R08DS0100EJ0300 Rev.3.00 Page 1 of 13
Jan 23, 2013
1. Anode
2. Cathode
3. Emitter
4. Collector
PIN CONNECTION
(Top View)
43
12
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Data Sheet
PS2861B-1
4-PIN SSOP PHOTOCOUPLER OPERATING
AMBIENT TEMPERATURE 110°C
DESCRIPTION
The PS2861B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon
phototransistor.
The package has a shield effect to cut off ambient light, and is mounted in a Shrink SOP (Small Outline Package) for
high density applications.
Due to the high isolation voltage between the input and output, the PS2861B-1 is suitable for interface and signal
transfer circuits that require surface or high-density mounting.
FEATURES
•Operating ambient temperature: 110°C
•Isolation distance (0.4 mm MIN.)
•High isolation voltage (BV = 3 750 Vr.m.s.)
•Shrink SOP (Small Outline Package) type
•High-speed switching (tr = 4
μ
s TYP., tf = 5
μ
s TYP.)
•Embossed tape product: PS2861B-1-F3: 3 500 pcs/reel
•Pb-Free product
•Safety standards
•UL approved: No. E72422
•CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
•BSI approved (BS EN 60065, BS EN 60950)
•SEMKO, NEMKO, DEMKO, FIMKO approved (EN 60065, EN60950)
•CQC approved (GB8898, GB4943)
•DIN EN 60747-5-5 (VDE 0884-5) approved (Option)
APPLICATIONS
•Power supply
•Programmable logic controllers
R08DS0100EJ0300
Rev.3.00
Jan 23, 2013
<R>
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PS2861B-1
R08DS0100EJ0300 Rev.3.00 Page 2 of 13
Jan 23, 2013
PACKAGE DIMENSIONS (UNIT: mm)
M
0.12
0.4±0.1
1.27
2.7±0.3
4.4
7.0±0.3
0.5±0.3
0.15+0.10
–0.05
2.0
±0.1
0.1±0.1
12
43
PHOTOCOUPLER CONSTRUCTION
Parameter Unit (MIN.)
Air Distance 5.0 mm
Creepage Distance 5.0 mm
Isolation Distance 0.4 mm
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PS2861B-1
R08DS0100EJ0300 Rev.3.00 Page 3 of 13
Jan 23, 2013
MARKING EXAMPLE
Made in Taiwan
Made in Japan
Made in Taiwan
Halogen free
Made in Japan
Halogen free
" " (Vertical bar)
:Made in Taiwan & Halogen free
" " (Horizontal bar)
:Made in Japan & Halogen free
" " (Square)
:Made in Japan
Company initial
Week Assembled
Year Assembled (Last 1 digit)
Last 2 numbers of type
No. : 1B
Assembly Lot
301
<R>
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PS2861B-1
R08DS0100EJ0300 Rev.3.00 Page 4 of 13
Jan 23, 2013
ORDERING INFORMATION
Part Number Order Number Solder Plating
Specification
Packing Style Safety Standard
Approval
Application
Part Number*1
PS2861B-1-F3 PS2861B-1Y-F3-A Embossed Tape
3 500 pcs/reel
Standard products
(UL, CSA, BSI,
SEMKO, NEMKO,
DEMKO, FIMKO,
CQC approved)
PS2861B-1-V-F3 PS2861B-1Y-V-F3-A
Pb-Free and
Halogen Free
Embossed Tape
3 500 pcs/reel
DIN EN 60747-5-5
(VDE 0884-5)
approved (Option)
PS2861B-1
Note: *1. For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Diode Forward Current (DC) IF50 mA
Reverse Voltage VR6 V
Power Dissipation Derating
Δ
PD/°C 0.6 mW/°C
Power Dissipation PD60 mW
Peak Forward Current*1 IFP1 2.5 A
Peak Forward Current*2 IFP2 1.0
Transistor Collector to Emitter Voltage VCEO 70 V
Emitter to Collector Voltage VECO 5 V
Collector Current IC50 mA
Power Dissipation Derating
Δ
PC/°C 1.2 mW/°C
Power Dissipation PC120 mW
Isolation Voltage*3 BV 3 750 Vr.m.s.
Operating Ambient Temperature TA –55 to +110 °C
Storage Temperature Tstg –55 to +150 °C
Notes: *1. PW = 10
μ
s, Duty Cycle = 1%
*2. PW = 100
μ
s, Duty Cycle = 1%
*3. AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-4 shorted together.
