Product Overview
Reflowable Thermal Protection Solutions for
Power Electronics Designs in Rugged Environments
TE Reflowable Thermal Protection (RTP) device is a low resistance, robust surface
mountable thermal protector. It has a set open temperature and can be installed using
reliable, lead-free, Surface Mount Device (SMD) assembly and reflow processes.
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Reflowable Thermal Protection for
Power Electronics Designs in Rugged EnvironmentsTE Connectivity
APPLICATIONS
• Helps provide protection against thermal runaway for power FETs and other
components if failure occurs in applications such as automotive HVAC, ABS,
power steering, DC/DC converters, PTC heaters, etc. or IT servers, telecom power,
converters, etc.
• Other DC thermal protection
BENEFITS
• Helps protect the system from thermal runaway damage due to failed power
components
• Allows use of standard surface-mount production methods with no special assembly
costs
• Low power dissipation and voltage drop
• Supports DC electronic circuits
• Suitable for rugged environment applications (automotive and industrial)
• Green design
KEY FEATURES
• Opens at temperature below
critical thermal threshold
• Compatible with up to 3 Pb-free
solder reflow processes with
peak temperatures up to 260°C
• Low series resistance
• DC interrupt voltage capable
• Robust design for harsh
environment tested per
stringent qualification
specification
• RoHS compliant, lead and
halogen free
The RTP device described in this overview can withstand the demanding environmental,
life, and reliability requirements of automotive and industrial applications, including shock,
vibration, temperature cycling, and humidity exposures. In the field, the RTP device opens
if its internal junction exceeds the device’s specified open temperature. Temperature
increases can have multiple sources, one of which is component failure (i.e. when using
power components such as a power FET, capacitor, resistor, triac, etc.). The RTP device
open temperature is selected so that the device does not open within normal component
operating windows, but it does open in a thermal runaway event and before the melt
temperature of typical lead free solders.
To simplify installation, improve reliability, and optimize thermal coupling with the PCB,
the RTP device is surface mountable. No special SMD installation is required. Instead,
after installation, the RTP device utilizes a one time electronic arming process to become
thermally sensitive. Before the arming procedure, the device can go through installation
temperatures up to 260°C without going open. After arming, the device will open when
the critical junction exceeds the open temperature. Arming can occur during test, or in
the field.
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Reflowable Thermal Protection for
Power Electronics Designs in Rugged Environments
TYPICAL APPLICATION BLOCK DIAGRAM
Failed powerFET
or other heat source
P1
PTH
ARM
+–
Load 1
Battery
Thermal
Coupling
RTP
PIN CONFIGURATION & DESCRIPTION PAD LAYOUT RECOMMENDATIONS
DEFINITION OF TERMS / DEVICE BLOCK DIAGRAM
Pin Description
Pin
Number
Pin
Name Pin Function
1 P1
Power I/O pin
(Main power current path)
2 PTH
Thermally sensitive power I/O pin -
Intended to share protected component heat sink
3 ARM Electronic arming pin
ARM
PTH P1
9.34
7.70
4.14
2.39
1.07
0.98
2.26
Pin Configuration
(Bottom View of Device)
Pad Dimensions in mm
(Top View – Through Component)
ARM
PTH P1
9.34
7.70
4.14
2.39
1.07
0.98
2.26
Pin Configuration
(Bottom View of Device)
Pad Dimensions in mm
(Top View – Through Component)
Junction The internal interface which must achieve the “Open Temperature” for the
RTP device to open thermally after arming. This interface (thermal element)
is located directly above the PTH pad.
Open Temp The device will open when the junction temperature achieves this value.
IARM and RARM Current and resistance levels measured between the ARM pin and either the
P1 or PTH pin. These values are relevant only pre device arming.
RPP and IPP Current and resistance levels measured between the P1 and PTH pins.
