2SB1407(L)-(S) - Hitachi Semiconductor

2SB1407(L)/(S)

Silicon PNP Epitaxial

ADE-208-876 (Z)

1st. Edition

Sep. 2000

Application

Low frequency power amplifier complementary Pair with 2SD2121(L)/(S)

Outline

123

11. Base

2. Collector

3. Emitter

4. Collector

DPAK

S Type

L Type

2SB1407(L)/(S)

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage VCBO –35 V

Collector to emitter voltage VCEO –35 V

Emitter to base voltage VEBO –5 V

Collector current IC–2.5 A

Collector peak current IC(peak) –3 A

Collector power dissipation PC*118 W

Junction temperature Tj 150 °C

Storage temperature Tstg –55 to +150 °C

Note: 1. Value at TC = 25°C.

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

voltage V(BR)CBO –35 — — V IC = –1 mA, IE = 0

Collector to emitter breakdown

voltage V(BR)CEO –35 — — V IC = –10 mA, RBE = ∞

Emitter to base breakdown

voltage V(BR)EBO –5 — — V IE = –1 mA, IC = 0

Collector cutoff current ICBO — — –20 µAV

CB = –35 V, IE = 0

DC current transfer ratio hFE1*160 — 320 VCE = –2 V, IC = –0.5 A*2

hFE2 20 — — VCE = –2 V, IC = –1.5 A*2

Base to emitter voltage VBE — — –1.5 V VCE = –2 V, IC = –1.5 A*2

Collector to emitter saturation

voltage VCE(sat) — — –1.0 V IC = –2 A, IB = –0.2 A*2

Notes: 1. The 2SB1407(L)/(S) is grouped by hFE1 as follows.

BCD

60 to 120 100 to 200 160 to 320

2. Pulse test.

2SB1407(L)/(S)

0Case Temperature TC (°C)

Collector power dissipation Pc (W)

Maximum Collector Dissipation Curve

50 100 150

–0.1

–0.3

–1.0

–10

–3

Collector to emitter Voltage VCE (V)

Collector Current IC (A)

–1 –3 –10 –30 –100

Area of Safe Operation

IC (max)

iC (peak) PW = 10 ms

Ta = 25°C

1 Shot Pulse

DC Operation

= 25°C)

1 ms

Collector to emitter Voltage VCE (V)

Collector Current IC (A)

Typical Output Characteristics

–0.4

–0.8

–1.2

–1.6

–2.0

–1 –2 –3 –4 –5

IB = 0 Ta = 25°C

–2 mA

–4

–10

–12

–14

–16

–6

–8

100

300

1,000

Collector current IC (A)

DC current transfer ratio hFE

–0.03 –0.1 –0.3 –1.0 –3.0

DC Current Transfer Ratio vs.

Collector Current

VCE = –2 V

Ta = 25°C

2SB1407(L)/(S)

–0.01

–0.03

Collector current IC (A)

–0.03 –0.1 –0.3 –1.0 –3.0

Collector to emitter saturation voltage

VCE (sat) (V)

Saturation Voltage vs. Collector Current

–0.1

–0.3

–1.0

lC = 10 lB

Ta = 25°C0

–0.4

–0.8

–1.2

–1.6

–2.0

Base to emitter voltage VBE (V)

Collector current IC (A)

–0.5 –0.4 –0.8 –1.2 –1.6 –2.0

Typical Transfer Characteristics

VCE = –2 V

Ta = 25°C

2SB1407(L)/(S)

Package Dimensions

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

DPAK (L)-(1)

—

Conforms

0.42 g

Unit: mm

6.5 ± 0.5 2.3 ± 0.2

0.55 ± 0.1

1.2 ± 0.3

0.55 ± 0.1

5.5 ± 0.5 1.7 ± 0.5

16.2 ± 0.5

3.1 ± 0.5

5.4 ± 0.5

1.15 ± 0.1

2.29 ± 0.5 2.29 ± 0.5

0.8 ± 0.1

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

DPAK (S)-(1)

—

Conforms

0.28 g

Unit: mm

6.5 ± 0.5

5.4 ± 0.5 2.3 ± 0.2

0.55 ± 0.1

0 – 0.25

0.55 ± 0.1

1.7 ± 0.5

5.5 ± 0.5

2.5 ± 0.5

1.15 ± 0.1

0.8 ± 0.1

2.29 ± 0.5

1.2 Max

(4.9)

(5.3)

2SB1407(L)/(S)

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