SUPERTEX INC } I O1 pe arzaecs OOGLEbY 1 i CG Supertex inc. | Ordering Information N-Channel Enhancement-Mode Vertical DMOS Power FETs BV oc / Roscon) lion Order Number / Package BV ngs (max) (min) TO-39 TO-92 160V 402 250mA VN1316N2 VN1316N3 200V 402 250mA VN1320N2 VN1320N3 Features Advanced DMOS Technology (1 Freedom from secondary breakdown These enhancement-mode (normally-off) power transistors util- . . ize a vertical DMOS structure and Supertexs well-proven silicon- C1 Low power drive requirement gate manufacturing process. This combination produces c avices O Ease of paralleling with the power handling capabilities of bipolar transistors arid with Hat the high input impedance and negative temperature coefficient C1 Low Cigg and fast switching speeds inherent in MOS devices. Characteristic of all MOS structures, 0 Excellent thermal stability these devices are free from thermal runaway and thermally- oO Integral Source-Drain diode induced secondary breakdown. tpt ' ' : Superiex Vertical DMOS Power FETs are ideally suited to a wide C1 High input impedance and high gain , range of switching and amplifying applications where high break- O Complementary N- and P-Channel devices down voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Package Options (Note 4) Motor control H Converters OF Amplifiers [1 Switches 1 Power supply circuits O Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, et c.) Absolute Maximum Ratings Drain-to-Source Voltage BVoss Drain-to-Gate Voltage BV ngs Gate-to-Source Voltage +20V Operating and Storage Temperature -55C to +150C Soldering Temperature* 300C Note t; See Package Oulline section for discrete pinouts. TO-39 TO-92 Distance of 1.6 mm from case for 10 seconds. 8-95 STS to . d ll iSUPERTEX INC 01 pe Parzszess cones 3 ge VNi3C Thermal Characteristics 7-35-25 Package |, (continuous)* I, (pulsed)* Power Dissipation oy 6. loa loam : . @T, = 25C C/W Cw TO-38 150mA 450mA 3.0W 125 41.5 150mA 450mA TO-92 100mA 400mA 0.8W 155 100mA 400mA Ip (continuous) is fimited by max rated T. Electrical Characteristics (@ 25C unless otherwise specified) (Notes 1 and 2) Symbol Parameter Min Typ Max Unit Conditions BYVDSS Drain-to-Source VN1320 200 Breakdown Voltage (VN1316 160 Vv Ip = 1mA, VGS = 0 VGSith) Gate Threshold Voltage 1.6 3.5 Vv VGS=VDS, ID =1mA AVGS(th} Change in VGS({th) with Temperature -2.0 j|-4.0 mv/C | VGS=VDs, ID = 1mA IGSS Gate Body Leakage 100 nA VGS =+20V, VDS =0 {pss Zero Gate Voltage Drain Current 10 VGS = 0, VDS = Max Rating 500 uA VGS=0, VDS= 0.8 Max Rating TA=125C ID(ON) ON-State Drain Current 50 160 mA | VGS= 5V, VDS = 25V 250 300 mA | VGS= 10V, VDS = 25V RDS(ON) Static Drain-to-Source g 30 40 VGS=5V, ID =50mA ON-State Resistance 25 40 2 VGs = 10V, Ip = 100mA ARDS(ON) | Change in RDS(ON) with Temperature 0.8 2.0 %/C ID = 100mA, VGS = 10V Ges Forward Transconductance 50 70 my VDS = 25V, ID = 100mA Ciss Input Capacitance 25 35 Cass Common Source Output Capacitance 10 16 pF | VGs=0, VDS = 25V Crss Reverse Transfer Capacitance 3 5 f= 1 MHz td (ON) Turn-ON Delay Time 1.5 5 tr Rise Time 2 5 ns VDD = 25V td(OFF) Turn-OFF Delay Time 15 5 ID =0.2A, Rg = 509 tf Fall Time 2 5 VSD Diode Forward Voltage Drop 1.2 2.0 Vv ISD = 1A, VGS =0 tr Reverse Recovery Time 300 ns Isp = 1A, VGS =0 Note 1: All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 3001s pulse, 2% duty cycle.) Note 2: All A.C, parameters sample tested. Switching Waveforms and Test Circuit / % 90% pur = - 4 \ ~~ HON) | OFF] T Poise 7 ~ ~ | GENERATOR SCOPE td(ON} tr ta(OFF) tf | 0.U.T. > > OUTPUT ooo 0 ion | { | N a wee eee ee ee rere npr tas Gwe R RRs SO mee eSSUPERTEX INC O1 pe avzsess QOOLbELLE 5 Tt . VN13G Typical Performance Curves 7-35-25 . Output Characteristics Saturation Characteristics Vas = Vas =1 av g g f a oa a : = = i x i oO a : Qo 50 100 0 5 10 | Vps (VOLTS) Vps (VOLTS) Transconductance Vs. Drain Current Power Dissipation Vs. Case Temperature 100 Vps = 25V T,= 55C -080 - S| ee) B 3 Ec = ii < 8 040 = e e o .020 0 0 01 0.2 0.3 0.4 0.5 0 25 50 75 100 425 150 ip (AMPERES) To (Cc) Maximum Rated Safe Operating Area Thermal Response Characteristics t 1 _ | a Ww N a < = 5 % 0.1 3 oi Q a 2 2 5 < G | 2 oot i a , s . g Te = 25 Cc BY BVpss E b= aw 0.004 i y0 100 4000 1 10 100 1000 10,000 Vps (VOLTS) tp (SECONDS) 8-97SUPERTEX INC LINC 01 peffar73e95 ooo. 27 9 VN13C 7-35-25 BVDSS Variation with Temperature ON- Resistance Vs .Drain Current 250 1.15 . iW 200 a Ww - N g a Z = 150 3 1.05 3 g 3 | a 10 g 100 i 8 tf B 0.95 50 0.90 0 60 0 50 100 150 0 0.1 0.2 0.3 0.4 0.5 Ty PC) Ips {AMPERES} Transfer Characteristics Vith) and RDS Variation with Temperature 0.5 Ty = 55C | y 0.4 6 "oe a N - 4 3 w a s tc 03 < fc 2 3 a i 2 Ss 9 2 < 0.2 2 zg - = a 8 e o 0.1 > 0 0.6 0 2 4 6 8 10 50 0 50 100 160 Ves (VOLTS) Ty Pe) Capacitance Vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 40 T 10 f= 1 MHz Vps = 10V 8 30 40V B ciss _ 6 : 3 z 20 g BR 4 & g 0 |_coss 2 CRSS 0 0 90 10 20 30 40 0 0.1 0.2 0.3 0.4 0.5 Vps (VOLTS) aQG {NANOCOULOMBS) 8-98