ARM
P1
RARM
PTH
IPP
IARM
Thermal
Protection
Device
Element
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Reflowable Thermal Protection for
Power Electronics Designs in Rugged EnvironmentsTE Connectivity
METHOD OF OPERATION – ELECTRONIC ARMING
The RTP device is a unique thermal protector. It can be reflowed at temperatures up to 260°C without opening, yet in operation it will open at
temperatures well below 260°C. To achieve this functionality, the RTP device uses an electronic arming mechanism.
Electronic arming must be done after reflow, and can be done during final test.
The device is armed by sending a specified arming current through the ARM pin of the device. Arming is a time- & current-dependent event.
Arming times vs. current are provided in the “Arming Characteristics” section of this overview. Current can flow in either direction through
the ARM pin.
Prior to arming, RARM should have typical resistance as specified in the “Arming Characteristics” section. Once armed, the ARM pin will be
electrically open relative to the P1 or PTH pins.
Arming has been successful once RARM exceeds the post-arming minimum resistance specified in the “Arming Characteristics” section. RTP
devices must be armed individually and cannot be armed simultaneously in series.
Once “armed”, the RTP device will permanently open when the device junction achieves its specified opening temperature.
Although multiple options exist, below is one simple arming option.
Sample Arming Options
During Test Current Flow Description
P1
PTH
ARM
RTP
PowerFET
Te st
Point 1
Te st
Point 2
PTH ARM = Arming
ARM pin connected between two test points
In this case, pin P1 is left “floating”, and arming can occur during test,
at a user defined time, by connecting to the Test Points and applying
sufficient current (IARM) between Test Point 1 and Test Point 2 until the
device is armed.
ABSOLUTE MAX RATINGS
Absolute Max Ratings
RTP200R060SA RTP140R060SD
Units
Max Max
Max DC Open Voltage (1) 32 32 VDC
Max DC Interrupt Current (1)
@ 16 VDC 200 200
A@ 24 VDC 130 130
@ 32 VDC 100 100
ESD rating (Human Body Model) 25 25 KV
Max Reflow Temperature (pre-arming) 260 260 °C
Operating temperature limits, post-arming,
non-opening
-55
+175
-40
+105 °C
(1) Performance capability at these conditions can be influenced by board design.
Performance should be verified in the user’s system.
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PERFORMANCE CHARACTERISTICS
Resistance and Open Characteristics
P1 to PTH
RTP200R060SA RTP140R060SD
Units
Min Typ Max Min Typ Max
RPP (Resistance from P1 to PTH)
@ 23+/-3°C – 0.6 0.8 –0.7 1.1
mΩ@ 105+/-3°C – – – – 0.9 1.2
@ 175+/-3°C – 0.8 1.2 – – –
Operating Voltage - - 32 - - 32 - VDC
Open Temperature, post-arming IPP = 0 196 205 213 135 140 145 °C
Thermal Resistance: Junction to Case Case = PTH pad – 0.5 – – 0.5 – °C/W
Installation dependent Operating Current,
post-arming (2)(3)
@ 23+/-3°C 32 – – 25 – –
A
@ 100+/-3°C 27 –––––
@ 105+/-3°C – – – 12 – –
@ 175+/-3°C 9 – – – – –
Moisture Sensitivity Level Rating (4) – – 1 – – 1 – –
ARMING CHARACTERISTICS
Arming Characteristics
ARM
RTP200R060SA RTP140R060SD
Units
Min Typ Max Min Typ Max
Arming Type Electronically Armed Electronically Armed –
RARM (Resistance from ARM to P1 or PTH)
Pre-Arming – 300 – – 300 – mΩ
Post-Arming 10 – – 10 – – KΩ
Arming Current (IARM) (2) @ 23 +/-3°C 2 – 5 2 – 5 A
Arming Time (@23 +/-3°C) (2)
@ 2A – 0.10 – – 0.10 –
Sec
@ 5A – 0.01 – – 0.01 –
(2) Results were obtained on 44.5 x 57.2 x 1.6 (mm) single layer FR4 boards with 70μm (2oz) Cu traces, and a 645mm2, 70μm (2oz) Cu heat spreader connected to the PTH pad of
the RTP device. (See RTP device test board drawing) Results will vary based on user’s configuration and should be validated by the user in the end system.