<R>
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PS2861B-1
R08DS0100EJ0300 Rev.3.00 Page 5 of 13
Jan 23, 2013
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VF I
F = 5 mA 1.1 1.4 V
Reverse Current IR V
R = 5 V 5
μ
A
Terminal
Capacitance Ct V = 0 V, f = 1 MHz 15 pF
Transistor Collector to Emitter
Dark Current ICEO I
F = 0 mA, VCE = 24 V 100 nA
Coupled Current Transfer
Ratio (IC/IF)*1 CTR IF = 5 mA, VCE = 5 V 50 150 300 %
I
F = 1 mA, VCE = 5 V 10 50
Collector Saturation
Voltage VCE (sat) I
F = 10 mA, IC = 2 mA 0.3 V
Isolation Resistance RI-O V
I-O = 1 kVDC 1011 Ω
Isolation
Capacitance CI-O V = 0 V, f = 1 MHz 0.4 pF
Rise Time*2 t
r V
CC = 5 V, IC = 2 mA, RL = 100 Ω4
μ
s
Fall Time*2 t
f5
Turn-on Time*2 t
on 5
Turn-off Time*2 t
off 5
Notes: *1. CTR rank
CTR rank CTR (%) Conditions
L 100 to 300 IF = 5 mA, VCE = 5 V
20 and larger IF = 1 mA, VCE = 5 V
M 50 to 150 IF = 5 mA, VCE = 5 V
10 and larger IF = 1 mA, VCE = 5 V
N 50 to 300 IF = 5 mA, VCE = 5 V
10 and larger IF = 1 mA, VCE = 5 V
*2. Test Circuit for Switching Time
Input
Output
90%
10%
tr
td
tf
ts
ton toff
VCC
V
OUT
IF
RL = 100 Ω
50 Ω
Pulse Input
In monitor
PW = 100 s
Duty cycle = 1/10
μ
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<R>
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PS2861B-1
R08DS0100EJ0300 Rev.3.00 Page 6 of 13
Jan 23, 2013
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
100
80
60
40
20
0 25 50 75 100 150125
30
25
20
15
10
5
0 123 45678910
0.6 mW/°C
I
F
= 10 mA
5 mA
3 mA 2 mA
1 mA
Ambient Temperature T
A
(°C)
Diode Power Dissipation P
D
(mW)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Ambient Temperature T
A
(°C)
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Ambient Temperature T
A
(°C)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current I
CEO
(nA)
Collector Saturation Voltage V
CE (sat)
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
0 20 40 60 12010080
110
200
180
160
140
120
100
80
60
40
20
0 25 50 75 100 150125
1.2 mW/°C
110
10 000
0.1
100
1 000
10
1
V
CE
= 24 V
100
1.51.41.31.21.11.00.90.80.7
50
10
5
1
0.5
0.1
0°C
–25°C
–55°C
+60°C
+25°C
T
A
= +100°C
0.05
Forward Voltage V
F
(V)
Forward Current I
F
(mA)
FORWARD CURRENT vs.
FORWARD VOLTAGE
0.1
1.0
10.0
100.0
2 mA
3 mA
5 mA
1 mA
I
F
= 10 mA
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Remark The graphs indicate nominal characteristics.
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PS2861B-1
R08DS0100EJ0300 Rev.3.00 Page 7 of 13
Jan 23, 2013
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
–
40
–60 –
20 020 6040 12080 100
100
10
1
0.110 100 1 000 10 000 0.1 1 10 100
I
F
= 5 mA, V
CC
= 5 V,
CTR = 100%
R
L
= 1 kΩ
300 Ω
100 Ω
IF = 5 mA,
VCE = 5 V
5
0
–
5
–
10
–
15
–
20
–
250.1 1 10 100 1 000
Ambient Temperature T
A
(°C)
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
Normalized Current Transfer Ratio CTR
Normalized to 1.0
at T
A
= 25°C,
I
F
= 1 mA, V
CE
= 5 V
Load Resistance R
L
(Ω)
SWITCHING TIME vs.
LOAD RESISTANCE
Switching Time t ( s)
μ
Load Resistance R
L
(kΩ)
SWITCHING TIME vs.
LOAD RESISTANCE
Switching Time t ( s)
μ
Frequency f (kHz)
Normalized Gain G
V
FREQUENCY RESPONSE
Normalized to 1.0
at T
A
= 25°C,
I
F
= 5 mA, V
CE
= 5 V
300
250
200
150
100
50
0
V
CE
= 5 V,
n = 3
Forward Current I
F
(mA)
Current Transfer Ratio CTR (%)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
–
40
–60 –
20 020 6040 12080 100
Ambient Temperature T
A
(°C)
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
Normalized Current Transfer Ratio CTR
t
f
t
r
t
s
I
C
= 2 mA, V
CC
= 5 V,
CTR = 100%
t
d
0.1 1 10 100
0.1
1
10
100
1 000
CTR = 160%@T
A
= 25°C
CTR = 160%@T
A
= 25°C
ts
t
f
td
t
r
Sample A
B
C
100%@T
A
= 25°C
100%@T
A
= 25°C
Remark The graphs indicate nominal characteristics.
