Diagram DATA INPUTS/OUTPUTS oun __~ V/O0 - VO7 _ tttititt cE __- OE,CE /*! DATALATCH AND WE WE Locic. _|__, | INPUT/OUTPUT cE - BUFFERS DE CODER __.| _ Y-GATING ADDRESS | x *| CELL MATRIX INPUTS DECODER IDENTIFICATION Operating Modes Mode CE OE WE Me) Read Vit VIL VIH DouT Write?) VIL ViK Vit DIN Standby/Write Inhibit Vin xl) X High Z Write Inhibit x x Vin Write Inhibit x Vit X Output Disable xX Vi xX High Z Chip Erase Vir Vu VIL High Z Notes: 1. X can be Vn. or Vin. 2. Refer to A.C. Programming Waveforms. Device Operation READ: The AT28HC16/16L is accessed like a Static RAM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The_outputs are put in a high impedance state whenever CE or OE is high. This dual line control gives desig- ners increased flexibility in preventing bus contention. BYTE WRITE: Writing data into the AT28HC16/16L. is similar to writing into a Static RAM, A low pulse on the WE or CE input with OE high and CE or WE low (respectively) in- itiates a byte write. The address location is latched on the last falling edge of WE (or CE); the new data is latched on the first rising edge. Internally, the device performs a self-clear before write. Once a byte write has been started, it will automatically time itself to completion. DATA POLLING: The AT28HC16/16L provides DATA POLLING to signal the completion of a write cycle. During a write cycle, an attempted read of the data being written results in the complement of that data for I/O7 (the other outputs are indeterminate). When the write cycle is finished, true data ap- pears on all outputs. 3. Vo = 12.0V 0.5V. WRITE PROTECTION: Inadvertent writes to the device are protected against in the following ways: (a) Vcc sense if Vcc is below 3.8V (typical) the write function is inhibited. (6) Vcc power on delay once Vcc has reached 3.8V the device will automatically time out Sms (typical) before_allowing_a byte write. (c) Write Inhibit holding any one of OE low, CE high or WE high inhibits byte write cycles. (d) Noise Protection a WE or CE pulse of less than 10ns (typical) will not initiate a write cycle. CHIP CLEAR: The contents of the entire memory of the AT28HC16/16L may be set to the high state by the CHIP CLEAR operation. By setting CE low and OE to 12 volts, the chip is cleared when a 10 msec low pulse is applied to WE. DEVICE IDENTIFICATION: In the AT28HC16/16L there are an extra 16 bytes of E2PROM memory available to the user for device identification. By raising A9 to 12 + 0.SV and using address locations 7FOH to 7FFH the additional bytes may be written to or read from in the same manner as the regular memory array. 2-60 AT28HC16/L summmeneneneeneeneeesees A 1 OSC 16/L Absolute Maximum Ratings* All Input Voltages (including N.C. Pins) All Output Voltages Voltage on OE and AQ Temperature Under Bias................. -55C to +125C Storage Temperature..............000 -65C to +150C with Respect to Ground ...........00 -0.6V to +6.25V with Respect to Ground .............. -0.6V to Vcc +0.6V with Respect to Ground .................. -0.6V to +13.5V D.C. and A.C. Operating Range *NOTICE: Stresses beyond those listed under Absolute Maxi- mum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. AT28HC16-70 AT28HC16-90 AT28HC16-45 AT28HCI6L-55 AT28HC16-55 AT28HC16L-70 AT28HC16L-90 Operating Com.