(3) Operating current is measured on the RTP test boards at the specified temperature. It is a highly installation dependent value.
(4) As per JEDEC J-STD-020C.
Reflowable Thermal Protection for
Power Electronics Designs in Rugged Environments
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Reflowable Thermal Protection for
Power Electronics Designs in Rugged EnvironmentsTE Connectivity
TYPICAL ELECTRICAL PERFORMANCE CHARACTERISTICS
P1PTH
TE CONNECTIVITY
T4225 Rev.2 JAN 2010
FR4 RTP Te st Board
Cu 2.0 oz
4x .100
4x .100
.039 (1.00)
.039 (1.00)
3X ø.030±.003
AFTER PLATING
PLATED THRU HOLE
4X ø.065±.003
NON PLATED HOLE
1.750
(44.5)
2.250 (57.2)
ARM
Typical Time-to-Open Vs Fault Current (IPP Open)
for RTP140R060SD Device
(Mounted as described in above notice)
Time-to-Open (sec)
Fault Current (A)
-40°C
23°C
+105°C
10
1
0.1
0.0150 70 90 110 130 150 170 190 210
RTP200R060SA
RTP140R060SD
1
0.1
0.01
2.03.0 4.05.0
Typical Arming Time @ 23 +/-3°C
(Mounted as described in above notice)
Arming Time (sec)
Activation Current - IARM (A)
100
10
1
0.1
0.01
050 100 150 200 250 300
Typical Time-to-Open Vs Fault Current (IPP Open)
for RTP200R060SA Device
(Mounted as described in above notice)
Time-to-Open (sec)
Fault Current (A)
-55°C
23°C
+175°C
0-50 50 100 150 200
40
30
20
10
0
Operating Current Vs Temperature
(Mounted as described in above notice)
Operating Current (A)
Temperature (°C)
RTP200R060SA
RTP140R060SD
1.0
0.5
0.0
0-50 50 100 150 200
Typical Resistance (RPP) Vs Temperature
(Passive Te sting)
RPP (mOhms)
Temperature (°C)
RTP200R060SA
RTP140R060SD
INSTALLATION DEPENDENT PERFORMANCE CHARACTERISTICS
Note: Results were obtained on 44.5 x 57.2 x 1.6 (mm) single layer FR4 boards with 70µm (2oz) Cu traces, and a 645mm2, 70µm (2oz)
Cu heat spreader connected to the PTH pad of the RTP device. (See RTP device test board drawing)
Results will vary based on user’s configuration and should be validated by the user in the end system.
P1PTH
TE CONNECTIVITY
T4225 Rev.2 JAN 2010
FR4 RTP Te st Board
Cu 2.0 oz
4x .100
4x .100
.039 (1.00)
.039 (1.00)
3X ø.030±.003
AFTER PLATING
PLATED THRU HOLE
4X ø.065±.003
NON PLATED HOLE
1.750
(44.5)
2.250 (57.2)
ARM
Typical Time-to-Open Vs Fault Current (IPP Open)
for RTP140R060SD Device
(Mounted as described in above notice)
Time-to-Open (sec)
Fault Current (A)
-40°C
23°C
+105°C
10
1
