S6468-52 is a high-speed sensor incorporating a violet sensitivity-enhanced Si PIN photodiode and a preamplifier in the same package. S6468-52
is suitable for optical pickups using a violet laser and receivers in optical communications.
Features
l
Cut-off frequency: 70 MHz (λ=400 nm)
l
Low noise: 25 nV/Hz
1/2
(f=1 MHz)
l
3-pin TO-18 package
l
Active area: φ0.4 mm
Applications
l
Optical pickup
l
Optical fiber communications
l
Video signal transmission
PHOTODIODE
Si PIN photodiode with preamp
PIN photodiode/preamp device with enhanced violet sensitivity
S6468-52
■ Absolute maximum ratings
Parameter Symbol Value Unit
Supply voltage Vcc -0.5 to 7 V
Power dissipation P300 mV
Operating temperature Topr -20 to 70 °C
Storage temperature Tstg -40 to 100 °C
■ Recommended operating conditions
Parameter Symbol Min. Typ. Max. Unit
Supply voltage Vcc 4.75 5 5.25 V
Load resistance RL10 - - kW
Load capacitance CL--3pF
■ Electrical and optical characteristics (Ta=25 ºC, Vcc=5 V, CL=3 pF)
Parameter Symbol Condition Min. Typ. Max. Unit
Spectral response range l320 to 1000 nm
Peak sensitivity wavelength lp-740 -nm
Photo sensitivity S l=400 nm -5.4-
mV/mW
Trans-impedance Rt -18 -kW
Power supply current Icc RL=¥--6.5mA
Output bias voltage Vo RL=¥, Pin=0 mW1.25 1.55 1.85 V
Cut-off frequency fc l=400 nm, RL=10 kW,
Pin=10 mW (Peak) 60 70 - MHz
Output noise voltage Vn f=1 MHz, RL=500 W,
Pin=0 mW-25 -nV/Hz1/2
Overshoot - Pin=10 mW (Peak) --10%
1
Si PIN photodiode with preamp
S6468-52
0
0.1 1 10
FREQUENCY (MHz)
OUTPUT NOISE DENSITY (nV/Hz
1/2
)
100 1000
(Typ.Ta=25 ˚C, R
L
=10 kΩ, C
L
=3 pF, Vcc=5 V)
10
20
30
40
50
60
70
80
90
100
-30
0.1 1 10010 1000
-10
-20
(Typ. Ta=25 ˚C, R
L
=10 kΩ, C
L
=3 pF, V
CC
=5 V)
0
10
RELATIVE SENSITIVITY (dB)
FREQUENCY (MHz)
200
WAVELENGTH (nm)
PHOTO SENSITIVITY (mV/µW)
400 600 800 1000 1200
(Typ.Ta=25 ˚C, RL=10 kΩ, CL=3 pF)
0
2
4
6
8
10
■ Spectral response
KPINB0193EB
■ Frequency response
KPINB0194EA
■ Output noise density characteristic
KPINB0195EB
■ Basic circuit connection
Vcc
GND
Vsignal
RLCLCB
Vcc
KPINC0001EA
■ Dimensional outline (unit: mm)
13.5 3.6 ± 0.2
2.8
5.4 ± 0.2
WINDOW
3.0
±
0.1
4.7 ± 0.1
PHOTOSENSITIVE
SURFACE
2.54 ± 0.2
0.45
LEAD
Vcc
GND (CASE)
V signal
KPINA0001EF
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K.
Cat. No. KPIN1054E04
Feb. 2003 DN
2
● ESD
S6468-52 may be damaged or their performance may deteriorate by such factors as electro static discharge from the human body, surge
voltages from measurement equipment, leakage voltages from soldering irons and packing materials, etc. As a countermeasure against
electro static discharge, the device, operator, work place and measuring jigs must all be set at the same potential. The following precautions
must be observed during use:
· To protect the device from electro static discharge which accumulate on the operator or the operator's clothes, use a wrist strap or similar
tools to ground the operator's body via a high impedance resistor (1 MΩ).
· A semiconductive sheet (1 MΩ to 100 MΩ) should be laid on both the work table and the floor in the work area.
· When soldering, use an electrically grounded soldering iron with an isolation resistance of more than 10 MΩ.
· For containers and packing, use of a conductive material or aluminum foil is effective. When using an antistatic material, use one with a
resistance of 0.1 MΩ/cm2 to 1 GΩ/cm2.
● Wiring
· RL and CL are the total resistive load and capacitive load, as seen from the OUT terminal. When connecting a cable or circuit to the latter
stage of the basic connection diagram, the cable or circuit resistance and capacitance should also be taken into account.
Use RL≥10 kΩ and CL≤3 pF according to the recommended operating conditions.
· Also connect a bypass capacitor (CB=0.01 µF to 0.1 µF ceramic capacitor) between the VCC lead and GND lead.
· The lead length should be less than 5 mm.
· If electric current or voltage is applied in reverse polarity to an electronic device such as a preamplifier, this can degrade device
performance or destroy the device. Always check the wiring and dimensional outline to avoid misconnection.
Precautions for use