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PS2861B-1
R08DS0100EJ0300 Rev.3.00 Page 8 of 13
Jan 23, 2013
TAPING SPECIFICATIONS (UNIT: mm)
Outline and Dimensions (Reel)
Packing: 3 500 pcs/reel
2.0±0.5
R 1.0
13.0±0.2
φ
21.0±0.8
φ
Outline and Dimensions (Tape)
1.55±0.1
4.0±0.1
2.0±0.1
4.0±0.1
1.75±0.1
2.8 MAX.
7.55±0.1
0.3
7.5±0.1
16.0±0.3
2.85±0.1 2.3±0.1
1.5
+0.1
–0
φ
330±2.0
φ
100±1.0
φ
2.0±0.5
15.9 to 19.4
Outer edge of
flange
21.5±1.0
17.5±1.0
Tape Direction
PS2861B-1-F3
R1B
301
R1B
301
R1B
301
R1B
301
R1B
301
<R>
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PS2861B-1
R08DS0100EJ0300 Rev.3.00 Page 9 of 13
Jan 23, 2013
RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm)
1.45
0.8
1.27
6.25
Remark All dimensions in this figure must be evaluated before use.
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PS2861B-1
R08DS0100EJ0300 Rev.3.00 Page 10 of 13
Jan 23, 2013
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
•Peak
reflow temperature 260°C or below (package surface temperature)
• Time of peak reflow temperature 10 seconds or less
• Time of temperature higher than 220°C 60 seconds or less
• Time to preheat temperature from 120 to 180°C 120±30 s
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux
with a maximum chlorine content of 0.2 Wt% is
recommended.)
120±30 s
(preheating)
220°C
180°C
Package Surface Temperature T (°C)
Time (s)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
to 60 s
260°C MAX.
120°C
(2) Wave soldering
• Temperature 260°C or below (molten solder temperature)
• Time 10 seconds or less
• Preheating conditions 120°C or below (package surface temperature)
• Number of times One (Allowed to be dipped in solder including plastic mold portion.)
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Soldering by Soldering Iron
• Peak Temperature (lead part temperature) 350°C or below
• Time (each pin) 3 seconds or less
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead
(4) Cautions
• Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
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PS2861B-1
R08DS0100EJ0300 Rev.3.00 Page 11 of 13
Jan 23, 2013
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between collector-
emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum
ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ according to
product.
When using products other than at the specified forward current, the characteristics curves may differ from the
standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual
operating conditions and thoroughly take variations or the like into consideration before use
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
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PS2861B-1
R08DS0100EJ0300 Rev.3.00 Page 12 of 13
Jan 23, 2013
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
Parameter Symbol Spec. Unit
Climatic test class (IEC 60068-1/DIN EN 60068-1) 55/110/21
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and
random test)
Upr = 1.6 × UIORM, Pd < 5 pC
UIORM
Upr
710
1 136
Vpeak
Vpeak
Test voltage (partial discharge test, procedure b for all devices)
Upr = 1.875 × UIORM, Pd < 5 pC
Upr 1 331 Vpeak
Highest permissible overvoltage UTR 6 000 Vpeak
Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) 2
Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303
Part 11))
CTI 175
Material group (DIN EN 60664-1 VDE0110 Part 1) III a
Storage temperature range Tstg –55 to +150 °C
Operating temperature range TA –55 to +110 °C
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25°C
VIO = 500 V dc at TA MAX. at least 100°C
Ris MIN.
Ris MIN.
1012
1011
Ω
Ω
Safety maximum ratings (maximum permissible in case of fault, see
thermal derating curve)
Package temperature
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
VIO = 500 V dc at TA = Tsi
Tsi
Isi
Psi
Ris MIN.
175
400
700
109
°C
mA
mW
Ω
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<R>
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PS2861B-1
R08DS0100EJ0300 Rev.3.00 Page 13 of 13
Jan 23, 2013
Caution GaAs Products This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
•Do not burn, destroy, cut, crush, or chemically dissolve the product.
•Do not lick the product or in any way allow it to enter the mouth.
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All trademarks and registered trademarks are the property of their respective owners.
C - 1
Revision History PS2861B-1 Data Sheet
Description
Rev. Date Page Summary
1.00 Jan 28, 2009 − This data sheet was released as PN10742EJ01V0DS
3.00 Jan 23, 2013 Throughout Renesas format is applied to this data sheet.
p.1 The safety standards are revised.
p.3 The explanation in MARKING EXAMPLE is revised.
p.4
ORDERING INFORMATION is modified with the revision of the safety
standards.
p.5
Turn-on Time (ton) and Turn-off Time(toff) are added to the table in
ELECTRICAL CHARACTERISTICS.
p.8 The image in Tape Direction is revise.
p.10
The note about temperature condition of the recommended soldering
conditions is deleted.
p.12
The value of Upr is changed from the value, 1 065 and the factor, 1.5 of UIORM
is changed from 1 136 and 1.6, respectively.
NOTICE
1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and
application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California
Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits,
software, or information.
2. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does
not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
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