0.1
0.0150 70 90 110 130 150 170 190 210
RTP200R060SA
RTP140R060SD
1
0.1
0.01
2.03.0 4.05.0
Typical Arming Time @ 23 +/-3°C
(Mounted as described in above notice)
Arming Time (sec)
Activation Current - IARM (A)
100
10
1
0.1
0.01
050 100 150 200 250 300
Typical Time-to-Open Vs Fault Current (IPP Open)
for RTP200R060SA Device
(Mounted as described in above notice)
Time-to-Open (sec)
Fault Current (A)
-55°C
23°C
+175°C
0-50 50 100 150 200
40
30
20
10
0
Operating Current Vs Temperature
(Mounted as described in above notice)
Operating Current (A)
Temperature (°C)
RTP200R060SA
RTP140R060SD
1.0
0.5
0.0
0-50 50 100 150 200
Typical Resistance (RPP) Vs Temperature
(Passive Te sting)
RPP (mOhms)
Temperature (°C)
RTP200R060SA
RTP140R060SD
P1PTH
TE CONNECTIVITY
T4225 Rev.2 JAN 2010
FR4 RTP Te st Board
Cu 2.0 oz
4x .100
4x .100
.039 (1.00)
.039 (1.00)
3X ø.030±.003
AFTER PLATING
PLATED THRU HOLE
4X ø.065±.003
NON PLATED HOLE
1.750
(44.5)
2.250 (57.2)
ARM
Typical Time-to-Open Vs Fault Current (IPP Open)
for RTP140R060SD Device
(Mounted as described in above notice)
Time-to-Open (sec)
Fault Current (A)
-40°C
23°C
+105°C
10
1
0.1
0.0150 70 90 110 130 150 170 190 210
RTP200R060SA
RTP140R060SD
1
0.1
0.01
2.03.0 4.05.0
Typical Arming Time @ 23 +/-3°C
(Mounted as described in above notice)
Arming Time (sec)
Activation Current - IARM (A)
100
10
1
0.1
0.01
050 100 150 200 250 300
Typical Time-to-Open Vs Fault Current (IPP Open)
for RTP200R060SA Device
(Mounted as described in above notice)
Time-to-Open (sec)
Fault Current (A)
-55°C
23°C
+175°C
0-50 50 100 150 200
40
30
20
10
0
Operating Current Vs Temperature
(Mounted as described in above notice)
Operating Current (A)
Temperature (°C)
RTP200R060SA
RTP140R060SD
1.0
0.5
0.0
0-50 50 100 150 200
Typical Resistance (RPP) Vs Temperature
(Passive Te sting)
RPP (mOhms)
Temperature (°C)
RTP200R060SA
RTP140R060SD
P1PTH
TE CONNECTIVITY
T4225 Rev.2 JAN 2010
FR4 RTP Te st Board
Cu 2.0 oz
4x .100
4x .100
.039 (1.00)
.039 (1.00)
3X ø.030±.003
AFTER PLATING
PLATED THRU HOLE
4X ø.065±.003
NON PLATED HOLE
1.750
(44.5)
2.250 (57.2)
ARM
Typical Time-to-Open Vs Fault Current (IPP Open)
for RTP140R060SD Device
(Mounted as described in above notice)
Time-to-Open (sec)
Fault Current (A)
-40°C
23°C
+105°C
10
1
0.1
0.0150 70 90 110 130 150 170 190 210
RTP200R060SA
RTP140R060SD
1
0.1
0.01
2.03.0 4.
