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BAR81...
Silicon RF Switching Diode
• Designed for use in shunt configuration in
high performance RF switches
• High shunt signal isolation
• Low shunt insertion loss
• Optimized for short - open transformation
using λ/4 lines
• Pb-free (RoHS compliant) package
BAR81W
" !
Type Package Configuration LS(nH) Marking
BAR81W SOT343 single shunt-diode 0.15* BBs
* series inductance chip to ground
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage VR30 V
Forward current IF100 mA
Total power dissipation
Ts ≤ 138°C
Ptot 100 mW
Junction temperature Tj150 °C
Operating temperature range Top -55 ... 125
Storage temperature Tst
g
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 120 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
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Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 20 V
IR- - 20 nA
Forward voltage
IF = 100 mA
VF- 0.93 1 V
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 3 V, f = 1 MHz
CT
-
-
0.6
0.57
1
0.9
pF
Forward resistance
IF = 5 mA, f = 100 MHz
rf- 0.7 1 Ω
Charge carrier life time
IF = 10 mA, IR = 6 mA, measured at IR = 3 mA,
RL = 100 Ω
τ rr - 80 - ns
I-region width WI- 3.5 - µm
Shunt Insertion loss1)
IF = 10 mA, f = 1.89 GHz
IL- 30 - dB
Shunt isolation1)
VR = 3 V, f = 1.89 GHz
ISO - 0.7 -
Configuration of the shunt-diode
- A perfect ground is essential for optimum isolation
- The anode pins should be used as passage for RF
1For more information please refer to Application Note 049.
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Diode capacitance CT = ƒ (VR)
f = Parameter
0 2 4 6 8 10 12 14 16 V20
VR
0.2
0.3
0.4
0.5
0.6
0.7
0.8
pF
1
CT
1 Mhz ... 1.8 GHz
Reverse parallel resistance RP = ƒ(VR)
f = Parameter
0 2 4 6 8 10 12 14 16 V20
VR
-1
10
0
10
1
10
2
10
3
10
4
10
KOhm
Rp
100 MHz
1 GHz
1.8 GHz
Forward resistance rf = ƒ (IF)
f = 100MHz
10 -2 10 -1 10 0 10 1 10 2
mA
IF
-1
10
0
10
1
10
Ohm
rf
Forward current IF = ƒ (VF)
TA = Parameter
0 0.2 0.4 0.6 0.8 V1.2
VF
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
A
IF
-40 °C
25 °C
85 °C
125 °C
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Forward current IF = ƒ (TS)
BAR81W
0 15 30 45 60 75 90 105 120 °C 150
TS
0
10
20
30
40
50
60
70
80
90
100
mA
120
IF
Permissible Puls Load RthJS = ƒ (tp)
BAR81W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tP
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
IFmax/ IFDC = ƒ (tp) BAR81W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tP
0
10
1
10
2
10
-
IFmax/IFDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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Package SOT343
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
2005, June
Date code (YM)
BGA420
Type code
0.2
4
2.15
8
2.3
1.1
Pin 1
0.6
0.8
1.6
1.15
0.9
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15
+0.1
-0.05
0.3
+0.1
2
±0.2
±0.1
0.9
12
34
A
+0.1
0.6
A
M
0.2
1.3
-0.05
-0.05
0.15
0.1
M
4x
0.1
0.1 MIN.
Pin 1
Manufacturer
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Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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For information on the types in question, please contact the nearest Infineon
Technologies Office.
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only with the express written approval of Infineon Technologies, if a failure of such
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Life support devices or systems are intended to be implanted in the human body or
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