2N3583, 2N3584, 2N3585
Silicon NPN Transistors
High Voltage, Medium Power Switch
TO66 Type Package
Description:
The 2N3583, 2N3584, and 2N3585 are silicon transistors in a TO66 type package designed for high−
speed switching and linear amplifier applications for high−voltage operational amplifiers, switching
regulators, converters, inverters, deflection stages, and high fidelity amplifiers.
Features:
DTO66 Type Package
DContinuous Collector Current: IC = 2A
DPower Dissipation: PD = 35W @ TC = +25C
DCollector−Emitter Saturation Voltage: VCE(sat) = 0.75V (Max) @ IC = 1A, IB = 125mA
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO
2N3583 175V....................................................................
2N3584 250V....................................................................
2N3585 300V....................................................................
Collector−Base Voltage, VCB
2N3583 250V....................................................................
2N3584 375V....................................................................
2N3585 500V....................................................................
Emitter−Base Voltage, VEB 6V...........................................................
Collector Current, IC
Continuous
2N3583 1A...................................................................
2N3584, 2N3585 2A...........................................................
Peak 5A........................................................................
Base Current, IB 1A....................................................................
Total Power Dissipation (TC = +25C), PD 35W............................................
Derate above 25C 0.2W/C.......................................................
Operating Junction Temperature Range, TJ−65 to +200C..................................
Storage Junction Temperature Range, Tstg −65 to +200C..................................
Thermal Resistance, Junction to Case, RJC 5C/W.........................................