05
.0
Typical Arming Time @ 23 +/-3°C
(Mounted as described in above notice)
Arming Time (sec)
Activation Current - IARM (A)
100
10
1
0.1
0.01
050 100 150 200 250 300
Typical Time-to-Open Vs Fault Current (IPP Open)
for RTP200R060SA Device
(Mounted as described in above notice)
Time-to-Open (sec)
Fault Current (A)
-55°C
23°C
+175°C
0-50 50 100 150 200
40
30
20
10
0
Operating Current Vs Temperature
(Mounted as described in above notice)
Operating Current (A)
Temperature (°C)
RTP200R060SA
RTP140R060SD
1.0
0.5
0.0
0-50 50 100 150 200
Typical Resistance (RPP) Vs Temperature
(Passive Te sting)
RPP (mOhms)
Temperature (°C)
RTP200R060SA
RTP140R060SD
P1PTH
TE CONNECTIVITY
T4225 Rev.2 JAN 2010
FR4 RTP Te st Board
Cu 2.0 oz
4x .100
4x .100
.039 (1.00)
.039 (1.00)
3X ø.030±.003
AFTER PLATING
PLATED THRU HOLE
4X ø.065±.003
NON PLATED HOLE
1.750
(44.5)
2.250 (57.2)
ARM
Typical Time-to-Open Vs Fault Current (I
PP
Open)
for RTP140R060SD Device
(Mounted as described in above notice)
Time-to-Open (sec)
Fault Current (A)
-40°C
23°C
+105°C
10
1
0.1
0.0150 70 90 110 130 150 170 190 210
RTP200R060SA
RTP140R060SD
1
0.1
0.01
2.03.0 4.05.0
Typical Arming Time @ 23 +/-3°C
(Mounted as described in above notice)
Arming Time (sec)
Activation Current - IARM (A)
100
10
1
0.1
0.01
050 100 150 200 250 300
Typical Time-to-Open Vs Fault Current (IPP Open)
for RTP200R060SA Device
(Mounted as described in above notice)
Time-to-Open (sec)
Fault Current (A)
-55°C
23°C
+175°C
0-50 50 100 150 200
40
30
20
10
0
Operating Current Vs Temperature
(Mounted as described in above notice)
Operating Current (A)
Temperature (°C)
RTP200R060SA
RTP140R060SD
1.0
0.5
0.0
0-50 50 100 150 200
Typical Resistance (RPP) Vs Temperature
(Passive Te sting)
RPP (mOhms)
Temperature (°C)
RTP200R060SA
RTP140R060SD
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MATERIAL CONSTRUCTION
RoHS Compliant ELV Compliant Pb-Free Halogen Free*
Directive 2002/95/EC
Compliant
Directive 2000/53/EC
Compliant Pb HF
* Halogen Free refers to: Br≤900ppm, Cl≤900ppm, Br+Cl≤1500ppm.
MECHANICAL DIMENSIONS
Length
Height
Width
RTP200R060SA Units
Min Max
Height 6.00 6.35 mm
Length 11.60 12.00 mm
Width 5.25 5.50 mm
P1PTH
TE CONNECTIVITY
T4225 Rev.2 JAN 2010
FR4 RTP Te st Board
Cu 2.0 oz
4x .100
4x .100
.039 (1.00)
.039 (1.00)
3X ø.030±.003
AFTER PLATING
PLATED THRU HOLE
4X ø.065±.003
NON PLATED HOLE
1.750
(44.5)
2.250 (57.2)
ARM
Typical Time-to-Open Vs Fault Current (IPP Open)
for RTP140R060SD Device
(Mounted as described in above notice)
Time-to-Open (sec)
Fault Current (A)
-40°C
23°C
+105°C
10
1
0.1
0.0150 70 90 110 130 150 170 190 210
RTP200R060SA
RTP140R060SD
1
0.1
0.01
2.03.0 4.05.0
Typical Arming Time @ 23 +/-3°C
(Mounted as described in above notice)
Arming Time (sec)
Activation Current - IARM (A)
100
10
1
0.1
0.01
050 100 150 200 250 300
Typical Time-to-Open Vs Fault Current (IPP Open)
for RTP200R060SA Device
(Mounted as described in above notice)
Time-to-Open (sec)
Fault Current (A)
-55°C
23°C
+175°C
0-50 50 100 150 200
40
30
20
10
0
Operating Current Vs Temperature
(Mounted as described in above notice)
Operating Current (A)
Temperature (°C)
RTP200R060SA
RTP140R060SD
1.0
0.5
0.0
0-50 50 100 150 200
Typical Resistance (RPP) Vs Temperature
(Passive Te sting)
RPP (mOhms)
Temperature (°C)
RTP200R060SA
RTP140R060SD
PTH pad area = 661mm2, P1 pad area = 393mm2, ARM pad area = 169mm2
Reflowable Thermal Protection for
Power Electronics Designs in Rugged Environments
Test Board: 44.5 x 57.2 x 1.6 mm, 70µm (2oz) Cu
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Reflowable Thermal Protection for
Power Electronics Designs in Rugged EnvironmentsTE Connectivity
Intimate thermal contact with the potential heat source is critical to achieve the desired protection performance. The RTP device should be
used so that the PTH pin shares a copper mounting pad with the primary thermal pin or heat sink of the FET or protected component. Board
layout recommendations for appropriate thermal coupling are provided below.
