DATASHEET
2.5 V/3.3 V ECL 1:2 Differential
Fanout Buffer MC100ES6011
MC100ES6011 REVISION 6 OCTOBER 4, 2013 1 ©2013 Integrated Device Technology, Inc.
The MC100ES6011 is a differential 1:2 fanout buffer. The ES6011 is ideal for
applications requiring lower voltage.
The 100ES Series contains temperature compensation.
Features
• 270 ps Typical Propagation Delay
• Maximum Frequency > 3 GHz Typical
• PECL Mode Operating Range: V CC = 2.375 V to 3.8 V with VEE = 0 V
• ECL Mode Operating Range: VCC = 0 V with VEE = -2.375 V to -3.8 V
• Open Input Default State
• Q Output Will Default LOW with Inputs Open or at VEE
• LVDS In put Compatible
• 8-Lead SOIC and TSSOP Pb-Free Packages Available
•Use replacement part: 853S011
ORDERING INFORMATION
Device Package
MC100ES6011D SO-8
MC100ES6011DR2 SO-8
MC100ES6011EF SO-8 (Pb-Free)
MC100ES6011EFR2 SO-8 (Pb-Free)
MC100ES6011DT TSSOP-8
MC100ES6011DTR2 TSSOP-8
MC100ES6011EJ TSSOP-8 (Pb-Free)
MC100ES6011EJR2 TSSOP-8 (Pb-Free)
PIN DESCRIPTION
Pin Function
D(1), D(2)
1. Pins will default LOW when left open.
2. Pins will default to 0.572 VCC/2 when left
open.
ECL Data Inputs
Q0, Q0 Q1, Q1 ECL Data Outputs
VCC Positive Supply
VEE Negative Supply
MC100ES6011
D SUFFIX
8-LEAD SOIC PACKAGE
CASE 751-07
EF SUFFIX
8-LEAD SOIC PACKAGE
Pb-FREE PACKAGE
CASE 751-07
DT SUFFIX
8-LEAD TSSOP PACKAGE
CASE 1640-01
EJ SUFFIX
8-LEAD TSSOP PACKAGE
Pb-FREE PACKAGE
CASE 1640-01
1
2
3
45
6
7
8
D
VEE
VCC
Q0
D
Q1
Q1
Q0
Figure 1. 8-Lead Pinout (Top View) and Logic Diagram
Product Discontinuance Notice – Last Time Buy Expires on (12/19/2013)
ICS843N001I Data Sheet 2.5 V/3.3 V ECL 1:2 DIFFERENTIAL FANOUT BUFFER
MC100ES6011 REVISION 6 OCTOBER 4, 2013 2 ©2013 Integrated Device Technology, Inc.
Table 1. Attributes
Characteristics Value
Internal Input Pulldown Resistor 75 k
Internal Input Pullup Resistor 56 k
ESD Protection Human Body Model
Machine Model
Charged Device Model
> 4000 V
> 200 V
> 1500 V
JA Thermal Resistance (Junction to Ambient) 0 LFPM, 8 SOIC
500 LFPM, 8 SOIC 190C/W
130C/W
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
Table 2. Maximum Ratings(1)
1. Absolute maximum continuous ratings are those maximum values beyond which damage to the device may occur. Exposure to these
conditions or conditions beyond those indicated may adversely affect device reliability. Functional op eration at absolute-maximum-rated
conditions is not implied.
Symbol Parameter Conditions Rating Units
VSUPPLY Power Supply Voltage Difference between VCC & VEE 3.9 V
VIN Input Voltage VCC–VEE < 3.6 V VCC +0.3
VEE –0.3 V
V
IOUT Output Current Continuous
Surge 50
100 mA
mA
TA Operating Temperature Range –40 to +85 C
Tstg Storage Temperature Range –65 to +150 C
Table 3. DC Characteristics (VCC = 0 V; VEE = –2.5 V ± 5% or VCC = 2.5 V ± 5%; VEE = 0 V)(1)
1. ES6011 circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow > 500 LFPM is maintained.
Symbol Characteristic –40C 0C to 85CUnit
Min Typ Max Min Typ Max
IEE Power Supply Current 12 25 12 25 mA
VOH Output HIGH Voltage(2)
2. Output termination voltage VTT = 0 V for VCC = 2.5 V operation is supported but the power consumption of the device will increase.
