HEWLETT PACKARD G2 Schottky Barrier Diodes for Stripline, Microstrip Mixers and Detectors Technical Data Features Small Size Low Noise Figure 6 dB Typical at 9 GHz * Rugged Design High Uniformity High Burnout Rating 1 W RF Pulse Power Incident Both Medium and Low Barrier Available Description/ Applications This family consists of medium barrier and low barrier beam lead diodes mounted in easily handled carrier packages. Low barrier diodes provide optimum noise figure at low local oscilla- tor drive levels. Medium barrier diodes provide a wider dynamic range for lower distortion mixer designs. Application Note 976 presents impedance matching techniques for an X-Band mixer. Package Characteristics These diodes are designed for microstrip and stripline use. The kovar leads provide good continuity of transmission line impedance to the diode. Outline C2 is a plastic on ceramic package. Outline H2 has a metal ceramic hermetic seal. ANGLE CUT 30-50 ALTERNATE 0.13 (.005) DIA. HOLE 1.5 (0.06) FROM END ng 0.46 (0.018) . 0.30 (0.012) 1.40 (0.055) 1,14 (0.045) SQUARE 0.36 (0.014) M. rt _y ~~ 5082-2200/01/02/03 5082-2207/08/09/10 5082-2765/66 5082-2774/75 5082-2785/86 5082-2794/95 a] i 3.81 (0.150) oh" MIN, 1.27 (0,050) 9.10 10.004} MAX, TYP as Outline C2 Cp = 0.055 pF o_1+-_o 2.59 (0.102) 2.06 (0.081) + LID Dta. 0.58 (0.023) CATHODE 0.43 (0.017) oN + L> ( } oo, Nv 2.64 (0.104) |_2-34 (0.092) | | 3.30 (0.130) SQUARE MIN, + 0.88 (0,035) KOVAR LEADS, 0-64 (0-025) 9 18 10.007 Au PLATED 0.08 (0.003) = => 9 (0.035: Outline H2 Cp = 0.175 pF DIMENSIONS IN MILLIMETERS AND (INCHES). The ceramic is alumina. Metal parts are gold plated kovar. The hermetic package, outline H2, is capable of passing many 3-74 of the environmental tests of MIL-STD-750. The applicable solderability test is reference 2031.1: 260C, 10 seconds.Maximum Ratings Operating and Storage Temperature Range C2 Packaged Diodes ............cc:csessssscessereeeseeseeseeseseaeeee -65C to +150 C H2 Packaged Diodes ...............secscscssseececeesseesencersoeaes -65C to +175 C Pulse Power Incident at Toagp = 25C .0.....cessscscesecsssecstscnesseenensees 1W (1 ps pulse, Du = 0.001) CW Power Dissipation at Tease = 25C (Measured in an infinite heat sink) ..............ccsecsssssesssseeees 125 mW Derate linearly to zero at maximum operating temperature. Diode Mounting Temperature in Packages 235C for 10 sec max. ..260C for 10 sec max. neseegnecesnesessdensnecscessseaseqecoredttecacenseetsessnensenseatsate 4V These diodes are ESD sensitive. Handle with care to avoid static discharge through the diode. RF Electrical Specifications at T, = 25C Maximum IF Typical Part Batch Test Noise Impedance Junction Number Matched* Freq. Figure Zip (Q) Maximum Capacitance 6082- 5082. (GHz) Barrier NF (dB) Min. Max. SWR Package C, @F) 2200 2201 9.375 Medium 6.0 200 400 15:1 Hermetic 0.18 2202 2203 Medium 6.5 2.0:1 H2 2765 2766 Low 6.0 150 350 1.6:1 2785 2786 Low 6.5 2.0:1 2207 2208 Medium 6.0 200 400 1.5:1 