1. The RTP device PTH pad must be placed as close to the FET heat sink as practical.
2. Connect the PTH pad to the FET heat sink with as thick and wide a copper trace as practical.
3. Additional copper layers should NOT be placed directly underneath the PTH pad, and if possible, pull additional copper layers away from
the RTP device PTH pad. These additional copper layers work to pull heat away from the RTP device and decrease its thermal sensitivity.
4. Pull top layer “cooling” traces as far away from RTP device PTH pad as practical.
Example layout of an RTP device mounted near to a typical powerFET package on an FR4 type PCB
Note: Thermal conductivity between the RTP device and the heat source is highly dependent on board layout, heat sink structures, and relative
placement and design of co-located components. It is the responsibility of the user to verify that the RTP device provides sufficient protection
in the user’s specific final device implementation.
ARM
Via to GND or TP
RTP
device
pads
FET
pads
PTH
P1
LAYOUT RECOMMENDATIONS
RECOMMENDED REFLOW PROFILE
Critical Zone
TL to Tp
Ramp up
t 25°C to Peak
Reflow Profile Time
Ramp down
ts
Preheat
TsMAX
TL
Tp
tp
25
TsMIN
tL
Temperature
Classification Reflow Profiles Reflow Profile
Profile Feature Pb-Free Assembly
Average Ramp-Up Rate (TsMAX to Tp) 3°C/second max.
Preheat
• Temperature Min (TsMIN)
• Temperature Max (TsMAX)
• Time (tsMIN to tsMAX)
150°C
200°C
60-180 seconds
Time maintained above:
• Temperature (TL)
• Time (tL)
217°C
60-150 seconds
Peak/Classification Temperature (Tp) 260°C
Time within 5°C of actual Peak Temperature
Time (tp) 20-40 seconds
Ramp-Down Rate 6°C/second max.
Time 25°C to Peak Temperature 8 minutes max.
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TE Connectivity
Schematic Solution Considerations
Low Side, N-Channel
Single FET Protection
N-Channel
PowerFET
Load Resistance
P1
PTH
ARM
DS
G
Battery
RTP
RTP
P1
PTH
ARM
DS
G
Battery
P1
PTH
ARM
DS
G
Battery
Load 1Load 1
Load 2
DS
G
RTP
• Low side N-Channel FET architectures allow only
one FET to be installed per RTP device.
• Note: Load may limit “arming” current.
High Side, N-Channel FET Protection
Single FET
N-Channel
PowerFET
Load Resistance
P1
PTH
ARM
DS
G
Battery
RTP
RTP
P1
PTH
ARM
DS
G
Battery
P1
PTH
ARM
DS
G
Battery
Load 1L
oad 1
Load 2
DS
G
RTP
• High Side FET designs allow multiple FETs to be
installed with 1 RTP device while all sharing the
same copper mounting pad (heat sink).
• In the Multi-FET configuration, care must be taken
to assure proper thermal response can be achieved
with each FET.
Multi FET
N-Channel
PowerFET
Load Resistance
P1
PTH
ARM
DS
G
Battery
RTP
RTP
P1
PTH
ARM
DS
G
Battery
P1
PTH
ARM
DS
G
Battery
Load
1Load 1
Load 2
DS
G
RTP
ALTERNATE & MULTI-FET SCHEMATIC IMPLEMENTATIONS
QUALIFICATION TESTING
Note: The degree of thermal connectivity between the heat source and the RTP device is highly dependent on board layouts, PCB material, heat
sink structures, and relative placement and design of co-located components. It is the responsibility of the user to verify that the RTP device
provides sufficient protection in the user’s specific final device implementation.