VCC–1135 VCC–760 VCC–1070 VCC–760 mV
VOL Output LOW Voltage(2) VCC–1950 VCC–1350 VCC–1950 VCC–1520 mV
VOUTPP Output Peak-to-Peak Voltage 200 200 mV
VIH Input HIGH Voltage (Single Ended) VCC–1165 VCC–880 VCC–1165 VCC–880 mV
VIL Input LOW Voltage (Single Ended) VCC–1810 VCC–1475 VCC–1810 VCC–1475 mV
VPP Differential Input Voltage(3)
3. VPP (DC) is the minimum differential input voltage swing required to maintain device functionality.
0.12 1.3 0.12 1.3 V
VCMR Differential Cross Point Voltage(4)
4. VCMR (DC) is the crosspoint of the differential input signal. Functional operation is obtained when the crosspoint is within the VCMR (DC)
range and the input swing lies within the VPP (DC) specification.
VEE +1.0 VCC –0.8 VEE +1.0 VCC–0.8 V
IIN Input Current 150 150 A
ICS843N001I Data Sheet 2.5 V/3.3 V ECL 1:2 DIFFERENTIAL FANOUT BUFFER
MC100ES6011 REVISION 6 OCTOBER 4, 2013 3 ©2013 Integrated Device Technology, Inc.
Figure 2. VOUTPP versus Frequency Figure 3. Typical Termination for Output Driver
and Device Evaluation
Table 4. DC Characteristics (VCC = 0 V; VEE = –3.8 to –3.135 or VCC = 3.8 to 3.135 V; VEE = 0 V)(1)
1. ES6011 circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow > 500 LFPM is maintained.
Symbol Characteristic –40C 0C to 85CUnit
Min Typ Max Min Typ Max
IEE Power Supply Current 12 25 12 25 mA
VOH Output HIGH Voltage(2)
2. Output termination voltage VTT = 0 V for VCC = 2.5 V operation is supported but the power consumption of the device will increase.
VCC –1135 VCC –760 VCC –1070 VCC –760 mV
VOL Output LOW Voltage(2) VCC –1950 VCC –1500 VCC –1950 VCC –1520 mV
VOUTPP Output Peak-to-Peak Voltage 200 200 mV
VIH Input HIGH Voltage (Single Ended) VCC –1165 VCC –880 VCC –1165 VCC –880 mV
VIL Input LOW Voltage (Single Ended) VCC –1810 VCC –1475 VCC –1810 VCC –1475 mV
VPP Differential Input Voltage(3)
3. VPP (DC) is the minimum differential input voltage swing required to maintain device functionality.
0.12 1.3 0.12 1.3 V
VCMR Differential Cross Point Voltage(4)
4. VCMR (DC) is the crosspoint of the differential input signal. Functional operation is obtained when the crosspoint is within the VCMR (DC)
range and the input swing lies within the VPP (DC) specification.
VEE +1.0 VCC –0.8 VEE +1.0 VCC –0.8 V
IIN Input Current 150 150 A
Table 5. AC Characteristics (VCC = 0 V; V EE = –3.8 to –2.375 or VCC = 2.375 to 3.8 V; VEE = 0 V)(1)
1. Measured using a 750 mV source 50% Duty Cycle clock source. All loading with 50 to VCC–2.0 V.
Symbol Characteristic –40C25C0C to 85CUnit
Min Typ Max Min Typ Max Min Typ Max
fMAX Maximum Frequency > 3 > 3 > 3 GHz
tPLH,
tPHL
Propagation Delay (Differential)
CLK to Q, Q 170 260 300 180 270 310 210 285 360 ps
tSKEW Within Device Skew Q, Q
Device-to-Device Skew(2)
2. Skew is measured between outputs under identical transitions.
920
130 920
130 920
150 ps
tJITTER Cycle-to-Cycle Jitter RMS (1) 1 1 1 ps
VPP Input Voltage Swing
(Differential) 150 1200 150 1200 150 1200 mV
VCMR Differential Cross Point Voltage VEE +1.2 VCC–1.1 VEE +1.2 VCC –1.1 VEE +1.2 VCC –1.1 V
tr
tf
Output Rise/Fall Times
(20% – 80%) 70 220 70 220 70 220 ps
50
Driver
Device Receiver
Device
Q
Qb
D
Db
50
VTT
VTT = VCC – 2.0 V
ICS843N001I Data Sheet 2.5 V/3.3 V ECL 1:2 DIFFERENTIAL FANOUT BUFFER
MC100ES6011 REVISION 6 OCTOBER 4, 2013 4 ©2013 Integrated Device Technology, Inc.