Broadband 2209 2210 Medium 6.5 2.0:1 c2 2774 2775 Low 6.0 150 350 1.6:1 2794 2795 Low 6.5 2.0:1 Test ANF $0.3 dB DC Load Resistance = 0 Q V=z0 Conditions | AZjp S25 Q L.O. Power = 1 mW IF = 30 MHz, 1.5 dB NF *Minimum batch size 20 units. Typical Detector Characteristics at T, = 25C Medium Barrier and Low Barrier (DC Bias) Parameter Symbol | Typical Value Units Test Conditions Tangential Sensitivity Tsg -54 dBm 20 pA Bias, Ry, = 100 kQ P,,, = - 40 dBm Voltage Sensitivity y 6.6 mV/LW Video Bandwidth = 2 MHz f= 10 GHz Video Resistance Ry 1400 Q Low Barrier (Zero Bias) Parameter Symbol Typical Value Units Test Conditions Tangential Sensitivity Tss -44 dBm Zero Bias, Ry = 10 MQ P,, = - 30 dBm Voltage Sensitivity v 10 mV/LW Video Bandwidth = 2 MHz f= 10 GHz Video Resistance Ry 18 MQ 3-75Typical Parameters MEDIUM BARRIER LOW BARRIER 100 100 < z 10 1 t t z z z & a +126C 3 3 a 1.0 a 10 c e < = = c ce g 2 ; 0.1 ) O41 a + 85C 0.01 0.01 0 02 04 06 08 1.0 9.0 0.2 04 06 0.8 Vp FORWARD VOLTAGE (V) Ve FORWARD VOLTAGE (V) Figure 1. Typical Forward Characteristics. Figure 2. Typical Forward Characteristics. Figure 3. Typical Admittance Characteristics, 5082-2200 Figure 4. Typical Admittance Characteristics, 5082-2200 and 5082-2765 with Self Bias. and 6082-2765 with External Bias. 3-7623 2 Figure 6. Typical Admittance Characteristics, 5082-2202 and 6082-2785 with External Bias. a e Figure &. Typical Admittance Characteristics, 5082-2202 and 5082-2785 with Self Bias. Typical Parameters (cont.) Figure 8. Typical Admittance Characteristics, 5082-2207 and 5082-2774 with External Bias. Typical Admittance Characteristics, 5082-2207 -2774 with Self Bias. Figure 7. and 5082.Typical Parameters (cont.) Figure 9. Typical Admittance Characteristics, 5082-2209 Figure 10. Typical Admittance Characteristics, 5082- and 5082-2794 with Self Bias. 2209 and 5082-2794 with External Bias. 75 502 PPO STRIPLINE J 1/8 INCH GROUND PLANE SPACING 7.0 | DEVICE UNDER TEST a wo CATHODE GROUNDED w on ~~ 5 z | PPO a ty] air P 3 i GROUND 6.0 f 10.0 Le * 41 {0.40} {0.16) PACKAGE DIMENSION c2 1.91 + 0.05 {0.075 + 0.002) 65 H2 2.67 + 0.06 1 3 5 7 8 WW 13 15 {0.105 + 0.002) FREQUENCY (GHz) DIMENSIONS IN MILLIMETERS (INCHES} Figure 11. Typical Noise Figure vs. Frequency for 5082- Figure 12. Admittance Test Circuit. 2209, -2794, 3-7846.92. 0.320 (0.0126) err, = 6.37 MODEL FOR H2 DIODES 14.52. Ry 47.62 0.775 {0.0305} err. =6.37 fa po cy I tT 0.085 pF DIMENSIONS IN MILLIMETERS ({NCHES) 1 mA Rect. Current 20 pA Ext. Bias Parameter Symbol 5082-2200, 5082-2765 5082-2200, 5082-2765 | Units Junction Resistance Ry 258 545 Q Junction Capacitance Cy; 0.255 0.302 pF MODEL FOR C2 DIODES 14.52. Ry ay 8 Te 67.02 0.830H 67.082 0.318 (0.0125) 0.318 (0.0125) ere. = 6.37 err. = 6.37 Cy I UF 0.065 pF DIMENSIONS IN MILLIMETERS (INCHES) 1 mA Reet, Current 20 pA Ext. Bias Parameter Symbol 5082-2207, 5082-2774 5082-2207, 5082-2774 | Units Junction Resistance Ry 338 421 Q Junction Capacitance Cy; 0.189 0.195 pF 3-79