| 0C- 70C 0C - 70C 0C - 70C 0C - 70C 0C - 70C Temperature nd. -40C - 85C -40C - 85C -40C - 85C -40C - 85C -40C - 85C (Case) Mil B5C-125C 55C -125C 55C - 125C 55C - 125C Vec Power Supply 5V410% 5VE10% 5V10% 5V410% 5V410% D.C. Characteristics Symbol Parameter Condition Min Max Units lu Input Load Current Vin=0V to Vcc + 1V 10 HA ILo Output Leakage Current Vvo=0V to Vcc 10 HA IsB1 Voc Standby Current CMOS CE=Vcc-0.3V to Vcc +1.0V. (AT28HC16L) 500 pA Iss2 | Vec Standby Current TTL = CE=2.0V to Voc + 1.0V AT26HC16L 3 mA AT28HC16 60 mA loc Vcc Active Current A.C. f=10MHz; louT=0mA 80 mA Vit Input Low Voltage 0.8 Vv VIH Input High Voltage 2.0 Vv Vot Output Low Voltage loL=12mA 4 v VoH Output High Voltage loH=-4.0MA 2.4 Vv Pin Capacitance (f=1MHz T=25C) Typ Max Units Conditions CIN 4 6 pF Vin = OV CouT 8 12 pF Vout = 0V 2-61AImEt A.C. Read Characteristics AT28HC16 | AT28HC16 AT28HC16L) AT28HC16 | AT28HC16L|AT28HC16L -45 -55 -55 -70 -70 -90 Symboi| Parameter Min Max | Min Max | Min) Max | Min) Max | Min Max | Min Max | Units Address to Output tacc Delay 45 55 55 70 70 90 ns tce |CE to Output Delay 30 40 55 50 70 90 | ns toe |6Eto Output Delay | 0 30] 0 40 40 0 50 0 50 0 50 ns first tor 5 |GEto Output Float | 0 301 0 40 4o!o 50/0 50] 0 50] ns Output Hold from OE or Address, 'OH whichever occurred | 0 9 0 0 0 ns A.C. Read Waveforms ADDRESS < ADDRESS VALID cE OE tACC iOH OUTPUT HIGH Z OUTPUT VALID oY Notes: 1. CL = 30pF. 4. tpr is specified from OE or CE whichever occurs first 2. CE may be delayed up to tacc - tc after the address transition without impact on tacc. 3. OE may be delayed up to tcx - tog after the falling edge of CE without impact on tcx or by tacc - tog after an address change without impact on tacc. Input Test Waveforms and Measurement Level 3.0V AC AC ORIVING 1.5V MEASUREMENT LEVELS LEVEL 0.0V tr, i < S5ns 2-62 AT28HC16/L (CL = 5pF). 5. This parameter is characterized and is not 100% tested. Output Test Load 5.0V OUTPUT PIN 200 T 30pFees AT 2811 C1 6/L A.C. Write Characteristics Symbol Parameter Min Typ Max Units tas, toes Address, OE Set-up Time 0 ns TAH Address Hold Time 50 ns twe Write Pulse Width 100 1000 ns tps Data Set-up Time 50 ns 1DH,tOEH Data, OE Hold Time 0 ns two Write Cycle Time 0.5 1.0 ms A.C. Write Waveforms- WE Controlled OE 4 NN ee ADDRESS K _ taS| tAH CE | tCH K __ tcS | WE NM, N |}~_ tWP t0S_J |b DATA IN two A.C. Write Waveforms- CE Controlled OE = N tOES tOEH ADDRESS < tAS | [|-tAH WE | tCH Lo _ ics || CE q KN }-~-_ WP. t0S_} |. tb DATA IN oo twc ANNEL 2-63Data Polling Characteristics Symbol Parameter Min Typ Max Units tbH Data Hold Time 0 ns toEH OE Hold Time 0 ns toe OE to Output Delay 100 ns twr Write Recovery Time 0 ns Note: 1. These parameters are characterized and not 100% tested. Data Polling Waveforms | Chip Erase Waveforms Vi CE ts = ty = Ipsec (min.) tw = 10msec (min.) viL Vu = 12.0V + 0.5V 2-64 AT28HC16/L. snmmeneeneneQon--B Fr 0OZ a0- Qean--HM9RZ 3702 a0- NORMALIZED SUPPLY CURRENT vs. 13 TEMPERATURE 1.22 14 \ 1.0 MAN ee 0.9 ps, ~ 08 pS -55 ~25 5 35 65 95 126 Temperature (C) NORMALIZED SUPPLY CURRENT vs. ADDRESS FREQUENCY 1.0 Vcc = 5V 09 T=25C ss 08 -a4 07 | LL 06 Qo 5 10 15 20 Frequency (MHz) QOn--MAnAOZ a0 AT28HC16/L NORMALIZED SUPPLY CURRENT vs. ts SUPPLY VOLTAGE 1.2 1.0 08 L_ | 06 4.50 4.75 5.00 5.25 550 Supply Voltage (V) 2-65 AIMELOrdering Information (Contact Factory: Not recommended for new designs.) tacc Ioc (mA) . Ordering Code Package Operation Range (ns) | Active | Standby 9 9 peral 9 45 80 60 AT28HC16N-45DC 24D3 Commercial AT28HC16-45DC 24D6 (0C to 