P01xxxN SENSITIVE SCR FEATURES n n IT(RMS) = 0.8A VDRM / VRRM= 200V to 600V A K DESCRIPTION A High performance planar technology. These parts are intended for general purpose applications where low gate sensitivity is required. G SOT223 (Plastic) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IT(RMS) * RMS on-state current (180 conduction angle) Ta= 70C 0.8 A IT(AV) * Mean on-state current (180 conduction angle) Ta= 70C 0.5 A tp = 8.3 ms 8 A tp = 10 ms 7 tp = 10 ms 0.24 A2s ITSM I2 t Non repetitive surge peak on-state current (Tj initial = 25C ) I2t Value for fusing dI/dt Critical rate of rise of on-state current IG = 10 mA diG /dt = 0.1 A/s. 30 A/s Tstg Tj Storage temperature range Operating junction temperature range - 40, + 150 - 40, + 125 C 260 C Tl Maximum lead temperature for soldering during 10s * : With 5cm2 copper (e=35m) surface under tab. Voltage Symbol VDRM VRRM Parameter Repetitive peak off-state voltage Tj = 125C RGK = 1K March 2000 - Ed: 1A Unit B D M 200 400 600 V 1/6 P01xxxN THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) Junction to ambient * 60 C/W Rth(j-l) Junction to tab for DC 30 C/W * : With 5cm2 copper (e=35m) surface under tab. GATE CHARACTERISTICS (maximum values) PG (AV)= 0.1 W PGM = 2 W (tp = 20 s) IGM = 1 A (tp = 20 s) ELECTRICAL CHARACTERISTICS Sensitivity Symbol IGT VD=12V (DC) RL=140 Unit Tj= 25C 09 02 11 MIN - - 4 MAX 1 200 25 A VGT VD=12V (DC) RL=140 Tj= 25C MAX 0.8 V VGD VD=VDRM RL=3.3k RGK = 1 K Tj= 125C MIN 0.1 V IRG =10A Tj= 25C MIN 8 V tgd VD=VDRM ITM = 3 x IT(AV) dIG/dt = 0.1A/s IG = 10mA Tj= 25C TYP 0.5 s IH IT= 50mA RGK = 1 K Tj= 25C MAX 5 mA IL IG=1mA RGK = 1 K Tj= 25C MAX 6 mA VTM ITM= 1.6A tp= 380s Tj= 25C MAX 1.95 V IDRM IRRM VD = VDRM RGK = 1 K VR = VRRM Tj= 25C MAX B/D: 1 - M: 10 A Tj= 125C MAX 100 A VD = 67%VDRM RGK = 1 K Tj= 125C MIN ITM= 3 x IT(AV) VR=35V dI/dt=10A/s tp=100s dV/dt=10V/s VD= 67%VDRM RGK = 1 K Tj= 125C MAX VGRM dV/dt tq 2/6 Test Conditions 50 75 200 80 V/s s P01xxxN Fig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Ttab). P (W) Ttab (oC) P (W) 1 1 360 -95 O -100 0.8 0.8 Rth(j-a) DC 0.6 = 180 = 120 0.4 = 90 = 60 0.2 0.1 0.2 0.3 0.6 -110 o 0.4 o -115 o 0.2 = 30 o 0 0 -105 o -120 I T(AV)(A) 0.4 0.5 0.6 0.7 o Tamb ( C) 0 0 0.8 Fig.3 : Average on-state current versus tab temperature. 20 40 60 80 100 120 -125 140 Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a)/Rth(j-a) I T(AV) (A) 1.00 1 DC 0.8 0.6 0.10 o = 180 0.4 Stan da rd fo ot print , e(Cu) =35 m 0.2 Tamb (oC) 0 0 10 20 30 40 50 60 70 80 tp (s) 90 100 110 120 130 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C] 0.01 1E-3 1E-1 1E +0 1 E+1 1E +2 5 E+2 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 8 10.0 9.0 7 8.0 6 7.0 Tj initial = 25oC 5 6.0 Igt 5.0 4.0 4 3 3.0 2.0 1E-2 2 Ih 1 1.0 0.0 -40 Number of cycles Tj(oC) -20 0 20 40 60 80 100 120 140 0 1 10 100 1,000 3/6 P01xxxN Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t. I 100 TSM Fig.8 : On-state characteristics (maximum values). (A). I2 t (A 2 s) 10 I TM (A) Tj initial = 25 oC Tj initial o 25 C I TSM 10 Tj max 1 1 Tj max Vto =0.95V Rt =0.60 0 I2 t VTM (V) tp(ms) 0.1 1 10 Fig.9 : Relative variation of holding current versus gate-cathode resistance (typical values). Ih(Rgk) Ih(Rgk=1k ) 5.0 Tj=25 o C 1.0 Rgk( ) 0.1 1. 0E+ 00 1. 0E+ 01 1.0 E+ 02 1 . 0E+ 03 1 .0 E+0 4 1 .0 E+0 5 1. 0E+0 6 4/6 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 P01xxxN PACKAGE MECHANICAL DATA SOT223 (Plastic) DIMENSIONS REF. c A V A1 Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 1.80 0.071 B A1 e1 0.02 0.001 B 0.60 0.70 0.80 0.024 0.027 0.031 B1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 D 6.30 6.50 6.70 0.248 0.256 0.264 D B1 H e 2.3 0.090 e1 4.6 0.181 E e E 3.30 3.50 3.70 0.130 0.138 0.146 H 6.70 7.00 7.30 0.264 0.276 0.287 V 10 max FOOT PRINT ORDERING INFORMATION P 01 02 A N SCR Planar Tape & Reel Package N = SOT223 Sensitivity Current 5xA4 Voltage 5/6 P01xxxN MARKING Type Marking P0102BN P2B P0109BN P9B P0111BN P1B P0102DN P2D P0109DN P9D P0111DN P1D P0102MN P2M P0109MN P9M P0111MN P1M Package Weight Delivery mode Base qty SOT223 0.11g Tape & Reel 1000 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2000 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6