PACKAGE DIMENSIONS
PAGE 1 OF 2
CASE 751-07
ISSUE U
8-LEAD SOIC PACKAGE
ICS843N001I Data Sheet 2.5 V/3.3 V ECL 1:2 DIFFERENTIAL FANOUT BUFFER
MC100ES6011 REVISION 6 OCTOBER 4, 2013 5 ©2013 Integrated Device Technology, Inc.
PACKAGE DIMENSIONS
PAGE 2 OF 2
CASE 751-07
ISSUE U
8-LEAD SOIC PACKAGE
ICS843N001I Data Sheet 2.5 V/3.3 V ECL 1:2 DIFFERENTIAL FANOUT BUFFER
MC100ES6011 REVISION 6 OCTOBER 4, 2013 6 ©2013 Integrated Device Technology, Inc.
PACKAGE DIMENSIONS
A
B
3.00
12
8
1.95
0.60
0.60
1.5
0.65
0.325
8
3
8
3
0.20 C
0.25 C
0.20 C D
2X
4.90
2.45
1.5
3.00
D
2X
0.38
0.25
8X
0.13
M
A-BCD
1.10 MAX
DETAIL "B"
SEATING PLANE
GAUGE PLANE
TOP VIEW
0.95
0.75
0.15
0.05
0.10 C
8X
4X
C
0.48 MAX
(0.95)
0.07 MIN
0.70
0.40
15˚
5˚
4X
15˚
5˚
6˚
0˚
0.38
0.25
0.33
0.25
0.23
0.13
0.18
0.13
BASE METAL
A
A
SEE VIEW C
H
B
B
0.25
4
SEATING PLANE
C
SIDE VIEW
VIEW A-A
DETAIL "B"
DAMBAR PROTRUSION
SECTION B-B
SEE NOTE 6
VIEW C
NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
DIMENSIONS ARE IN MILLIMETERS.
THIS DIMENSION DOES NOT INCLUDE MOLD FLASH OR PROTRUSIONS
AND ARE MEASURED AT DATUM H, MOLD FLASH OR PROTRUSIONS,
SHALL NOT EXCEED 0.15mm PER SIDE.
DIMENSION IS THE LENGTH OF TERMINAL FOR SOLDERING TO A
SUBSTRATE.
THE LEAD WIDTH DIMENSION DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08mm TOTAL IN EXCESS
OF THE LEAD WIDTH DIMENSION AT MAXIMUM MATERIAL CONDITION.
DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE LEAD
FOOT. MINIMUM SPACE BETWEEN PROTRUSIONS AND ADJACENT LEAD
TO BE 0.14mm SEE DETAIL "B" AND SECTION B-B.
SECTION B-B TO BE DETERMINED AT 0.10 TO 0.25mm FROM THE LEAD TIP.
THIS PART IS COMPLIANT WITH JEDEC REGISTRATION MO-187 AA.
DATUMS A AND B TO BE DETERMINED DATUM PLANE H.
CASE 1640-01
ISSUE O
8-LEAD TSSOP PACKAGE
ICS843N001I Data Sheet 2.5 V/3.3 V ECL 1:2 DIFFERENTIAL FANOUT BUFFER
MC100ES6011 REVISION 6 OCTOBER 4, 2013 7 ©2013 Integrated Device Technology, Inc.
Revision History Sheet
Rev Table Page Description of Change Date
5 1 Product Discontinuance Notice – Last Time Buy Expires on (12/19/2013) 2/5/2013
6 1 PDN# N-12-29 - Added - Use replacement part 853S011 10/4/13
DISCLAIMER Integrated Device Technology, Inc. (IDT) and its subsidiaries reserve the right to modify the products and/or specifications described herein at any time and at IDT’s sole discretion. All information in this document,
including descriptions of product features and performance, is subject to change without notice. Pe rformance specifications and the operating parameter s of the described products are determined in the independent state and are not
guaranteed to perform the same w ay when installed in customer products. The information contained herein is provided without representation or warranty of any kind, whether express or implied, including, but not limited to, the
suitability of IDT’s products for any particular purpose, an implied warranty of merchantability, or non-infringement of the intellectual property rights of others. This document is presented only as a guide and does not convey any
license under intellectual property rights of IDT or any third parties.
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party owners.
Copyright 2013. All rights reserved.
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ICS843N001I Data Sheet 2.5 V/3.3 V ECL 1:2 DIFFERENTIAL FANOUT BUFFER