70C) AT28HC16N-45PC 24P3 AT28HC16-45PC 24P6 AT28HC16N-45D1 24D3 Industrial AT28HC16-45DI 24D6 (-40C to 85C) AT28HC16N-45Pl 24P3 AT28HC16-45P1 24P6 55 80 60 AT28HC16N-55DC 24D3 Commercial AT28HC16-55DC 24D6 (0C to 70C) AT28HC16N-55PC 24P3 AT28HC16-55PC 24P6 AT28HC16N-55DI 24D3 Industrial AT28HC16-55DI 24D6 (-40C to 85C) AT28HC16N-55PI 24P3 AT28HC16-55Pl 24P6 AT28HC16N-55DM 24D3 Military AT28HC16-55DM 24D6 (-55C to 125C) AT28HC16N-55DM/883 24D3 Military AT28HC16-55DM/883 24D6 with Burn-in (-55C to 125C) 70 80 60 AT28HC16N-700C 24D3 Commercial AT28HC16-70DC 24D6 (0C to 70C) AT28HC16N-70PC 24P3 AT28HC16-70PC 24P6 AT28HC16N-70DI 24D3 Industrial AT28HC16-70DI 24D6 (-40C to 85C) AT28HC16N-70PI 24P3 AT28HC16-70PI 24P6 AT28HC16N-700M 24D3 Military AT28HC16-70DM 24D6 (-55C to 125C) AT28HC16N-70DM/883 24D3 Military AT28HC16-70DM/883 24D6 with Burn-in (-55C to 125C) 90 80 60 AT28HC16N-900C 24D3 Commercial AT28HC16-90DC 24D6 (0C to 70C) AT28HC16N-90PC 24P3 AT28HC16-90PC 24P6 AT28HC16N-90DI 24D3 Industrial AT28HC16-90DI 2406 (-40C to 85C) AT28HC16N-90PI 24P3 AT28HC16-90PI 24P6 2-66 AT28HC16/L cumpmDE ees A 1 S11 C1 6/1 Ordering Information (Contact Factory: Not recommended for new designs.) tacc icc (mA) Ordering Code Package Operation Range (ns) Active Standby g g P 9 90 80 60 AT28HC16N-S0DM 24D3 Military AT28HC16-90DM 24D6 (-55C to 125C) AT28HC16N-90DM/883 24D3 Military AT28HC16-90DM/883 24D6 with Burn-In (-55C to 125C) Package Type 24D3 24 Lead, 0.300" Wide, Non-Windowed, Ceramic Dual Inline Package (Cerdip) 24D6 24 Lead, 0.600" Wide, Non-Windowed, Ceramic Dual Inline Package (Cerdip) 24P3 24 Lead, 0.300" Wide, Plastic Dual Inline Package (PDIP) 24P6 24 Lead, 0.600" Wide, Plastic Dual Inline Package (PDIP) AIMEL 2-67AlmEt Ordering Information (Contact Factory: Not recommended for new designs.) tacc Ico (mA) Ordering Code Package Operation Range (ns) Active Standby ing o P 9 55 80 0.5 AT28HC16LN-55DC 24D3 Commerciat AT28HC16L-55DC 24D6 (0C to 70C) AT28HC16LN-55PC 24P3 AT28HC16L-55PC 24P6 AT28HC16LN-55D! 24D3 Industrial AT28HC16L-55D1 24D6 (-40C to 85C) AT28HC16LN-55PI 24P3 AT28HC16L-55PI 24P6 AT28HC16LN-55DM 24D3 Military AT28HC16L-55DM 24D6 (-55C to 125C) AT28HC16LN-55DM/883 24D3 Military AT28HC16L-55DM/883 24D6 with Burn-in (-55C to 125C) 70 80 0.5 AT28HC16LN-70DC 24D3 Commercial AT28HC16L-70DC 24D6 (0C to 70C) AT28HC16LN-70PC 24P3 AT28HC16L-70PC 24P6 AT28HC16LN-70DI 24D3 Industrial AT28HC16L-70DI 24D6 (-40C to 85C) AT28HC16LN-70PI 24P3 AT28HC16L-70PI 24P6 AT28HC16LN-70DM 24D3 Military AT28HC16L-70DM 24D6 (-55C to 125C) AT28HC16LN-70DM/883 24D3 Military AT28HC16L-70DM/883 24D6 with Burn-in (-55C to 125C) 90 80 0.5 AT28HC16LN-90DC 24D3 Commercial AT28HC16L-90DC 24D6 (0C to 70C) AT28HC16LN-90PC 24P3 AT28HC16L-90PC 24P6 AT28HC16L-W DIE AT28HC16LN-90DI 24D3 Industrial AT28HC16L-90DI 24D6 (-40C to 85C) AT28HC16LN-90PI 24P3 AT28HC16L-90PI 24P6 AT28HC16LN-90DM 24D3 Military AT28HC16L-90DM 2406 (-55C to 125C) AT28HC16LN-90DM/883 24D3 Military AT28HC16L-90DM/883 24D6 with Burn-in (-55C to 125C) 2-68 AT28HC16/L umesees ATSC 1 6/L Ordering Information (Contact Factory: Not recommended for new designs.) Package Type 24D3 24 Lead, 0.300" Wide, Non-Windowed, Ceramic Dual inline Package (Cerdip) 24D6 24 Lead, 0.600" Wide, Non-Windowed, Ceramic Dual Inline Package (Cerdip) 24P3 24 Lead, 0.300" Wide, Plastic Dual Inline Package (PDIP) 24P6 24 Lead, 0.600" Wide, Plastic Dual Inline Package (PDIP) Ww Die AIMEL 2-69