The Qualification testing plan for this series of RTP devices is built upon AEC automotive grade testing for ICs (AEC-Q100), discrete
semiconductors (AEC-Q101), and passive components (AEC-Q200), with the intent to demonstrate survivability to the most stringent of the
relevant requirements.
Contact TE Circuit Protection for updated qualification status and detailed procedures.
*A specific list of tests and conditions is available upon request.
Reflowable Thermal Protection for
Power Electronics Designs in Rugged Environments
ENVIRONMENTAL SPECIFICATIONS
RTP200R060SA RTP140R060SD
Test Conditions Test Conditions
Passive thermal aging 175°C, 1000 hours Passive aging 105°C, 1000 hours
Active thermal aging 175°C, 3A bias, 1000hr Humidity aging 85°C, 85% RH, 1000 hours
Passive humidity aging 85°C, 85% RH, 1000 hours Storage humidity Per IPC/JEDEC J-STD020A level 1 (MSL1)
Active humidity aging 85°C, 85% RH, 5A bias, 1000hr Thermal shock 105°C, -40°C (300 times)
Storage humidity Per IPC/JEDEC J-STD020A level 1 (MSL1)
Thermal shock 125°C, -55°C (300 times)
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All information, including illustrations, is believed to be accurate and reliable. Users, however, should independently evaluate the suitability
of and test each product selected for their application. Tyco Electronics Corporation and/or its Afliates in the TE Connectivity Ltd. family of
companies (“TE”) makes no warranties as to the accuracy or completeness of the information, and disclaims any liability regarding its use.
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or consequential damages arising from the sale, resale, use, or misuse of its products. Specications are subject to change without notice.
In addition, TE Connectivity reserves the right to make changes to materials or processing that do not affect compliance with any applicable
specication without notication to Buyer. Without expressed or written consent by an ofcer of TE, TE does not authorize the use of any of
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circuitprotection.com/rtp-launch
Brazil
Tel : 55-11-2103-6090
Fax : 55-11-2103-6216
UK / Eire / Benelux / Israel
South Africa / Nordic / Baltic / Others
Tel : 49-89-6089485
Fax : 49-89-6089394
Germany / Austria / Switzerland /
Eastern Europe / Russia
Tel : 49-89-6089584
Fax : 49-89-6089394
France / Italy / Iberia /
Greece / Turkey
Tel : 33-1-34208455
Fax : 33-1-34208479
Japan
Tel : 81-44-844-8130
Fax : 81-44-844-8040
Korea
Tel : 82-2-3415-4654
Fax : 82-2-3486-1786
Taiwan
Tel : 886-2-8768-2788 x 211
Fax : 886-2-8768-1277
China, Hong Kong
Tel : 852-2738-8181
Fax : 852-2735-1185
China, Beijing
Tel : 86-10-6569-3488 x 16526
Fax : 86-10-6569-3206
China, Shanghai
Tel : 86-21-6106-7379
Fax : 86-21-6485-3255
China, Shenzhen / Guangzhou
Tel : 86-755-2515-4797
Fax : 86-755-2598-0419
Singapore / Indonesia
Tel : 65-6590-5089
Fax : 65-6481-9377
Thailand / Malaysia / Vietnam
Tel : 6-04-217-8112
Fax : 6-04-229-8177
Australia / Philippines
Tel : 63-2-988-9465
Fax : 63-2-848-0205
India
Tel : 91-80-4161-3745
Mobile : 91-99-0248-8886
TE Circuit Protection
308 Constitution Drive
Menlo Park, CA USA 94025-1164
Tel : (800) 227-7040, (650) 361-6900
Fax : (650) 361-4600
Email : RTP@TE.COM
Part numbers in this brochure are RoHS Compliant*, unless marked otherwise.
*as defined www.te.com/leadfree
